BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
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BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19
BAS19LT1
BAS20
BAS20LT1
BAS21
BAS21LT1
sot23 marking JR
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel
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LBAS21HT1G
3000/Tape
LBAS21HT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.
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1N5408
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VBUS05L1-DD1-G-08
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VBUS05L1-DD1-G-08
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Untitled
Abstract: No abstract text available
Text: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking
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VBUS05L1-DD1
LLP1006-2M
LLP1006-2M
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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LBAV99LT1
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING LBAV99LT1 = A7 SOT–23 MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage
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LBAV99LT1
OT-23
LBAV99LT1-3/3
LBAV99LT1
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DIODE G7
Abstract: BAV99LT1 G7 diode
Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode BAV99LT1 3 2 CATHODE 1 ANODE 3 CAHODE/ANODE 1 2 DEVICE MARKING CASE 318–08, STYLE 11 BAV99LT1 = A7 SOT–23 TO–236AB MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current
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BAV99LT1
236AB)
DIODE G7
BAV99LT1
G7 diode
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BAV74LT1
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF Value
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BAV74LT1
236AB)
BAV74LT1
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Marking g51
Abstract: BAV70LT1
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Cathode BAV70LT1 3 1 ANODE 3 CATHODE 1 2 2 ANODE CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV70LT1 = A4 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value 70 200 Unit Vdc mAdc
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BAV70LT1
236AB)
Marking g51
BAV70LT1
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BAS16
Abstract: BAS16D
Text: BAS16D VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 Mechanical Data Case: SOD-123 Plastic Case Weight: approx.10 mg Marking: A6
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BAS16D
OT-23
BAS16
OD-123
D3/10
D-74025
13-Jun-03
BAS16
BAS16D
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E72873
Abstract: VUB116-16NOXT
Text: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product
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116-16NOXT
VUB116-16NOXT
E72873
20110907b
E72873
VUB116-16NOXT
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400HB
Abstract: No abstract text available
Text: DPF 60 IM 400HB not released V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns 1 Part number Marking on product 2 DPF 60 IM 400HB 3 Features / Advantages: Applications: Package:
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400HB
O-247AD
60747and
400HB
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Untitled
Abstract: No abstract text available
Text: DSA 10 I 100PM advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number 100 V 10 A 0.72 V Marking on product DSA 10 I 100PM 1 3 Features / Advantages: Applications: ● Very low Vf ● Extremely low switching losses
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100PM
O-220FPAC
60747and
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A0540
Abstract: No abstract text available
Text: DHF 30 IM 600PN advanced V RRM = I FAV = t rr = Sonic-FRD High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 15 A 35 ns 1 Part number Marking on product 2 DHF 30 IM 600PN 3 Features / Advantages: Applications: Package: ● Planar passivated chips
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600PN
O-220FPAB
60747and
A0540
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Untitled
Abstract: No abstract text available
Text: 808nm Butterfly Packaged Diode Laser K81S14F-2.00W Key Features: 2W output power 105µm fiber core diameter 0.22NA 808nm wavelength Applications: Laser pumping Medical use Printing Heating Material processing Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by
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808nm
K81S14F-2
/bwt/808nm/k81s14f
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO.,LTD BAV99 DIODE HIGH CONDUCTANCE ULTRA FAST DIODE 3 EQUIVALENT 3 K A A K 2 2 1 SOT-23 MARKING 3 *Pb-free plating product number: BAV99L V99 2 1 PIN CONFIGURATION PIN NO. PIN NAME 1 K1 2 A2 3 K2, A1 1 ORDERING INFORMATION Order Number
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BAV99
OT-23
BAV99L
BAV99-AE3-R
BAV99L-AE3-R
QW-R601-005
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14538
Abstract: No abstract text available
Text: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features Marking Symbol : 30 5.9 6.15
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TT4-EA-14538
SK8603300L
UL-94
14538
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design ideas
Abstract: ZHCS400 TS16949
Text: ZHCS400 SOD323 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” FEATURES PINOUT - TOP VIEW • Low VF SOD323 • High current capability • Miniature surface mount package APPLICATIONS • DC - DC converters • Mobile telecomms • PCMCIA DEVICE MARKING
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ZHCS400
OD323
OD323
400mA
design ideas
ZHCS400
TS16949
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VISHAY diode MARKING ED
Abstract: VISHAY MARKING ED diode k77 K77 diode
Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case
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BAT750
OT-23
BAT750
BAT750-GS18
BAT750-GS08
08-Apr-05
VISHAY diode MARKING ED
VISHAY MARKING ED
diode k77
K77 diode
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VISHAY diode MARKING ED
Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
Text: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case
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BAT750
OT-23
BAT750-GS18
BAT750-GS08
D-74025
24-May-04
VISHAY diode MARKING ED
VISHAY MARKING ED
ED MARKING Vishay
K77 diode
VISHAY MARKING EA
BAT750
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues • We declare that the material of product 3 compliance with RoHS requirements. 1 Ordering Information 2 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel
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LBAV74LT1G
3000/Tape
LBAV74LT3G
10000/Tape
OT-23
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Fuji Electric SM
Abstract: No abstract text available
Text: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.
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YG811S06R
Fuji Electric SM
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Untitled
Abstract: No abstract text available
Text: ea flaBTH ü üüo ?i 4 o n BAS16 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m Marking BASI 6 = A6 _3.0_ 2.8 0 14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = ANODE 2 = NC 3 = CATHODE
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BAS16
150mA
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DIODE S3V 63
Abstract: No abstract text available
Text: Axial Diode Single Diode Avalanche type • O U T L IN E D IM E N S IO N S D ‘ Cathode (D • Anode S3VDZ 7.5MAX 24MIN 600V 3.5A 24MIN II JLi o-— M Marking S3V □D _ Type No. (S4.8MAX -■0 x-inwH JiM i! ■ +1 63 / C olor code, Cathode band
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24MIN
S3V60Z
DIODE S3V 63
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