semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
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DD1200S33KL2C
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M8 3F
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
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DD1200S33KL2C
M8 3F
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
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DD1200S33KL2C
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DD1200S33KL2C_B5 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values # $ % 0+ $ &' *+ &' ( )*+ $ 1 # % 6 27 5(" 1
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DD1200S33KL2C
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FS30R06W1E3
Abstract: qsq100
Text: Technische Information / technical information FS30R06W1E3 IGBT-Module IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC * +
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FS30R06W1E3
FS30R06W1E3
qsq100
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FF100R12MT4
Abstract: No abstract text available
Text: Technische Information / technical information FF100R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoDUAL™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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FF100R12MT4
FF100R12MT4
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Untitled
Abstract: No abstract text available
Text: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A Wide zener voltage range selection : 2.0V to 75V Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZT52C2V0K
BZT52C75K
200mW
OD-523F
OD-523F
MIL-STD-202,
60-cycle
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MARKING CODE f5
Abstract: diode marking code h6 marking code f4 DIODE Zener diode MARKING H5 CMOZ3V0 CMOZ5V1 Zener diode h5 zener diode f7 diode marking 714 CMOZ11V
Text: Central CMOZ2V4 THRU CMOZ43V TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™
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CMOZ43V
OD-523
CMOZ20V
CMOZ22V
CMOZ24V
CMOZ27V
CMOZ30V
CMOZ33V
CMOZ36V
CMOZ39V
MARKING CODE f5
diode marking code h6
marking code f4 DIODE
Zener diode MARKING H5
CMOZ3V0
CMOZ5V1
Zener diode h5
zener diode f7
diode marking 714
CMOZ11V
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H8 SOT-23
Abstract: marking H8 SOT-23 MMBV609LT1 marking AM sot-23 marking SH SOT23
Text: MOTOROLA SEMICONDUCTOR @ TECHNICAL SiIicon~ning Order this document by MMBV609LT1/D DATA Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–th~line application requiring back–to–back diode configuration for minimum
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MMBV609LT1/D
OW1-2447
2W609
MMBV609LTl~
H8 SOT-23
marking H8 SOT-23
MMBV609LT1
marking AM sot-23
marking SH SOT23
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TPC6D03
Abstract: No abstract text available
Text: TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications • Unit: mm A PNP transistor and a Schottky barrier diode are mounted on a compact and slim package.
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TPC6D03
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marking code 153 DIODE sod 23
Abstract: diode ZENER A8 zener diode n8 X8 diode zener X8 zener ZENER diode Y8 BZT52C2V0K ZENER MARKING C8
Text: BZT52C2V0K~BZT52C75K 200mW,Surface Mount Zener Diode Small Signal Diode SOD-523F B C Features A Wide zener voltage range selection : 2.0V to 75V Surface device type mounting Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZT52C2V0K
BZT52C75K
200mW
OD-523F
OD-523F
MIL-STD-202,
soldering60
marking code 153 DIODE sod 23
diode ZENER A8
zener diode n8
X8 diode zener
X8 zener
ZENER diode Y8
ZENER MARKING C8
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TPC6D03
Abstract: No abstract text available
Text: TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications • Unit: mm A PNP transistor and a Schottky barrier diode are mounted on a compact and slim package.
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TPC6D03
TPC6D03
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TPC6D03
Abstract: No abstract text available
Text: TPC6D03 TOSHIBA Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode TPC6D03 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • A PNP transistor and a Schottky barrier diode are housed on a compact and slim package.
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TPC6D03
TPC6D03
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BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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h8 diode zener
Abstract: diode marking code h6 cmoz18v diode J2 marking code CMOZ12V marking J4 diode DIODE MARKING CODE H7
Text: Central CMOZ2V4 THRU CMOZ43V TM Semiconductor Corp. SURFACE MOUNT ULTRAmini SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini™
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CMOZ43V
250mW,
OD-523
CMOZ15V
CMOZ16V
CMOZ18V
CMOZ20V
CMOZ22V
CMOZ24V
CMOZ27V
h8 diode zener
diode marking code h6
diode J2 marking code
CMOZ12V
marking J4 diode
DIODE MARKING CODE H7
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electrostatic precipitator
Abstract: SHELL DIALA D H850
Text: MICROSEMI CORP/ MICRO 5bE » • bllSTG? OGDlMTa 132 ■ PIÛL M IC R 0 Q U A L IT Y / SEMICONDUCTOR, INC Fast Recovery High Voltage Power Rectifier Subassembly Diode H850 The H850 subassembly diode is designed for use in the buildup of high voltage power rectifier assemblies. Total
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-100mA
electrostatic precipitator
SHELL DIALA D
H850
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6hx ic
Abstract: nichicon lf HD4s
Text: HYBRID I.C.s “Hi-Net” n ic liic o n Diode Arrays H High-speed switching diode arrays and high voltage-withstand diode arrays are of NICHICON's standard series. They are combined to be conveniently used for both binary and decimal systems. High-speed series is ideal for computer peripherals, control boards and general
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ZHMA2902
ZHMA2911
ZHMA2912
ZHMA2913
ZHMA2914
6hx ic
nichicon lf
HD4s
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PS-4512 diode
Abstract: T 4512 H diode ps 4512 diode diode T 4512 H
Text: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-Module D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor modules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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O-240
65------------r
PS-4512 diode
T 4512 H diode
ps 4512 diode
diode T 4512 H
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Untitled
Abstract: No abstract text available
Text: MICRO jaUALITY / S E M IC O N D U C T O R , INC. Fast Recovery High Voltage Power Rectifier Subassembly Diode H850 Th e H 8 5 0 subassem bly diode is designed for use in the buildup of high voltage power rectifier assem blies. Total assem bly cost is greatly reduced by the use of diodes with
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T 3512 H diode
Abstract: ASEA fast thyristor ASEA thyristor diode T 3512 H ABB thyristor modules E 72873 ASEA abb diode ABB thyristor 5 TO 48 THYRISTOR FAST SWITCHING ABB Thyristor asea
Text: A S E A B R O üJN/ABB A3 S E t l IC O N Schnelle Thyristor-M odule D | DD4Ö3DÖ □□ □ □ m T | ~ D T ~ 2, Ç - o Fast switching thyristor m odules Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor
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MSS45-08
MSS45-09
O-240
T 3512 H diode
ASEA fast thyristor
ASEA thyristor
diode T 3512 H
ABB thyristor modules
E 72873
ASEA abb diode
ABB thyristor 5
TO 48 THYRISTOR FAST SWITCHING
ABB Thyristor asea
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.120-80 uns
Abstract: 280/buss 2A
Text: Johanson Phasa-Trim# Adjustable Microwave Diode Holders 3 l©T^p description Johanson Microwave Diode Holders are an efficient and inexpensive means of securing and tuning microwave diodes into precise attitudes for optimum circuit performance. The self
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H6951
FAX-201-334-2954
.120-80 uns
280/buss 2A
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Untitled
Abstract: No abstract text available
Text: U-UTs^ ^ t- K Super F ast Recovery Diode Single Diode OUTLINE DIMENSIONS D8L60 Case : ITO-220 600V 8A • B B Œ • tr r 7 0 n s • 7 J l/ E - J b K •PFC •SRB • 7 U -7 t w ju • T V + B , H8Œ • Ë fë ü RATINGS • ÎÊ J 'f J t ^ S È f ë
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D8L60
ITO-220
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