ITT DIODE
Abstract: 8 Position 16 Pin SPST dip switch 1A219001G 1A212001G 1A211001G EECO 2100 1A210001G EECO Switch EECO itt rotary switch 14 positions
Text: CROSS REFERENCE GUIDE EECO SWITCH To ITT/ C & K PRODUCTS EECO Switch A Transico Company 800 854-3808 (714) 835-6000 FAX: (714) 482-9429 Web: www.eecoswitch.com E-Mail: [email protected] Revised 02/22/2005 CROSS - REFERENCE GUIDE EECO SWITCH To ITT/ C &K
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delco
Abstract: 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077
Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Delco Elecs PPC Product 2N1012 Generallnst 2N1013 2N1014 2N1015 Franel Corp PPC Product 2N1015A Franel Corp PPC Product Semitronics 2N1015B Franel Corp PPC Product 2N1015C Elec Trans Gnrl Trans
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2N1012
2N1013
2N1014
2N1015
2N1015A
2N1015B
2N1015C
2N1015D
2N1015E
2N1015F
delco
2n1100 delco
Elcoma
transitron
solitron
2n1036
2N1103
2N1074
2N1076
2N1077
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TB600
Abstract: TB-691-HASD TB-611-HASD TB-622-HARD TB-641-ASD-1 TB-658-HARD TB-682-RD-1 658 ITT
Text: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d
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TB600
TB-658-HARD
TB-682-RD-1
TB-691-HASD
TB600
TB-691-HASD
TB-611-HASD
TB-622-HARD
TB-641-ASD-1
TB-658-HARD
TB-682-RD-1
658 ITT
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ITT CANNON MCE
Abstract: TB600 TB-611-HASD TB-622-HARD TB-641-ASD-1 TB-658-HARD TB-682-RD-1 TB-691-HASD Cannon connectors ITT Cannon
Text: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d
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TB600
TB-658-HARD
TB-682-RD-1
TB-691-HASD
ITT CANNON MCE
TB600
TB-611-HASD
TB-622-HARD
TB-641-ASD-1
TB-658-HARD
TB-682-RD-1
TB-691-HASD
Cannon connectors
ITT Cannon
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Cannon connectors
Abstract: No abstract text available
Text: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d
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TB600
Cannon connectors
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Untitled
Abstract: No abstract text available
Text: CM3202-02 DDR VDDQ and VTT Termination Voltage Regulator Product Description The CM3202−02 is a dual−output low noise linear regulator designed to meet SSTL−2 and SSTL−3 specifications for DDR−SDRAM VDDQ supply and termination voltage VTT supply.
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CM3202-02
CM3202-02/D
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CM3202-02
Abstract: CM3202-02SM CM320 CM3202
Text: PRELIMINARY CM3202-02 DDR VDDQ and VTT Termination Voltage Regulator Features Product Description • The CM3202-02 is a dual-output low noise linear regulator designed to meet SSTL-2 and SSTL-3 specifications for DDR-SDRAM VDDQ supply and termination voltage VTT supply. With integrated power
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CM3202-02
CM3202-02
500mV
CM3202-02SM
CM320
CM3202
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CM320 200DE
Abstract: No abstract text available
Text: CM3202-00 DDR VDDQ and VTT Termination Voltage Regulator Product Description The CM3202−00 is a dual−output low noise linear regulator designed to meet SSTL−2 and SSTL−3 specifications for DDR−SDRAM VDDQ supply and termination voltage VTT supply.
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CM3202-00
CM3202â
CM320 200DE
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200DE
Abstract: CM3202-00DE
Text: CM3202-00 DDR VDDQ and VTT Termination Voltage Regulator Product Description The CM3202−00 is a dual−output low noise linear regulator designed to meet SSTL−2 and SSTL−3 specifications for DDR−SDRAM VDDQ supply and termination voltage VTT supply.
