diode MARKING CODE jx
Abstract: sot23 marking JR marking mh sot-23 BAS21LT1G sot-23 MARKING CODE JS 88a diode SOT-23 code marking mf
Text: BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 Preferred Devices High Voltage Switching Diode Device Marking: • BAS19LT1 = JP • BAS20LT1 = JR • BAS21LT1 = JS • BAS21DW5T1 = JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE SOT−23 Features 3 1 CATHODE ANODE
|
Original
|
PDF
|
BAS19LT1,
BAS20LT1,
BAS21LT1,
BAS21DW5T1
BAS19LT1
BAS20LT1
BAS21LT1
OT-23
SC-88A
diode MARKING CODE jx
sot23 marking JR
marking mh sot-23
BAS21LT1G
sot-23 MARKING CODE JS
88a diode
SOT-23 code marking mf
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel
|
Original
|
PDF
|
LBAS21HT1G
3000/Tape
LBAS21HT3G
10000/Tape
|
DIODE UF marking code
Abstract: JS marking diode
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE BAS21HT1 1 • Device Marking: JS 1 CATHODE 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 MARKING DIAGRAM ORDERINGINFORMATION Device Package Shipping BAS21HT1 SOD–323 3000/Tape & Reel JS Preferred: devices are recommended choices for future use and best overall value.
|
Original
|
PDF
|
BAS21HT1
3000/Tape
BAS21HT1
DIODE UF marking code
JS marking diode
|
DIODE UF marking code
Abstract: marking code js DIODE JS marking code js sod323 diode marking code js sod323 BAS20HT1
Text: LESHAN RADIO COMPANY, LTD. High Voltage BAS20HT1 Switching Diode 1 • Device Marking: JS 1 CATHODE 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 MARKING DIAGRAM ORDERING INFORMATION Device Package Shipping BAS20HT1 SOD–323 3000/Tape & Reel JS M Preferred: devices are recommended choices for future use and best overall value.
|
Original
|
PDF
|
BAS20HT1
3000/Tape
BAS20HT1
DIODE UF marking code
marking code js
DIODE JS
marking code js sod323 diode
marking code js sod323
|
RD10JS
Abstract: RD11JS RD12JS RD13JS RD15JS RD16JS RD39JS 2JS marking NEC RD4.7JS RD5.1JS
Text: DATA SHEET ZENER DIODES RD4.7JS to RD39JS DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode DESCRIPTION NEC Type RD [ ] JS series are DHD Double Heatsink Diode construction Mini Package (DO-34; Body length 2.4 mm Max.) possessing
|
Original
|
PDF
|
RD39JS
DO-34
DO-34;
RD39JS
RD10JS
RD11JS
RD12JS
RD13JS
RD15JS
RD16JS
2JS marking
NEC RD4.7JS
RD5.1JS
|
BAS19
Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol
|
Original
|
PDF
|
BAS19LT1,
BAS20LT1,
BAS21LT1
BAS19LT1
BAS20LT1
BAS19
BAS20
BAS21
r14525
BAS19
BAS19LT1
BAS20
BAS20LT1
BAS21
BAS21LT1
sot23 marking JR
|
DIODE UF marking code
Abstract: marking code js sod323 diode UF 2004
Text: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol VR VRRM IF IFM surge Rating Value Unit Continuous Reverse Voltage 250 Vdc Repetitive Peak Reverse Voltage 250
|
Original
|
PDF
|
BAS21HT1
OD-323
DIODE UF marking code
marking code js sod323
diode UF 2004
|
Untitled
Abstract: No abstract text available
Text: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current
|
Original
|
PDF
|
BAS21HT1
BAS21HT1
|
Untitled
Abstract: No abstract text available
Text: BAS20HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc Peak Forward Surge Current
|
Original
|
PDF
|
BAS20HT1
BAS20HT1
|
BAS21HT1
Abstract: No abstract text available
Text: BAS21HT1 Preferred Device High Voltage Switching Diode • Device Marking: JS http://onsemi.com HIGH VOLTAGE SWITCHING DIODE MAXIMUM RATINGS Symbol Rating Value Unit VR Continuous Reverse Voltage 250 Vdc IF Peak Forward Current 200 mAdc 625 mAdc Max Unit 200
|
Original
|
PDF
|
BAS21HT1
r14153
BAS21HT1/D
BAS21HT1
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G • We declare that the material of product 1 compliance with RoHS requirements. 2 CASE 477, STYLE 1 SOD– 323 ORDERING INFORMATION Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel LBAS21HT3G
|
Original
|
PDF
|
LBAS21HT1G
LBAS21HT3G
3000/Tape
10000/Tape
195mm
150mm
3000PCS/Reel
8000PCS/Reel
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FETURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G
|
Original
|
PDF
|
LBAS21LT1G
3000/Tape
LBAS21LT3G
10000/Tape
236AB)
OT-23
|
Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS21LT1G FEATURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS21LT1G JS 3000/Tape&Reel LBAS21LT3G
|
Original
|
PDF
|
LBAS21LT1G
3000/Tape
LBAS21LT3G
10000/Tape
OT-23
|
Untitled
Abstract: No abstract text available
Text: GEC PL E SSEY w , S E M I C O N D U C T O R S DS4412-1.2 DSF8035SK FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS 3500V RRM 335A ¡F AV 3500A ' fsm v • Snubber Diode For GTO Applications. 400(iC 4.0|JS Q r FEATURES ■ Double side cooling. ■ High surge capability.
