philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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Q62702-B580
Abstract: No abstract text available
Text: BB 535 Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance Type Marking Ordering Code Pin Configuration Package BB 535 white S 1=C SOD-323 Q62702-B580 2=A Maximum Ratings Parameter Symbol Values
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OD-323
Q62702-B580
Jan-08-1997
CTA/C25
Q62702-B580
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VCUT07B1-HD1
Abstract: VCUT07B1
Text: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code
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VCUT07B1-HD1
LLP1006-2L
LLP1006-2L
2011/65/EU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
VCUT07B1-HD1
VCUT07B1
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Untitled
Abstract: No abstract text available
Text: VCUT07B1-HD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Single Line ESD-Protection Diode in LLP1006-2L FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) • XY • • • 21121 Bar = pin 1marking X = date code
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VCUT07B1-HD1
LLP1006-2L
LLP1006-2L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 800 V RDS on (max) 1.05 Ω Qg 53 nC Features Block Diagram ● Low RDS(ON) 1.05Ω (Max.) ● Low gate charge typical @ 53nC (Typ.)
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TSM10N80
O-220
ITO-220
50pcs
TSM10N80CZ
TSM10N80CI
900ppm
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Untitled
Abstract: No abstract text available
Text: PPJA3402 30V N-Channel Enhancement Mode MOSFET Voltage 30 V SOT-23 4.4A Current Unit: inch mm Features RDS(ON) , VGS@10V, [email protected]<48mΩ RDS(ON) , [email protected], [email protected]<53mΩ RDS(ON) , [email protected], [email protected]<66mΩ RDS(ON) , [email protected], [email protected]<92mΩ
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PPJA3402
OT-23
2011/65/EU
IEC61249
OT-23
MIL-STD-750,
2014-REV
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AP9408AGH
Abstract: marking 30A
Text: AP9408AGH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 10mΩ ID G 53A S Description Advanced Power MOSFETs from APEC provide the
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AP9408AGH
O-252
O-252
9408AGH
AP9408AGH
marking 30A
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a1273 transistor
Abstract: A1273 br a1273 transistor A1274 Q62702-A1273 a1273* transistor datasheet A1271 transistor a1271 a1273* transistor transistor a1273
Text: BAT 17W Silicon Schottky Diodes 3 • For mixer applications in the VHF / UHF range • For high-speed switching applications 2 1 BAT 17W BAT 17-04W BAT 17-05W VSO05561 BAT 17-06W Type Marking Ordering Code Pin Configuration Package BAT 17W 53s Q62702-A1271
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7-04W
7-05W
VSO05561
7-06W
Q62702-A1271
Q62702-A1272
Q62702-A1273
a1273 transistor
A1273
br a1273 transistor
A1274
Q62702-A1273
a1273* transistor datasheet
A1271
transistor a1271
a1273* transistor
transistor a1273
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IRFZ46N
Abstract: for IRFZ46N MOSFET IRFZ46N transistor IRFZ46N IRF1010
Text: PD-91277A IRFZ46N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 16.5mΩ G ID = 53A S Description Advanced HEXFET® Power MOSFETs from International
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PD-91277A
IRFZ46N
O-220
O-220AB
IRF1010
IRFZ46N
for IRFZ46N
MOSFET IRFZ46N
transistor IRFZ46N
IRF1010
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Untitled
Abstract: No abstract text available
Text: PD - 94952 IRFZ46NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 16.5mΩ G ID = 53A
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IRFZ46NPbF
O-220
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marking code INFINEON
Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
Text: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W
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BBY53.
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03W
BBY53-03LRH
BBY53
BBY53-05W
marking code INFINEON
BBY53
M 21 marking code diode
BAR63-02V
BBY53-02L
BBY53-02V
BBY53-02W
BBY53-03LRH
BBY53-03W
BBY53-05W
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APM4953A
Abstract: APM4953
Text: APM4953AK Dual P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-4.9A , RDS ON =53mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)
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APM4953AK
-30V/-4
APM4953A
APM4953
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SCD80
Abstract: marking code INFINEON INFINEON marking marking code diode 04 BAR63-02V BB639C BB659C BB659C-02V marking code of 0 to Z DIODE Q marking
Text: BB639C/BB659C. Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure
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BB639C/BB659C.
