diode IN 5062
Abstract: in 5062 silicon rectifier diode
Text: 1N 5059.1N 5062 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter -2 Axial lead diode Standard silicon rectifier diodes 1N 5059.1N 5062 Forward Current: 2 A
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HALL SENSOR 2pin
Abstract: Allegro Hall-Effect ICs dout2 1812 footprint hall effect sensor MAX9621 A1140EUA-T C2012X7R2A104K C4532X7R2A225K CMHD4448
Text: 19-5062; Rev 0; 11/09 MAX9621 Evaluation Kit The MAX9621 evaluation kit EV kit is a fully assembled and tested circuit board that demonstrates the MAX9621 dual, 2-wire Hall-effect sensor interface with analog and digital outputs in a 10-pin FMAXM surface-mount
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MAX9621
MAX9621
10-pin
HALL SENSOR 2pin
Allegro Hall-Effect ICs
dout2
1812 footprint
hall effect sensor
A1140EUA-T
C2012X7R2A104K
C4532X7R2A225K
CMHD4448
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Untitled
Abstract: No abstract text available
Text: 1N 5059.1N 5062 -2 Axial lead diode Standard silicon rectifier diodes 1N 5059.1N 5062 Forward Current: 2 A Reverse Voltage: 200 to 800 V !"#$ Mechanical Data %&$' %&$"* + , " , -
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1n 5062 silicon rectifier diode
Abstract: No abstract text available
Text: 1N 5059.1N 5062 -2 Axial lead diode Standard silicon rectifier diodes 1N 5059.1N 5062 Forward Current: 2 A Reverse Voltage: 200 to 800 V !"#$ Mechanical Data %&$' %&$"* + , " , -
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in 5062 silicon rectifier diode
Abstract: diode IN 5062 in 5062 5062 1n 5062 silicon rectifier diode
Text: 1N 5059.1N 5062 -2 Axial lead diode Standard silicon rectifier diodes 1N 5059.1N 5062 Forward Current: 2 A Reverse Voltage: 200 to 800 V !"#$ Mechanical Data %&$' %&$"* + , " , -
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Zener Diode 3v 400mW
Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –
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DS750
87C750
80C51
PZ3032-12A44
BUK101-50GS
BUW12AF
BU2520AF
16kHz
BY328
Zener Diode 3v 400mW
transistor bc548b
BC107 transistor
TRANSISTOR bc108
bc547 cross reference chart
Transistor BC109
DIAC OB3
DIAC Br100
74HCT IC family spec
TRANSISTOR mosfet BF998
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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DPG60I400HA
Abstract: DPG 30 I 400 HA DPG60I4
Text: DPG 60 I 400 HA advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 I 400 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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O-247
60747and
DPG60I400HA
DPG 30 I 400 HA
DPG60I4
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Untitled
Abstract: No abstract text available
Text: DPG 60 I 400 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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DPG60IM400QB
Abstract: DPG60I400HA
Text: DPG 60 I 400 HA V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns Part number DPG 60 I 400 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG60IM400QB
DPG60I400HA
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Untitled
Abstract: No abstract text available
Text: DPH 30 IS 600 HI V RRM = I FAV = t rr = HiPerDynFRED² High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 600 V 30 A 35 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips
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marking 06AT
Abstract: DHG60I600HA
Text: DPH 30 IS 600 HI V RRM = I FAV = t rr = HiPerDynFRED² High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 600 V 30 A 35 ns 3 DPH 30 IS 600 HI Backside: isolated Features / Advantages: Applications: Package:
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marking 06AT
DHG60I600HA
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DPG60C200HB
Abstract: No abstract text available
Text: DPG 60 C 200 HB V RRM = 200 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 200 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG60C300QB
60747and
DPG60C200HB
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DPG60C200HB
Abstract: DPG60C200QB
Text: DPG 60 C 200 HB V RRM = 200 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DPG60C200QB
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DPG60C200HB
Abstract: DPG60C200QB dpf60c200 marking code HB marking HB diode ISOPLUS247 DPG60C200
Text: DPG 60 C 200 HB V RRM = 200 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 200 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DPG60C200HB
DPG60C200QB
dpf60c200
marking code HB
marking HB diode
ISOPLUS247
DPG60C200
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Untitled
Abstract: No abstract text available
Text: DPG60I400HA HiPerFRED² VRRM = 400 V I FAV = 60 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG60I400HA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips
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O-247
60747and
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DPG60C200HB
Abstract: DPG60C200QB
Text: DPG60C200HB HiPerFRED² VRRM = 200 V I FAV = 2x 30 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips
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DPG60C200HB
O-247
60747and
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DPG60C200QB
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smd TRANSISTOR sot-23 a7
Abstract: 07N60 200w power amplifier PCB layout 230 AC to 5V smps ic 3525 bc817 optocoupler TDA 6275 TDA 200W 07n60 mosfet circuit diagrams TDA 4100 tda168886
Text: Version 1.0 , September 2004 Application Note AN-CoolMOS-09 200W SMPS Demonstration Board II Author: Marko Scherf, Wolfgang Frank Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board II
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AN-CoolMOS-09
TDA16888,
1X20/90I
smd TRANSISTOR sot-23 a7
07N60
200w power amplifier PCB layout
230 AC to 5V smps ic 3525
bc817 optocoupler
TDA 6275
TDA 200W
07n60 mosfet circuit diagrams
TDA 4100
tda168886
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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Untitled
Abstract: No abstract text available
Text: IN 5059.IN 5062 Silizium Gleichrichter Silicon Rectifier 2A Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 200.800 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0
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UL94V-0
G0174
000017S
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C 5021 F-R
Abstract: diode IN 5062 G-5071
Text: SIEMENS CMPNTS t OPTO SIEM ENS 44E D • flE3k3Eb 0004=136 T « S I E X LDR 5001/5002/5003 HIGH EFFICIENCY RED LDH 5021/5022/5023 HIGH EFFICIENCY YELLOW LDY 5061/5062 HIGH EFFICIENCY GREEN LDG 5071/5072 RED LED Lamps T13/4 LED LAMP LDY 506X LDG 507X • High Light Output
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T13/4
C 5021 F-R
diode IN 5062
G-5071
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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DIODE in 5060
Abstract: KSD5072
Text: TRANSISTORS FUNCTION GUIDE 2-4. Horizontal Defelection Output Transistors 2.4.1 TO-3P F Type Transistors VcBO VcEO lc hcc Device Switching Time VrctsatW) •c (A) MIN lc (A) Ib (A) ton t$lg 0‘S) MAX 0<S) MAX Pc tt (mS) MAX (W) Comment (V) (V) (A) (NPN)
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KSD5070
KSD5071
KSD5072
KSD5074
KSD5075
KSD5076
DIODE in 5060
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transistor BD 512
Abstract: transistor kt 801 transistor kt Diode KD 202 junost 603 kt801b GT 404 GT313B MP 41 transistor MP42A
Text: Mau« Import - Geräte Bewdetisoher s/w-gernsehkofferempfänKor " J ü M 0 S T 603 Hit dam Import dos linksseitig skizzier ten Fernsehportable aus dsr Sowjetunion vird die s.Z. in dieser Geräteklasse be stehende liarktlüoke geschlossen. Das Gerät ist für den Bmpfang aller Fern
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12-VAkku
/50Hz
III/18/379
transistor BD 512
transistor kt 801
transistor kt
Diode KD 202
junost 603
kt801b
GT 404
GT313B
MP 41 transistor
MP42A
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