1653A
Abstract: 1655A transformador corriente de 110 a 24 volts transformador transformador corriente de 110 a 36 volts
Text: INSTRUCTION MANUAL MANUAL DE INSTRUCCIÓN MODELS 1653A & 1655A MODELOS 1653A & 1655A Isolated-Variable AC POWER SUPPLY Aislada, variable FUENTE DE PODER DE AC TEST INSTRUMENT SAFETY WARNING An electrical shock causing 10 milliamps of current to pass through the heart will stop most human heartbeats. Voltage as low as 35
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1740B,
73/23/EEC
93/68/EEC
89/336/EEC
92/68/EEC
1653A
1655A
transformador corriente de 110 a 24 volts
transformador
transformador corriente de 110 a 36 volts
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S3WB60Z
Abstract: No abstract text available
Text: . . . asm&mm sq i p Square In-line Package Bridge Diode 7 A ^> v x S 'f"? Avalancha type tnout/Output in-line Package O U T L IN E DIM ENSIONS S3WBDZ 600V 2.3A • RATINGS A bsolute Maximum R atin g s m i tin Item Symbol Operating Junction Temperature #A.mmw±
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Q05R13
S3WB60Z
S3WB60Z
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423R
Abstract: f423 IR 423
Text: 33 HARRIS IR F F420/421/422/423 IR FF420R/421 R /422R /423R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO-205AF • 1.4A and 1.6A, 450V - 500V • rDS on = 3.0(1 and 4.0fi • Singla Pulsa Avalancha Energy Rated* GATE SOURCE
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F420/421/422/423
FF420R/421
/422R
/423R
O-205AF
IRFF420,
IRFF421,
IRFF422,
IRFF423
IRFF420R,
423R
f423
IR 423
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IR LFN
Abstract: LFN ir D0113 CJ10L 2N7225 IRFM250 2N7225 JANTX 024-S
Text: Data Sheet No. PD-9.554D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM250 SN7SS5 JANTX2N7225 JANTXV2N72S5 N-CHANNEL REF: MIL-S-1S500/5B&] Product Summary 200 Volt, 0.100 Ohm HEXFET The HEXFET® technology is the key to International
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MIL-S-19500/59S]
IRFM2500
IRFM250U
O-254
mil-s-195m
IR LFN
LFN ir
D0113
CJ10L
2N7225
IRFM250
2N7225 JANTX
024-S
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DIODE S 43a
Abstract: IRF1010N
Text: PD - 9.1372A nternational I O R Rectifier IRF1010NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF1010NS • Low-profile through-hole (IRF101ONL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated
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IRF1010NS)
IRF101ONL)
IRF1010NS/L
DIODE S 43a
IRF1010N
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transistor 6cw
Abstract: 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier
Text: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS f IR H 7450 IR H 8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45ft, MEGA RAD HARD HEXFET international Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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IRH7450
IRH845Q
1x106
1x105
IRH7450,
IRH84S0
transistor 6cw
6cw transistor
6CW 60
6CW 62
rover
IRH7450
IRH8450
TO404AA
6CW 75
100 amp silicon controlled rectifier
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 70 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 70 60 V Id 12 A ^DS<on 0.15 £2 Package Ordering Code TO-220 AB C67078-S1334-A2 Maximum Ratings Parameter Symbol Continuous drain current Values
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O-220
C67078-S1334-A2
GPT05155
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diode BYW 66
Abstract: diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60
Text: S^C D I 7 ^ 2 3 7 S G S-THGMSON O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 0 2 2 4 0 f D ^ o î - n ^ HIGH EFFICIENCY
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BYW80150A
Q00S2M5
diode BYW 66
diode P2F
DIODE DO-220
high efficiency fast recovery diode byw
BYW 90
diode BYW 85
BYW 26
8050 2D C
diode BYW
diode BYW 60
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transistor S 8050
Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
Text: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY
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BYWB05Q
130OC
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
transistor S 8050
ggqb2
8A273
BYW60
Diode BYW 56
150TV
diodes byw
transistor 8050 d
diode BYW 60
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24v rectifier j8
Abstract: irp740 IRF71Q
Text: International XQR Rectifier PO 9 .1 5 6 2 IRF9410 PRELIMINARY HEXFET Power M O S FET • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated V pss = 30V
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IRF9410
24v rectifier j8
irp740
IRF71Q
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diode BYW 66
