Untitled
Abstract: No abstract text available
Text: MAGNUS 12 x 1.25 Gbps Parallel Optical Transmitter/Receiver PL-TCP-00-S93 Transmitter PL-RCP-00-S93 Receiver The MAGNUS parallel optical interconnect is a transmitter/ receiver pair operating with 12 channels at 1.25 Gbps for an aggregate bandwidth of 15 Gbps. The parallel modules
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PL-TCP-00-S93
PL-RCP-00-S93
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CQP410L
Abstract: COP420L COP452 200-SK COP400 COP399N COP420 COPS
Text: COP498/COP398/COP499/COP399 National Æ jA Semiconductor COP498/COP398 Low Power CMOS RAM and Timer RAT ' COP499/COP399 Low Power CMOS Memory General Description Features The COP498/398 Low Power CMOS RAM and Timer (RAT) and the COP499/399 Memory are peripheral members of
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COP498/COP398
COP499/COP399
COP498/398
COP499/399
COP499
COP401L/COP402/COP404L)
TL/DD/6684-11
COP49B/COP499
TL/DD/6684-12
CQP410L
COP420L
COP452
200-SK
COP400
COP399N
COP420
COPS
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HA 3089
Abstract: ic 7500 "Photo Interrupter" dual transistor 3045 PT photon coupled interrupter nte 3100 npn zero crossing triac FT DARLINGTON TRANSISTOR npn transistor photon coupled interrupter 3101 PT 1300 phototransistor
Text: ì mm NI T E E L E C T R O N I C S NTE TYPE WX OESCNPTtON 3039 Lite/Dark Switch -v INC 1 ?E ^ HAX SUPPLY VOUAGE DIAS NO. * K : • baiasi G O O l T b ö =1 ■ V MAX OUTPUT VOLTAGE ’ (V) HAX OUTPUT CURRENT (mA) . vcc v0UT 15 15 176 . UGHT THRESHOLD LEVEL
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2SC3054
Abstract: BY 399 DIODE diode BY 399
Text: Power T ransistors 2SC3054 2SC3054 Silicon NPN Triple-Diffused Junction Mesa Darlington Type High Breakdown Voltage, High Speed Switching • Features ■ Package Dimensions • High breakdow n voltage and high reliability by glass passivation • High DC cu rren t gain hFE
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2SC3054
Tc-100
10VX0
10VX1A
100X100X2mm
2SC3054
BY 399 DIODE
diode BY 399
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Untitled
Abstract: No abstract text available
Text: • 7 0 2 0 ^ DGDÖ251 IMS ■ R H H iz > ^/Sensors RPI-241 RPI-241 Photointerrupter -b > • i^ ffi^äH /D im en sio n s U nit: mm RPI-241 t h I■ 2 9 K, I ' Z 7 > i ' Z $ K5T -r ? - ^ > $ 7 ^ * V t o -f > * RPI-241 Is compact size photointerrup ter which adopted insert mold. IR diode
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RPI-241
RPI-241
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pj 809
Abstract: PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639
Text: fffi HARRIS C iI s E M , co N D u cToB HGTH12N40C1D, HGTH12N40E1D HGTH12N50C 1D , HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features • JEDEC TO-218AC TOP VIEW 12 Amp, 400 and 500 Volt • V ce ON ‘ 2.5V Max.
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HGTH12N40C1D,
HGTH12N40E1D
HGTH12N50C
HGTH12N50E1D
O-218AC
HGTH12N40E1D,
HGTH12N50C1D,
HGTH12N50E1D
pj 809
PJ 969 diode
PJ 986
diode 047
pj 986 diode
EM- 534 motor
PJ 969
GE 639
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Untitled
Abstract: No abstract text available
Text: DUAL FVLL-BRIDGE M OTOR DRIVER As an interface between low-level logic and solenoids, brushless dc motors, or stepper motors, the UDN2998W dual full-bridge driver will operate inductive loads up to 50 V with continuous output currents of up to 2 A per bridge or peak start-up currents to 3 A. The control
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UDN2998W
0S0433Ã
05G433fl
GG07fl3b
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Untitled
Abstract: No abstract text available
Text: 2961 HIGH-C ZJBRENT HALF-BRIDGE PRINTHEAD/MOTOR DRIVER— W ITH INTERNAL CURRENT SENSING AND CONTROL The UDN2961B and UDN2961W are 3.4 A half bridges designed specifically for driving solenoid printheads, stepper motors, and dc motors. The UDN2961B/W consists of a power source driver output,
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UDN2961B
UDN2961W
UDN2961B/W
N2961B
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HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET
Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED
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BUZ905D
BUZ906D
-100mA
-160V
-200V
HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET
2SJ56 2sk176
mosfet cross reference
2sk135 audio application
lateral mosfet audio amplifier
BUZ901P
2sJ50 mosfet
hitachi mosfet power amplifier audio application
BUZ900P
BUZ900D
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h1208
Abstract: equivalent transistor c 495 92CS-223S5 TA8340 radiosonde NYTRONICS choke Allen-Bradley carbon resistor H-1208 92CM-22389 Nytronics relay
Text: File No. 679 RF Pow er T ra n s is to rs Solid State o 8*0" 41038 750-mW, 1.68-GHz Oscillator Transistor Features: • Emitter-ballasting resistors ■ 750-rnW oscillator power at 1.68 GHz 20 V ■ Collector connected to case ■ For coaxial, stripline, and
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H-1208
750-mW,
68-GHz
750-rnW
TA8340.
