Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B,
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S5295B
S5295G
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95J DIODE TOSHIBA
Abstract: S5295 DIODE 95J S5295B S5295G S5295J
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295B
S5295G
95J DIODE TOSHIBA
S5295
DIODE 95J
S5295J
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95J DIODE TOSHIBA
Abstract: DIODE 95J S5295B S5295G S5295J S5295
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295B
S5295G
95J DIODE TOSHIBA
DIODE 95J
S5295J
S5295
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Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) · Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295B
S5295G
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Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295J
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Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295J
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S5295G
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295J
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S5295G
Abstract: S5295B S5295J 95J DIODE TOSHIBA
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B
S5295G
S5295J
95J DIODE TOSHIBA
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zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
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BCE0001A
BCE0001B
zener diode 1NU 9F
diode 1NU
DLA DIODE TOSHIBA
diode 1NU 7.1
NH5 Diode
Schottky diode TO220 15A 1000V
diode 1NU 5.1
diode 1NU 6F
10lc48
GU 1R5
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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15j100 capacitor
Abstract: W28NT1000 W48NT600 15j100 RETMA RAILS p022h P012H R36W MARKING CODE WM9 12EB70
Text: ACOPIAN PROMISES TO SHIP WITHIN THREE DAYS Acopian P.O. Box 638 Easton, PA 18044-0638 . . . and we keep that promise. For more than 40 years, Acopian has been shipping AC to DC power modules within three days after receipt of an order. During this period, the Acopian line has expanded from
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Acopian Power Supply Model A24H1200
Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Text: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5
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S5295B
Abstract: No abstract text available
Text: TO SH IBA S5295B,S5295G,S5295J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE S5295B, S5295G, S5295J Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295J
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TOSHIBA RECTIFIER
Abstract: s5295g S5295J rectifier 95J DIODE TOSHIBA marking code 95b
Text: TO SH IB A S5295B,S5295G,S5295J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE S5295B, S5295G, S5295J HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY Average Forward Current Repetitive Peak Reverse Voltage • Reverse Recovery Time y&XIIV!UIV! RAT!NG
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295J
TOSHIBA RECTIFIER
S5295J rectifier
95J DIODE TOSHIBA
marking code 95b
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BAS70-07
Abstract: No abstract text available
Text: BAS70-07 SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS • ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE DESCRIPTION Low turn-on and high breakdown voltage diodes
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BAS70-07
OT-143,
BAS70-07
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lt1073 equivalent ic
Abstract: GA10-822k Caddell-Burns 7300 LND-712 cb 7300-12 capacitor 100nf 100v GA10-682K GA10-123k N5818
Text: u vm TECHNOLOGY 1X1073 Micropower DC-DC Converter Adjustable and Fixed 5V, 12V F€ O TU R € S DCSCRIPTIOn • No Design Required ■ Operates at Supply Voltages From 1.0V to 30V ■ Consumes Only 95jxA Supply Current ■ Works in Step-Up or Step-Down Mode
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95jxA
1X1073
LT1073
100mVp-p
LT1073
CTX25-5-52
350ps
CUT-35°
lt1073 equivalent ic
GA10-822k
Caddell-Burns 7300
LND-712
cb 7300-12
capacitor 100nf 100v
GA10-682K
GA10-123k
N5818
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ctx10052-1
Abstract: how to stepup 1.5v to 5v, 12v 2N2369 transistor pulse generator LND-712 GA10-682K Caddell-Burns 7300 473k capacitor 1.5v stepup 220S2 how to stepup 0.5v to 5v
Text: LT1073 / u i m TECHNOLOGY/ M icro p o w e r DC-DC C onve rte r A djustable a n d Fixed 5V, 12V F€ATUR€S D C S C R IP T IO n • ■ ■ ■ ■ The LT1073 is a versatile micropower DC-DC converter. The device requires only three external components to
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LT1073
LT1073
LT1073-5
ctx10052-1
how to stepup 1.5v to 5v, 12v
2N2369 transistor pulse generator
LND-712
GA10-682K
Caddell-Burns 7300
473k capacitor
1.5v stepup
220S2
how to stepup 0.5v to 5v
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LM1808
Abstract: LM1800 TRANSISTOR LM371 ks2 6k MC7812CP LM3026 SN52101AJ transistor bf 175 LM170 Germanium drift transistor
Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communications and consumer oriented circuits to precision instrumentation and computer designs.
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LM741
MIL-M-38510,
M-38510/
10101BCC.
MIL-M-38510
L-M-38510
LM1808
LM1800
TRANSISTOR LM371
ks2 6k
MC7812CP
LM3026
SN52101AJ
transistor bf 175
LM170
Germanium drift transistor
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LM373
Abstract: pin for lm 339 ic LM1805 LM375 LM566 equivalent LX1604G LM3066 lm374 lm567 equivalent LM1820
Text: Introduction Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica tions and consumer-oriented circuits to precision instrumentation and computer designs.
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AM97C11CN
Abstract: AM9711CN LM378 equivalent SVI 3102 b LM1850 National Semiconductor LM2706 320l 78l05 lm1900 SVI 3105 B mc1458cp1 sgs
Text: Edge Index by Function 2 l e i . Voltage Regulators Voltage References Operational Amplifiers/Buffers Instrumentation Amplifiers Voltage Comparators Analog Switches Sample and Hold A to D, D to A 8 Industrial/Automotive/Functional Blocks 9 Audio, Radio and TV Circuits
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Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C T O R -n 74F845 8-B it Transparent Latch General Description Features The ’F845 bus interface latch is designed to eliminate the ex tra packages required to buffer existing latches and provide extra data width for wider address/data paths or buses carry
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74F845
Am29845
74F845SPC
74F845SC
24-Lead
2314-006I
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LM373
Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Text: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica tions and consumer-oriented circuits to precision instrumentation and computer designs.
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92260-Fontenay-Aux-Roses
25956F
HX3866
LM373
MC1303L
LM566 "direct replacement"
transistor BD 540 LYS
MFC6030
LM566 equivalent
LM3039
SN72558P
LM370
SN72741P
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FDK IM 060
Abstract: No abstract text available
Text: U im LTC1066-1 TECHNOLOGY 14-Bit D C A c c u r a t e C lo ck -T u n a b le , 8th O rd e r Elliptic or Linear P h a se Low pass Filter FEATURES DESCRIPTIOfl • DC Gain Linearity: 14 Bits ■ Maximum DC Offset: ±1.5mV ■ DC Offset TempCo: 7|iV/°C ■ Device Fully Tested at fcu t o f f = 80kHz
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14-Bit
80kHz
120kHz
500MH
LTC1066-1
LTC1066-1
18-Lead
FDK IM 060
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MM80C96
Abstract: MM70C95 MM70C97 MM80C95 MM80C97 MM70C96
Text: February 1988 MM70C95/MM80C95, MM70C97/MM80C97 TRI-STATE Hex Buffers MM70C96/MM80C96, MM70C98/MM80C98 TRI-STATE Hex Inverters General Description Features These gates are m onolithic com plem entary MOS CMOS integrated circuits co nstructed w ith N- and P-channel e n
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MM70C95/MM80C95,
MM70C97/MM80C97
MM70C96/MM80C96,
MM70C98/MM80C98
MM70C95/MM80C95
MM70C96/MM80C96
MM70C95/
MM80C95
MM80C96
MM70C95
MM70C97
MM80C97
MM70C96
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