DIODE A46
Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Text: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s
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1N4148WS
Abstract: No abstract text available
Text: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C
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1N4148WS=
1N4148WS
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STPSC2006
Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power
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STPSC2006CW
O-247
STPSC2006
STPSC2006CW
silicon carbide diode
STMicroelectronics POWER SWITCHING
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Untitled
Abstract: No abstract text available
Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power
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STPSC2006CW
O-247
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BAS16W
Abstract: MMBD4148W
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate DIODE MMBD4148W/BAS16W SWITCHING DIODE SOT-323 FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance Marking: A2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OT-323
MMBD4148W/BAS16W
OT-323
150mA
MMBD4148W
/BAS16W
BAS16W
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Untitled
Abstract: No abstract text available
Text: STPS20200C Power Schottky diode Datasheet − production data Features Diode 1 • Low forward voltage drop A1 • Very small conduction losses K Diode 2 • Negligible switching losses A2 • Extremely fast switching • Low thermal resistance K • -40°C minimum operating Tj
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STPS20200C
O-220FPAB
STPS20200CFP
O-220AB
STPS20200CT
STPS20200CG-TR
DocID024382
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Q62702-A1031
Abstract: marking code AC sot 323 diode
Text: BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1031
OT-323
Nov-28-1996
Q62702-A1031
marking code AC sot 323 diode
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Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
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STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
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Untitled
Abstract: No abstract text available
Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC12H065C
O-220AB
STPSC12H065CT
DocID024809
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A1030 transistor
Abstract: Q62702-A1030 marking code a4s
Text: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1030
OT-323
Nov-28-1996
A1030 transistor
Q62702-A1030
marking code a4s
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L30 dual diode
Abstract: No abstract text available
Text: STPS20200C Power Schottky diode Datasheet production data Features Diode 1 • Low forward voltage drop A1 Very small conduction losses K Diode 2 Negligible switching losses A2 Extremely fast switching Low thermal resistance K -40°C minimum operating Tj
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STPS20200C
O-220FPAB
STPS20200CFP
O-220AB
STPS20200CT
STPS20200CG-TR
DocID024382
L30 dual diode
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Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
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STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
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Untitled
Abstract: No abstract text available
Text: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC8H065C
O-220AB
STPSC8H065CT
DocID024808
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Q62702-A1051
Abstract: A7S marking code A1051 Q62702A1051
Text: BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications Type Marking Ordering Code Pin Configuration BAV 99W A7s 1=A1 Q62702-A1051 2=C2 Package 3=C1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1051
OT-323
Apr-03-1997
Q62702-A1051
A7S marking code
A1051
Q62702A1051
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OF IGBT BSM 200 GAL 120 DN2 1200V 290A
Abstract: HB 200GAL igbt module bsm 200 AC DC chopper AC - DC chopper
Text: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70
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BSM300GA120DN2
200GAL
C67070-A2301-A70
Nov-24-1997
Sep-21-98
OF IGBT BSM 200 GAL 120 DN2 1200V 290A
HB 200GAL
igbt module bsm 200
AC DC chopper
AC - DC chopper
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Untitled
Abstract: No abstract text available
Text: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70
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BSM300GA120DN2
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diode chopper
Abstract: BSM300GA120DN2 C67070-A2301-A70
Text: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70
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BSM300GA120DN2
200GAL
C67070-A2301-A70
diode chopper
BSM300GA120DN2
C67070-A2301-A70
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200GAR
Abstract: BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70
Text: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70
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BSM300GA120DN2
200GAR
C67070-A2301-A70
200GAR
BSM200GAR120DN2
BSM300GA120DN2
C67070-A2301-A70
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200-GAR
Abstract: 200GAR chopper,diode BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70 AC - DC chopper
Text: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70
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BSM300GA120DN2
200GAR
C67070-A2301-A70
200-GAR
200GAR
chopper,diode
BSM200GAR120DN2
BSM300GA120DN2
C67070-A2301-A70
AC - DC chopper
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200GAR
Abstract: BSM200GAR120DN2 BSM300GA120DN2 C67070-A2301-A70
Text: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70
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BSM300GA120DN2
200GAR
C67070-A2301-A70
200GAR
BSM200GAR120DN2
BSM300GA120DN2
C67070-A2301-A70
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Untitled
Abstract: No abstract text available
Text: BSM 200 GAR 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAR 120 DN2 1200V 290A IC Package Ordering Code HB 200GAR C67070-A2301-A70
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BSM300GA120DN2
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BSM200GAL120DN2
Abstract: BSM300GA120DN2 C67070-A2301-A70 diode chopper
Text: BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Chopper diode like diode of BSM300GA120DN2 • Package with insulated metal base plate Type VCE BSM 200 GAL 120 DN2 1200V 290A IC Package Ordering Code HB 200GAL C67070-A2301-A70
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BSM300GA120DN2
200GAL
C67070-A2301-A70
BSM200GAL120DN2
BSM300GA120DN2
C67070-A2301-A70
diode chopper
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon PIN diode BAP64-05 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF attenuators and switches 1 anode a1 • Low diode capacitance 2 anode (a2) • Low diode forward resistance
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BAP64-05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
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