Untitled
Abstract: No abstract text available
Text: BAS16WS-V-G www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified • Material categorization: For definitions of compliance www.vishay.com/doc?99912
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BAS16WS-V-G
AEC-Q101
OD-323
18/10K
10K/box
08/3K
15K/box
BAS16WS-V-G-18
BAS16WS-V-G-08
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transistor D 2394
Abstract: HSMP-3880 A0 SOT-23 PIN diode SPICE model sot top marking codes HSMP3880 pin diode agilent marking TR1 SOT-23
Text: Agilent HSMP-3880 Surface Mount RF PIN Switch Diode Data Sheet Features • Diodes Optimized for: Ultra-Low Distortion Switching Description/Applications The HSMP-3880 switching diode is an ultra low distortion device optimized for higher power applications to 1.5 GHz.
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HSMP-3880
OT-23
5988-2502EN
5989-4029EN
transistor D 2394
A0 SOT-23
PIN diode SPICE model
sot top marking codes
HSMP3880
pin diode agilent
marking TR1 SOT-23
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Untitled
Abstract: No abstract text available
Text: BAT46W-G www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • For general purpose applications • This diode features very low turn-on voltage and fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as
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BAT46W-G
AEC-Q101
OD-123
18/10K
10K/box
08/3K
15K/box
BAT46W
2002/95/EC.
2002/95/EC
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TSHF5400
Abstract: No abstract text available
Text: TSHF5400 High-Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description TSHF5400 is a high-speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of
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TSHF5400
TSHF5400
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TSHF5400
Abstract: No abstract text available
Text: TELEFUNKEN Semiconductors TSHF 5400 High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description TSHF 5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of
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KVCF1-8512
Abstract: No abstract text available
Text: VCSEL KVCF1-8512 VCSEL, or Vertical Cavity Surface Emitting Laser, is semiconductor microlaser diode that emits light in a cylindrical beam vertically from the surface of a fabricated wafer. Unit: ㎜ DIMENSIONS Φ5.35 ±0.1 Φ4.66 ±0.05 ±0.1 ±1.0 3.5
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KVCF1-8512
016MAX
850nm
381MAX.
KVCF1-8512
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Hitachi DSA002718
Abstract: No abstract text available
Text: HZM6.8MWA Silicon Planar Zener Diode for Surge Absorb ADE-208-851 Z Rev 0 May 2000 Features • HZM6.8MWA has two devices in a monolithic, and can absorb surge. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information
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ADE-208-851
Hitachi DSA002718
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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Untitled
Abstract: No abstract text available
Text: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RF04UA2DFH Series Standard Fast Recovery Land size figure Unit : mm Dimensions (Unit : mm) 1.9 0.95 0.95 0.35 0.45 1.0 min. 0.45 0.35 2.4 Applications High frequency rectification Features
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AEC-Q101
RF04UA2DFH
R1120A
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Untitled
Abstract: No abstract text available
Text: Data Sheet Super Fast Recovery Diode RF04UA2D Series Standard Fast Recovery Dimensions Unit : mm Land size figure (Unit : mm) 1.9 0.95 0.95 0.35 0.45 1.0 min. 0.45 0.35 2.4 Applications High frequency rectification Features 1)Surface mounting type (TSMD6)
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RF04UA2D
R1120A
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Untitled
Abstract: No abstract text available
Text: PFS7323-7329 HiperPFS-2 Family High Power PFC Controller with Integrated High-Voltage MOSFET and Qspeed™ Diode Key Benefits • Output Power Table Highly integrated for smallest boost PFC form factor Integrated controller and MOSFET in all package options
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PFS7323-7329
EN61000-3-2
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480 diode
Abstract: No abstract text available
Text: Date:- 9th May, 2013 Data Sheet Issue:- A1 Provisional Data Rectifier Diode Types W5139T#420 to W5139T#480 Development Type No.: WX377T#480 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VRRM Repetitive peak reverse voltage, note 1 4200-4800
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W5139T
WX377T
480 diode
