mcma
Abstract: c750g MCMA265P1600KA Y1-CU weight thyristor code
Text: MCMA 265 PD 1600 KB preliminary V RRM = I T RMS = I T(AV)M = Thyristor \ Diode Module Voltage range: 1200 - 1800 V Phase leg 3 Part number 1 5 4 1600 V 421 A 268 A 2 MCMA 265 PD 1600 KB Features / Advantages: Applications: Package: ● Thyristor for line frequency
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60747and
mcma
c750g
MCMA265P1600KA
Y1-CU weight
thyristor code
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MCMA265P1600KA
Abstract: Al2O3
Text: MCMA 265 P 1600 KA preliminary V RRM = I T RMS = I T(AV)M = Thyristor Module Voltage range: 1200 - 1800 V Phase leg Part number 3 6 7 1 5 4 1600 V 421 A 268 A 2 MCMA 265 P 1600 KA Features / Advantages: Applications: Package: ● Thyristor for line frequency
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60747and
MCMA265P1600KA
Al2O3
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
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MOSFET IRFB 630
Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
MOSFET IRFB 630
IRFB 630
93804B
MOSFET IRFB 630 Datasheet
transistor IRF 630
AN1001
IRF1010
IRFIB41N15D
IRFS41N15D
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IRFB 630
Abstract: MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFB41N15D IRFIB41N15D
Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
IRFB 630
MOSFET IRFB 630 Datasheet
MOSFET IRFB 630
transistor IRF 630
120V DC to DC Converter 10A
TO-220 FULLPAK Package
AN1001
IRF1010
IRFIB41N15D
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IRFB 630
Abstract: No abstract text available
Text: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See
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93804B
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
AN1001)
O-220AB
O-220
O-262
IRFB41N15D
IRFB 630
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IRF3706
Abstract: IRF3706L IRF3706S IRF530S IRL3103L
Text: PD - 93936C IRF3706 IRF3706S IRF3706L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS
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93936C
IRF3706
IRF3706S
IRF3706L
O-220AB
O-262
O-220AB
IRF3706
IRF3706L
IRF3706S
IRF530S
IRL3103L
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IRF3706
Abstract: IRF3706L IRF3706S IRF530S IRL3103L ED marking code diode to262 pcb footprint
Text: PD - 93936C IRF3706 IRF3706S IRF3706L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS
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93936C
IRF3706
IRF3706S
IRF3706L
O-220AB
O-262
AN-994.
IRF3706
IRF3706L
IRF3706S
IRF530S
IRL3103L
ED marking code diode
to262 pcb footprint
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IRL3103L
Abstract: IRF9Z24S
Text: PD-95989 IRF9Z24SPbF IRF9Z24LPbF Lead-Free www.irf.com 1 06/08/05 IRF9Z24S/LPbF 2 www.irf.com IRF9Z24S/LPbF www.irf.com 3 IRF9Z24S/LPbF 4 www.irf.com IRF9Z24S/LPbF www.irf.com 5 IRF9Z24S/LPbF 6 www.irf.com IRF9Z24S/LPbF Peak Diode Recovery dv/dt Test Circuit
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PD-95989
IRF9Z24SPbF
IRF9Z24LPbF
IRF9Z24S/LPbF
Wavef957)
IRL3103L
IRF9Z24S
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IRFB41N15DPBF
Abstract: AN1001 IRF530S IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Text: PD - 94927 IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15D IRFSL41N15D Applications l l High frequency DC-DC converters Lead-Free only the TO-220AB and TO-220 FullPak version is currently available in a lead-free configuration HEXFET Power MOSFET VDSS RDS(on) max
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IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15D
IRFSL41N15D
O-220AB
O-220
AN1001)
O-220
O-262
IRFB41N15DPBF
AN1001
IRF530S
IRFB41N15D
IRFIB41N15D
IRFS41N15D
IRFSL41N15D
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L3103L
Abstract: l3103 AN-994 IRF3706 IRF3706L IRF3706S Marking Code YE
Text: PD - 95385 SMPS MOSFET Applications High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free IRF3706PbF IRF3706SPbF IRF3706LPbF HEXFET Power MOSFET
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IRF3706PbF
IRF3706SPbF
IRF3706LPbF
O-220AB
IRF3706
IRF3706S
O-262
IRF3706L
IRF3706/S/LPbF
L3103L
l3103
AN-994
IRF3706
IRF3706L
IRF3706S
Marking Code YE
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L3103L
Abstract: to262 pcb footprint mosfet p-channel 04 mb l3103 pulse transformer 1039 AN-994 IRF3706 IRF3706L IRF3706S mosfet marking LY
Text: PD - 95385 SMPS MOSFET Applications High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free IRF3706PbF IRF3706SPbF IRF3706LPbF HEXFET Power MOSFET
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IRF3706PbF
IRF3706SPbF
IRF3706LPbF
O-220AB
IRF3706
IRF3706S
O-262
IRF3706L
IRF3706/S/LPbF
L3103L
to262 pcb footprint
mosfet p-channel 04 mb
l3103
pulse transformer 1039
AN-994
IRF3706
IRF3706L
IRF3706S
mosfet marking LY
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IR520NS
Abstract: IR520
Text: PD- 95592 IRL520NSPbF IRL520NLPbF Lead-Free www.irf.com 1 07/21/04 IR520NS/LPbF 2 www.irf.com IRL520NS/LPbF www.irf.com 3 IR520NS/LPbF 4 www.irf.com IRL520NS/LPbF www.irf.com 5 IR520NS/LPbF 6 www.irf.com IRL520NS/LPbF Peak Diode Recovery dv/dt Test Circuit
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IRL520NSPbF
IRL520NLPbF
IR520NS/LPbF
IRL520NS/LPbF
Wavef957)
EIA-418.
