HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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diode m1l
Abstract: M1L marking MA781
Text: 2SK1606 Schottky Barrier Diodes SBD MA781 Silicon epitaxial planer type Unit : mm 0.28±0.05 1608 type SS-Mini type diode ● Surface mounting, enabling high-density mounting ● Fast t rr (reverse recovery time), optimum for high-frequency rectifi- 1 3
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2SK1606
MA781
diode m1l
M1L marking
MA781
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mmc 4011 E
Abstract: kdt 633 10Q18 photometer BV1010
Text: ‘*,. ?dIL-s-195m/467 25 January 1672 MIUTARY SEIKICONDUCTQR sPECIFICATIDN DEVICE, DIODE, TYPES JAN1N57S5 TW speculation ~Immt8 and 1. AND JANTXlN3703 LS mandatory &s 1.2 P@lcal 1.S ?daxfmum ent specifbxtton dbmfs!simns. covers by all &par tof Defense. See figure
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JAN1N57S5
JANTXlN3703
dIL-s-195m/467
EcOM14ENC3AT
mmc 4011 E
kdt 633
10Q18
photometer
BV1010
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MA3S781
Abstract: MA781
Text: Schottky Barrier Diodes SBD MA3S781 (MA781) Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 1.60 − 0.03 0.80 0.80 0.51 0.51 • Features 1.60 ± 0.1 0.80 ± 0.05 1 + 0.05 • 1608 type diode contained in the (SS-mini) package • Surface mounting, allowing high-density mounting
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MA3S781
MA781)
MA3S781
MA781
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Untitled
Abstract: No abstract text available
Text: ULTRA-BROADBAND DROP-IN REMOVABLE CONNECTORS SPST DIODE SWITCH MODEL SWM-1 1OO-1 0.25-18.0 GHz REFLECTIVE WITH DRIVER GENERAL INFORMATION: The Model SWM-1100-1 SPST PIN Diode switch operates over the full frequency range 0.25-18.0 GHz in a single unit. KDl/Triangle
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SWM-1100-1
M1L-STD-883.
SWM-1100-1
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marking z2p
Abstract: 1N830A
Text: MIL-S- 19500/229 NA VY 29 June 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1NB30AM 1. SCOPE 1.1 Description. - This specification covers the detail requirem ents for a silicon diode lor UHF detector applications and is in accordance with Specification MIL-S-19500, except as otherwise specified herein.
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19500/229fNAVY)
1NB30AM
MIL-S-19500,
MIL-S-19500
MIL-9TD-750
M1L-STD-750
marking z2p
1N830A
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Untitled
Abstract: No abstract text available
Text: 1N914 AVAILABLE IN JAN, JAN TX, AND JA N T X V 1N914 PER M1L-PRF-195D0/11G SWITCHING DIODE HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C Operating Current: 75 mA @ T ^ = + 25°C
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1N914
M1L-PRF-195D0/11G
1N914
IN914
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Scans-0016000
Abstract: No abstract text available
Text: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart
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00D0125
MIL-S-19500/226B
MIL-S-19500/226A
1N3666U)
MIL-S-19500.
-55aC
HIL-S-19500/226B
S961-1161-1)
Scans-0016000
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F192A
Abstract: Video Filters F192A Non-Reflective Ultra-Broadband
Text: Model F I92A Non-Reflective Ultra-Broadband High-Speed SPSF Switch The Model F192A is a high-speed non-reflective PIN diode SPST switch with integrated driver. Operating over the instantaneous frequency range from 0.2 to 18 GHz, it provides a minimum isolation
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F192A
Video Filters
F192A Non-Reflective Ultra-Broadband
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N4376
Abstract: No abstract text available
Text: I- 1 | INCH-POUND | I_ I HII-S-19500/282C 23 June 1992 SUPERSEDING HIL-S-19500/282B Ji 1 ^• 1 0 7 3 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE,‘SILICON, SWITCHING TYPE 1N4376 JAN AND JANTX This specification is approved for use by all Depart
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HIL-S-19500/282C
HIL-S-19500/282B
1N4376
MIL-S-19500.
nIL-S-195uG/2B2C
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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diode IN457
Abstract: JYt marking IC 4011 details 1N457 1N458 1N459 origin semiconductor rectifier
Text: MIL SPECS IC|0Q0D1SS 0 Q QS 2M Q B | / NOTICE OF VALIDATION INCH-POUND MIL-S-19500/193C ER NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458, AND 1N459 Military specification MIL-S-19500/193C(ER), dated 15 September
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MIL-S-19500/193C
1N457,
1N458,
1N459
MIL-S-19500
5961-A371)
diode IN457
JYt marking
IC 4011 details
1N457
1N458
1N459
origin semiconductor rectifier
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.25 watt Zener diode
Abstract: 1N4465 1N4475 1N4474 n448 N449 1N4460 1N4496 1N6485 1N6486
Text: 1N 4460 thru 1N 4496 and 1N 6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JÀ N S Ï 1.5 WATT G LA SS ZEN ER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C.