|
OCR Scan
|
PDF
|
DS4412-1
DSF8035SK
DSF8035SK35
03G14S
37bfiSS5
GD3014b
37b6522
|
|
|
BA423L
Abstract: No abstract text available
Text: 5bE D 711002b 00MD117 bT7 M P H I N PHILIPS INTERNATIONAL iI SbE D BA423L T -O T -jS j SILICON AM BAND SWITCHING DIODE FOR SURFACE MOUNTING The BA423L is a switching diode intended fo r band switching in AM radio receivers. This SM diode is a leadless diode in a herm etically sealed SOD-8 O envelope w ith lead/tin plated metal
|
OCR Scan
|
PDF
|
711QflSb
D0MD117
BA423L
BA423L
|
Untitled
Abstract: No abstract text available
Text: ¡Ü H Ü X / N '- I' X „ _ - , lounting Device Surface Mounting . Super F ast Recovery Diode Single Diode OUTLINE DIMENSIONS D2FL40 400V 1.3A •^ Jv ä JS M D • trr5 0 n s ffl Ì É •S R B S •D C / D C Z\y>K.—S> • 7U - r p . 'O b • m m . OA. m m
|
OCR Scan
|
PDF
|
D2FL40
|
ERG75
Abstract: H150 T810 T930 EB4P
Text: ERG75 45A JS S S a fc ^ - f * - K : O u tlin e D r a w in g s FAST RECOVERY DIODE M f t - R • F e a tu re s : t — Pl aner chip • V 7 Y i)1j '<1)— Soft recovery type • Stud mounted : Applications • Switching power supplies Free-wheel diode •
|
OCR Scan
|
PDF
|
ERG75
ERG75
50HzjBÂ
iLfti80\
eBTB30Â
egTS30S3^
I95t/R89)
H150
T810
T930
EB4P
|
Untitled
Abstract: No abstract text available
Text: International ^Rectifier PD-2.456 HFA70NH60R Ultrafast, Soft Recovery Diode HEXFRED” LUG TERMINAL CATHODE Features Vr = 600V l • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters VF = 1.5V Qrr * = 980nC T = 220A/|JS
|
OCR Scan
|
PDF
|
HFA70NH60R
980nC
37066IR
Liguria49
|
smd diode a7
Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
Text: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output
|
OCR Scan
|
PDF
|
DF30PC3M
STO-220
smd diode a7
schottky diode marking A7
diode marking H2
5011s
smd marking 5G
smd marking a7
DF30PC3M
marking A7 diode
SHINDENGEN DIODE
A7 diode smd
|
a548
Abstract: ESC011M-15 T151 T460 T760 T930
Text: E S C 1 1 M - 1 5 5 A IW K ’+ jS I Outline Drawings 5 .5 * ° 3 FAST RECOVERY DIODE 5 .5 * ° 3 <t>3.2 3.5 • f t « : Features • KiftttTv, Dam per diode fo r high d e finition TV and 0.6 high resolution display. •9 —YO>&kit Dam per and m odulater diode are jointed
|
OCR Scan
|
PDF
|
ESC011M-15
19S24^
I95t/R89)
a548
T151
T460
T760
T930
|
D5S4M
Abstract: No abstract text available
Text: 2 /a v h + - K U 7 S W - I * Schottky Barrier Diode Single Diode OUTLINE DIMENSIONS D5S4M 40V 5A >Tjl50°C P rrsm 7 7 V 'J i ffiiE > 7 , llÆ - , lb K > S R S ;H > D C / D C n : y A '- ^ O A H tg I jS f e s Ttt— RATINGS Absolute Maximum Ratings a Storage Temperature
|
OCR Scan
|
PDF
|
Tjl50
J515-5
D5S4M
|
Diode marking TY
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF40PC3 U nit-m m W eight 1 .5 g T y p PyhfLig-(ffl) 10.2 30V 40A Feature • SM D • SM D • î 2 ® V f =0.4V • Ultra-Low V f =0.4V • High lo Rating -Sm all-PKG • iJ 'S = À l;jS î§ M
|
OCR Scan
|
PDF
|
STO-220
DF40PC3
Diode marking TY
|
smd diode SM 97
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30PC3M PyhfLig- ffl U nit-m m W eight 1.5g(Typ) 10.2 30V 30A Feature • SM D • SMD • î 2 ® V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-PKG • iJ 'S = À l; jS î § M
|
OCR Scan
|
PDF
|
STO-220
DF30PC3M
smd diode SM 97
|
B25DC
Abstract: ir e.78996 B25DS E.78996 scr 78996 diode
Text: International HÖR]Rectifier , • 4A55452 0ülbSb3 IT T « I N R INTERNATIONAL RECTIFIER bSE B25DC/DA/DS/CS/JS SCR I SCR and DIODE / SCR Power Modules in B- package Features I Glass passivated junctions fo r greater reliability I E lectrically isolated base plate 3500V RMS
|
OCR Scan
|
PDF
|
4A55452
B25DC/DA/DS/CS/JS
B25DC
554S2
GGlbS70
20ohm
65ohm
B25DC
ir e.78996
B25DS
E.78996 scr
78996 diode
|
