ZENER 6.2V DO-214AC
Abstract: No abstract text available
Text: SML4728 thru SML4763A Surface Mount Zener Diode Zener Voltage – 3.3 to 91.0 Volts Steady State Power – 1.0 Watt DO-214AC ed e d n Exte e Rang g a t l Vo 0.065 1.65 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152)
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SML4728
SML4763A
DO-214AC
25ALS
ZENER 6.2V DO-214AC
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Untitled
Abstract: No abstract text available
Text: F E AT U R E S MODEL NO. DS0612 K C TO PIN Diode SP 2T S SP2T ED 2 0 - 2 00 0 MHz Low Cost TTL Driver Non-Reflective 14 Pin DIP "0" CONTROL GND 13 14 .87 GND 12 RF COM 11 GND 10 N/C 9 +5V 8 6 GND 7 RF2 • PART IDENTIFICATION .20 .22 • .300 .018 ±.002 DIA
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DS0612
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Untitled
Abstract: No abstract text available
Text: AD VANC ED P o w er Te c h n o lo g y APT2X30D60J 600V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS • Anti-Parallel Diode •Switchmode Power Supply •Inverters • Free Wheeling Diode -Motor Controllers
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APT2X30D60J
OT-227
OT-227
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RK105
Abstract: No abstract text available
Text: Bulletin 127133 rev. D 09/97 International IQ R Rectifier IRK.105 SERIES THYRISTOR/ DIODE and NEW ADD-A-pak Power Modules THYRISTOR/ THYRISTOR Features • Electrically isolated: DBC base plate ■ ■ 3500 VRMg isolating voltage Standard J ED EC package
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ULE78996
RK105
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PDF
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Untitled
Abstract: No abstract text available
Text: A d v a n c ed P o w er Tec h n o lo g y • APT2X100D60J 600V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT2X100D60J
OT-227
OT-227
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP11 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G P 1 1 N 6 0 ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 11 A @ 90°C
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MGP11
N60ED/D
MGP11N60ED/D
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . SG40TC12M o u tlin e Package ! FT 0220G Unit : mm Weight 1.54g Typ nyHB-ë-(M ) 120V 40A 4.5 Feature > T j= 1 7 5 °C ' T j= 17 5°C >3 7 JL Æ -JL / K ' Full M o ld ed • Î Ë I r =60| j A 1 L o w Ir =60| j A
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0220G
SG40TC12M
50IIz
J533-1
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rover
Abstract: J1000
Text: SPEb^fo. / ED-Q2Û78 , x . ISSUE Maiçh;i8,20Q2 SHARP OPTOELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR INFRARED EMITTING DIODE MODEL No. G L 100M N 0M P1M Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.
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ED-Q2078
GL100MN0MP1M
GL100MN0MP1M
rover
J1000
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PDF
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Untitled
Abstract: No abstract text available
Text: eVERJLIGHT EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet Light Emitting Diode 5 m m R ound L ED ,T -1 3/4 7343-2UBGC/C505 Features • Popular T-l 3/4 diameter package. • Choice of various viewing angles. • Available on tape and reel. • Reliable and robust.
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7343-2UBGC/C505
DLE-734-015
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MBD702
Abstract: MBD502
Text: MBD502 silicon MBD702 HIG H-VOLTAG E SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES SILICON HOT-CARRIER DIODE (SCHOTTKY BARRIER DIODE) 5 0 -7 0 V O L T S . . . d esig n ed p r im a rily fo r h ig h -e ffic ie n c y U H F an d V H F d e te c to r a p p lic a tio n s.
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MBD502
MBD702
MountinD502,
MBD702
MBD502
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condensateur
Abstract: No abstract text available
Text: diode biplaque [¿tsLVU g Y' 3 0 È R ed resseu r C A R A C T E R IST IQ U E S G E N E R A L E S C athode à chauffage in d irect T en sio n filam ent . Vf C ourant filam ent . If
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T12-14
condensateur
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LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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4101B
MII-H-38534
LG direct drive motor
600v 20 amp mosfet
transistor tl
11C mosfet
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stetron
Abstract: No abstract text available
Text: V A R IS TO R ^^v , , .' , '’ -V y * ; $ h \ } T •'•'•. ' ■ ■ ?‘- - * ■ . . ■ % Diffused Junction Silicon Types and Sili.çon Carbide Types D IFFU S ED J U N C T IO N S ILIC O N VA R IS TO R S STETRON diffused junction Silicon varistors are special diode
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VT60D\SICVAR
SDL-080-131
SDL-098-231
100mA:
stetron
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PDF
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Untitled
Abstract: No abstract text available
