CM1293-04SO
Abstract: A1 D036 CM1293-02SR CM1293 D032 D033 sot23-5 footprint
Text: CM1293 2, 4, and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1293 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1293
CM1293
MSOP-10
CM1293-04SO
A1 D036
CM1293-02SR
D032
D033
sot23-5 footprint
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Untitled
Abstract: No abstract text available
Text: CM1293 2, 4, and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1293 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1293
CM1293
MSOP-10
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CM1293 2, 4, and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1293 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1293
CM1293
MSOP-10
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marking L2 SOT23 6
Abstract: Marking D2 SOT23-6 D038 CM1293-04SO SOT23-6 MARKING 310
Text: PRELIMINARY CM1293 2, 4, and 8-Channel Low Capacitance ESD Protection Arrays Features Product Description • • The CM1293 family of diode arrays has been designed to provide ESD protection for electronic components or sub-systems requiring minimal capacitive loading.
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CM1293
IEC61000-4-2
MSOP-10
marking L2 SOT23 6
Marking D2 SOT23-6
D038
CM1293-04SO
SOT23-6 MARKING 310
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melf ZENER diode COLOR BAND
Abstract: melf ZENER diode COLOR CODE IR32A 1N963B-1 1N962B-1 1N962BUR-1 1N962C-1 1N962D-1 1N992B-1 1N992BUR-1
Text: INCH-POUND MIL-PRF-19500/117R 18 March 2008 SUPERSEDING MIL-PRF-19500/117P 25 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR, TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH
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MIL-PRF-19500/117R
MIL-PRF-19500/117P
1N962B-1
1N992B-1,
1N962BUR-1
1N992BUR-1,
1N962C-1
1N992C-1,
1N962CUR-1
1N992CUR-1,
melf ZENER diode COLOR BAND
melf ZENER diode COLOR CODE
IR32A
1N963B-1
1N962D-1
1N992B-1
1N992BUR-1
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NW301
Abstract: NW203 NW302 NW303 NW103 NW305 BLP-50 D035 NW401 NW-301
Text: NW-DIODE SERIES NoiseWave’s noise diodes offer a symmetrical white Gaussian noise voltage distribution while maintaining a flat power spectral density versus frequency response. Applications for these diodes include built in test equipment, dithering for increased dynamic range of A/D
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OD-323
NW101
NW102
NW103
NW104
NW201
MW202
NW203
NW301
NW302
NW203
NW303
NW305
BLP-50
D035
NW401
NW-301
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NW301
Abstract: D0-35 NoiseWave NW-301
Text: NW-DIODE SERIES NoiseWave’s noise diodes offer a symmetrical white Gaussian noise voltage distribution while maintaining a flat power spectral density versus frequency response. Applications for these diodes include built in test equipment, dithering for increased dynamic range of A/D
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OD-323
NW101
NW102
NW103
NW104
NW201
MW202
DO-35
DO-35
NW301
D0-35
NoiseWave
NW-301
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 October 2006. INCH-POUND MIL-PRF-19500/117P 25 July 2006 SUPERSEDING MIL-PRF-19500/117N 6 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/117P
MIL-PRF-19500/117N
1N962B-1
1N992B-1,
1N962BUR-1
1N992BUR-1,
1N962C-1
1N992C-1,
1N962CUR-1
1N992CUR-1,
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IN4148-1
Abstract: 1N4148-1 JANTX 1N4148-1 JANTXV DIODE IN4148 in4148 1N4148-1 D0-35 switching diode in4148
Text: 1N4148-1 • 1N4148-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/116 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +200°C Storage Temperature: -65°C to +200°C
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1N4148-1
1N4148-1
MIL-PRF-19500/116
IN4148-1
IN4148-1
1N4148-1 JANTX
1N4148-1 JANTXV
DIODE IN4148
in4148
D0-35
switching diode in4148
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1N4148-1
Abstract: 1N4148-1 JANTX 1N4148-1 JANTXV in4148 D0-35 1N4148-1JANTX switching diode in4148
Text: • 1N4148-1 AVAILABLE IN JAN, PER MIL-PRF-19500/116 1N4148-1 JANTX, AND JANTXV • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +200°C Storage Temperature: -65°C to +200°C
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1N4148-1
MIL-PRF-19500/116
1N4148-1
IN4148-1
1N4148-1 JANTX
1N4148-1 JANTXV
in4148
D0-35
1N4148-1JANTX
switching diode in4148
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 08 October 1999. INCH-POUND MIL-PRF-19500/127N 09 July 1999 SUPERSEDING MIL-S-19500/127M 14 March 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/127N
MIL-S-19500/127M
1N4370A-1
1N4372A-1,
1N746A-1
1N759A-1,
1N4370AUR-1
1N4372AUR-1
1N746AUR-1
1N759AUR-1,
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CRD Diode
Abstract: HVRD
Text: Current Regulative Diodes 定電流ダイオード CRDは, 広い電圧範囲にわたって 電流を一定に制限するダイオードです。 CRD is diode in a D035 case which provides several constant currents up to a 100 D.C. voltage. lt is used as a current limiter or a signal generator.
