Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE D2B Search Results

    DIODE D2B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE D2B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCS028N06NS

    Abstract: 028N06NS DC1502
    Text: DEMO MANUAL DC1502A LTC4359HDCB 12V/20A Ideal Diode with Reverse Input Protection DESCRIPTION Demonstration circuit 1502A showcases the LTC 4359 ideal diode controller with reverse input protection. The board includes two independent LTC4359 ideal diode circuits, sharing a common ground and operating over a


    Original
    PDF DC1502A LTC4359HDCB 2V/20A LTC4359 dc1502af BCS028N06NS 028N06NS DC1502

    Untitled

    Abstract: No abstract text available
    Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current


    Original
    PDF LTC4359 LT4256 LTC4260 LTC4223-1/LTC4223-2 4359f

    FDS3732

    Abstract: 3b transistor
    Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current


    Original
    PDF LTC4359 4359fa com/LTC4359 FDS3732 3b transistor

    LTC4359CMS8

    Abstract: No abstract text available
    Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown Current n Low 150 A Operating Current


    Original
    PDF LTC4359 LT4256-1/LT4256-2 LTC4260 LTC4364 4359fb com/LTC4359 LTC4359CMS8

    IN751a

    Abstract: 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller
    Text: LTC4359 Ideal Diode Controller with Reverse Input Protection Features Description Reduces Power Dissipation by Replacing a Power Schottky Diode n Wide Operating Voltage Range: 4V to 80V n Reverse Input Protection to – 40V n Low 9µA Shutdown current n Low 150 A Operating Current


    Original
    PDF LTC4359 4359f IN751a 3b transistor IN759A LTC4363 IN751 FDS3732 solar voltage regulator 24v 48v 150A mosfet switch BSC011N03LS block diagram 12V solar charge controller

    MMD0840

    Abstract: fs r6a CIRCUIT DIAGRAM IN5711 vishay LIMITING INRUSH CURRENT mosfet LTC6910-1 coiltronics ctx02-13664 MMD-0840 CTX02-13664 LTC3439 mmd series mosfets
    Text: LINEAR TECHNOLOGY VOLUME XII NUMBER 4 DECEMBER 2002 COVER ARTICLE Ideal Diode Controller Eliminates Energy Wasting Diodes in Power OR-ing Applications . 1 David Laude Issue Highlights . 2 LTC in the News . 2


    Original
    PDF 400MHz OT-23 S-191 MMD0840 fs r6a CIRCUIT DIAGRAM IN5711 vishay LIMITING INRUSH CURRENT mosfet LTC6910-1 coiltronics ctx02-13664 MMD-0840 CTX02-13664 LTC3439 mmd series mosfets

    6.4v zener diode

    Abstract: 8251 1N4565 1N4565A 1N4566 1N4566A 1N4567 1N4568 1N4569 LE17
    Text: 6.4V TEMPERATURE COMPENSATED ZENER DIODE 1N4565 - 1N4584AD2A 1N4565 - 1N4584AD2B • Hermetic Ceramic Surface Mount Package • 6.4V ±5% Reference Voltage • Stable over a wide temperature range • Space Level and High-Reliability Screening Options Available


    Original
    PDF 1N4565 1N4584AD2A 1N4584AD2B 500mW 1N4565AD2A-JQRS 6.4v zener diode 8251 1N4565A 1N4566 1N4566A 1N4567 1N4568 1N4569 LE17

    1N4148DLCC2

    Abstract: LE17 MIL-PRF19500 QR217
    Text: SILICON EPITAXIAL PLANAR DIODE 1N4148DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available


    Original
    PDF 1N4148DLCC2 200mA 385mW 1N4148D2A-JQRS 1N4148DLCC2 LE17 MIL-PRF19500 QR217

    Marking D2B

    Abstract: 1N5806 1N5806-DLCC2
    Text: DIODE, SILICON, SWITCHING 1N5806-DLCC2 IN ACCORDANCE WITH ESCC 5101/014 Detail Specification No: 8586 Aerospace Division Issue :1 November 2009 SEMELAB Ltd 2009 1N5806-DLCC2-SCD SML-TMPL-ER-001-ISS1 Contents Page CONTENTS . 2


    Original
    PDF 1N5806-DLCC2 1N5806-DLCC2-SCD SML-TMPL-ER-001-ISS1 Marking D2B 1N5806 1N5806-DLCC2

    1N6642

    Abstract: LE17 MIL-PRF19500 QR217 l2d diode
    Text: SILICON EPITAXIAL PLANAR DIODE 1N6642DLCC2 • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available


    Original
    PDF 1N6642DLCC2 300mA 385mW 1N6642D2A-JQRS 1N6642 LE17 MIL-PRF19500 QR217 l2d diode

    QR217

    Abstract: LE17 MIL-PRF19500
    Text: SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available


    Original
    PDF 1N4148D2A 1N4148D2B 200mA 1N4148D2A-JQRS QR217 LE17 MIL-PRF19500

    Untitled

    Abstract: No abstract text available
    Text: SiC SCHOTTKY DIODE SML01SC06D2A/SML01SC06D2B • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available


