B4045
Abstract: MBR4045PT MBR4045PTG
Text: MBR4045PT SWITCHMODE Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Package is Available*
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MBR4045PT
MBR4045PT/D
B4045
MBR4045PT
MBR4045PTG
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Untitled
Abstract: No abstract text available
Text: MBR4045PT SWITCHMODE Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg Pb−Free Package is Available*
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MBR4045PT
MBR4045PT/D
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MBR4045PT
Abstract: B4045 800TC Diode MBR4045PT
Text: MBR4045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR4045PT
r14525
MBR4045PT/D
MBR4045PT
B4045
800TC
Diode MBR4045PT
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B4045
Abstract: No abstract text available
Text: MBR4045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR4045PT
B4045
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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MBR4035PT
Abstract: MBR4045PT
Text: MBR4035PT SERIES SCHOTTKY BARRIER RECTIFIER DIODE TO-247AD TO- 3P PRV : 35~45 Volts Io : 40 Amperes 0.645 (16.4) 0.245(6.2) 0.225(5.7) 0.625 (15.9) FEATURES : * * * * 0.078 REF (1.98) 0.170(4.3) High current capability Low power loss, high efficiency High surge capacity
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MBR4035PT
O-247AD
O-247AD
MBR4045PT
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR340
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
PK MUR 460
pk mur460
PK MUR460 1110
gi756 diode
carrier 30bq015
USD1120
0525 Transient Voltage Suppressors
diode A14A surface
SS14 SOD123
MBRD360
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045WT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
equivalent components of diode 1N5399
diode ses5001
6A10 BL diode
equivalent for fr302 diode
equivalent components of diode her104
fe8b diode
FE8D
gi756 diode
A14F diode
MUR420 diode
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transistor 2N5952
Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also
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Untitled
Abstract: No abstract text available
Text: MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop
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MBR4035PT,
MBR4045PT,
MBR4050PT,
MBR4060PT
22-B106
O-247AD
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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DIODE 638 MOTOROLA
Abstract: MBR4045PT B4045 ANSI 45 rectifier rectifier diode 20 amp 800 volt 340D-02
Text: MOTOROLA Order this document by MBR4045PT/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR4045PT The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the
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MBR4045PT/D
MBR4045PT
DIODE 638 MOTOROLA
MBR4045PT
B4045
ANSI 45 rectifier
rectifier diode 20 amp 800 volt
340D-02
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Untitled
Abstract: No abstract text available
Text: MBR4045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com Features • Pb−Free Package is Available*
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MBR4045PT
MBR4045PT/D
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mbr4045pt
Abstract: No abstract text available
Text: MBR4045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com Features • Pb−Free Package is Available*
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MBR4045PT
MBR4045PT/D
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JESD22-B102D
Abstract: J-STD-002B MBR4035PT MBR4045PT MBR4050PT MBR4060PT
Text: MBR4035PT thru MBR4060PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop 3 • High forward surge capability 2 1 • High frequency operation
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MBR4035PT
MBR4060PT
O-247AD
2002/95/EC
2002/96/EC
08-Apr-05
JESD22-B102D
J-STD-002B
MBR4045PT
MBR4050PT
MBR4060PT
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MBR4060PT
Abstract: JESD22-B102D J-STD-002B MBR4035PT MBR4045PT MBR4050PT
Text: MBR4035PT thru MBR4060PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop 3 • High forward surge capability 2 1 • High frequency operation
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MBR4035PT
MBR4060PT
O-247AD
2002/95/EC
2002/96/EC
08-Apr-05
MBR4060PT
JESD22-B102D
J-STD-002B
MBR4045PT
MBR4050PT
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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rectifier diode 6 amp 400 volt
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier M B R 4045PT The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 may be connected for Parallel
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MBR4045PT
rectifier diode 6 amp 400 volt
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBR4045PT/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR4045PT SW ITCHMODE Power R ectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the
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MBR4045PT/D
MBR4045PT
340D-02
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rectifier diode 20 amp 800 volt
Abstract: rectifier diode 4 amp 600 volt 50 Amp current 100 volt diode B4045 MBR4045PT blocking diode 20 amp 100 volt rectifier diode 20 amp 400 volt 400 amp 20 volt rectifier
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SW ITC HM O D E P ow er R e c tifie r MBR4045PT The SW ITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:
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MBR4045PT
MBR4045PT
rectifier diode 20 amp 800 volt
rectifier diode 4 amp 600 volt
50 Amp current 100 volt diode
B4045
blocking diode 20 amp 100 volt
rectifier diode 20 amp 400 volt
400 amp 20 volt rectifier
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MBR4045PT
Abstract: G40A vip 20a schottky rectifier 3amp SAA 1020
Text: P D -2 .3 4 3 International gel Rectifier MBR4045PT SCHOTTKY RECTIFIER 40 Amp Description/Features Major Ratings and Characteristics MBR4045PT Units Characteristics The MBR4045PT center tap Schottky rectilier has been optimized for very low forward voltage drop, with moderate
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MBR4045PT
MBR4045PT
20Apk
TJ-125Â
-55to150
40hf140s02
G40A
vip 20a
schottky rectifier 3amp
SAA 1020
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