BB639C
BB659C/-02V
BB659C
BB659C-02V
OD323
SCD80
SCD80
marking code INFINEON
INFINEON marking
marking code diode 04
BAR63-02V
BB639C
BB659C
BB659C-02V
marking code of 0 to Z
DIODE Q marking
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BB639
Abstract: BAR63-02W BAR63-03W BB659 SC79 SCD80 DIODE Q marking Y10K
Text: BB639/BB659. Silicon Variable Capacitance Diodes • For tuning of extended frequency band in VHF TV / VTR tuners • High capactance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure
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BB639/BB659.
BB639
BB659
OD323
SCD80
BB639
BAR63-02W
BAR63-03W
BB659
SC79
SCD80
DIODE Q marking
Y10K
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BB664
Abstract: BB644 BB664-02V SC79 SCD80 BAR63-02V sod323 diode marking code AC
Text: BB644 /BB664. Silicon Variable Capacitance Diodes • For VHF TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure BB644 BB664/-02V Type
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BB644
/BB664.
BB644
BB664/-02V
BB664
BB664-02V
OD323
SCD80
BB664
BB664-02V
SC79
SCD80
BAR63-02V
sod323 diode marking code AC
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Q62702B
Abstract: marking L
Text: SIEMENS BBY 53-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration
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OCR Scan
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3-02W
Q62702-B0862
SCD-80
Q62702B
marking L
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-A0062
OD-123
EHA07001
EHD07088
fl535bQ5
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erc06
Abstract: A537 A536
Text: ERC06H sa • « * » • * » : Outline Drawings FAST RECO VERY DIODE ■ 4$^ : Features : Marking Most suitable for color T.V. damper < 7- 3 —K : S : Blue High voltage by mesa design. Color code High reliability Abridged type name : Applications <T3 - C">
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OCR Scan
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ERC06H
I95t/R89)
erc06
A537
A536
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Marking A7S sot
Abstract: No abstract text available
Text: SIEMENS BAV 99S Silicon Sw itching Diode Array • For high-speed switching applications • Connected in series • Internal galvanic isolated Diodes in one package Type Marking O rdering Code Pin C onfiguration BAV 99S A7s 1/4 = A1 Q62702-A1277 Package
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OCR Scan
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PDF
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Q62702-A1277
OT-363
EHN00019
100ns,
Marking A7S sot
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TSE 151
Abstract: No abstract text available
Text: ERC01 1.5A I Outline Drawings GENERAL USE RECTIFIER DIODE : Features • W ide voltage class • BG fSISii • I I tjv : Marking High reliability ■ E I& : Applications * 5-u - K : É Color code : White •« » ¿ ft / General purpose rectifier applications
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OCR Scan
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PDF
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ERC01
Jlrt54]
l95t/R89
TSE 151
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TFK 715
Abstract: BAW56S
Text: SIEMENS BAW 56S Silicon Switching Diode Array • For high-speed switching applications • Common anode • Internal galvanic isolated Diodes in one package Type Marking Ordering Code Pin Configuration BAW 56S A1s 1/4 = C1 Q62702-A1253 Package 2/5 = C2 3/6 = A1/2 SOT-363
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OCR Scan
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Q62702-A1253
OT-363
100ns,
TFK 715
BAW56S
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151S5
Abstract: No abstract text available
Text: ERC05 1 .2A - * ’ Outline Drawings _ GENERAL USE R EC TIFIER DIODE ! Features • If— Hi gh surge current • Sift fl 14 • S tf I Marking High reliability : Applications A 7 - 3 - K : fi Color code : Orange • V X S tifc General purpose rectifier applications
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OCR Scan
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PDF
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ERC05
l95t/R89
151S5
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marking AF
Abstract: diode ERD28
Text: ERD28 i .5A K : Outline Drawings FAST RECOVERY DIODE I Features High voltage by mesa design. H S I tF • Marking • f tflH R tt High reliability A f —3 - V Color code Green «ÂfêS • 51& : Applications Abridged type name 5* Voltage class High speed switching.
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OCR Scan
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ERD28
I-125
I95t/R
marking AF
diode ERD28
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BAV70 SIEMENS
Abstract: No abstract text available
Text: i n - ~Î~-OZ Silicon Switching Diode Array _ 3SE D • a53b3S0 Q 01b 53 1 BAV70 T M S IP SIEMENS/ SPCL-i SENICONDS •
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a53b3S0
BAV70
Q68000-A3574
Q68000-A6622
23b320
001b533
BAV70
a01bS3M
BAV70 SIEMENS
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