Untitled
Abstract: No abstract text available
Text: MBRS410ET3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS410ET3
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MBRS410ET3
Abstract: No abstract text available
Text: MBRS410ET3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS410ET3
r14525
MBRS410ET3/D
MBRS410ET3
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Untitled
Abstract: No abstract text available
Text: MBRS410ET3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS410ET3
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Untitled
Abstract: No abstract text available
Text: bEE I> • b4E7SSS □□374S4 fiSM HNECE N E C ELECTRONICS INC _ LASER DIODE MODULE / NDL5717P 1 3 1 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION NDL5717P ¡s a 1 310 nm laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is designed fo r a
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NDL5717P
b427SES
INIDL5717P
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Untitled
Abstract: No abstract text available
Text: 30E D NEC • b4E? 555 OGai Sl l 7 ■ ELECTRONICS INC LA S ER DIODE / NDL5003 1 300 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL50Û3 is a long wavelength laser diode especially designed for long distance high capacity transmission systems. The DCPBH Double Channel Planar Buried Heterostructure can achieve stabfe fundamental oscillation in wide temperature range.
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NDL5003
NDL50
b427S25
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1B89
Abstract: RT-70
Text: N E C ELE CTRONICS INC b5E ]> • b4E7525 00300^1 3QT ■ NECE DATA SHEET NEC PHOTO DIODE N D L 5405L ELECTRON DEVICE 1 0 0 0 t o i 600 nm OPTICAL FIBER COMMUNICATIONS 0 8 0 um InGaAs PIN PHOTO DIODE DESCRIPTION NDL5405L is an InGaAs PIN photo diode with micro lens for a light detector of long wavelength transmission systems. It
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b4E7525
5405L
NDL5405L
RL5500C
L5500P*
L5500
NDL5405
L5405L
L5510C
L5405P*
1B89
RT-70
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NEC K 2500
Abstract: DAD 1000 05611 LD1104 NDL3000 laser diode for printer NEC diode J22686 6W7525
Text: ST a ^ DE|b4E7525 642 6 427525 Nfcv ODDSt.ll fi N E C TENTATIVE SPEC IFIC ATION ELECTRONICS'INC 59C 05611 7 D T-41-05 LASER DIODE ELECTRON DEVICE NDL3000 D A D ,V D APPLICA TIO N AIGaAs DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTION NDL3000 laser diode is developed for DAD Digital Audio Disk , Video Disk optical head and non impact laser printer. The
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b4E7525
6W7525
T-41-05
NDL3000
NDL3000
Tokyo456-3111,
J22686
LD-1104B
NEC K 2500
DAD 1000
05611
LD1104
laser diode for printer
NEC diode
J22686
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Untitled
Abstract: No abstract text available
Text: bEE D b4E7S2S DÜ37SM7 111 « N E C E N E C ELECTRONICS INC LASER DIODE N D L 5 6 0 0 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB DC PBH LASER DIODE DESCRIPTION N D L 5 6 0 0 is a 1 310 nm D F B D istributed Feed-back laser diode especially designed fo r long distance high capacity transm is
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37SM7
NDL5600
b427S2S
b427525
GQ37SS0
NDL5600
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTO DIODE NDLS531P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 030 fim InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an In G a A s avalanche photo diode module with single mode fiber. It is designed for detectors
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NDLS531P
NDL5531P
SM-9/125)
b42752S
L427525
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cd photo diode
Abstract: NDL5510
Text: bEE » • b4E75E5 DD37bß^ 251 BNECE N E C ELECTRONICS INC PHOTO DIODE / NDL5510 1 OOO to 1 6 0 0 nm OPTICAL FIBER COMMUNICATIONS <¿80//m InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5510 is an InGaAs Avalanche Photodiode especially designed fo r a detector o f long wavelength optical fib er communica
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NDL5510
80//m
NDL5510
cd photo diode
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LD-7733
Abstract: LD234 IEI-1209 NEC LASER DIODE butterfly package
Text: N E C b2E D ELECTRONICS INC • b l427S2S OOBflDbS 217 * N E C E PRELIMINARY DATA SHEET LASER DIODE NDL7537P 1 480 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DC-PBH LASER DIODE MODULE DESCRIPTION NDL7537P is a 1 480 nm pumping laser diode module w ith optical isolator for an Er-doped optical fiber
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427S2S
NDL7537P
NDL7537P
b427525
L7537P
LD-7733
LD234
IEI-1209
NEC LASER DIODE butterfly package
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NDL5407P
Abstract: NDL5407P1 V8580
Text: N E C ELECTRONICS INC b2E D • b427525 DD3ñDTfi 7b3 ■ NECE DATA SHEET N EC PHOTO DIODE NDL5407P, NDL5407P1 ELECTRON DEVICE 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS #80 jam InGaAs PIN PHOTO DIODE MODULE WITH MMF NDL5407P and NDL5407P1 are InGaAs PIN photo diode modules with GI-50/125 multimode fiber pigtail. They are designed
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b427525
NDL5407P,
NDL5407P1
NDL5407P
NDL5407P1
GI-50/125
NDL5407P
L5500
V8580
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Irf 1540 N
Abstract: Irf 1540 G LC7566 Irf 1540 ndl5654p LC-7566 ld2sc
Text: N E C ELECTRONICS INC bSE D • tjMS7SES GD38Ü20 05R * N E C E DATA SHEET NEC LASER DIODE MODULE NDL5654P ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5654P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode DIP module with singlemode fiber. It incorpo
