c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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nec laser diode
Abstract: 1992E NDL7130D1 NDL7130D 1480 nm diode laser laser diode chip NEC diode
Text: N E C ELECTRONICS INC bgE » • b427525 00380b! b71 M N E C E PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL7130D, NDL7130D1 ELECTRON DEVICE 1 4 8 0 nm OPTICAL FIBER COMM UNICATIONS InGaAsP M Q W -DC-PBH LASER DIODE DESCRIPTION NDL7130D and NDL7130D1 are 1 480 nm pumping laser diode, that has a newly developed Multi-Quantum Well MQW
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NDL7130D
NDL7130D1
NDL7130D1
nec laser diode
1992E
1480 nm diode laser
laser diode chip
NEC diode
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1g3gt
Abstract: 1g3-gt general electric DIODE RECTIFIER P2T2 B-660 Scans-0017340 general electric
Text: iiMiAA K "m 1G3-GT <SmElBCTROñUCS r vT302° 1G3-GT diode Pa912-61 e1 DESCRIPTION A N D R A T I N G = = FOR TV HIGH-VOLTAGE-RECTIFIER APPLICATIONS The 1G3-GT is a filam entary diode designed for use in high-voltage low-current rectifier applications. It is especially
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B5-82,
B5-85,
B6-60,
B7-47,
1g3gt
1g3-gt
general electric DIODE RECTIFIER
P2T2
B-660
Scans-0017340
general electric
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Semikron skiip 22 nab 12
Abstract: semikron skiip 31 nab 12 T 18 SKiiP 33 NEC 125 To SEMIKRON SKIIP 20 NAB 12 T 45 semikron skiip 20 nab 12 I T 38 semikron skiip 83 ec Semikron skiip 31 nab 12 T 16 semikron skiip 31 nab 125 t 12 Semikron skiip 30 nab 12 semikron skiip 33 NEC 125
Text: fil3bt,71 D 0 0 b 74 D B MiniSKiiP o CO motor power |kW| Designation Ä MiniSKiiP ratings for basic AC/AC circuits rectifier brake chopper l-|A| VfcES., current temp Cal M /„ sWmts sensor diode P lf 25“C inverter Rth|h* [K/W] IGBT/ CAL diode size 5,0/4,0
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BY428
Abstract: ScansUX40
Text: T - O I - 1 7 Very fast parallel efficiency diode PHI LI P S I N T E R N A T I O N A L DESCRIPTION BY428 SbE D QUICK REFERENCE DATA Double-diffused glass passivated rectifier diode in a hermetically sealed, axial-leaded glass SOD64 envelope, intended for use as an
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711002b
0DMQM47
r-oi-17
BY428
7110fl2b
ScansUX40
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RB715F
Abstract: RB715W
Text: R B715F/R B715W Diodes_ Schottky Barrier Diode RB715FI RB715W •Applications General purpose detection High speed switching • External dimensions Units: mm R B715F R B715W •Features 1) Designed for mounting on small surface areas
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RB715F
RB715W
RB715F/RB715W
RB715W
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SKiiP 613 GB
Abstract: No abstract text available
Text: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C
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613bb71
QQ05Q01
0GQ50G3
00G5D04
SKiiP 613 GB
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Untitled
Abstract: No abstract text available
Text: s e MIKROn SKiiP 102 GD 120 - 304 WT Absolute Maximum Ratings |Conditions 1> V a lu e s Units IGBT & Inverse Diode V ces Operating DC link voltage Vcc 10 T heatsink = 25 °C lc T heatsin k = 25 °C, tp < 1 ms ICM IGBT & Diode Ti 3’ , AC, 1 min. Visol41
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613bb71
QQ05Q01
0GQ50G3
00G5D04
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skiip gb 120
Abstract: No abstract text available
Text: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
skiip gb 120
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Untitled
Abstract: No abstract text available
Text: SEMIKRON SKiiP 962 GB 060 - 350 W T/FT Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 600 V IGBT & Inverse Diode VcES V c c 10 O perating DC link voltage 400 V lc Theatsink —25 °C 900 A ICM Theatsink —25 °C, tp < 1 ITIS 1800 A IGBT & Diode
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arketin\datenbl\skiippac\600V\d962gb
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Untitled
Abstract: No abstract text available
Text: s e MIKROn SKiiP 362 G PL 060 - 453 WT 12> Absolute Maximum Ratings S ym b o l |C o n d itio n s 1 IGBT & Inverse Diode VcES Operating D C link voltage V c c 10) Theatsink —25 °C lc Theatsink —25 °C, tp 1 ms Ic M IGBT & Diode Ti 3 ) A C, 1 min. Viso!
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2GD060
B7-10
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SDF2000H
Abstract: SANSHA SDF2000H100 SDF2000H120 SDF2000H80
Text: SANSHA E L E C T R I C MFG CO sbE » • T w an a ban dgdomss m s e h j DISC TYPE DIODE SDF2000H r - 'ù j- z z SD F2000H is a Flat Pack Diode designed for high power rectifi cation. • If av = 2000A, VRRM= 1200V • High Reliability by pressure mount construction.
