BC647
Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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MMBD4148
200MA
OT-23
MBR0540
OD-123
1000MA
DO-214AC
B340A
5245B
225MW
BC647
bc657
C1093
smd diode c644
DIODE SMD c336
BC679
BC625
smd diode C645
smd diode c640
smd diode R645
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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4148
Abstract: diode 4148 in 4148 DIODE D16 in 4148 PIN DIAGRAM 4148 diode 4148 diode datasheet MAX 4148 D16-4148 D16-4150
Text: D16-4148 and 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax (480) 947-1503 D16-4150 Switching Diode Array FEATURES • • • 8 Diode Array Standard 16 pin Dual-In-Line Package UL 94V-0 Flammability Classification MECHANICAL • • •
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D16-4148
D16-4150
D16-4148/100V,
D16-4150/75V
D16-4148/75V,
D16-4150/50V
4148
diode 4148
in 4148
DIODE D16
in 4148 PIN DIAGRAM
4148 diode
4148 diode datasheet
MAX 4148
D16-4148
D16-4150
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D1665C5
Abstract: Infineon power diffusion process idh16g65c5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDH16G65C5
D1665C5
Infineon power diffusion process
idh16g65c5
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D1665C5
Abstract: IDW16G65C5
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW16G65C5 Final Datasheet Rev. 2.1, 2012-09-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for
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IDW16G65C5
D1665C5
IDW16G65C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDW16G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDW16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the
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IDW16G65C5
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D1665C5
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH16G65C5
D1665C5
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Untitled
Abstract: No abstract text available
Text: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH16G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH16G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
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IDH16G65C5
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LTC4098-3.6
Abstract: 6N16 l436 SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules IFS75B12N3T4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand MIPAQ™base module with trench/fieldstop IGBT4, emitter controlled 4 diode and current sense shunt
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IFS75B12N3T4
CEE32
1322D14
CEE326
732CF5CD
2313ECEC
1231423567896AB2CDEF1B6
54E36F
4112F
LTC4098-3.6
6N16
l436
SXA-01GW-P0.6
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NEC 2101
Abstract: 1SS304 marking A6
Text: DATA SHEET SILICON SWITCHING DIODE 1SS304 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper.
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1SS304
NEC 2101
1SS304
marking A6
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NEC IR
Abstract: 1SS303 NEC IR application note
Text: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.
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1SS303
150ce
NEC IR
1SS303
NEC IR application note
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marking A14
Abstract: 1SS305
Text: DATA SHEET SILICON SWITCHING DIODE 1SS305 HIGH SPEED SWITCHING SILICON EPITAXIAL DIODE FEATURES PACKAGE DIMENSIONS Unit: mm • Low capacitance: Ct = 4.0 pF MAX. • High speed switching: trr = 3.0 ns MAX. • Wide applications including switching, limitter, clipper.
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1SS305
marking A14
1SS305
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D8 marking, SOD123
Abstract: No abstract text available
Text: AZ23-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23
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AZ23-V-Series
OT-23
BZX84C,
OD-123
BZT52C
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
D8 marking, SOD123
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D8 marking, SOD123
Abstract: No abstract text available
Text: AZ23-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23
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AZ23-V-Series
OT-23
BZX84C,
OD-123
BZT52C
11-Mar-11
D8 marking, SOD123
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SP720
Abstract: 150pf 6kv AN9304 AN9612 SP720MD SP720MD-8 SP720MM SP720MM-8 CLCC automotive SCR PIN CONFIGURATION DRAWING
Text: Data Sheet July 1999 High Reliability Electronic Protection Array for ESD and Overvoltage Protection The SP720 is a High Reliability Array of SCR/Diode bipolar structures for ESD and over-voltage protection to sensitive input circuits. The SP720 has 2 protection SCR/Diode
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SP720
5M-1982.
150pf 6kv
AN9304
AN9612
SP720MD
SP720MD-8
SP720MM
SP720MM-8
CLCC automotive
SCR PIN CONFIGURATION DRAWING
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Diode d29 08
Abstract: DIODE D29 -08
Text: AZ23-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the
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AZ23-Series
OT-23
BZX84C,
OD-123
BZT52C.
13ake
D-74025
19-Apr-04
Diode d29 08
DIODE D29 -08
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DIODE D29 -08
Abstract: zener diode d27 Diode d29 08
Text: AZ23 Series VISHAY Vishay Semiconductors Dual Common-Anode Zener Diodes Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the
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OT-23
BZX84C,
OD-123
BZT52C.
D-74025
15-Jul-03
DIODE D29 -08
zener diode d27
Diode d29 08
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AZ23C3V0
Abstract: d29 08 AZ23C2V7 AZ23C3V3 AZ23C3V6 AZ23C3V9 AZ23C4V3 BZT52C BZX84C DZ23
Text: AZ23-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the
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AZ23-Series
OT-23
BZX84C,
OD-123
BZT52C.
D-74025
08-Jul-04
AZ23C3V0
d29 08
AZ23C2V7
AZ23C3V3
AZ23C3V6
AZ23C3V9
AZ23C4V3
BZT52C
BZX84C
DZ23
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TRANSISTOR K 314
Abstract: NEC semiconductor
Text: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING UNIT: mm chip dumper diode in collector to emitter and zener diode in
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2SD2463
2SD2463
C11531E)
TRANSISTOR K 314
NEC semiconductor
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Untitled
Abstract: No abstract text available
Text: AZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configuration with type designation DZ23, the single diode SOT-23 case with the
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AZ23-V-Series
OT-23
BZX84C,
OD-123
BZT52C.
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused
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SDA32
DIL20
200mA
SDA32
DIL20
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA
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SDA32
200mA
DIL20
SDA32
SDA32N20
SDA32D20
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