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CM3202-00
CM3202-00/D
200DE
CM3202-00DE
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BB510
Abstract: marking CA ITT DIODE
Text: ITT SEMICON] / INTERMETALL blE D • 4fc.62711 00D3175 TTE « I S I BB510 Tuner Diode Si Epitaxial Planar Capacitance Diode with very high effective capacitance ratio for tuning the whole MW range, especially in car receivers. i — r T tx -ÿ 04 I Id
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0D3175
BB510
O-236
100MHz
BB510
marking CA
ITT DIODE
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Untitled
Abstract: No abstract text available
Text: Transmissive Optoswitch VTL23G2A, 23G3A Slotted Switch — Schmitt Output PRODUCT DESCRIPTION This series of interrupter type transm issive optoswitches combines an infrared em itting diode IRED w ith a TTL compatible, Schm itt output, photo 1C detector in an opaque plastic case with
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VTL23G2A,
23G3A
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BB731
Abstract: E711
Text: ITT SEniCOND/ INTERMETALL blE 3> • 4b02711 00031*51 145 « I S I BB731 Tuner Diode Silicon Epitaxial Planar Capacitance Diodes with very wide effective capacitance variation for tuning the VHF range 41 to 170 MHz in hyperband television tuners. These diodes are available as singles or as matched sets of
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BB731
BB731
E711
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Untitled
Abstract: No abstract text available
Text: Temic CQY36N S e m i c o n d u c t o r s GaAs Infrared Emitting Diode in Miniature T -3/» Package Description C Q Y 3 6 N is a s ta n d a r d G a A s in f r a re d e m itt in g d io d e in a m i n ia t u r e to p v ie w p la s tic p a c k a g e . Its f la t w in d o w p r o v id e s a w id e a p e r t u r e m a k in g it id e a l
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CQY36N
15-Jul-96
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MRD721
Abstract: No abstract text available
Text: MOTOROLA m S E M IC O N D U C T O R TECHNICAL DATA P h o to D e te c to r MRD721 PIN Diode Output . . . d e s ig n e d f o r a p p lic a t io n in la s e r d e te c tio n , lig h t d e m o d u la t io n , d e te c tio n o f v is ib le a n d n e a r in fr a re d lig h t -e m itt in g d io d e s , s h a f t o r p o s it io n e n c o d e r s , s w it c h in g a n d lo g ic
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MRD721
MRD721
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sx3704
Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are
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ircD376
BD234
VT854,
VT855â
VT854*
iTT44,
BZX79-C24,
BZX83-C24,
BZX88-C24
sx3704
BRC157
BRC-116
Germanium Diode aa143
1n4148 ITT
TRANSISTOR BC147
BC107/spice model bf199
BY238
SN76226DN
tungsram
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vaillant
Abstract: Future Electronique ITT Semiconductors SF00500 ITT DIODE 87 BKC Semiconductors F9222 nedis
Text: ITT Semiconductors Sales Offices / Distributors / Agents ITT Semiconductors Distributors / Agents France ITT Semiconductors France 157, rue des Blains F-92220 Bagneux Tel. 1 4 5 4 7 8 1 8 1 Fax (1 )4 5 4 7 8 3 9 2 Australia CRUSADER Electronic Components Pty. Ltd.
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F-92220
F-93230
D-90425
NL-2718
NL-5321
NL-5320
NL-5503
NL-3439
N-1081
vaillant
Future Electronique
ITT Semiconductors
SF00500
ITT DIODE 87
BKC Semiconductors
F9222
nedis
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MW131
Abstract: OPI2100 QPI2100 VDC111 LP323
Text: OPTEK TECHNOLOGY INC QfaE D Optoelectronics Division TRW Electronic Components Group Product Bulletin 5198. January 1985 7 I b ^öSöQ oooosaa | 1987 Cost Saver Product! Call TRW for more information! TRYw -T ' V /- 8 3 Optically Coupled Isolators Type QPI21Q0
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00D0225
0PI21Q0
371X9.
