philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Diode RL 4B
Abstract: phototransistor microwaves Diode 4B PS2841-4A PS2841-4B 4b, optocoupler PS280X
Text: PRELIMINARY DATA SHEET WORLD'S SMALLEST CLASS, PS2841-4A FOUR CHANNEL, 12 PIN PS2841-4B ULTRA SMALL SOP OPTOCOUPLER FEATURES DESCRIPTION • COMMON LEAD: PS2841-4A: cathode, collector common PS2841-4B: anode, collector common The PS2841-4A and PS2841-4B are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon
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PS2841-4A
PS2841-4B
PS2841-4A:
PS2841-4B:
PS2841-4A
PS2841-4B
12-pin
Diode RL 4B
phototransistor microwaves
Diode 4B
4b, optocoupler
PS280X
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Diode 4B
Abstract: Diode RL 4B phototransistor microwaves PS2841-4A PS2841-4B 4B marking
Text: WORLD'S SMALLEST CLASS, PS2841-4A FOUR CHANNEL, 12 PIN PS2841-4B ULTRA SMALL SOP OPTOCOUPLER FEATURES DESCRIPTION • COMMON LEAD: PS2841-4A: cathode, collector common PS2841-4B: anode, collector common The PS2841-4A and PS2841-4B are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon
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PS2841-4A
PS2841-4B
PS2841-4A:
PS2841-4B:
PS2841-4A
PS2841-4B
12-pin
PS280X
Diode 4B
Diode RL 4B
phototransistor microwaves
4B marking
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . ESD Protection Diode VCUT07B1-HD1 Bidirectional Symmetrical BiSy Single-Line ESD Protection Diode in Ultra-Compact LLP1006-2L Package KEY BENEFITS • Ultra-compact LLP1006-2L package –– Small footprint: 1.0 mm by 0.6 mm
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VCUT07B1-HD1
LLP1006-2L
31-May-12
VMN-PT0321-1411
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SB220-G
Abstract: SB245-G SB250-G SB260-G SB280-G SB2100-G
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB220-G Thru. SB2100-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device DO-41 Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring .107(2.7) .080(2.0) -High surge current capability
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SB220-G
SB2100-G
DO-41
UL94-V0
MIL-STD-750
SB240
SB245
SB250
SB260
SB245-G
SB250-G
SB260-G
SB280-G
SB2100-G
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SB320-G
Abstract: SB345-G SB350-G SB360-G SB380-G SB3100-G
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)
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SB320-G
SB3100-G
DO-201AD
UL94-V0
MIL-STD-750
45B-G
SB350B-G
SB360B-G
SB380B-G
SB345-G
SB350-G
SB360-G
SB380-G
SB3100-G
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Untitled
Abstract: No abstract text available
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability 1.0 25.4 Min.
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SB120-G
SB1100-G
DO-41
UL94-V0
MIL-STD-750
SB140
SB145
SB150
SB160
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Untitled
Abstract: No abstract text available
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB220-G Thru. SB2100-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device DO-41 Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. .107(2.7) .080(2.0) -High surge current capability
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SB220-G
SB2100-G
DO-41
UL94-V0
MIL-STD-750
SB240
SB245
SB250
SB260
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SB120-G
Abstract: SB145-G SB150-G SB160-G SB180-G SB1100-G
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. -High surge current capability
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SB120-G
SB1100-G
DO-41
UL94-V0
MIL-STD-750
cathode20
SB140
SB145
SB150
SB145-G
SB150-G
SB160-G
SB180-G
SB1100-G
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Untitled
Abstract: No abstract text available
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)
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SB320-G
SB3100-G
DO-201AD
UL94-V0
MIL-STD-750
SB350B-G
SB360B-G
SB380B-G
SB3100B-G
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SB550-G
Abstract: SB545-G SB520-G SB560-G SB580-G SB5100-G 5100G
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)
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SB520-G
SB5100-G
DO-201AD
UL94-V0
MIL-STD-750
45B-G
SB550B-G
SB560B-G
SB580B-G
SB550-G
SB545-G
SB560-G
SB580-G
SB5100-G
5100G
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SB320E-G
Abstract: SB345E-G SB350E-G SB360E-G SB380E-G SB3100E-G
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB320E-G
SB3100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
B360E
SB380E
SB3100E
SB345E-G
SB350E-G
SB360E-G
SB380E-G
SB3100E-G
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Untitled
Abstract: No abstract text available
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB320E-G
SB3100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
SB380E
SB3100E
SB320E
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Untitled
Abstract: No abstract text available
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB520E-G
SB5100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
Method60E
SB580E
SB5100E
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SB545E-G
Abstract: SB520E-G SB550E-G SB560E-G SB580E-G SB5100E-G
Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520E-G Thru. SB5100E-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -5.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free
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SB520E-G
SB5100E-G
DO-201AD
IEC6100-4-2
UL94-V0
MIL-STD-750
B560E
SB580E
SB5100E
SB545E-G
SB550E-G
SB560E-G
SB580E-G
SB5100E-G
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SB545
Abstract: No abstract text available
Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB520-G Thru. SB5100-G Voltage: 20 to 100 V Current: 5.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)
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SB520-G
SB5100-G
DO-201AD
UL94-V0
MIL-STD-750
SB550B-G
SB560B-G
SB580B-G
SB5100B-G
SB545
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Untitled
Abstract: No abstract text available
Text: ESDAVLC5-4BX4 4-line bidirectional Transil , transient surge voltage suppressor for ESD protection Datasheet − production data Features 2 1 • 4 bidirectional Transil diodes • Breakdown voltage VBR = 5.5 V min. • Low leakage current: < 50 nA GND • Very small PCB area: 0.64 mm2
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DocID023365
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diode blue stripe
Abstract: Wavetek 134 DSR5500X DSR5000 DSR5400X 2N4430 DSR3000 DSR5700X
Text: OPTEK TECHNOLOGY I N C 4BE D WM tiTTflSfiO 0 0 0 1 4 2 1 4S3 • OTK K LS TJ u r Product Bulletin DSR3000 May 1990 11 c i v \ £ Extra Fast Recovery Rectifiers Type DSR3000 / DSR5000 Series PACKAGE A 3 Watt ns— .028 •A- PACKAGE IS VOIDLESS. MONOLITHIC GLASS-MET AL
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OCR Scan
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PDF
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00014H1
DSR3000
DSR3000
DSR5000
diode blue stripe
Wavetek 134
DSR5500X
DSR5400X
2N4430
DSR5700X
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marking DIODE 2U 04
Abstract: 386b
Text: fhlï milita HEWLETT PACKARD Surface Mount PIN Diodes in SOT-323 SC-70 3-Lead Technical Data Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface Mount SOT-323
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OCR Scan
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PDF
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OT-323
SC-70
HSMP-381B/C/E/F
HSMP-386B/C/E/F
HSMP-389B/C/E/F
HSMP-481B,
-482B,
-489B
marking DIODE 2U 04
386b
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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OCR Scan
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PDF
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diodes • • • • £ BAS 7 0 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with C E C C quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!
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OCR Scan
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PDF
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Q62702-A118
OT-23
CHA07Ã
Q62702-A730
EHA0700S
Q62702-A711
EHA07004
Q62702-A774
EHA07006
0235bOS
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