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    DIODE D3S Search Results

    DIODE D3S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE D3S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d3s4m diode

    Abstract: d3s4m
    Text: D3S4M SCHOTTKY BARRIER RECTIFIER DIODE PRV : 40 Volts IO : 3 Ampere DO-201AD FEATURES : * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop 1.00 25.4 MIN. 0.21 (5.33)


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    PDF DO-201AD DO-41 UL94V-O MIL-STD-202, d3s4m diode d3s4m

    D3SBA60

    Abstract: D3SBA60 equivalent CIRCUIT D3SBA60 marking 77 diode
    Text: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D3SBA60 Unit : mm Weight : 3.9g (typ.) Package:3S 600V 4A 管理番号(例) Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • UL E142422


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    PDF D3SBA60 E142422 D3SBA60 25unless J534-1 D3SBA60 equivalent CIRCUIT D3SBA60 marking 77 diode

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    Abstract: No abstract text available
    Text: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D3SBA60 Unit : mm Weight : 3.9g (typ.) Package:3S 600V 4A 管理番号(例) Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • UL E142422


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    PDF D3SBA60 E142422 D3SBA60

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    Abstract: No abstract text available
    Text: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D3SB□ Unit : mm Weight : 3.9g (typ.) Package:3S 800V 4A 管理番号(例) Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • UL E142422


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    PDF E142422

    d3sb 60 40

    Abstract: DIODE d3sb 20 d3sb 60 10
    Text: シングルインライン型 ブリッジダイオード Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Package:3S Unit : mm Weight:3.9g(typ.) D3SB□ 管理番号(例) Control No. ロット記号(例) Date code


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    PDF E142422 25unless wave50Hz d3sb 60 40 DIODE d3sb 20 d3sb 60 10

    d3sb 60 10

    Abstract: D3SB60 D3SB20 D3SB80
    Text: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D3SB□ Unit : mm Weight : 3.9g (typ.) Package:3S 800V 4A 管理番号(例) Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • UL E142422


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    PDF E142422 25unless D3SB20 D3SB60 D3SB80 1mst10msTj d3sb 60 10 D3SB80

    D3SBA20

    Abstract: D3SBA60 CIRCUIT D3SBA60
    Text: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D3SBA□ Unit : mm Weight : 3.9g (typ.) Package:3S 600V 4A 管理番号(例) Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • UL E142422


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    PDF E142422 D3SBA60 25unless D3SBA20 D3SBA60 1mst10msTj CIRCUIT D3SBA60

    d3sb 60 10

    Abstract: D3SB60 D3SB80
    Text: シングルインライン型 Bridge Diode Single In-line Package •外観図 OUTLINE D3SB□ Unit : mm Weight : 3.9g (typ.) Package:3S 800V 4A 管理番号(例) Control No. 品名 Type No. 特長 • 薄型 SIP パッケージ • UL E142422


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    PDF E142422 25unless J534-1 d3sb 60 10 D3SB60 D3SB80

    D3SBA60

    Abstract: No abstract text available
    Text: シングルインライン型 ブリッジダイオード Single In-line Package Bridge Diode •外形寸法図 OUTLINE DIMENSIONS Package:3S Unit : mm Weight:3.9g(typ.) D3SBA□ 管理番号(例) Control No. ロット記号(例) Date code


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    PDF E142422 25unless wave50Hz D3SBA60

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    Abstract: No abstract text available
    Text: V i 7 h 3- A ' U 7 t — K Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D3S6M 60V 3A I M • T j 1 50°C • P rhsm E • 1 .4 0 Ü -K •S R S • D C /D C S' •S « . y -A . •a n . jk- ^ O A fllS I w bm RATINGS Absolute Maximum Ratings «


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    diode D3s

    Abstract: wwS marking d3s marking d3s diode
    Text: Schottky Barrier Diode Axial Diode Wtm OUTLINE P ack ag e : AX14 D3S6M Unit-mm Weight 1.06g Typ 60V 3A cl) Feature • Tj=150°C • P rr s m T ’A ' ^ V ì ' I ' K •^ ì E 26.5 26.5 • Tj=150°C • P r r s m Rating 0> H 4- Main Use " j^ -y ^ w s ä


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    d3s marking

    Abstract: d3s diode DIODE marking S6 89
    Text: Schottky Barrier Diode Axial Diode Wtm OUTLINE P ack ag e : AX14 D3S4M 40V 3A 0 Feature • Tj=150°C • Tj=150°C • P r r s m T ’A ' ^ V ì ' I ' K ì E • P rrsm Rating DC/DC n y j t - l ? • m m 26.5 26.5 iT > Main Use • * JS fM M B S H Marking


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    diode d3s6m

    Abstract: 251C
    Text: Schottky Barrier Diode Axial Diode OUTLINE Package I AX14 D3S6M U nit : m m W eight 1.06g Typ 60V 3A @ T Feature Z I 26.5 • T j= 1 5 C fC • Tj=150°C • P rrsm P K ^ V î/x (S ü E • P r r s m Rating 26.5 M Main Use * g m m iH N H M arking • Switching Regulator


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    PDF 15ffC J533-1) diode d3s6m 251C

    d3s diode

    Abstract: d3s 57 diode 6562s DIODE d3s d3s schottky d3s 05 diode DIODE d3s 57 D3S6
    Text: 5 /a s /h *- AUT' S H 'Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D3S6M Package I AX14 60V 3A CD 1 •Tjl50°C • P rrsm 26.5±2 I7 ffiiE U> t w Í7+0.5 7-0 26.5±2 W °@ • 1.40 U - K m D3S 1D • S R S ÎÜ •D C /D C n y j K — P •W M , tf- h s