Abstract: by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 SFI6 te 02214 high efficiency fast recovery diode byw diode BYW
Text: S^C D t 7 C12C1237 G G G E E I G fc> S G S— T H O M S O N O T H O M S O N -C S F B V W DIVISION SEMICONDUCTEURS DISCRETS 7 5 _ B . Y — 2 _ _ _ W 7 1 5 A HIGH E FFIC IE N C Y FA ST R E C O V E R Y R E C T IF IE R S SUPERSWITCH R E D R E SS E U R S RA PID ES A H A U T REN D EM EN T
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TRANSISTOR ED203
Abstract: FND10 MAN-3A 2N3980 LA 4301 do ic 4532A free germanium Germanium drift transistor texas instruments LED Display TIL epitaxial mesa
Text: T H E O P T O E L E C T R O N IC S D A T A B O O K Few people in the electronics industry realize that optoelectronics technology has a history which precedes the invention of the integrated circuit. It is also a relatively unknown fact that Texas instruments was a pioneer in the
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1N2175
TRANSISTOR ED203
FND10
MAN-3A
2N3980
LA 4301
do ic 4532A free
germanium
Germanium drift transistor
texas instruments LED Display TIL
epitaxial mesa
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aval
Abstract: No abstract text available
Text: S G S^C S —T H O M S O N O T H O M S O N -C S F B V D W DIVISION SEMICONDUCTEURS DISCRETS 7 C12C1 2 3 7 t 7 5 _ B . Y — G G G E E IG 2 _ _ _ _ W 7 1 5 A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS SUPERSWITCH REDRESSEURS RAPIDES A H A U T RENDEMENT
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CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
aval
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dioda by 238
Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching
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0D00S73
dioda by 238
1xys
1XFM67N10
HiperFET
IXFN50N25
IXFM50N20
IXFM6N90
IXFH40N30
IXFH10N100
IXFH11N100
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Untitled
Abstract: No abstract text available
Text: ill H a r r is U U S E M I C O N D U C T O R 2N7311D, 2N7311R 2N731 1H REGISTRATION PENDING Currently Available as FRL9230 D, R, H . • Radiation Hardened P-Channel Power MOSFETs Decem ber 1992 Package Features • 3A, -200V, RDS(on) > 1.300 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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2N7311D,
2N7311R
2N731
FRL9230
O-205AF
-200V,
100KRAD
1000KRAD
3000KRAD
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k 3919
Abstract: IRFF9230 IRFF9231 IRFF9232 IRFF9233 9231 TU300
Text: SILICONIX INC l&E D « T"Sificor Siliconix J L M • Ö254735 0014Ö45 T ■ 1RFF9230/9231 /Ö232/9233 iiincorporated P-Channel Enhancement Mode Transistors TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS • d S(ON (ft) Id (A) IRFF9230 -200 0.8
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5S4735
1RFF9230/923179232/9233
IRFF9230
IRFF9231
IRFF9232
IRFF9233
SFF92Ã
HFF92!
k 3919
9231
TU300
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marking code KC SMB
Abstract: SMBJ25A marking NX TVS DO-214AA smbj0 SMBJ23 SJ 76 TVS dIODE diode GU do-214aA DIODE UF marking code smb marking mp SMBJ12A
Text: TAIWAN SEMICONDUCTOR SMBJ SERIES 600 Watts Surface Mount Transient Voltage Suppressor S MB/DO-214A A RoHS COM PLIANCE Features_ «• For su rfa ce m ou n te d a p p lica tio n <■ L o w p ro file p a c k a g e B u ilt-in s tra in r e lie f
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SMB/DO-214AA
marking code KC SMB
SMBJ25A
marking NX TVS DO-214AA
smbj0
SMBJ23
SJ 76 TVS dIODE
diode GU do-214aA
DIODE UF marking code
smb marking mp
SMBJ12A
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50n05
Abstract: SMP50N05 SMP60N05 s0n06 smp60n06 60n05 SMP50N06 60N06 50n06 siliconix SMP50N06-18
Text: lêE I SILICONIX INC <MmW C rS • 8254735 0014173 7 ■ SMP60N06/05, SMP50N06/05 ilì c o n ix in c o rp o ra te d N-Channel Enhancement Mode Transistors TO-220AB TOP VIEW PRODUCT SUMMARY o PART NUMBER V BRJDSS SMP60N06 60 0.023 60 SMP60N05 50 0.023 60 SMP50N06
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25473S
GQ14T73
SMP60N06/05,
SMP50N06/05
SMP60N06
SMP60N05
SMP50N06
SMP50N05
O-220AB
60N06
50n05
s0n06
60n05
50n06
siliconix SMP50N06-18
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DIODE 1334 smd
Abstract: TH 2267 HA 13164 B0139 smd diode 1334
Text: PD-2.178A International Rectifier L io R j i s t . s e r i e s q 18 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics 18TQ. Units lF AV Rectangular waveform 18 A 35 to 45 V VRRM ‘fsm 1P " 5 M#*ne 1800
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TJ-125
volombay400-083.
2F3-30-4
Lane03-09A,
S-16212Valllngby1STO
NJ07650.
DIODE 1334 smd
TH 2267
HA 13164
B0139
smd diode 1334
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