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    DIODE MARKING EA Search Results

    DIODE MARKING EA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING EA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS19

    Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
    Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol


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    PDF BAS19LT1, BAS20LT1, BAS21LT1 BAS19LT1 BAS20LT1 BAS19 BAS20 BAS21 r14525 BAS19 BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR


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    PDF LBAS20HT1G 3000/Tape LBAS20HT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel


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    PDF LBAS21HT1G 3000/Tape LBAS21HT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LBAV99LT1G Dual Series Switching Diode • We declare that the material of product 3 compliance with RoHS requirements. 1 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7


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    PDF LBAV99LT1G LBAV99LT3G OT-23

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    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode LBAV70LT1G FEATURE • We declare that the material of product 3 compliance with RoHS requirements. 1 DEVICE MARKING AND ORDERING INFORMATION Device Marking 2 Shipping LBAV70LT1G A4


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    PDF LBAV70LT1G LBAV70LT3G OT-23

    Untitled

    Abstract: No abstract text available
    Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.


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    PDF 1N5408

    LBAL99WT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LBAL99WT1G Switching Diode • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING ORDERING INFORMATION . Device Marking LBAL99WT1G JF 3000 Tape & Reel JF 10000 Tape & Reel LBAL99WT1G SC-70


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    PDF LBAL99WT1G SC-70 LBAL99WT1G

    Untitled

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • 1 2 20856 • • • 20855 MARKING example only XY • • • • 21121 Bar = cathode marking Y = type code (see table below)


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    PDF VBUS051BD-HD1 LLP1006-2L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    VBUS05L1-DD1-G-08

    Abstract: No abstract text available
    Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking


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    PDF VBUS05L1-DD1 LLP1006-2M LLP1006-2M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VBUS05L1-DD1-G-08

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7 10000 Tape & Reel 1 2 2 CATHODE 1 ANODE 3 CAHODE/ANODE


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    PDF LBAV99LT1G LBAV99LT3G

    Untitled

    Abstract: No abstract text available
    Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking


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    PDF VBUS05L1-DD1 LLP1006-2M LLP1006-2M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating


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    PDF LBAS16LT1G OT-23 3000/Tape LBAS16LT3G 10000/Tape

    LBAV99LT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING LBAV99LT1 = A7 SOT–23 MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage


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    PDF LBAV99LT1 OT-23 LBAV99LT1-3/3 LBAV99LT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1 • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1 A7 3000 Tape & Reel 1 1 ANODE 2 2 CATHODE 3 CAHODE/ANODE LBAV99LT1G A7 Pb-Free 3000 Tape & Reel


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    PDF LBAV99LT1 LBAV99LT1G OT-23 LBAV99LT1-3/3

    BAV74LT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF Value


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    PDF BAV74LT1 236AB) BAV74LT1

    Marking g51

    Abstract: BAV70LT1
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc


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    PDF BAV70LT1 236AB) Marking g51 BAV70LT1

    Untitled

    Abstract: No abstract text available
    Text: Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage


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    PDF BAV99LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc FM(surge) 500 mAdc Symbol


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    PDF BAV70LT1 236AB)

    Untitled

    Abstract: No abstract text available
    Text: Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF Value 50 200 Unit Vdc mAdc Peak Forward Surge Current


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    PDF BAV74LT1 236AB)

    VISHAY diode MARKING EG

    Abstract: No abstract text available
    Text: VBUS051BD-HD1 Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode FEATURES • • • • • • • 1 2 20856 20855 MARKING example only • XY • • • 21121 Bar = cathode marking Y = type code (see table below) X = date code Ultra compact LLP1006-2L package


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    PDF VBUS051BD-HD1 LLP1006-2L 2002/95/EC 2002/96/EC 11-Mar-11 VISHAY diode MARKING EG

    BAS16

    Abstract: BAS16D
    Text: BAS16D VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 Mechanical Data Case: SOD-123 Plastic Case Weight: approx.10 mg Marking: A6


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    PDF BAS16D OT-23 BAS16 OD-123 D3/10 D-74025 13-Jun-03 BAS16 BAS16D

    BAS16

    Abstract: BAS16WS
    Text: BAS16WS VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 Mechanical Data Case: SOD-323 Plastic Case Weight: approx. 4 mg Marking: A6


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    PDF BAS16WS OT-23 BAS16 OD-323 D5/10 D-74025 24-Jun-03 BAS16 BAS16WS

    BAS21HT1

    Abstract: No abstract text available
    Text: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc 625 mAdc Max Unit 200


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    PDF BAS21HT1 r14153 BAS21HT1/D BAS21HT1

    E72873

    Abstract: VUB116-16NOXT
    Text: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product


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    PDF 116-16NOXT VUB116-16NOXT E72873 20110907b E72873 VUB116-16NOXT