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    PDF Tjl50 d3s diode d3s 57 diode 6562s DIODE d3s d3s schottky d3s 05 diode DIODE d3s 57 D3S6

    SHINDENGEN DIODE

    Abstract: No abstract text available
    Text: ' >3 7 h U T 7 K Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D3S6M 60V 3A • T j 150'C ? V ? y ÿ - L fitW •P h h k m • ] • S .4 0 R U — » § • D C /D C •m m , • a « K J y / K - 9 y - A . 0A«âs , MÏÏfèm RATINGS Absolute Maximum Ratings


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    Untitled

    Abstract: No abstract text available
    Text: y a y h V Schottky Barrier Diode # — K - v fjiia D3S4M 4 0 V OUTLINE DIMENSIONS Case : 1.4 ^ 3 A 25 ±2 m 7 1<? ìt 2S=2 a f 4.4 -o t - • T j 1 5 0 ”C • P rrsm • 1.4 K Axial Diode -É 5 - 1* K U— K o - -W w&m ''C o lor code ffl m •S R B ü


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    PDF QQQ31Ã

    DIODE d3s

    Abstract: MARKING MM d3s diode d3s4m D3S4 d3s4m diode diode MARKING CODE A9
    Text: Schottky Barrier Diode Axial Diode OUTLINE D3S4M 40V 3A Feature • Tj=15CfC • Tj=150°C • P r r sm P K ^ V î/ x S ü E • P rrsm Rating Main Use • Sw itching Regulator • DC/D c u y jt— ? • D C /D C Converter • W M . f - h s O A t lf g • Hom e Appliance, G am e, Office Automation


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    PDF 15ffC -40-a It501 J533-1 DIODE d3s MARKING MM d3s diode d3s4m D3S4 d3s4m diode diode MARKING CODE A9

    d3s diode

    Abstract: d3s4m diode DIODE d3s
    Text: 5 / a s / h * - A U T ' S H ' Í Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS D S 3 Package I AX14 M 4 40V 3A CD •T jl5 0 °C • P r r s m I 7 • IÍ7+0.5 26.5±2 f f iiE t w 7-0 U > W 26.5±2 °@ 1 .4 0 U - K m D3S 51 • S R S ÎÜ ffi'E Polarity


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    PDF J515-5 d3s diode d3s4m diode DIODE d3s

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode Axial Diode mtm D3S4M O U T L IN E U n it ! m m Package I AX14 W e igh t 1 .0 6 g T yp 40V 3A * Feature 7 26.5 • Tj=150°C • P r r s m Rating • T j=150T C • PRRSM ^y^ VÍ/X<SÍ¡E • D C /D C 3 • ÍÜ 5 1 . y - A . O A t l f s


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    PDF J533-1

    SHINDENGEN DIODE

    Abstract: No abstract text available
    Text: '> 3 h ^ • / 'v V T 7 ^ — K Schottky Barrier Diode Axial Diode \W fà- v f - i ï E l O U T L IN E D IM E N S IO N S D3S4M 40V 3A •Tj 15013 • P iiK S M • ifS â l l. 4 i> U - h ’ • SRW • DC/DC j y n - 9 •m m . t f - h . 0 A«sää • fl« .


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    ECG905

    Abstract: diodo 376 diodo 10 A
    Text: PHILIPS E C Q INC 17E D {□ □53^20 □□D3Sci5 1 ECG905 DIODE ARRAY O n* Dlod« “QiMd” and Two laolatad Dtodaa on a Common SubttraU semiconductors D IM EN SIO N AL O U T LIN E T h a i CG905 consists of one Diode "Q u a d " and two Isolated Diodes on a Common Substrate.


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    PDF CG905 10-Terminal ECG905 T-43-24 ECG905. 0QQ35Ii& ECG90S. ECG905 diodo 376 diodo 10 A

    IXGH20N60AU1

    Abstract: N60A *GH20N60AU1 20N60AU 20N60
    Text: 600 V 600 V 40 A 40 A CO iO, LU ^C25 O IXGH 20 N60U1 IXGH 20 N60AU1 > Low VrP, n IGBT with Diode CE sat High speed IGBT with Diode v CES 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ


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    PDF IXGH20 N60U1 IXGH20N60AU1 O-247 4bflb22b 20N60U1 20N60AU1 N60A *GH20N60AU1 20N60AU 20N60

    Untitled

    Abstract: No abstract text available
    Text: 7 'J 7 Single In-line Package Bridge Diode / ^ > v Avalanche type O U T L IN E D IM E N S IO N S D3SBDZ 800V 4A • R A TING S Absolute Maximum Ratings * *e# a Item Symbol m m & g ~ —— Conditions □a £ - - Type No. Tstg Storage Temperature


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    PDF 50HzEKi D3SB80Z

    D3SBA60

    Abstract: No abstract text available
    Text: î/y ^ n /'fy ^ 'fy M - j'j v V ÿ 'C t - F Single In-line Package Bridge Diode • ^ ^ H l OUTLINE DIMENSIONS Package : 3S D3SBA TO 600V 4A 45 £1 •»süsiPA’y ' r - y •UL1SW UL File No,E 142422 • H I fsm (D © Unit : mm («fiLtCDSâSEOLYCB:, }£EPtt«£C!B18< fc'ÎU)


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    PDF D3SBA20 D3SBA60 J514-5