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26min
F101L
E101L
UL94V0
/V100A
HVRD3010
HVRD1101
55Part
CRD Diode
HVRD
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1N746A-1
Abstract: 452 regulator JANHCB1N752
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 August 2006. INCH-POUND MIL-PRF-19500/127T 23 May 2006 SUPERSEDING MIL-PRF-19500/127R 19 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
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MIL-PRF-19500/127T
MIL-PRF-19500/127R
1N4370A-1
1N4372A-1
1N746A-1
1N759A-1,
1N4370AUR-1
1N4372AUR-1
1N746AUR-1
1N759AUR-1,
452 regulator
JANHCB1N752
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melf ZENER diode COLOR BAND
Abstract: MIL-prf-19500/437 437H 1N5521B JANTXV 1N5531B JANTXV 1N5518B-1 1N5518BUR-1 1N5518C-1 fsc do-35 physical dimensions 1N5518D-1
Text: INCH-POUND MIL-PRF-19500/437H 25 March 2008 SUPERSEDING MIL-PRF-19500/437G 12 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES 1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1,
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MIL-PRF-19500/437H
MIL-PRF-19500/437G
1N5518B-1,
1N5518C-1,
1N5518D-1
1N5546B-1,
1N5546C-1,
1N5546D-1,
1N5518BUR-1,
1N5518CUR-1,
melf ZENER diode COLOR BAND
MIL-prf-19500/437
437H
1N5521B JANTXV
1N5531B JANTXV
1N5518B-1
1N5518BUR-1
1N5518C-1
fsc do-35 physical dimensions
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lm 4011
Abstract: 1N3595US-1 1N3595US diode 1N3595 1N3595US1 JAN 1N3595 1N3595 D-5D 1N3595-1 1N3595UR-1 D0-35
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 August 2000. INCH-POUND MIL-PRF-19500/241H 1 May 2000 SUPERSEDING MIL-PRF-19500/241G 7 April 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEAKAGE, CONTROLLED FORWARD VOLTAGE
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MIL-PRF-19500/241H
MIL-PRF-19500/241G
1N3595US,
1N3595UR,
1N3595-1,
1N3595UR-1,
1N3595US-1
lm 4011
1N3595US-1
1N3595US
diode 1N3595
1N3595US1 JAN
1N3595
1N3595 D-5D
1N3595-1
1N3595UR-1
D0-35
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1N4007 ZENER DIODE
Abstract: diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v
Text: GENERAL PRODUCTS PART No. DEVICE TYPE PACKAGE DESCRIPTION ASY TRIGGER T098 VS1 - 14/18 VOLTS, VS2 - 7/9 VOLTS, SWITCHING CURRENT 80 mA. DIAC DIAC DIAC DIAC DIAC DIAC DIAC D035 D035 D035 D 035 D 035 D035 D035 32 40 34 32 35 40 60 DIODE DIODE DIODE DIODE DIODE
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N5400
1N5401
1N5402
1N4007 ZENER DIODE
diode A14A
diode
st4 diac
diode a15a
zener db3
zener diode 1n4744
diode zener 1n4002
zener diode 5A
zener 400v
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DFIG
Abstract: 1N4148 75V 150mA Diodes n4148 N4148W D0-35 1N4148 Diode N4148 gude 1N4148S Jinan Gude Electronic Device
Text: JGD 1N4148 O SMALL - SIGNAL SWITCHING DIODE R everse Voltage 100V Forward Current 150mA D035 FEATURES * Silicon Epitaxial Planar Diode * Fast switching diode * This diode is also available in other case styles in c lu d in g th S O D - 123 CASE WITH THE TYPE DESIG
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1N4148
150mA
N4148W
LL4148
OT-23
IMBD4148,
1N4148S.
