BB329
Abstract: BB*329 A 3V54
Text: BB329 TUNER DIODE Silicon Epitaxial Planar Capacitance Diode with very high effective capacitance ratio for tuning the whole VHF range in TV receivers, also suited for CTV. These diodes are delivered matched according to the tracking condition described below.
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BB329
1000MHz
BB329
BB*329 A
3V54
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BT 69D
Abstract: FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data
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FF200R12MT4
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
BT 69D
FBC 320
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DIODE C06-15
Abstract: DIODE C06 15 DIODE C06-13
Text: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter
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FS300R17KE3
CBB32
CBB326
223DB
2313BCBC
A3265C
C14BC
DIODE C06-15
DIODE C06 15
DIODE C06-13
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LTC4098-3.6
Abstract: SXA-01GW-P0.6
Text: Technische Information / technical information IGBT-Module IGBT-modules FF400R12KE3_B2 62mm C-Serien Modul mit Trench/Feldstopp IGBT3, EmCon High Efficiency Diode und M5 Lastanschluß 62mm C-series module with trench/fieldstop IGBT3 EmCon High Efficiency diode and M5 power terminals
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FF400R12KE3
CBB32
CBB326
223DB
2313BCBC
1231423567896A42BCD6ED3F
54B36
LTC4098-3.6
SXA-01GW-P0.6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"# 6$1B%3DE1322E14DDD &' 6 6*+,
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DDB6U25N16VR
3DE1322E14DD
2313B
32E36
26323D
32B612
4256F
223DB6
6323D
223DB64B6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM100GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM100GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM150GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM150GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
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br - b2d
Abstract: br b2d
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br - b2d
br b2d
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LTC4098-3.6
Abstract: 6n36
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM300GA120DLCS
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
LTC4098-3.6
6n36
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LTC4098-3.6
Abstract: 36A65 FBC 320
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM200GA120DLCS
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
LTC4098-3.6
36A65
FBC 320
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br b2d
Abstract: br- b2d br - b2d LTC4098-3.6
Text: Technische Information / technical information IGBT-Module IGBT-modules BSM300GB120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values
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BSM300GB120DLC
CBB32
CBB326
223DB
2313BCBC
3265C
C14BC
1231423567896A42BCD6ED3F
54B36
br b2d
br- b2d
br - b2d
LTC4098-3.6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DZ3600S17K3_B2 Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values !32C5C 361CB3D 1322 14DDD" 2313BCBC36134#62332 36B4"3
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DZ3600S17K3
2313BCBC
223DB
86B56
1231423567896A42BCD6EF
54B36
3567896A42BCD6
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Untitled
Abstract: No abstract text available
Text: Technische Information / technical information IGBT-Module IGBT-modules DD400S33KL2C Vorläufige Daten / preliminary data Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values #32E5E 36$1E3F132214FFF% 2313EE361346233236B4%3
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DD400S33KL2C
13265E
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TDB6HK180N16RR
Abstract: 6a65
Text: Technische Information / technical information IGBT-Module IGBT-modules TDB6HK180N16RR_B11 Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !325CEF36"#E$% 6D13BC1322C14BBB& ' 6*6+,231336134$62332C364&3
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TDB6HK180N16RR
CEF36"
3BC1322C14BB
32C36
36423B
4256E
D6345
6423B
36423B
6a65
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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RJJ0319DSP
Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?
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R07CS0003EJ0200
RJJ0319DSP
BCR8PM equivalent
RJP30H2
N0201
rjj0319
NP109N055PUJ
rjk5020
RJP30E2DPP
NP75N04YUG
lg washing machine circuit diagram
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Hitachi DSA002759
Abstract: No abstract text available
Text: BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 1.3 dB typ. at f = 200 MHz • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF,
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BB301C
ADE-208-507
Hitachi DSA002759
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BB301M
Abstract: Hitachi DSA00388
Text: BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; NF = 1.3 dB typ. at f = 200 MHz • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF,
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BB301M
ADE-208-506
BB301M
Hitachi DSA00388
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Untitled
Abstract: No abstract text available
Text: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55
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BAS55
bbS3131
7Z690B61
BAW62
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Untitled
Abstract: No abstract text available
Text: DISC TYPE DIODE SDF400QAA S D F 4 0 0 0 A A is a Flat Pack Diode designed for high power rectification. • If av = 4000A, Vrrm= 600V • High Reliability by pressure mount construction. (Applications) • High Power Rectifier • Welding Power Supply • Rectifier for metal surface treatment
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SDF400QAA
SDF4000AA20
SDF4000AA60
SDF4000AA40
B-169
SDF4000AA
B-170
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BB329
Abstract: BB*329 A
Text: BB329 Tuner Diodes Si Epitaxial Planar Capacitance Diode with very high effective capacitance ratio for tuning the whole VHF range in TV receivers, also suited for CTV. max. 1.90 These diodes are delivered matched according to the tracking condition described below.
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BB329
DO-35
BB329
BB*329 A
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24N60D1D
Abstract: 24N60D 24n60d1 620 tg diode
Text: f f l M A R R f â H G T G 2 N 4 6 D D 1 24A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode A p rii 19 9 5 Features Package JEDEC STYLE TO-247 • 24A .600V EMITTER • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode
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O-247
500ns
24N60D1D
24N60D
24n60d1
620 tg diode
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CV8805
Abstract: BY206 diode CV8308 SOD-18 BYX94 BY227 diode BY207 Diode 1N4007 DO-7 Rectifier Diode BYX10 diode BY227
Text: Diodes silicon picoampere diode book 1 part 3 and 4 BAV45 Description I frm m A < i Type No. E xtrem ely lo w leakage and lo w capacitance diode. O utline T O —18. Dwg. ref. A T 5 35 I r at V r 5 (pA ) 100 I r at V r 20 (pA ) max. lF (m A) (V ) Vf at I f
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BAV45
BY206
DO-14
BY207
h--22->
crt6-25
CV8805
BY206 diode
CV8308
SOD-18
BYX94
BY227 diode
Diode 1N4007 DO-7 Rectifier Diode
BYX10
diode BY227
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Untitled
Abstract: No abstract text available
Text: BB369S Tuner Diode Silicon epitaxial planar capacitance diodes with very wide effective capacitance variation for tunig the VHF range and hyperband in television tuners. Cathode Mark Top View These diodes are available as singles or as matched sets of two or more units according to the tracking condition
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BB369S
OD-323
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