E58730
OPI2100
MW131
QPI2100
VDC111
LP323
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Untitled
Abstract: No abstract text available
Text: BS870 N-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown -i g; Top View ip "gr i! It 9 5 lflS Pin configuration
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BS870
OT-23
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CLI870
Abstract: CLI840 CLI850 CLI860 J25W CL1860 diode 913 IR emitter sensor
Text: CLAIREX ELECTRONICS DIV 11E D • 51457^ T 0000354 3 - H b 7 3 CLI840 CLI850 CLI860 CLI870 Optical Switches ,125 DIA TY fi GENERAL DESCRIPTIONS — T his optical sw itch se ries couples a gallium arsenide infrared em itting diode an d a silicon darlington p h o totransistor, for high sensor
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CLI840
CLI850
CLI860
CLI870
CLI870
100mw,
IF35MA
r-m-13
J25W
CL1860
diode 913
IR emitter sensor
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BC250A
Abstract: No abstract text available
Text: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura
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BC250A
BC250B
BC250C
BC327
BC327-16
BC327-25
BC327-40
BC328
BC328-16
BC328-25
BC250A
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Zener diode 5.6 itt
Abstract: Zener diode itt Zener diode itt 5.6 Zener diode itt 150 V itt diodes 8.2 0SGH33 1N4742A allegro 51
Text: ALLEGRO MICROSYSTEMS INC bbE D • 0S0M338 QQDbS33 460 ■ ALGR ZENER DIODES 1 WATT0, W SERIES, 5.6 V to 51 V ELECTRICAL CHARACTERISTICS at TA = + 25°C, T, < + 175°C, VF = 1.5 V Max. @ IF = 200 mA Surge Max. Zener Impedance Max. Leakage Current Current Device
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0S0M338
QQDbS33
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
Zener diode 5.6 itt
Zener diode itt
Zener diode itt 5.6
Zener diode itt 150 V
itt diodes 8.2
0SGH33
1N4742A
allegro 51
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10D3
Abstract: 1G14 C 337-40
Text: NPN TRANSISTORS ITT SEMICOND/ INTERMET ALL 3ME D • 4böH711 0002443 5 ■ ISI T - 3 i - o \ NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 ='TO-92 . On special request, these transistors will also be produced with TO -18 pin configuration.
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BC170A
BC170B
BC170C
BC337
BC338
BC413B2)
BC413C2)
BC414B2)
BC414C2
BC445
10D3
1G14
C 337-40
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zy 406
Abstract: ITT ZY 12 ITT ZY 6.8 itt zy 8.2 ZMY itt Zener diode 5.6 itt Zener diode itt ITT zmy15 itt zf 12 zener ITT ZENER
Text: ITT S E M I C O N D / INTERMETALL blE » • Ubfl2711 Q G Q 3 2 S 3 SÔS « I S I ZMY1 . . .ZM Y 100 1W Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international
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Ubfl2711
00Q3553
ZMY100
DO-41
ZPY100.
4bfl2711
zy 406
ITT ZY 12
ITT ZY 6.8
itt zy 8.2
ZMY itt
Zener diode 5.6 itt
Zener diode itt
ITT zmy15
itt zf 12 zener
ITT ZENER
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itt zf 12 zener
Abstract: ITT ZPY Zener diode 5.6 itt Zener diode ZPY 16 ITT Zener diode ZPY 15 itt Zener diode ITT zf 2.7 zpy 12 itt itt zpy 22 ITT ZPY 5.1 zpy15 ITT
Text: ITT SEMICOND/ INTERNETALL 50E T> • MbôE?!! DOüE'îlB GIS « I S I 'T - U - lS ' ZPY1 . ZPY100 1.3 W Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international
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ZPY100
ML8E71L
QGECI13
ZMY100.
DO-41
itt zf 12 zener
ITT ZPY
Zener diode 5.6 itt
Zener diode ZPY 16 ITT
Zener diode ZPY 15 itt
Zener diode ITT zf 2.7
zpy 12 itt
itt zpy 22
ITT ZPY 5.1
zpy15 ITT
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