IRF32N50k
Abstract: IRF32N50 SWITCHING WELDING SCHEMATIC BY MOSFET AN-7536 IGBT ZVT Full bridge ZVT Full bridge transformer IGBT resonant converter for welding FQA28N50F FDH45N50F Welding topologies
Text: www.fairchildsemi.com AN-7536 FCS Fast Body Diode MOSFET for Phase-Shifted ZVS PWM Full Bridge DC/DC Converter Sampat Shekhawat, Mark Rinehimer and Bob Brockway Discrete Power Group, Fairchild Semiconductor Introduction Topology Description Efficiency, power density, reliability, and cost are
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AN-7536
AN30000010
IRF32N50k
IRF32N50
SWITCHING WELDING SCHEMATIC BY MOSFET
AN-7536
IGBT ZVT Full bridge
ZVT Full bridge transformer IGBT
resonant converter for welding
FQA28N50F
FDH45N50F
Welding topologies
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1N4001 SMD
Abstract: DIODE 1N4001 SMD DIODE 1N4001 AN-630 AN630 FU-445 1N4001 ADN2841 fu-445sdf
Text: AN-630 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com ADN2841 Optical Evaluation Kit By Ferenc Barany, Mark Murphy, and Michael O’Flanagan INTRODUCTION This application note describes the ADN2841 laser diode
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AN-630
ADN2841
ADN2841.
FU-445-SDF
E03559
1N4001 SMD
DIODE 1N4001 SMD
DIODE 1N4001
AN-630
AN630
FU-445
1N4001
fu-445sdf
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new bright R288-2
Abstract: 24c08an new bright R288 ac14g ICS950405 CADIN14 K8T800 y532 quanta PHD108NQ03LT
Text: 5 4 3 2 1 ZI5 SYSTEM BLOCK DIAGRAM H/W MONITOR D THERMAL DIODE IN 200/266/333MHZ AMD Althon 64 P3 DDR DIMM P3, 4 DC/DC SMDDR_VTERM BOM mark ＊:no stuff P@:with PR stuff ＊@:with PR no stuff 19V IN P27,28 D DDR DIMM HyperTransport Link Y2-14.318MHz Y1-27MHz
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200/266/333MHZ
Y1-27MHz
Y2-14
318MHz
ICS950405
M10/M11
K8T800
Y5-32
768MHz
266/533MB/s
new bright R288-2
24c08an
new bright R288
ac14g
ICS950405
CADIN14
K8T800
y532
quanta
PHD108NQ03LT
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A1708
Abstract: VBT1-S5-S5-SMT BSS84LT1G MSWSS-020-40 RK73B2HTTD181J KOA Chip Resistors Packaging capacitor 22-25 mosfet 6 ghz BSS84LT1 J-STD-20C
Text: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features • Supports up to 20 watts power when cold switched • Low insertion loss 0.3 dB typical up to 2.7 GHz • High Isolation 50 dB typical up to 2.7 GHz
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MSWSS-020-40
A17088
A1708
VBT1-S5-S5-SMT
BSS84LT1G
MSWSS-020-40
RK73B2HTTD181J
KOA Chip Resistors Packaging
capacitor 22-25
mosfet 6 ghz
BSS84LT1
J-STD-20C
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bzx79c5v6
Abstract: zener diode 1w, 5v 2.1 ghz 4 WATTS 5v
Text: MSWSS-020-40 PIN Diode Series Shunt Integrated Switch Element 4 3 3 1 2,4 1 2 2012 Laser mark is input Description Features A broadband, high linearity, medium power series shunt integrated switch element in a 1.9 X 1.1 mm QFN package. This device is designed for WiMax, Wibro, WLAN, TDSCDMA and other wireless infrastructure applications. It
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MSWSS-020-40
A17088
bzx79c5v6
zener diode 1w, 5v
2.1 ghz 4 WATTS 5v
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1-450-358-11
Abstract: SI-18752 si18752 schematic diagram surround sony ry901 t1al fuse M5F79M07L T902 transformer 11ES2-NTA2B 2SA1175-HFE
Text: TA-VE150 SERVICE MANUAL AEP Model UK Model This amplifier has the Dolby Surround system. Manufactured under license from Dolby Laboratories Licensing Corporation. “Dolby”, the double-D symbol a and “Pro Logic” are trademarks of Dolby Laboratories Licensing Corporation.
