DIODE B39 Search Results

DIODE B39 Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

DIODE B39 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BC647 Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645 Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23	Original	PDF	MMBD4148 200MA OT-23 MBR0540 OD-123 1000MA DO-214AC B340A 5245B 225MW BC647 bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
77C7 Abstract: 887c 1r12r Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23	Original	PDF
philips diode PH 33D Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817	Original	PDF	1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
marking A4t sot23 Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE	Original	PDF	1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
KZ3 SOT23 Abstract: No abstract text available Text: BZX84B2V7 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • 2% Tolerance on VZ   350mW Power Dissipation   Zener Voltages from 2.7V - 39V Case: SOT23 Case Material: Molded Plastic “Green” Molding Compound.	Original	PDF	BZX84B2V7 BZX84B39 350mW AEC-Q101 J-STD-020 MIL-STD-202, DS36159 KZ3 SOT23
philips diode PH 33D Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)	Original	PDF	1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
marking A4t sot23 Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)	Original	PDF	1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
5B1 zener diode Abstract: 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12 Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)	Original	PDF	MM3ZB39 OD-323 OD-323 5B1 zener diode 6b2 zener diode zener diode 4B3 B20 zener diode smd diode b13 zener diode b27 b16 zener b36 smd diode zener b27 smd diode code B12
Zener Diode marking b27 Abstract: zener diode marking code B13 zener B13 zener diode b27 Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V	Original	PDF	CMZB12 CMZB53 Zener Diode marking b27 zener diode marking code B13 zener B13 zener diode b27
smd 5b1 Abstract: smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)	Original	PDF	MM3ZB39 OD-323 OD-323 smd 5b1 smd transistor 5B1 5B1 zener diode smd transistor marking ey B20 zener diode planar transistor 5B1 ez 724 zener diode 4B3 B15 diode smd b36 smd diode
zener diode b27 Abstract: zener diode B56 zener Diode B22 B62 zener diode B20 zener diode B20 zener diode glass diode zener B16 glass diode ZENER B18 B10 zener diode bzx79 Text: BZX79 Series Silicon Planar Zener Diode VZ Range 2.4 to 75V Power Dissipation 500mW DO-204AH DO-35 Glass Features • The Zener voltages are graded according to the international E 24 standard. Higher Zener voltages and 1% tolerance available on request.	Original	PDF	BZX79 500mW DO-204AH DO-35 BZX79-B, BZX79-F, BZX79-C. D7/10K 20K/box zener diode b27 zener diode B56 zener Diode B22 B62 zener diode B20 zener diode B20 zener diode glass diode zener B16 glass diode ZENER B18 B10 zener diode
zener diode b27 Abstract: 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey Text: MM3Z2B4~MM3ZB39 ±2% SILICON PLANAR ZENER DIODES FEATURES ● Total power dissipation: max. 200 mW ● Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC)	Original	PDF	MM3ZB39 OD-323 OD-323 zener diode b27 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16 zener smd marking EA smd diode code B12 6b2 zener diode smd transistor marking ey
B20 zener diode Abstract: zener diode b27 diode zener B16 CMZB51 B20 zener diode glass ZENER B18 zener Diode B22 zener B51 b16 zener Zener Diode marking b27 Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V	Original	PDF	CMZB12 CMZB53 B20 zener diode zener diode b27 diode zener B16 CMZB51 B20 zener diode glass ZENER B18 zener Diode B22 zener B51 b16 zener Zener Diode marking b27
Untitled Abstract: No abstract text available Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 ○ Communication, Control and Measurement Equipment ○ Constant Voltage Regulation ○ Transient Suppressors 0.65 ± 0.2 Unit: mm Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V	Original	PDF	CMZB12 CMZB53

KZ2 sot23 Abstract: KZ3 SOT23 diode kz9 zener KZE sot23 part marking b36 diode marking kyb zener b39 Marking B15 B18 SOT23 KY6 sot23 marking B33 diode Text: BZX84B3V0 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • • • ±2% Tolerance on VZ 350mW Power Dissipation Zener Voltages from 3.0V - 39V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2	Original	PDF	BZX84B3V0 BZX84B39 350mW AEC-Q101 J-STD-020 MIL-STD-202, DS36159 KZ2 sot23 KZ3 SOT23 diode kz9 zener KZE sot23 part marking b36 diode marking kyb zener b39 Marking B15 B18 SOT23 KY6 sot23 marking B33 diode
Untitled Abstract: No abstract text available Text: CMZB12~CMZB53 TOSHIBA Zener Diode Silicon Diffused Type CMZB12~CMZB53 Communication, Control and Measurement Equipment Constant Voltage Regulation Transient Suppressors Average power dissipation: P = 1.0 W • Zener voltage: VZ = 12 to 53 V • Suitable for high-density board assembly due to the use of a small	Original	PDF	CMZB12 CMZB53
marking s73 Abstract: No abstract text available Text: BSE D • Û23b320 G01bS72 S « S I P T - o V - I o! Silicon Tuning Diode B B 515 SIEMENS/ SPCL-, SEMICONDS Cathode • For UHF and VHF TV/VTR tuners Type BB515 Ordering code Q62702-B398 Marking white/S Maximum ratings Reverse voltage Forward current 30 20	OCR Scan	PDF	23b320 G01bS72 BB515 Q62702-B398 fl23b320 T-07-19 marking s73
8523S Abstract: diode b63 SENSOR HALL 6847 se MAX 8899 max 8897 IC 6848 8522S AN 8523S 2,7GHz PRESCALER ecl prescaler sip Text: Bipolar Digital ICs • Driver Arrays O utput Breakdown Type No. Functions Input Resistor Voltage <Q VcE SUS) O utput C urrent O utput Clam p N um bers of Diode (mA) Package Circuits No. (V) I.STTL C om patible 3f> 500 No 7 16-DIP(b) B39 DN 8690 D a rlington d riv e r (E m itte r com m on)	OCR Scan	PDF	16-DIP 23-ZIP 6844S 6845S 6846S 6847/S 6B47SE/TE 6848/S 6848SE/TE 8523S diode b63 SENSOR HALL 6847 se MAX 8899 max 8897 IC 6848 8522S AN 8523S 2,7GHz PRESCALER ecl prescaler sip
b14a Abstract: A47AD b14ad B-14-AD B53h Text: BROADBAND SPDT DIODE SWITCH SERIES XB, XL, HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBM operational. Consult factory for high power options. 1 watt average,	OCR Scan	PDF
AN8523S Abstract: diode b63 AN8523 0000B ecl prescaler sip Text: Bipolar Digital ICs • Driver Arrays Function Type No. Input Resistor 0 Output Breakdown Voltage VcE(SUS) Output Current (mA) Output Clamp Diode 500 1.5A 1.5A No Yes No Numbers of Circuits Package No. (V) DN8690 " input active driver (Emitter common) LSTFL Compatible	OCR Scan	PDF	DN8650 DN8690 DN8695 DIP016-P-0300D HZIP023-P-0138 DN6844S DN6845S DN6846S DN6847/S AN8523S diode b63 AN8523 0000B ecl prescaler sip
EVG31-050A Abstract: M201 T151 Pw-50ps b39 transistor Text: EVG31-O5OA 30a — JU L - )U POWER TRANSISTOR MODULE • t t f t : Features • 7 ■ ;- * < ') > ? ? * * - KrtB* • hFEA''fti' • Including Free Wheeling Diode High DC Current Gain Insulated Type ■ ffliâ • Applications • v T 's ? Power Switching	OCR Scan	PDF	EVG31-O5OA E82988 EMl-TS19 l95t/R89 EVG31-050A M201 T151 Pw-50ps b39 transistor
Mbr370 Abstract: MBR390 MBR380 mbr3100 BR3100 Text: MOTOROLA Order this document by MBR370/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR370 MBR380 MBR390 M BR3100 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S tate-of-th e-art geometry features epitaxial construction with oxide passiva	OCR Scan	PDF	MBR370/D Mbr370 MBR390 MBR380 mbr3100 BR3100
MBR370 Abstract: MBR390 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR370 MBR380 MBR390 MBR3100 A x ia l Lead R e c tifiers . . . em ploying the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geom etry features epitaxial construction with oxide passivation and metal	OCR Scan	PDF	MBR370 MBR380 MBR390 MBR3100
TU810 Abstract: No abstract text available Text: 2DI100Z-1200OOA S ± /< 9 — l £ y< 7— f '• Outline Drawings POWER TRANSI STOR MODULE : Features • iS W /± High Voltage • 7 U — ¡¡i'f ij > 9 ¥ ■i • ASO Including Free W heeling Diode Excellent • Sfti&ffi Safe Operating Area Insulated Type	OCR Scan	PDF	2DI100Z-1200OOA) l95t/R TU810

Privacy Settings

DIODE B39 Search Results

DIODE B39 Result Highlights (5)

DIODE B39 Datasheets Context Search

BC647

77C7

philips diode PH 33D

marking A4t sot23

KZ3 SOT23

philips diode PH 33D

marking A4t sot23

5B1 zener diode

Zener Diode marking b27

smd 5b1

zener diode b27

zener diode b27

B20 zener diode

Untitled

KZ2 sot23

Untitled

marking s73

8523S

b14a

AN8523S

EVG31-050A

Mbr370

MBR370

TU810