IR520NS
IR520
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irf 44 n
Abstract: IRF Power MOSFET code marking "thermal via" PCB D2PAK IRF MOSFET driver 9936 B TO-220AB transistor package IRF1010 TO-262 MOSFET 2F 1 marking 9936
Text: PD - 93936B IRF3706 IRF3706S IRF3706L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS
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93936B
IRF3706
IRF3706S
IRF3706L
O-220AB
O-262
IRF3706/3706S/3706L
irf 44 n
IRF Power MOSFET code marking
"thermal via" PCB D2PAK
IRF MOSFET driver
9936 B
TO-220AB transistor package
IRF1010
TO-262 MOSFET
2F 1 marking
9936
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Untitled
Abstract: No abstract text available
Text: PD - 97002A IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce\ Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify
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7002A
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
AN1001)
O-220AB
O-262
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irfb52n15dpbf
Abstract: AN1001 AN-994 IRF1010 IRF530S IRL3103L
Text: PD - 97002A Applications l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce\ Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001 l Fully Characterized Avalanche
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7002A
AN1001)
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
O-220AB
O-262
irfb52n15dpbf
AN1001
AN-994
IRF1010
IRF530S
IRL3103L
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AN1001
Abstract: IRF530S IRL3103L IRFB
Text: PD - 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Applications l l High frequency DC-DC converters Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify
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97001C
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
AN1001)
O-220AB
O-262
IRFS38N20DPbF
AN1001
IRF530S
IRL3103L
IRFB
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Untitled
Abstract: No abstract text available
Text: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive
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IRGS4620DPbF
IRGB4620DPbF
IRGP4620D
IRGP4620DPbF
O-247AC
O-220AC
IRGP4620D-EPbF
O-247AD
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Untitled
Abstract: No abstract text available
Text: IRGS4630DPbF IRGB4630DPbF IRGP4630D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 30A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.65V @ IC = 18A n-channel Applications • Appliance Drives
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IRGS4630DPbF
IRGB4630DPbF
IRGP4630D
IRGP4630DPbF
O-247AC
IRGP4630D-EPbF
O-247AD
O-220AC
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Untitled
Abstract: No abstract text available
Text: PD- 95593 IRL530NSPbF IRL530NLPbF Lead-Free www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 www.irf.com IRL530NS/LPbF www.irf.com 5 IRL530NS/LPbF 6 www.irf.com IRL530NS/LPbF Peak Diode Recovery dv/dt Test Circuit
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IRL530NSPbF
IRL530NLPbF
IRL530NS/LPbF
EIA-418.
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L3103L
Abstract: l3103 3103L
Text: PD- 95593 IRL530NSPbF IRL530NLPbF Lead-Free www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 www.irf.com IRL530NS/LPbF www.irf.com 5 IRL530NS/LPbF 6 www.irf.com IRL530NS/LPbF Peak Diode Recovery dv/dt Test Circuit
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IRL530NSPbF
IRL530NLPbF
IRL530NS/LPbF
EIA-418.
L3103L
l3103
3103L
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Untitled
Abstract: No abstract text available
Text: PD - 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Applications l l High frequency DC-DC converters Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify
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97001C
IRFB38N20DPbF
IRFS38N20DPbF
IRFSL38N20DPbF
AN1001)
O-220AB
O-262
IRFS38N20DPbF
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6-BT
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099
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OCR Scan
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Q62702-A1017
OT-143
flS35bOS
6-BT
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Untitled
Abstract: No abstract text available
Text: SIEMENS BB 837 Silicon Tuning Diode Preliminary data • Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units • High capacitance ratio Type Marking Ordering Code Pin Configuration Package BB 837 M Q62702-B0904 1=C SOD-323
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OCR Scan
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Q62702-B0904
OD-323
fl23Sfc
Mar-27-1998
CT1/CT28
235bGS
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