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TA-VE150
RM-U150)
1-450-358-11
SI-18752
si18752
schematic diagram surround sony
ry901
t1al fuse
M5F79M07L
T902 transformer
11ES2-NTA2B
2SA1175-HFE
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002SLT1G N–Channel SOT–23 3 • We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60
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L2N7002SLT1G
236AB)
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage
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L2N7002DMT1G
195mm
150mm
10Reel/Inner
30KPCS/Inner
3000PCS/Reel
80KPCS/Inner
OT-723
OD-723
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l2n7002dw1t1g
Abstract: CASE 419B-02 sot363 ON Marking DS
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G N–Channel SC-88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value
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L2N7002DW1T1G
SC-88
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
l2n7002dw1t1g
CASE 419B-02
sot363 ON Marking DS
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sot88
Abstract: 419B-02
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–88 L2N7002DW1T1G/T3G • Pb−Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR
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L2N7002DW1T1G/T3G
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
30KPCS/Inner
sot88
419B-02
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L2N7002DW1T1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFEO 115 mAmps, 60 Volts N–Channel SOT–363 L2N7002DW1T1G/T3G • Pb−Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR
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L2N7002DW1T1G/T3G
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
30KPCS/Inner
L2N7002DW1T1G
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702 sot
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60
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L2N7002LT1G
236AB)
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
702 sot
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L2N7002DW
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G S-L2N7002DW1T1G N–Channel SC-88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring
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L2N7002DW1T1G
S-L2N7002DW1T1G
SC-88
AEC-Q101
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
L2N7002DW
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L2N7002DMT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G S-L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring
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L2N7002DMT1G
S-L2N7002DMT1G
AEC-Q101
SC-74
195mm
150mm
10Reel/Inner
30KPCS/Inner
3000PCS/Reel
L2N7002DMT1G
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Zener Diode B1 9
Abstract: hzu2.2btlf HZU22B1 PRI 504 diode
Text: HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer Features Outline • Ultra small Resin package URP is suitable for surface mount design. Cathode mark Mark T r i= • These diodes are delivered taped. itr H 2 Ordering Information Type No. Laser Mark
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7B1 zener diode
Abstract: Zener Diode B1 9 zener 3B2 HZU3.3 HZU22B1
Text: ADE-208-024C Z HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 3 Aug. 1995 Outline • Ultra small Eesin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Cathode mark Mark Ordering Information
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ADE-208-024C
7B1 zener diode
Zener Diode B1 9
zener 3B2
HZU3.3
HZU22B1
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qo-10
Abstract: diode mark L2
Text: HITACHI ADE-208-413 Z HSC277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch HITACHI Features Rev. 0 Nov. 1995 Outline • Low forward resistance. (rp().7i2 max) • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark
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HSC277
ADE-208-413
100MHz
HSC277
SC-79
qo-10
diode mark L2
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16FL2CZ
Abstract: No abstract text available
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 16(D, F)L2CZ47A Unit in SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage - 03.2 ± 0.2 - : V r r m =200, 300V • Average Output Rectified Current : Io=16A
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L2CZ47A
16DL2CZ47A
16FL2CZ47A
16DL2CZ47AJ
16FL2CZ47A)
16FL2CZ
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100L2CZ
Abstract: 10GL2CZ 100L2C 10FL2CZ 10dl2cz
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 10(D,F,G)L2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION. Unit in mm CONVERTER & CHOPPER APPLICATION. 10.3 MAX 03.2±O .2 • Repetitive Peak Reverse Voltage : V^^=200, 300, 400V • Average Output Recified Current : Io=10A
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L2CZ47A
100L2CZ47A
10FL2CZ47A
10GL2CZ47A
100L2CZ
10GL2CZ
100L2C
10FL2CZ
10dl2cz
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Untitled
Abstract: No abstract text available
Text: 10 D L2 C48 A, 10 FL2 C48A, U10 D L2 C48 A, U10 FL2 C48A TO SHIBA TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2C48A, 10FL2C48A, U10DL2C48A, U10FL2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. •
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10DL2C48A,
10FL2C48A,
U10DL2C48A,
U10FL2C48A
10FL2C48A
12-10D1A
12-10D2A
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hep silicon diode
Abstract: 36CP D5160
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HEP 2Q(Q F)L2CZ47A Unit in mm SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. 03-2 ± 0 .2 -y~~- • Repetitive Peak Reverse Voltage : V^g^=200, 300V • Average Output Rectified Current : Io=20A
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L2CZ47A
20DL2CZ47A
20FL2CZ47A
20FL2CZI7A)
hep silicon diode
36CP
D5160
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autofocus IC
Abstract: L435 l2402
Text: Selection Guide Peak Wavelength Element Radiant Output Cutoff Frequency nm Material Power*’ (m W ) Emission* 4 Applications (M H z) A rea (mm) 50 ¿ 0 .3 Type Listed No. Page Herm etically Sealed Package LED G aAIAs 1.5 with microball tens) 1.4 830 G aAIAs
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L2792-02
L2792-03
L3989-01
L3989-02
L2791
L2683-01
L2683-02
L1915-01
915-02ol,
autofocus IC
L435
l2402
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FS50H
Abstract: DIODE u5 5dl2c
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED C /n C \l O P /IQ A Ü \U , T / L £ U * t O M U5(D, F)L2C48A O SW ITCHING TYPE POW ER SUPPLY APPLICATION. O CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage : V r r m = 200, 300V
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L2C48A
5DL2C48A,
5FL2C48A
U5DL2C48A,
U5FL2C48A
12-10D1A
12-10D2A
5DL2C48A
U5DL2C48A
FS50H
DIODE u5
5dl2c
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SH marking diode
Abstract: No abstract text available
Text: TO SHIBA U20J L2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE U 20J L2C48A SWITCHING TYPE PO W ER SUPPLY APPLICATION Unit in mm CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage V r RM = 600V • Average Output Rectified Current
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L2C48A
-40-15PORATIO
SH marking diode
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