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    DIODE MARKING EA Search Results

    DIODE MARKING EA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING EA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS19

    Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
    Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol


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    PDF BAS19LT1, BAS20LT1, BAS21LT1 BAS19LT1 BAS20LT1 BAS19 BAS20 BAS21 r14525 BAS19 BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel


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    PDF LBAS21HT1G 3000/Tape LBAS21HT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.


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    PDF 1N5408

    VBUS05L1-DD1-G-08

    Abstract: No abstract text available
    Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking


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    PDF VBUS05L1-DD1 LLP1006-2M LLP1006-2M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 VBUS05L1-DD1-G-08

    Untitled

    Abstract: No abstract text available
    Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking


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    PDF VBUS05L1-DD1 LLP1006-2M LLP1006-2M 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    LBAV99LT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING LBAV99LT1 = A7 SOT–23 MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage


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    PDF LBAV99LT1 OT-23 LBAV99LT1-3/3 LBAV99LT1

    DIODE G7

    Abstract: BAV99LT1 G7 diode
    Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current


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    PDF BAV99LT1 236AB) DIODE G7 BAV99LT1 G7 diode

    BAV74LT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF Value


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    PDF BAV74LT1 236AB) BAV74LT1

    Marking g51

    Abstract: BAV70LT1
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc


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    PDF BAV70LT1 236AB) Marking g51 BAV70LT1

    BAS16

    Abstract: BAS16D
    Text: BAS16D VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 Mechanical Data Case: SOD-123 Plastic Case Weight: approx.10 mg Marking: A6


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    PDF BAS16D OT-23 BAS16 OD-123 D3/10 D-74025 13-Jun-03 BAS16 BAS16D

    E72873

    Abstract: VUB116-16NOXT
    Text: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product


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    PDF 116-16NOXT VUB116-16NOXT E72873 20110907b E72873 VUB116-16NOXT

    400HB

    Abstract: No abstract text available
    Text: DPF 60 IM 400HB not released V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns 1 Part number Marking on product 2 DPF 60 IM 400HB 3 Features / Advantages: Applications: Package:


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    PDF 400HB O-247AD 60747and 400HB

    Untitled

    Abstract: No abstract text available
    Text: DSA 10 I 100PM advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number 100 V 10 A 0.72 V Marking on product DSA 10 I 100PM 1 3 Features / Advantages: Applications: ● Very low Vf ● Extremely low switching losses


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    PDF 100PM O-220FPAC 60747and

    A0540

    Abstract: No abstract text available
    Text: DHF 30 IM 600PN advanced V RRM = I FAV = t rr = Sonic-FRD High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 15 A 35 ns 1 Part number Marking on product 2 DHF 30 IM 600PN 3 Features / Advantages: Applications: Package: ● Planar passivated chips


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    PDF 600PN O-220FPAB 60747and A0540

    Untitled

    Abstract: No abstract text available
    Text: 808nm Butterfly Packaged Diode Laser K81S14F-2.00W Key Features: Š 2W output power Š 105µm fiber core diameter Š 0.22NA Š 808nm wavelength Applications: Š Laser pumping Š Medical use Š Printing Š Heating Š Material processing Š Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by


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    PDF 808nm K81S14F-2 /bwt/808nm/k81s14f

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO.,LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE 3 EQUIVALENT 3 K A A K 2 2 1 SOT-23 MARKING 3 *Pb-free plating product number: BAV99L V99 2 1 PIN CONFIGURATION PIN NO. PIN NAME 1 K1 2 A2 3 K2, A1 1 ORDERING INFORMATION Order Number


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    PDF BAV99 OT-23 BAV99L BAV99-AE3-R BAV99L-AE3-R QW-R601-005

    14538

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features  Marking Symbol : 30 5.9 6.15


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    PDF TT4-EA-14538 SK8603300L UL-94 14538

    design ideas

    Abstract: ZHCS400 TS16949
    Text: ZHCS400 SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” FEATURES PINOUT - TOP VIEW • Low VF SOD323 • High current capability • Miniature surface mount package APPLICATIONS • DC - DC converters • Mobile telecomms • PCMCIA DEVICE MARKING


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    PDF ZHCS400 OD323 OD323 400mA design ideas ZHCS400 TS16949

    VISHAY diode MARKING ED

    Abstract: VISHAY MARKING ED diode k77 K77 diode
    Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case


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    PDF BAT750 OT-23 BAT750 BAT750-GS18 BAT750-GS08 08-Apr-05 VISHAY diode MARKING ED VISHAY MARKING ED diode k77 K77 diode

    VISHAY diode MARKING ED

    Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
    Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case


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    PDF BAT750 OT-23 BAT750-GS18 BAT750-GS08 D-74025 24-May-04 VISHAY diode MARKING ED VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues • We declare that the material of product 3 compliance with RoHS requirements. 1 Ordering Information 2 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel


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    PDF LBAV74LT1G 3000/Tape LBAV74LT3G 10000/Tape OT-23

    Fuji Electric SM

    Abstract: No abstract text available
    Text: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.


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    PDF YG811S06R Fuji Electric SM

    Untitled

    Abstract: No abstract text available
    Text: ea flaBTH ü üüo ?i 4 o n BAS16 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m Marking BASI 6 = A6 _3.0_ 2.8 0 14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = ANODE 2 = NC 3 = CATHODE


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    PDF BAS16 150mA

    DIODE S3V 63

    Abstract: No abstract text available
    Text: Axial Diode Single Diode Avalanche type • O U T L IN E D IM E N S IO N S D ‘ Cathode (D • Anode S3VDZ 7.5MAX 24MIN 600V 3.5A 24MIN II JLi o-— M Marking S3V □D _ Type No. (S4.8MAX -■0 x-inwH JiM i! ■ +1 63 / C olor code, Cathode band


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    PDF 24MIN S3V60Z DIODE S3V 63