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SDF2000H
SDF2000H
SDF2000H80
SDF2000H100
SDF2000H120
SANSHA
SDF2000H120
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senju m705 solder wire
Abstract: Solder bar of Senju M705 senju M705 solder paste senju 533 solder paste spec Senju M705 solder bar GM4BW53340A PL80 senju solder bar C0806 senju m705 silver less solder wire 0.5 mm
Text: - _ _ • SPEC. No. S H A R P ISSU E May- ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. GM4BW53340A CUSTOMERS' APPROVAL PRESENTED Date _ Date M rt, y m :_ f j ; 2&d~7
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GM4BW53340A
senju m705 solder wire
Solder bar of Senju M705
senju M705 solder paste
senju 533 solder paste spec
Senju M705 solder bar
GM4BW53340A
PL80
senju solder bar
C0806
senju m705 silver less solder wire 0.5 mm
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Untitled
Abstract: No abstract text available
Text: 3bE D S E M I K R O N INC V rsm • 0l3L>b71 G 0 0 2 2 4 b SEMIKRON ^.n .0-7 60 A SEMIPACK 0 Rectifier Diode Modules 38 A SKKD15 SKKE15 Ifrms m aximum values fo r continuous operation V rrm 24 A21; 28 A31 I 2 4 A 2);2 8 A 3) I I fav ( sin. 180; Tease ~ 7 1°C )
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SKKD15
SKKE15
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Untitled
Abstract: No abstract text available
Text: 1 D 4 I O O M - O 5 O 4 a : Outline Drawings POWER TRANSISTOR MODULE : • 4 » Features • hFE*''fi\-' High DC Current Gain • High speed switching • KrtSK • SfeijSt Including Freew h eelin g Diode Insulated Type ■Applications • Power Switching
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E82988
I95t/R89)
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SKiiP 613 GB
Abstract: No abstract text available
Text: •I filBbib?! GGD5D51 SKiiP 192 G D L170 - 471 WT Absolute Maximum Ratings Symbol | Conditions11 Values Units 1700 1200 150 300 - 5 5 . . . + 150 3500 150 300 1450 10,5 V V A A °C V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/|is °C IGBT & Inve rse Diode
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GGD5D51
613bb71
QQ05Q01
0GQ50G3
SKiiP 613 GB
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Untitled
Abstract: No abstract text available
Text: 5EMIKR0N SKiîP 462 GB 060 - 250 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units Operating DC link voltage Theatsink = 25 °C Theatsink = 25 'C, tp < 1 ms I G B T & Diode AC, 1 min. Theatsink = 25 °C Theatsink = 25 °Cj tp < 1 ms tp = 10 ms; sin.; T j = 150 °C
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13bfc
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M109
Abstract: 5M470
Text: 1DI4O O M -O 5O 400 a POWER TRANSISTOR MODULE Features • hFE*'“ ^ High DC Current Gain • High speed sw itching ing Free W heeling Diode • Insulated Type •Applications • ^ 1 8 'hT A 'vT 'sV Power S w itching • A C i— AC M o to r Controls
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E82988
I95t/R89
Shl50
M109
5M470
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Untitled
Abstract: No abstract text available
Text: Ô13bb71 SKiiP 102 GDL 120 - 403 WT E/U Absolute Maximum Ratings Symbol Values Units 1200 900 150 300 - 5 5 . . . + 150 3000 5) 150 300 1450 10,5 V V A A °C V A A A kA2s | Conditions IGBT & Inve rse Diode V ces Operating DC link voltage Vcc 10) Theatsink —25 °C
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13bb71
D0D5D27
613bb71
QQ05Q01
ai3bb71
613bb71
0GQ50G3
00G5D04
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Untitled
Abstract: No abstract text available
Text: s e M IK R D n SKiiP 192 GD 170 - 371 WT Absolute Maximum Ratings Symbol | Conditions 1> Values Units 1700 1200 150 300 - 5 5 . . . + 150 4000 150 300 1450 10,5 ICM T j 3 Visoi4> If I fm Ifsm l2t Diode) Driver Vsi VS291 dv/dt Stabilized power supply Nonstabilized power supply
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
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b711
Abstract: No abstract text available
Text: SEMIKRON SKiiP 462 GB 060 - 250 W T Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 600 V IGBT & Inverse Diode VcES V c c 10 O perating DC link voltage lc T h ea tsink ICM T h ea tsink SKiiPPACK SK integrated intelligent Power PACK halfbridge
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arketin\datenbl\skiippac\600V\d462gb
b711
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skiip gb 120
Abstract: No abstract text available
Text: s e m ik r o n SKiiP 802 GB 120 - 401 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 800 1600 - 5 5 . . . + 150 3000 51 800 1600 8600 374 V V A A A kA2s 18 30 75 - 2 5 0 . . . + 85(70) V V kV/jiS <C | Conditions1> IGBT & Inve rse Diode V ces
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
skiip gb 120
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SKIIP 602 GB 120 301 FT
Abstract: No abstract text available
Text: s e m ik r d n SKiiP 602 GB 120 - 301 WT/FT Absolute Maximum Ratings Symbol Values Units 1200 900 600 1200 - 5 5 . . . + 150 3000 5 600 1200 6480 210 V V A A °C A A A kA2s 18 30 75 - 25 0 ) . . . + 85(70) V V kV/[is °C | Conditions1> IGBT & Inve rse Diode
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613bb71
QQ05Q01
ai3bb71
0GQ50G3
00G5D04
SKIIP 602 GB 120 301 FT
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semikron skd
Abstract: No abstract text available
Text: SEMIKRON SKiiP 1262 GB 060 - 451 W T/FT Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 600 V IGBT & Inverse Diode VcES V c c 10 O perating DC link voltage 400 V lc Theatsink —25 °C 1200 A ICM Theatsink —25 °C, tp < 1 ITIS 2400 A
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arketin\datenbl\skiippac\600V
1262gb
semikron skd
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