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1N4460
1N4496
1N6485
1N6491
MIL-S-19500/406.
.25 watt Zener diode
1N4465
1N4475
1N4474
n448
N449
1N6486
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1N6528
Abstract: M25UFG RA641 58A2 1N6535 RA644 11n65 RM109 M50FG RM117
Text: T " 0 3 - 0 9 T ' O S - f t I INCH-PQUND I MI L -S-19500/577 5 Ap r i l 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS This specification is approved for use by all Depart
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MIL-S-19500/577
1N6528
1N6535
MIL-S-19500.
RA642
RA645
RM121
RM131
M60FG
M60UFG
M25UFG
RA641
58A2
RA644
11n65
RM109
M50FG
RM117
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1CHX
Abstract: 7228A bi phase modulator
Text: Series 71, 12 Bit Digital and Series 72 Analog l-Q Vector Modulators Both Series comprise a family of four solidstate PIN diode l-Q Vector Modulators covering the frequency range from 0.5 to 18 GHz in four bands; 0.5 to 2 GHz, 2 to 6 GHz, 4 to 12 GHz and 6 to 18 GHz. See Fig. 1.
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ARES1
Abstract: No abstract text available
Text: HERR IM AC INDUSTRIES INC MbE D • bQOMt.B'i 00Q22SS 0 E M M I I M Merrimac ARE & ARES series7 ELECTRONIC PIN DIODE ATTENUATOR Multi-Octave, Current Control, PC & BNC ARE-1 ARES-1 • 2 to 200 MHz Frequency Range • 0 to 30 dB Attenuation Range The ARE and ARES series are constant impedance
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00Q22SS
MIL-C-39012
ARES1
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Untitled
Abstract: No abstract text available
Text: ] | ^ / 71i = - p r s r = a n n ll J v y ü T r L ^ l S L r n J RECTIFIER, up to 150V,6A,30ns January 7, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com A X IA L LEADED HERMETICALLY SEALED SUPERFAST RECTIFIER DIODE * 1N5807 1N5809 1N5811
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TEL805-498-2111
1N5807
1N5809
1N5811
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MIL-STD-12
Abstract: 1N4500 Krypton-85
Text: MI l - S - I 9 5 0 0 /U 0 3 USAF B J u l y I9 6 8 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE 1N 4500 and TX1N4500 1. SCOPE 1 S1 S c o p e » T h is s p e c i f i c a t i o n c o v e r s t h e d e t a i l r e q u ir e m e n ts f o r s i l i c o n ,
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MIL-S-195CO/U03
1N4500
TX1N4500
MIL-S-19500
MIL-STD-12
Krypton-85
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3N243
Abstract: 3N245TX 3N243R 3N243TX 3N244 3N244R 3N244TX 3N245 3N245R
Text: 0 . OPTEK Product Bulletin 3N243, 3N243TX September 1996 High Reliability Optically Coupled Isolators Types 3N243, 3N244, 3N245, 3N243TX, 3N244TX, 3N245TX Features • TX versions processed to Optek’s military screening program patterned after M1L-PRF-19500
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3N243,
3N243TX
3N244,
3N245,
3N243TX,
3N244TX,
3N245TX
M1L-PRF-19500
page13-4.
3N243
3N245TX
3N243R
3N244
3N244R
3N244TX
3N245
3N245R
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2n6851
Abstract: No abstract text available
Text: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET
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2n6851
MIL-S-19500/564
Param2n6851_
P-37010â
2SM735
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YJ 26
Abstract: 5962-9051501LX
Text: AMD N O T IC E OF R E V ISIO N Form Approved OMB No. 0704-0188 DATE CYYWCO N O R ) (See M1L-STD-480 fo r in s tru c tio n s ) This re v is io n described below has been authorized fo r the document lis te d . 92/03/27 P ublic re p o rtin g burden fo r th is c o lle c tio n is estimated to average 1 hour per response, in c lu d in g the tim e fo r review ing
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M1L-STD-480
Headq962-9051501LX
u51b01XX
AM29C81BA/BLA
AM29C818A/B3A
YJ 26
5962-9051501LX
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to3a
Abstract: 000D1E7 N95 DIODE 1N111 germanium diode 1n69 N70a 1N69A diode 1N62 gold bonded germanium diode
Text: "I 0<S B K C INTERNATIONAL 30E D BKC International Electronics Inc. • 117^03 D00Q3E5 2 ■ ' T ’O l - O '? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 M oldbondeddiodes TYPE 1N60A
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DQDD35S
1N60A
150mA
300nS
to3a
000D1E7
N95 DIODE
1N111
germanium diode
1n69
N70a
1N69A diode
1N62
gold bonded germanium diode
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