100mA,
100MHz,
DFIG
1N4148 75V 150mA Diodes
n4148
D0-35
1N4148
Diode N4148
gude
1N4148S
Jinan Gude Electronic Device
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1N1743
Abstract: IN5234 IN5008 1N4202 zener diode 1N PH 48 diode 1n1418 1NS232 zener diode c51 ph 1n587 1N4465
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART Containing all JE D E C registered Zener diodes. This popular reference chart contains highlight information on all JE D E C registered Zener diode and rectifier types as well as Microsemi types. The following Codes are used:
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1N225
1N2260)
1N227
1N228
1N229
1N230O)
1N231d)
1N232
BZX83
BZX97
1N1743
IN5234
IN5008
1N4202
zener diode 1N PH 48
diode 1n1418
1NS232
zener diode c51 ph
1n587
1N4465
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zener diode bzy88
Abstract: bzy88 diod c22 zener diode BZ 320 BZY88 diode c4v3 zener diode diod c16 zener diod diod c33 nec zener diode
Text: SEC ELECTRON DEVICE 500mw ZENER DIODE B Z Y 8 8 -C 2 V 7 -B Z Y 8 8 -C 3 3 NEC Type BZY88- Series are DHD Double Heatsink Diode construction planar type zener diodes possessing an allowable O U TLIN E DRAWING (Unit : mm) power dissipation o f 500m watt.
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500mw
BZY88-
zener diode bzy88
bzy88
diod c22
zener diode BZ 320
BZY88 diode
c4v3 zener diode
diod c16
zener diod
diod c33
nec zener diode
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Untitled
Abstract: No abstract text available
Text: CNG35 CNG36 JV GaAIAs OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor w ith accessible base in a SOT90B envelope, designed for low input current and long life operation. The application o f an IR emitting diode, based on a special GaAIAs intrinsic process results in a
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CNG35
CNG36
OT90B
E90700
003S234
CNG36.
CIMG36.
003SSTS
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zener diode 1N PH 48
Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:
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BZX83
BZX97
BZX98
BZY97
BZD10
BZW22
BZV40
500mW
DO-35
zener diode 1N PH 48
zener diode 1N PH 53
1N3020-1
Diodo zener W
diodo zener C 18 ph
1N1743
diode ziner
1N4202
ST 41 Diodo Zener
1N32B
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FR4 epoxy glass 1.5mm substrate
Abstract: sheet metal press bending machine
Text: MOUNTING INSTRUCTIONS page Axial-leaded devices 562 SOT54 T092 563 SOT82 564 SOT78 (T0220AB); SOT186A 567 SOT223; SOT428; SOT4Q4 572 Philips Semiconductors Mounting instructions Axial-ieaded devices GENERAL DATA AND INSTRUCTIONS General rules Excessive forces or temperature applied to a diode may
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T0220AB)
OT186A
OT223;
OT428;
FR4 epoxy glass 1.5mm substrate
sheet metal press bending machine
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CBC 184 transistor
Abstract: S 354 OPTOCOUPLER CNX35U CNX36U CNX39U
Text: CNX35U CNX36U CNX39U T O OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r T T L integrated circuits. Features • • • •
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CNX35U
CNX36U
CNX39U
E90700
0110b
804/VDE
86/kft
CNX36U.
QD35414
CBC 184 transistor
S 354 OPTOCOUPLER
CNX35U
CNX36U
CNX39U
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1M823-1
Abstract: 1N827 DIODE 1N827 1N821-1 1N823 DIODE 1N825 1N829-1 1N825 1N827-1 1N821-1 JANTX
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1994 MIL-S-19500/159H 16 Hav 1994 SUPERSEDING MIL-S-19500/159G 22 January 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-REFERENCE,
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MIL-S-19500/159H
MIL-S-19500/159G
1N821,
1N823,
1N825,
1N827,
1N829,
1N821-1,
1N823-1,
1N825-1,
1M823-1
1N827
DIODE 1N827
1N821-1
1N823
DIODE 1N825
1N829-1
1N825
1N827-1
1N821-1 JANTX
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