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    DIODE 8638 Search Results

    DIODE 8638 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 8638 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    zener diode RD2.2S

    Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
    Text: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ


    Original     		PDF RD10UJ RD11UJ RD12UJ RD13UJ RD15UJ RD16UJ RD18UJ RD20UJ RD22UJ RD24UJ zener diode RD2.2S RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC 08-Apr-05 BPW17

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC D-74025 30-Mar-06 BPW17

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/Eed 08-Apr-05 BPW17

    Untitled

    Abstract: No abstract text available
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC 18-Jul-08

    BPW17

    Abstract: BPW17N CQY37N
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC 08-Apr-05 BPW17

    CQY37

    Abstract: No abstract text available
    Text: CQY37N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N 2002/95/EC 2002/96/EC D-74025 08-Mar-05 CQY37

    CQY37

    Abstract: No abstract text available
    Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N D-74025 29-Mar-04 CQY37

    Untitled

    Abstract: No abstract text available
    Text: CQY37N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY37N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its clear lens provides a high radiant intensity without external optics.


    Original     		PDF CQY37N CQY37N BPW17N D-74025 05-May-04

    BPW16N

    Abstract: CQY36N
    Text: CQY36N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: CQY36N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N 2002/95/EC 2002/96/EC 08-Apr-05

    BPW16N

    Abstract: CQY36N sr101
    Text: CQY36N GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N D-74025 15-Jul-96 sr101

    BPW16N

    Abstract: CQY36N
    Text: CQY36N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N 2002/95/EC 2002/96/EC D-74025 08-Mar-05

    Untitled

    Abstract: No abstract text available
    Text: CQY36N Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N 2002/95/EC 2002/96/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: CQY36N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N D-74025 05-May-04

    Untitled

    Abstract: No abstract text available
    Text: CQY36N Vishay Telefunken ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N D-74025 20-May-99

    BPW16N

    Abstract: CQY36N
    Text: CQY36N Vishay Telefunken GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N D-74025 20-May-99

    7919

    Abstract: No abstract text available
    Text: CQY36N VISHAY Vishay Semiconductors GaAs Infrared Emitting Diode in Miniature T-¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N D-74025 29-Mar-04 7919

    CQY36

    Abstract: BPW16N CQY36N
    Text: CQY36N Vishay Semiconductors ¾ GaAs Infrared Emitting Diode in Miniature T– Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N CQY36N BPW16N D-74025 20-May-99 CQY36

    LP 8029

    Abstract: CQY 24 DIN 7990 diode 8638 cqy 17 BPW16N CQY36N
    Text: CQY 36 N TELEFUNKEN Semiconductors GaAs Infrared Emitting Diode in Miniature T–¾ Package Description CQY36N is a standard GaAs infrared emitting diode in a miniature top view plastic package. Its flat window provides a wide aperture making it ideal for use with external optics.


    Original     		PDF CQY36N BPW16N D-74025 LP 8029 CQY 24 DIN 7990 diode 8638 cqy 17 BPW16N

    Untitled

    Abstract: No abstract text available
    Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 55°


    Original     		PDF CQY36N BPW16N 2002/95/EC 2002/96/EC CQY36N 2002/95/EC. 2011/65/EU. JS709A

    BPW16N

    Abstract: CQY36N
    Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 55°


    Original     		PDF CQY36N BPW16N 2002/95/EC 2002/96/EC CQY36N 18-Jul-08 BPW16N

    CQY37N

    Abstract: 7922 diode BPW17 Infrared Emitting Diode BPW17N
    Text: CQY37N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : ∅ 1.8 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 12°


    Original     		PDF CQY37N BPW17N 2002/95/EC 2002/96/EC CQY37N 18-Jul-08 7922 diode BPW17 Infrared Emitting Diode BPW17N

    Untitled

    Abstract: No abstract text available
    Text: CQY36N Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • Peak wavelength: p = 950 nm • High reliability • Angle of half intensity:  = ± 55°


    Original     		PDF CQY36N BPW16N 2002/95/EC 2002/96/EC CQY36N 2011/65/EU 2002/95/EC. 2011/65/EU.