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    DIODE PH 12 Search Results

    DIODE PH 12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    DIODE PH 12 Price and Stock

    Phoenix Contact UNO-DIODE/5-24DC/2X10/1X20

    Redundancy module - 5 V - 24 V DC - 2 x 10 A - 1 x 20 A.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com UNO-DIODE/5-24DC/2X10/1X20 36
    • 1 $76.35
    • 10 $67.63
    • 100 $61.24
    • 1000 $59.17
    • 10000 $59.17
    Buy Now

    Phoenix Contact TRIO2-DIODE/12-24DC/2X20/1

    Redundancy module, 12 V - 24 V DC, 2 x 20 A, 1 x 40 A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TRIO2-DIODE/12-24DC/2X20/1 30
    • 1 $130.85
    • 10 $109.63
    • 100 $102.22
    • 1000 $102.22
    • 10000 $102.22
    Buy Now

    Phoenix Contact QUINT-DIODE/12-24DC/2X20/1

    Diode Redundancy Module - QUINT-DIODE/12-24DC/2X20/1X40
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com QUINT-DIODE/12-24DC/2X20/1 22
    • 1 $178.86
    • 10 $166.93
    • 100 $162.6
    • 1000 $162.6
    • 10000 $162.6
    Buy Now

    Phoenix Contact TRIO-DIODE/12-24DC/2X10/1X

    Redundancy Module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com TRIO-DIODE/12-24DC/2X10/1X 13
    • 1 $123.8
    • 10 $103.73
    • 100 $98.19
    • 1000 $96.72
    • 10000 $96.72
    Buy Now

    Phoenix Contact STEP-DIODE/5-24DC/2X5/1X10

    Redundancy module - 5 ... 24 V DC - 2x 5 A - 1x 10 A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com STEP-DIODE/5-24DC/2X5/1X10 10
    • 1 $71.29
    • 10 $63.15
    • 100 $57.18
    • 1000 $55.25
    • 10000 $55.25
    Buy Now

    DIODE PH 12 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PDM5001

    Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
    Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH


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    C3557 PH1503 PH150 PDM5001 PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16 PDF

    marking code PH 200

    Abstract: BAV70WS
    Text: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current


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    BAV70WS OD-323 OD-323 marking code PH 200 BAV70WS PDF

    b1443

    Abstract: 455 KHz 34943 UM9552 UM9552S 8 PIN pin diode attenuator TCVF 455 khz if variable
    Text: 580 Pleasant St. Watertown, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 UM9552 Features • • • • PIN DIODE ATTENUATOR Low Frequency Attenuator HF/LF Band Operation Long Lifetime (70 µ s typ.) Very Low Distortion (IP3 @ 455 KHz = < 60 dBm) Description


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    UM9552 UM9552 Intermodulat52 MSCO867B b1443 455 KHz 34943 UM9552S 8 PIN pin diode attenuator TCVF 455 khz if variable PDF

    ID100

    Abstract: MSAFX76N07A
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX76N07A Features • • • • • • • 70 Volts 76 Amps 12 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


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    MSAFX76N07A ID100 MSAFX76N07A PDF

    34036

    Abstract: ph c13 diode HUM2010 HUM2015 HUM2020 UM9552 diode mri power
    Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 HUM2010 HUM2015 HUM2020 Features • • • • • • PIN DIODE HIGH POWER STUD High Power Stud Mount Package High Zero Bias Impedance Very Low Inductance and Capacitance No Internal Lead Straps


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    HUM2010 HUM2015 HUM2020 perfUM9552 HUM2010, 34036 ph c13 diode HUM2010 HUM2015 HUM2020 UM9552 diode mri power PDF

    Untitled

    Abstract: No abstract text available
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX76N07A Features • • • • • • • 70 Volts 76 Amps 12 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


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    MSAFX76N07A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1SS301CCW SILICON EPITAXIAL PLANAR DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: PH Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum (Peak) Reverse Voltage VRM 85 V Reverse Voltage VR 80 V Average Forward Current


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    1SS301CCW PDF

    Untitled

    Abstract: No abstract text available
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A Features • • • • • • • 500 Volts 12 Amps 400 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure


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    MSAER12N50A MSAFR12N50A Drain300 PDF

    ID100

    Abstract: MSAER12N50A MSAFR12N50A DT4812
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A Features • • • • • • • 500 Volts 12 Amps 400 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure


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    MSAER12N50A MSAFR12N50A ID100 MSAER12N50A MSAFR12N50A DT4812 PDF

    ID100

    Abstract: MSAFX10N90A
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features 900 Volts 10 Amps 1.1 Ω • • • • • Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


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    MSAFX10N90A ID100 MSAFX10N90A PDF