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NDL5654P
NDL5654P
b4275B5
GG3fi023
b427S25
Irf 1540 N
Irf 1540 G
LC7566
Irf 1540
LC-7566
ld2sc
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fro 108
Abstract: No abstract text available
Text: b£E » • b4S7525 0D37S04 553 MNECE_ N E C ELECTRONICS INC LASER DIODE /_ NDL5735PA 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP D C P B H LASER DIODE MODULE DESCRIPTION N D L 5 7 3 5 P A is a 1 310 nm laser diode DIP m odule w ith singlemode fib e r w ith o u t therm o-electric cooler. It incorporates
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4S7525
D37S04
NDL5735PA
b427555
fro 108
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Untitled
Abstract: No abstract text available
Text: b2E T> N E C m b4E7SES 0037410 4TT « N E C E ELECTRONICS INC l A S £ R d ,q d e / M q d ULE NDL5720P 1 5 5 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DC-PBH LASER DIODE MODULE DESCRIPTION N D L5720P is a 1 550 nm laser diode DIP m odule w ith singlemode fib e r and internal therm o-electric cooler. It is designed fo r a
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NDL5720P
L5720P
0037S0D
b427525
0G37SQ1
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Optical Detector
Abstract: common cathod PH314 SYM80L
Text: N E C ELECTRONICS INC 30E D • b427S2S 0 0 2 ^ 2 5 7 ■ T ~'V \ ~ Ç 3 > PHOTO DIODE PH314 SILICON EPITAXIAL PLANAR PIN PHOTO DIODE DETECTOR for DAD, VD PACKAGE DIMENSIONS (Unit : mm 1.8 ± 0.2 1.27 — °MM. ( 0 . 2) “'o.as FEA TU R ES • • • •
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PH314
10Temperature
T-41-53
SYM80L
Vr-15V
Optical Detector
common cathod
PH314
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2207B
Abstract: No abstract text available
Text: N E C ELECTRONICS INC bSE H • bM2752S 0038123 7X1 « N E C E DATA SHEET NEC PHOTO DIODE NDL5510C ELECTRON DEVICE 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS ^80 „m InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5510C is an InGaAs Avalanche Photodiode especially designed for a detector of long wavelength optical fiber communica
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bM2752S
NDL5510C
NDL5510C
NDL5520P
DLS501P
NDL5520P1
NDL5501P1
NDL5506P:
Gl-50
DL5516P:
2207B
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbSB'lBl OQSblB? 336 BA220 b^E D APX Jl GENERAL PURPOSE DIODE Silicon planar epitaxial diode in a DO-35 envelope; intended for general purpose and can also be used as regulator. Q U IC K R E F E R E N C E D A T A Repetitive peak reverse voltage
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BA220
DO-35
bb53c
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A940
Abstract: PH302C
Text: N E C b4S7S2S OOSTbO? 5 3GE D EL EC TRONICS INC r PHOTODIODE G PH302C PLASTIC MOLDED PIN PHOTO DIODE PACKAGE DIMENSIONS DESCRIPTION Unît: mm 7.Z + 0.Z Cl PH302C is a photo diode with PIN structure. It has a wide photo-receiving 2.8 ± 0.2 1 1 area and high speed response enabling applications for various remote
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PH302C
PH302C
tf-50
A940
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Untitled
Abstract: No abstract text available
Text: 3GE D • b>427525 002=1350 T ■ N e'c ELECTRONICS INC T '^ S O P H O T O D IO D E J NDL5102P 1 300 nm OPTICAL FIBER COMMUNICATIONS 0 3 0 jum GERMANIUM AVALANCHE PHOTO DIODE MODULE D ESCRIPTIO N N DL5102P is a Germanium Avalanche Photo diode with singlemode fiber, especially designed for a detector o f long wave*
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NDL5102P
DL5102P
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N
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b42752S
NDL5104P,
NDL5104P1
L5104
NDL5104P1
NDL51M
b427S25
NDL5100
NDL5100C
NDL5100P
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IMDL5500P
Abstract: NDL5500P avalanche photodiode 1550nm sensitivity avalanche 1550nm photodiode 5 Ghz detector dm-10 avalanche photodiode ingaas ghz
Text: 30E D • bM5?S25 002T371 2 ■ T - ty - fO S '- N E C ELECTRONICS INC PHOTO DIODE /_ NDL5500P 1 OOO to 1 600 nm OPTICAL FIBER COM M UNICATIONS
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002T371
NDL5500P
NDL5500P
b42755S
35MHz
HL-50U
IMDL5500P
avalanche photodiode 1550nm sensitivity
avalanche 1550nm photodiode 5 Ghz
detector dm-10
avalanche photodiode ingaas ghz
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MOTOROLA MJW16212
Abstract: MJW16212 MJF16212 MR10150E
Text: b4E D MOTOROLA fci3ti72S5 D0flb431 TCH SEMICONDUCTOR! IMOT? MO TO RO LA SC D IO DE S / O P T O TECHNICAL DATA Advance Information SCANSWITCH M R 10150E M o to ro la P re ferre d D ev ice Power R ectifier for use as a Dam per Diode in High and Very High Resolution Monitors
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fci3ti72S5
D0flb431
MR10150E
MJW16212
MJF16212
MOTOROLA MJW16212
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73B34
Abstract: NDL7511P1 DIODE on B34 NDL7511 NDL7161 7511P
Text: NEC ELECTRONICS INC bEE 5 • L427S5S 0 0 3 7 ^ 7 3 b34 H N E C E PRELIMINARY DATA SHEET M F " / / L A S E R D IO D E M O D U L E N D L 7 5 1 1 P , N P L 7 5 11 P 1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION NDL7511P and NDL7511P1 are 1 310 nm newly developed Multiple Quantum Well (MQW structure pulsed laser diode
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L427S5S
NDL7511P
NDL7511P1
b4E7525
14-pin
NDL7101
NDL7111
NDL7500P
NDL7510P
NDL7501P
73B34
DIODE on B34
NDL7511
NDL7161
7511P
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