    Original
    PDF SML01SC06D2A/SML01SC06D2B SML01SC06D2A-JQRS

    Untitled

    Abstract: No abstract text available
    Text: SiC SCHOTTKY DIODE SML02SC06D2A/SML02SC06D2B • • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available


    Original
    PDF SML02SC06D2A/SML02SC06D2B SML02SC06D2A-JQRS

    LE17

    Abstract: MIL-PRF19500 QR217 QR* MARKING precap
    Text: SILICON EPITAXIAL PLANAR DIODE 1N4148D2A / 1N4148D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Surface Mount Package Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available


    Original
    PDF 1N4148D2A 1N4148D2B 200mA 385mW 1N4148D2A-JQRS LE17 MIL-PRF19500 QR217 QR* MARKING precap

    1N4148

    Abstract: LE17 MIL-PRF19500 QR217
    Text: 500mW ZENER DIODE 1N6328DLCC2 • • • Standard ±5% Zener Voltage Tolerance Hermetic Ceramic Surface Mount Package Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated PT TJ TSTG TSP


    Original
    PDF 500mW 1N6328DLCC2 500mW 6328D2A-JQRS 1N6328D2A-JQRS 1N4148 LE17 MIL-PRF19500 QR217

    LE17

    Abstract: MIL-PRF19500 QR217 1N5806-DLCC2 1n5806d
    Text: ULTRAFAST RECOVERY RECTIFIER DIODE 1N5806DLCC2 • Hermetic Ceramic Package Designed as a DropIn Replacement for D-5A MELF Package • Designed For High Reliability Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS Tamb = 25°C unless otherwise stated


    Original
    PDF 1N5806DLCC2 1N5806D2B-JQRS LE17 MIL-PRF19500 QR217 1N5806-DLCC2 1n5806d

    1N5806 d-5a

    Abstract: 1N5806D2A LE17 MIL-PRF19500 QR217 1N5806D2B-JQRS
    Text: ULTRAFAST RECOVERY RECTIFIER DIODE 1N5806D2A / 1N5806D2B • Hermetic Ceramic Package Designed as a DropIn Replacement for D-5A MELF Package • Designed For High Rel Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original
    PDF 1N5806D2A 1N5806D2B 1N5806D2B-JQRS 1N5806 d-5a LE17 MIL-PRF19500 QR217

    melf diode D-5A

    Abstract: melf diode marking MELF pad layout marking diode D2B gold melf QR217 1N4460US 1N5806US 1N5819 LE17
    Text: DIODE LEADLESS CHIP CARRIER DLCC2 • Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “MELF-5.1 D-5A ” / “A-MELF” packages† • Designed For High Reliability Military, Aerospace and Space Applications


    Original
    PDF 63Sn/37Pb 100mg 1N5806US 193mg 1N4460US 1N5819D2A-JQRS melf diode D-5A melf diode marking MELF pad layout marking diode D2B gold melf QR217 1N4460US 1N5806US 1N5819 LE17

    1N4565

    Abstract: 6.4v zener diode temperature compensated zener diode 8251 1N4565A 1N4566 1N4566A 1N4567 1N4567A 1N4568
    Text: 6.4V TEMPERATURE COMPENSATED ZENER DIODE 1N4565 - 1N4584ADLCC2 • Hermetic Ceramic Surface Mount Package • 6.4V ±5% Reference Voltage • Stable over a wide temperature range • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original
    PDF 1N4565 1N4584ADLCC2 500mW 1N4574AD2B-JQRS 6.4v zener diode temperature compensated zener diode 8251 1N4565A 1N4566 1N4566A 1N4567 1N4567A 1N4568

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR DIODE 1N6640D2A / 1N6640D2B • • • • • • Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”A-MELF” Package. Suitable for general purpose, switching applications.


    Original
    PDF 1N6640D2A 1N6640D2B 1N6640D2A-JQRS

    BZW14 diode

    Abstract: BZW14
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSBTBl QOHbTT'i 070 M A P X BZW14 A TRANSIENT SUPPRESSOR DIODE A double-diffused silicon glass passivated diode in a hermetically sealed axial-leaded glass envelope intended for transient suppression in telephony equipment.


    OCR Scan
    PDF BZW14 OD-64. 22/iF 7Z89449 BZW14 diode BZW14

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE blE I> bb53^31 DDSbbT1! ITT IAPX BYX90G E.H.T. AVALANCHE FAST SOFT-RECOVERY DIODE E.H.T. rectifier diode in glass envelope intended for general purpose high-voltage rectifying and also designed as sub-component for very high voltage stacks, fo r example, in X-ray equipment with fre­


    OCR Scan
    PDF BYX90G 003b7D3

    Untitled

    Abstract: No abstract text available
    Text: S i G E C AUGUST 1995 P L E S S E Y S E M I C O N D U C T O R S DS4169-2.3 DS1109SG RECTIFIER DIODE KEY PARAMETERS APPLICATIONS Rectification. V RRM • Freewheel Diode. U 710A U 11500A ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.


    OCR Scan
    PDF DS4169-2 DS1109SG 1500A DS1109SG50 DS1109SG49 DS1109SG48 DS1109SG47 DS1109SG46 DS1109SG45 CUR1109SG

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan
    PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor