Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE B16100G Search Results

    DIODE B16100G Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE B16100G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b16100g

    Abstract: b16100 MBR16100CT diode b16100g onsemi 035 diode marking code YW DIODE onsemi Z Diode MBR16100CTG MBR1610
    Text: MBR16100CT SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • • • • • • • • • http://onsemi.com 16 Amps Total 8.0 Amps Per Diode Leg Guard−Ring for Stress Protection


    Original     		PDF MBR16100CT MBR16100CT/D b16100g b16100 MBR16100CT diode b16100g onsemi 035 diode marking code YW DIODE onsemi Z Diode MBR16100CTG MBR1610

    Untitled

    Abstract: No abstract text available
    Text: MBR16100CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature Low Stored Charge Majority Carrier Conduction 16 A Total 8.0 A Per Diode Leg


    Original     		PDF MBR16100CT MBR16100CT/D

    B16100G

    Abstract: diode b16100g dmbr16100ct
    Text: MBR16100CT SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. http://onsemi.com Features • • • • • • • • • 16 Amps Total 8.0 Amps Per Diode Leg Guard−Ring for Stress Protection


    Original     		PDF MBR16100CT MBR16100CT/D B16100G diode b16100g dmbr16100ct

    B16100G

    Abstract: b16100 diode b16100g MBR16100CT MBR16100CTG B16-100
    Text: MBR16100CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature Low Stored Charge Majority Carrier Conduction 16 A Total 8.0 A Per Diode Leg


    Original     		PDF MBR16100CT MBR16100CT/D B16100G b16100 diode b16100g MBR16100CT MBR16100CTG B16-100

    B16100G

    Abstract: b16100 diode b16100g MBR16100CT MBR16100CTG
    Text: MBR16100CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature Low Stored Charge Majority Carrier Conduction 16 A Total 8.0 A Per Diode Leg


    Original     		PDF MBR16100CT MBR16100CT/D B16100G b16100 diode b16100g MBR16100CT MBR16100CTG

    diode b16100g

    Abstract: B16100G b16100
    Text: MBR16100CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature Low Stored Charge Majority Carrier Conduction 16 A Total 8.0 A Per Diode Leg


    Original     		PDF MBR16100CT MBR16100CT/D diode b16100g B16100G b16100