Text: OPTO DIODE CORP SSE D • bflOmfl OODDOTM 13T ■ O P D ^ d / / ' - f j > HIGH TEMPERATURE GaAIAs IR EMITTERS OD-88OLHT FEATURES • E xten d ed operating tem perature ran ge • High reliability eutectic preform die attach • No internal co atin gs • 10 0 % test for minimum p o w er requirem ent
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OD-88OLHT
OD-88O-C
OD-88OLHT
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Untitled
Abstract: No abstract text available
Text: CRO MI32TA IN FR A R ED E M IT T IN G D IO D E 02.94 D ESC R IPTIO N MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. • • • ABSOLUTE M A X IM U M R A TIN G S Ail dimension in mm inch No Scale Toi. : +/-0.3mm Forward Current (Continuous)
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MI32TA
MI32TA
100mA
180mW
MI32T/
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1N 3000 DIODE
Abstract: 14R7 Scans-0017298 general electric
Text: 14R7 14R.7 PAGE I Description and Rating DUPLEX-DIODE PENTODE GENERAL DESCRIPTION Pr i n c i p a l Application: semi-remote-cutoff combined fi er detector, The I4R7 pentode for us e as a automatic-voIume-controI and audio amplifier. a l s o be us ed as a r a d i o - f r e q u e n c y or i n t e r m ed ia te f r e q u e n c y a m p l i f i e r . Th e tube fe at ur es low co upling
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ET-T745
1N 3000 DIODE
14R7
Scans-0017298
general electric
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DIODE REDRESSEMENT
Abstract: 35w4
Text: H U I2 ^ DIODE MONOPLAQUE BBLVU U f A R ed resseu r C A R A C T E R IS T IQ U E S G E N E R A L E S C athode à chauffage indirect A lim entation du filam ent en s é rie s a n s lampe de cadran 35 7,5 150 a v e c lam pe de cadran 32 V 5,5 V 150 mA A 19-4
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A19-4
DIODE REDRESSEMENT
35w4
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bandfilter
Abstract: diods detector diode bandfilter VP
Text: KAB 1 EABi T r ip le J io d e T h e trip le diode E A B I max32 consists o f th re e diodes 6V^ a rra n g e d a b o u t a com m on, h o rizo n tally m o u n te d , c a th o d e , h a v in g b e en especi a lly develo p ed fo r 3-diode circu its. T he o b je c t o f th is
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6293 tube
Abstract: 12DS7 6293 Scans-0017276
Text: I2DS7 TUNßSOl TWIN DIODE-TETRODE MINIATURE 2.“ UN IP O T E N T I A L 8 MAX. TYPE CATHODE HEATER 2¿ 8 12.6 VOLTS MAX. T-6Ì 0.4 AMR AC OR DC 2 5 8 ANY M O U N T I N G POSITION Ï Ï W GLASS SPACE BULB CHARGE GRID TETRODE BOTTOM B ASING VIEW DIAGRAM d ED EC
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12DS7
6293 tube
6293
Scans-0017276
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PDF
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C50AX6G
Abstract: 350VOLTS
Text: TENTATIVE DATA C50 a x 6 g 6 A X 6 G TUMGSOL DOUBLE DIODE COATED UN I POTENTIAL CATHODE HEATER 6 .3 VOLTS 2 .5 AMP. AC OR DC ANY MOUNTING POSITION BOTTOM VIEW ME DI U M S H E L L 7 P IN OCTAL THE 6 a x 6G IS A FU LL-W AVE HIGH VACUUM R E C T I F IE R D ESIG N ED FOR DAMPER
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C50AX6G
M8-210
350VOLTS
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PDF
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"Phase Discriminator"
Abstract: unit water heater ratio Detector
Text: 5726/6AL5W/6097 PREMIUM TUBE TUNO-SOL TWIN DIODE M I N I A TU RE TYPE V COAT ED UNI POT EN T IA L CAT HOD E max ' HEATER >S| 1'2 T-5* MAX. 3" 1|-4 _L MAX. 0.3 0 AMP. 6.3 VO LT S AC OR DC W" ANY M O U N T I N G POS TION GLASS BULB MI NI AT UR E BUTTON 7 PIN BA SE
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5726/6AL5W/6097
5726/6AL5W/6097
"Phase Discriminator"
unit water heater
ratio Detector
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PDF
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FMMD914
Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Text: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film
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OT-23
C9/C20
50MHz
ZC830A
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
FMMD914
FMMD6050
Z6 DIODE
FMMD
marking Z1 sot
ZC830B
BAL99
BAR99
sot-23 MARKING CODE A4
BAV70
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PDF
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6DM4
Abstract: EI 38-12 000D 30-FRAME rs tube RECTIFIER DIODE 5000A
Text: 6DM4 TUMO-SOL \ DIODE . 1.188 MAX UN I P O T E N T I A L CAT HOD E FOR DA M P E R S E R V I C E T E L E V IS IO N IN R E C E IV E R S 3 . 250 “ T -9 MAX 3.812 MAX ANY M O U N T IN G P O S I T I O N w 80TT0M BASING 0 ED EC GLASS SHORT ICG BULB INTERMEDIATE
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12DM4
17DM4.
RS-239
525-LINE,
30-FRAME
6DM4
EI 38-12
000D
rs tube
RECTIFIER DIODE 5000A
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PDF
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3N161
Abstract: topography
Text: OMÜ^IIIL 3N161 Diode Protected P-Channel Enhancem ent Mode M O S FET G E N E R A L D E SC R IP T IO N PIN CONFIGURATION D IO D E-P R O TEC T ED E N H A N C EM EN T -T Y P E M E T A L -O X ID E -SE M IC O N D U C T O R T R A N S IS T O R TO-72 For applications requiring very high input impedance, such
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3N161
3N161
topography
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