pn junction diode structure
Abstract: PIN diode
Text: Section 2 PIN Diode Features A PIN diode has an intrinsic semiconductor layer I layer in the middle of the PN junction, which makes it a diode with a P-I-N junction. It is a high frequency variable resistor that can change its high frequency series resistance (rf) by controlling the forward current applied to the junction.
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Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS70TW
WBFBP-06C
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transistor k43
Abstract: FBAS40TW marking k43 diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS40TW
WBFBP-06C
transistor k43
FBAS40TW
marking k43 diode
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K73 Package
Abstract: FBAS70TW
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS70TW
WBFBP-06C
K73 Package
FBAS70TW
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40TW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS40TW
WBFBP-06C
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pn junction diode application
Abstract: power Schottky bridge FBAS70DW-04 marking K74
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS70DW-04
WBFBP-06C
pn junction diode application
power Schottky bridge
FBAS70DW-04
marking K74
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS70DW-04
WBFBP-06C
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS40DW-04
WBFBP-06C
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS40BRW
WBFBP-06C
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k44 transistor
Abstract: transistor k44 FBAS40DW-04
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-04 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode FEATURES
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WBFBP-06C
FBAS40DW-04
WBFBP-06C
k44 transistor
transistor k44
FBAS40DW-04
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BAS70BRW
Abstract: FBAS70BRW
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS70BRW
WBFBP-06C
BAS70BRW
BAS70BRW
FBAS70BRW
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS70BRW
WBFBP-06C
BAS70BRW
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marking k47
Abstract: SCHOTTKY BARRIER BRIDGE RECTIFIERS FBAS40BRW
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40BRW SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS40BRW
WBFBP-06C
marking k47
SCHOTTKY BARRIER BRIDGE RECTIFIERS
FBAS40BRW
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-06 WBFBP-06C SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS70DW-06
WBFBP-06C
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS70DW-05
WBFBP-06C
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FBAS70DW-05
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS70DW-05
WBFBP-06C
FBAS70DW-05
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Marking k45
Abstract: FBAS40DW-05 k45 diode diode k45
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS40DW-05
WBFBP-06C
Marking k45
FBAS40DW-05
k45 diode
diode k45
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS40DW-05 SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS WBFBP-06C 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS40DW-05
WBFBP-06C
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FBAS70DW-06
Abstract: pn junction diode application
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FBAS70DW-06 WBFBP-06C SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS 2x2×0.5 unit: mm DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES
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WBFBP-06C
FBAS70DW-06
WBFBP-06C
FBAS70DW-06
pn junction diode application
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BAT46 sod80
Abstract: BAT46 C 704 diode MINI-MELF DIODE green CATHODE DIODE WITH SOD CASE
Text: L L 46 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high break-down voltage. This device is protected by a PN junction guardring against excessive voltage, such as electrostatic discharges.
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DO-35
BAT46.
OD-80)
100uA
300us,
250mA
BAT46 sod80
BAT46
C 704 diode
MINI-MELF DIODE green CATHODE
DIODE WITH SOD CASE
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Untitled
Abstract: No abstract text available
Text: BAT41 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT41
DO-35
100uA
100OC
200mA
300uS
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Untitled
Abstract: No abstract text available
Text: Zowie Technology Corporation Schottky Barrier Diode 30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE Lead free product Halogen-free type * Extremely Fast Switching Speed * Low Forward Voltage * PN Junction Guard Ring for Transient and ESD Protection.
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BAT54WGH
OT-323
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Untitled
Abstract: No abstract text available
Text: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
BAS86.
DO-35
D-74025
03-Feb-04
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Untitled
Abstract: No abstract text available
Text: BAT86 VISHAY Vishay Semiconductors Schottky Diode Features • For general purpose applications. • This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAT86
BAS86.
DO-35
08-Apr-05
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