    MSC0266

    Abstract: ID100 MSAER12N50A MSAFR12N50A uA555
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A Features • • • • • • • 500 Volts 12 Amps 400 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure


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    MSAER12N50A MSAFR12N50A MSC0266 ID100 MSAER12N50A MSAFR12N50A uA555 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features • • • • • • • 900 Volts 10 Amps 1.1 Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


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    MSAFX10N90A PDF

    EBF83

    Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
    Text: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs


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    EBF83 7R05998 7R05S99 EBF83 EN50011 Scans-0017839 CD2A battery operated cdi 2235S PDF

    Untitled

    Abstract: No abstract text available
    Text: mamor ME701202 ME701602 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Tht&G-PhäSG Diode Bridge Modules 20 Amperes/1200-1600 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three phase bridge applica­


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    ME701202 ME701602 Amperes/1200-1600 ME701202, 677att 72T4bBl 000AS4fl PDF

    BAS86

    Abstract: No abstract text available
    Text: •I bbS3S3I, GOSMSlfl 4b3 H A P X N AMER PH ILIPS/DISCRETE BAS86 b7E T> SCHOTTKY BARRIER DIODE Schottky Barrier diode with an integrated protection ring against extremely high static discharges. This diode, in a SOD 8 OC envelope, is intended for applications where a very low forward voltage is


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    BAS86 10fiA 100i2; 002H320 BAS86 PDF

    BUK637-500B

    Abstract: No abstract text available
    Text: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode


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    BUK637-500B BUK637-500B PDF

    diode DB 3 C

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm O PTICA L FIB ER COM M UN ICATION S InG aA sP PH A SE-SH IFTED D FB-D C-PBH LA SER DIODE M ODULE DESCRIPTION NDL5653P ¡s a 1550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola­


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    NDL5653P L5653P diode DB 3 C PDF

    BAT85

    Abstract: BAT85 sot PHILIPS DIODE philips Schottky diode MARKING 12p
    Text: SbE D 711DÛ2b □ 0 M G 2 4 ti DTÖ • PH I N Product specification Philips Semiconductors T-i I -or BAT85 Schottky barrier diode P H I LI P S international DESCRIPTION SbE D QUICK REFERENCE DATA A Schottky barrier diode with an integrated protection ring against


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    DO-34) BAT85 711002b BAT85 sot PHILIPS DIODE philips Schottky diode MARKING 12p PDF

    thermistor 054

    Abstract: No abstract text available
    Text: N EC b2E T> • ELECTRONI CS INC b42752S DQ3fiG5b EDM H N E C E DATA SHEET N EC LASER DIODE MODULE NDL5853P, NDL5853PA ELECTRON DEVICE 1 550 nm O PTICAL FIBER COMMUNICATIONS InGaAsP PH A SE-SH IFTED DFB-DC-PBH LA SER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTIO N


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    b42752S NDL5853P, NDL5853PA NDL5853P NDL5853PA b427525 NPLS853P, WPL58S3PÀ thermistor 054 PDF

    Untitled

    Abstract: No abstract text available
    Text: Microsemi h Watertown, MA 580 Pleasant St. W atertow n, MA 02472 PH: 617 926-0404 FAX: (617) 924-1235 m Progress P ow ered b y Technology Features • • • • PIN DIODE ATTENUATOR Low Frequency Attenuator HF/LF Band Operation Long Lifetime (70 us typ.)


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    UM9552 UM9552 MSC0867B PDF

    OP266W

    Abstract: OP506W
    Text: 0.OPIEK Product Bulletin OP266W June 1996 GaAlAs Plastic Infrared Emitting Diode Type OP266W -Il* * WBBBBSm. iiipllBI8 8 M I pH • FOR IDENTIFICATION PURPOSES. CATHODE LEAD IS .060 (1.52 NOM SHORTER THAN ANODE LEAD. DIMENSIONS ARE IN INCHES (MILLIMETERS)


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    OP266W OP266W OP506W OP506W PDF

    SUS CIRCUIT breakover device

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL SbE D 711DÖ 5b D D 41D74 3?T • ph : BR216 T -II-2 3 DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the T0-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a


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    41D74 BR216 BR216 T0-220AB T-ll-23 SUS CIRCUIT breakover device PDF

    Untitled

    Abstract: No abstract text available
    Text: Microsemi m m m Santa Ana, CA M 2830 S. Fairview St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features 500 Volts Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability


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    MSAFX24N50A PDF

    Untitled

    Abstract: No abstract text available
    Text: Micnosemi H m m Santa Ana, CA Progress Powered by Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode


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    MSAFX11P50A MSAFX24N50A MSC0308A PDF