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    DIODE DB2 Search Results

    DIODE DB2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE DB2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LDTC0520

    Abstract: WTC3243 PLD10K-CH WLD3343 cables WHY5690 PLD-10 laser diode driver 200 mhz Quantum cascade laser PID1500
    Text: Quantum Cascade & Laser Diode Drivers & Temperature Controllers TEMPERATURE CONTROL DUAL LASER DRIVER QCL MODEL NUMBER QCL Series Quantum Cascade Laser Drivers Chassis Mount PLD-CH Series Laser Diode Drivers PLD PCB Series Laser Diode Drivers WLD3343 Series Laser Diode Drivers &


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    PDF WLD3343 WLD3393 14-Pin FL500 FL593 LDTCxx20 WTC3243 WTC3293 WHY5640 LDTC0520 PLD10K-CH cables WHY5690 PLD-10 laser diode driver 200 mhz Quantum cascade laser PID1500

    DB2F150N6S

    Abstract: No abstract text available
    Text: DB2F150N/P6S May. 2009 Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optim ized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters,


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    PDF DB2F150N/P6S DB2F150N6S

    DB2F200N6S

    Abstract: DB2F200P6S DB2F200N6 DB2F200N Cathode Anode Breakdown Voltage
    Text: DB2F200N/P6S May. 2009 Ultra-Fast Soft Recovery Diode Module Description Equivalent Circuit and Package Ultra-FRD module devices are optim ized to reduce losses and EMI/RFI in high frequency power conditioning electrical systems. These diode modules are ideally suited for power converters,


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    PDF DB2F200N/P6S DB2F200N6S DB2F200P6S DB2F200N6 DB2F200N Cathode Anode Breakdown Voltage

    semiconductor

    Abstract: hirect H507CH Hirect diode H400TB
    Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SDB310WAF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    PDF SDB310WAF OT-23F 25-AUG-10 KSD-D5C040-001

    Untitled

    Abstract: No abstract text available
    Text: SDB310WA SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    PDF SDB310WA OT-23 25-AUG-10 KSD-D5C036-001

    SDB310WAUF

    Abstract: No abstract text available
    Text: SDB310WAUF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    PDF SDB310WAUF OT-323F 25-AUG-10 KSD-D5D018-001 SDB310WAUF

    Untitled

    Abstract: No abstract text available
    Text: SDB310WAUF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    PDF SDB310WAUF OT-323F 25-AUG-10 KSD-D5D018-001

    marking db2 sot23

    Abstract: SDB310WA
    Text: SDB310WA SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    PDF SDB310WA OT-23 25-AUG-10 KSD-D5C036-001 marking db2 sot23 SDB310WA

    SDB310WKF

    Abstract: No abstract text available
    Text: SDB310WKF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    PDF SDB310WKF OT-23F 25-AUG-10 KSD-D5C041-001 SDB310WKF

    Untitled

    Abstract: No abstract text available
    Text: SDB310WK SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    PDF SDB310WK OT-23 25-AUG-10 KSD-D5C037-001

    Untitled

    Abstract: No abstract text available
    Text: SDB310WKF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    PDF SDB310WKF OT-23F 25-AUG-10 KSD-D5C041-001

    SDB310WK

    Abstract: marking db8 sot23
    Text: SDB310WK SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    PDF SDB310WK OT-23 25-AUG-10 KSD-D5C037-001 SDB310WK marking db8 sot23

    SDB310WAF

    Abstract: marking db2
    Text: SDB310WAF SCHOTTKY BARRIER DIODE General Purpose Schottky Barrier Diode General Description These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conductions. Miniature


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    PDF SDB310WAF OT-23F 25-AUG-10 KSD-D5C040-001 SDB310WAF marking db2

    Untitled

    Abstract: No abstract text available
    Text: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance


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    PDF VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance


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    PDF VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-ETL015Y120H www.vishay.com Vishay Semiconductors EMIPAK-2B PressFit Power Module Double Interleaved Boost Converter, 15 A FEATURES • Trench IGBT technology • HEXFRED clamping diode technology • Rectifier bypass diode • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance


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    PDF VS-ETL015Y120H E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    OTS-16 28 0.635-02

    Abstract: connector DB25 Enplas ots-16 OTS-16 2N3904 equivalent db25 socket Transistor sot-23 pin map 2N3904 BAT54 HLMP-K150
    Text: N LM84 8-bit Remote Diode Temperature Sensor Evaluation Kit Manual 1.0 General Description The LM84 Evaluation Kit allows quick connection and evaluation of the LM84 8-bit Remote Diode Temperature Sensor integrated circuit. The Evaluation Board connects to and derives all of it’s power from


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    PDF P-K150 BAT54 OTS-16 28 0.635-02 connector DB25 Enplas ots-16 OTS-16 2N3904 equivalent db25 socket Transistor sot-23 pin map 2N3904 BAT54 HLMP-K150

    marking db2

    Abstract: SDB310WA SDB310WAF ir 2901 ksd2069
    Text: SDB310WAF Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310WA DB2 Package Code SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC


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    PDF SDB310WAF SDB310WA OT-23F KSD-2069-000 marking db2 SDB310WA SDB310WAF ir 2901 ksd2069

    Untitled

    Abstract: No abstract text available
    Text: DB2S316 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DB2S316 Product type: Schottky Barrier Diode Parameters *DEVICE=DB2S316,D * DB2S316 D model *$ .MODEL DB2S316 D + IS=477.23E-9 + N=1.0 + RS=1.6470 + IKF=1.9141 + CJO=8.4129E-12


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    PDF DB2S316 DB2S316 23E-9 4129E-12 90E-9 00E-6 40000E-9

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12625 Revision. 3 Product Standards Schottky Barrier Diode DB2X20600L DB2X20600L Silicon epitaxial planar type Unit: mm For high frequency rectification DB3X206K in Mini2 type package 1.6 0.13 2 • Features 2.6 3.5  Low forward voltage VF


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    PDF TT4-EA-12625 DB2X20600L DB3X206K UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14319 Revision. 3 Product Standards Schottky Barrier Diode DB2G41000L DB2G41000L Silicon epitaxial planar type Unit: mm 0.6 For rectification 1.0 2  Low forward voltage VF  Forward current Average IF(AV) = 1 A rectification is possible


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    PDF TT4-EA-14319 DB2G41000L

    diode 31 DQ 05

    Abstract: No abstract text available
    Text: DIGITALLY CONTROLLED, 360-DEG. PIN DIODE P H A S E SH IFTER S E R IE S DQ GENERAL INFORMATION: KDI/Triangle's Series DQ digitally controlled PIN-diode phase shifters vary the phase of a micro­ wave signal in response to a TTL-compatible logic input signal.


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    PDF 360-DEG. 0-to-360-deg. DB-25P diode 31 DQ 05

    Triangle Microwave phase shifter

    Abstract: AQ-81 phase shifter AQ24 Triangle Microwave AQ-42 triangle KDI
    Text: VOLTAGE CONTROLLED, 360-DEG. SERIES AQ PIN DIODE PHASE SHIFTER GENERAL INFORMATION: KDI/Triarigle’s Series AQ, 0-to360-deg. analog PIN-diode phase shifters vary the phase of a microwave signal by varying a DC voltage. The Series AQ is very fast, and provides low amplitude ripple and excellent


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    PDF 360-DEG. 0-to360-deg. DB-25P Triangle Microwave phase shifter AQ-81 phase shifter AQ24 Triangle Microwave AQ-42 triangle KDI