Untitled
Abstract: No abstract text available
Text: Ordering number : EN*A1001 PN type Photo Diode LA0225CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0225CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm
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A1001
LA0225CS
LA0225CS
A1001-4/4
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transistor c4467
Abstract: mosfet a1694 C4467
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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MT-200
2SA1694/2SC4467
A1694/C4467
2SA1694
2SC4467
2SC4467
2SA1264/2SC3181
MJ2955
transistor c4467
mosfet a1694
C4467
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev A1, Page 1/42 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
D-55294
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DIODE A46
Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
Text: 1996-2012:QuarkCatalogTempNew 9/20/12 3:44 PM Page 1996 INTERCONNECT TEST & MEASUREMENT 25 SEMIPACK Isolated Diode/Diode and Thyristor/Diode Modules SEMIPACK® Isolated Diode/Diode and Single Diode Modules 27 Amp to 700 Amp RoHS SKKD 46/16 Stock No. Mfr.’s
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STPSC2006
Abstract: STPSC2006CW silicon carbide diode STMicroelectronics POWER SWITCHING
Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power
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STPSC2006CW
O-247
STPSC2006
STPSC2006CW
silicon carbide diode
STMicroelectronics POWER SWITCHING
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Untitled
Abstract: No abstract text available
Text: STPSC2006CW 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery A1 ■ Switching behavior independent of temperature A2 ■ Particularly suitable in PFC boost diode function K Description The SiC diode is an ultrahigh performance power
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STPSC2006CW
O-247
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Untitled
Abstract: No abstract text available
Text: BAR 65-03W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communications transmit-receive switch Type Marking Ordering Code BAR 65-03WM/blue Q62702Q62702-A1047 Pin Configuration
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5-03W
65-03WM/blue
Q62702Q62702-A1047
OD-323
Mar-04-1996
100MHz
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Untitled
Abstract: No abstract text available
Text: STPS20200C Power Schottky diode Datasheet − production data Features Diode 1 • Low forward voltage drop A1 • Very small conduction losses K Diode 2 • Negligible switching losses A2 • Extremely fast switching • Low thermal resistance K • -40°C minimum operating Tj
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STPS20200C
O-220FPAB
STPS20200CFP
O-220AB
STPS20200CT
STPS20200CG-TR
DocID024382
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Q62702-A1031
Abstract: marking code AC sot 323 diode
Text: BAW 56W Silicon Switching Diode Array • For high speed switching applications • Common anode Type Marking Ordering Code Pin Configuration BAW 56W A1s 1 = C1 Q62702-A1031 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1031
OT-323
Nov-28-1996
Q62702-A1031
marking code AC sot 323 diode
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Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
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STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
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Untitled
Abstract: No abstract text available
Text: STPSC12H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC12H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC12H065C
O-220AB
STPSC12H065CT
DocID024809
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A1030 transistor
Abstract: Q62702-A1030 marking code a4s
Text: BAV 70W Silicon Switching Diode Array • For high speed switching applications • Common cathode Type Marking Ordering Code Pin Configuration BAV 70W A4s 1 = A1 Q62702-A1030 2 = A2 Package 3 = C1/C2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1030
OT-323
Nov-28-1996
A1030 transistor
Q62702-A1030
marking code a4s
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L30 dual diode
Abstract: No abstract text available
Text: STPS20200C Power Schottky diode Datasheet production data Features Diode 1 • Low forward voltage drop A1 Very small conduction losses K Diode 2 Negligible switching losses A2 Extremely fast switching Low thermal resistance K -40°C minimum operating Tj
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STPS20200C
O-220FPAB
STPS20200CFP
O-220AB
STPS20200CT
STPS20200CG-TR
DocID024382
L30 dual diode
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Untitled
Abstract: No abstract text available
Text: STPSC16H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC16H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band-gap material
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STPSC16H065C
O-220AB
STPSC16H065CT
DocID024810
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Q62702-A1051
Abstract: A7S marking code A1051 Q62702A1051
Text: BAV 99W Silicon Switching Diode Array • Connected in series • For high speed switching applications Type Marking Ordering Code Pin Configuration BAV 99W A7s 1=A1 Q62702-A1051 2=C2 Package 3=C1/A2 SOT-323 Maximum Ratings per Diode Parameter Symbol Diode reverse voltage
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Q62702-A1051
OT-323
Apr-03-1997
Q62702-A1051
A7S marking code
A1051
Q62702A1051
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Untitled
Abstract: No abstract text available
Text: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 1 K (2) A2 (3) A2 A1 K TO-220AB STPSC20H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material
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STPSC20H065C
O-220AB
STPSC20H065CT
DocID023605
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chip Marking 3A3
Abstract: Diode BGX50A BGX50A VPS05178
Text: BGX50A Silicon Switching Diode Array 3 Bridge configuration High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage
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BGX50A
VPS05178
EHA00007
OT143
EHB00147
EHB00148
Jul-31-2001
EHB00149
chip Marking 3A3
Diode BGX50A
BGX50A
VPS05178
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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BAS70L
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring
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M3D891
BAS70L
OD882
MDB391
SCA75
613514/01/pp8
BAS70L
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1PS10SB63
Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW 1PS10SB63 Schottky barrier diode Product specification 2003 Aug 20 Philips Semiconductors Product specification Schottky barrier diode 1PS10SB63 FEATURES DESCRIPTION • Very low diode capacitance An epitaxial Schottky barrier diode encapsulated in a
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M3D891
1PS10SB63
OD882
MDB391
SCA75
613514/01/pp7
1PS10SB63
MARKING S4 diode schottky
MLE118
S4 DIODE schottky
Schottky barrier sot-23 Marking s4
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon PIN diode BAP64-05 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION • RF resistor for RF attenuators and switches 1 anode a1 • Low diode capacitance 2 anode (a2) • Low diode forward resistance
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BAP64-05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAV 70S Silicon Switching Diode Array Type Marking Ordering Gode BAV 70S A4s Pin Configuration Q62702-A1097 1/4=A1 2/5=A2 Package 3/6=C1/2 SOT-363 Maximum Ratings per Diode Symbol Parameter Values 70 Diode reverse voltage Peak reverse voltage Forward current
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Q62702-A1097
OT-363
40mmm
535bQ5
aH35fc
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1N4007 ZENER DIODE
Abstract: diode A14A diode st4 diac diode a15a zener db3 zener diode 1n4744 diode zener 1n4002 zener diode 5A zener 400v
Text: GENERAL PRODUCTS PART No. DEVICE TYPE PACKAGE DESCRIPTION ASY TRIGGER T098 VS1 - 14/18 VOLTS, VS2 - 7/9 VOLTS, SWITCHING CURRENT 80 mA. DIAC DIAC DIAC DIAC DIAC DIAC DIAC D035 D035 D035 D 035 D 035 D035 D035 32 40 34 32 35 40 60 DIODE DIODE DIODE DIODE DIODE
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1N4001
1N4002
1N4003
1N4004
1N4005
1N4006
1N4007
1N5400
1N5401
1N5402
1N4007 ZENER DIODE
diode A14A
diode
st4 diac
diode a15a
zener db3
zener diode 1n4744
diode zener 1n4002
zener diode 5A
zener 400v
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