h1208
equivalent transistor c 495
92CS-223S5
TA8340
radiosonde
NYTRONICS choke
Allen-Bradley carbon resistor
H-1208
92CM-22389
Nytronics relay
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74ls399
Abstract: 74LS398
Text: g MOTOROLA SN54LS/74LS398 SN54LS/74LS399 D E S C R IP T IO N — The S N 54 L S /7 4 L S 39 8 and S N 54 L S /7 4 L S 39 9 are Quad 2-Port Registers. They are th e logical equivalent of a quad 2-in p ut m ultiplexer follow ed by a quad 4 -bit edge-triggered register. A Common
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MG150J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 5 0 J 1 Z S 5 0 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. U nit in mm 2 -/6 .4 ± 0 .3 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One
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MG150J1ZS50
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Untitled
Abstract: No abstract text available
Text: 'V Latch-Up H EÏO N IJ PERFO RM A N CE LATCH-UP CIRCUIT Latch-up is cau sed by an SCR S ilico n C o n trolled R ectifier circuit. F ab rication o f CMOS integrated circuits w ith bulk silicon p ro cessin g crea tes a parasitic SCR structure. T h e b eh a v io r o f
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14105C-001
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Untitled
Abstract: No abstract text available
Text: as * * DUAL 4-BIT ADDRESSABLE LACTH DESCRIPTION The T54LS256/T74LS256 is a Dual 4-Bit Addres sable Latch with common control inputs; these in clude two Address inputs Ao, A t , an active LOW Enable input (E) and an active LOW Clear input (C). Each latch has a Data input (D) and four outputs
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T54LS256/T74LS256
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smd transistor NG
Abstract: No abstract text available
Text: FSYE13A0D, FSYE13A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically d esig n ed for c o m m ercial and m ilitary spa c e
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FSYE13A0D,
FSYE13A0R
1-800-4-HARRIS
smd transistor NG
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Untitled
Abstract: No abstract text available
Text: FSYE23A0D, FSYE23A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s File N u m b er
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FSYE23A0D,
FSYE23A0R
1-800-4-HARRIS
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str-f6654 PIN CONFIGURATION
Abstract: STR-F6654 STR-f6656 diagram STRF6653 strf6676 STRF6654 str SMPS CIRCUIT DIAGRAM STRF6656 str-f6676 STR-F6600
Text: STR-F6600 Series MicroSystems Europe Ltd. SMPS PRIMARY IC. X n n K i£ 0 Features ♦ Greatly R educed Parts Count ♦ Rugged Avalanche Rated MOSFET ♦ Choice of MOSFET Voltage and Rds on ♦ Flyback Operation with Quasi-Resonant Soft Switching for Low D issipation & EM I
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STR-F6600
400uA
up6600
STR-F6654
STR-F6672
STR-F6676
str-f6654 PIN CONFIGURATION
STR-F6654
STR-f6656 diagram
STRF6653
strf6676
STRF6654
str SMPS CIRCUIT DIAGRAM
STRF6656
str-f6676
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sem 2105 16 pin
Abstract: DQ02-1 7885M
Text: T02bfl72 DDD2173 flS2 • TH 7885M FULL FIELD CCD IMAGE SENSOR 1024x256 PIXELS MULTI-PINNED PHASE MODE MPP ■ Designed for spectroscopy. ■ Very low dark signal: 0.3 e~/pixel.sat -4 0 °C . VDD1 ^ P 4 ■ Optimized for high detectivity: output noise = 4 electrons.
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T02bfl72
DDD2173
7885M
1024x256
sem 2105 16 pin
DQ02-1
7885M
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81c176
Abstract: No abstract text available
Text: a Preliminary Am81C176 Advanced Micro Devices CMOS Color Palette DISTINCTIVE CHARACTERISTICS • Plug-In Replacement for Inmos G171 and G176 a Triple 6-blt Dlgital-to-Analog Converters DACs ■ RS-170A compatible RGB outputs ■ VGA hardware and software compatible
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Am81C176
28-pin
32-pin
RS-170A
1912-017A
81c176
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Untitled
Abstract: No abstract text available
Text: MP7690 CMOS Programmable Input Range 8-Bit High Speed Analog-to-Digital Converter ¡T E X A R FEATURES BENEFITS • • • • • • • • • Reduced Board Space small package Sampling Rates from 1 kHz to 15 MHz (MSPS) DNL better than 1/2 LSB from 1 kHz to 10 MHz
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MP7690
MP7690A
MP7690
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diode BY 399 itt
Abstract: Q20P010 M/Q20P025
Text: DEVICE SPECIFICATION ECL/TTL “TURBO ” LOGIC ARRAYS WITH PHASE-LOCKED LOOP Q20P010/Q20P025 FEATURES On-chip high frequency phase-locked loop Up to 1.25 GHz capability Edge jitter as low as 50 ps pk-pk 900 and 3000 gates of customizable digital logic Utilizes proven Q20000* Series macro library
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Q20000*
10Ops
TogP010
Q20P025
ii11n
iiii111n
Q20P010
Q20P025
0001b23
diode BY 399 itt
M/Q20P025
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Untitled
Abstract: No abstract text available
Text: w GEC PLESSEY OCTOBER 1996 ADVANCE INFORMATION S E M I C O N D U C T O R S KESRX01 290 - 460MHz ASK RECEIVER Supersedes Septem ber 1995 version, D S 3968 -1 .5 The KESRX01 is a single chip ASK (Amplitude Shift Key) Receiver IC. It is designed to operate in a variety of low power
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KESRX01
460MHz
KESRX01
50Kbits/sec
37b65Z2
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Untitled
Abstract: No abstract text available
Text: FSF055D, FSF055R 25A, 60V, 0.020 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 25A, 60V, ros ON = 0-020S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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FSF055D,
FSF055R
0-020S2
36MeV/mg/cm2
100KA
MIL-S-19500
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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