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MOSFET FOR 50HZ SWITCHING APPLICATIONS
Abstract: No abstract text available
Text: Ordering number:EN4891 FX851 MOSFET:P-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Pchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward
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EN4891
FX851
FX851
2SJ187
SB07-03P,
FX851]
MOSFET FOR 50HZ SWITCHING APPLICATIONS
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diode in 5401
Abstract: for APD bias high-voltage 104 Ceramic Disc Capacitors 100v
Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEATURES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages
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TIED87,
TIED88,
X10-3
poss75042
SJ4IIL230)
JL3110209)
0L19O)
diode in 5401
for APD bias high-voltage
104 Ceramic Disc Capacitors 100v
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metelics FSCM 59365
Abstract: MSS30 MSS30-248-B20 442-E45 b20 diode FSCM 59365
Text: MSS-30,000 Series Low Barrier Schottky Diode metelics CORPORATION Features Applications • Lo w Rs— 5Q • Mixers: single diode, image reject, image enhancement, ring quad • Lo w NF • Doublers • Available in many configurations • Modulators • Tight batch matching available
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MSS-30
046-CI
046-P55
046-P86
050-C
metelics FSCM 59365
MSS30
MSS30-248-B20
442-E45
b20 diode
FSCM 59365
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diode marking code I5
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode mtm D30L60 OUTLINE Unit I mm Weight 43g Typ Package I ITO-3P 15 600V 30A Date code 5.5 N Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr=150ns Type No. • trr= 150ns toft Polarity • Full Molded
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D30L60
150ns
diode marking code I5
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Untitled
Abstract: No abstract text available
Text: 7 -f> l U tipe Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC20UR Case : ITO -220 200V 5A É lit . # •trr 3 5 n s • 7 JIÆ -JL /K •S R B S m • 3 7 J — m -Y Jb OA. SSBÆ •a«, « s . • Æ tè ü fa RATINGS Absolute Maximum Ratings
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D5LC20UR
DD0343Ã
000343T
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Untitled
Abstract: No abstract text available
Text: '> 3 7 t Schottky Barrier Diode - K Axial Diode OUTLINE DIMENSIONS D1NS6 Case : 0.6 ^ I 2.6 =01 60V 1A i & i a © • T i 15013 o SIE #P h rsm ? J M- D (2 Cathode : Anode ^ Cathode band m j* *}sg]@sr*H2 M arking •S R S S S6 _a 24 -v h ,iii (M) Date code
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0D0316T
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"DIODE" SY 171
Abstract: THZ3R3A05 thz010a10 THZ6R0A10 THZ013A05
Text: ALLEGRO M IC RO SY ST E MS 8514019 S PR A G U E . INC ^3 D • GS0433Ô SEMICONDS/ IC S 00D3bED 93D R ■ 03620 _ ALGR T '- 't /"* DIODE CHIPS ‘THZ’ Series ‘A ’ Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C @ZT mA Max. (m-A)
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GS0433Ô
00D3bED
THZ025A05
THZ025A10
THZ027A05
THZ027A10
THZ028A05
THZ028A10
THZ030A05
THZ030A10
"DIODE" SY 171
THZ3R3A05
thz010a10
THZ6R0A10
THZ013A05
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MFOE
Abstract: No abstract text available
Text: •701 TOX 9001 Gallium Aluminum Arsenide Light Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES This is a high radiance GaAIAs IR LED optimized for fiber optic applications requiring high power and fast response time. ABSOLUTE MAXIMUM RATINGS
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QL190)
953W375)
MFOE
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Untitled
Abstract: No abstract text available
Text: PD - 91682 International IQ R Rectifier IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than
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IRG4PSC71UD
Super-247
O-247
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Untitled
Abstract: No abstract text available
Text: «701 T0X 9005 P-N Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9005 is a 940 nm emitter designed for short distance point to point data transmission and position sensing. Designed to emit near-infrared radiation
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MIL-S-19500,
OX9005TX
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Untitled
Abstract: No abstract text available
Text: BROADBAND SP8T DIODE SWITCH SERIES TB800 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. 50 OHMS. RF Im pedance: RF Power: +20 dBm operational. Consult factory for high power options. DC Requirem ents:
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TB800
MDB1-15SSL
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MIL-L-85762
Abstract: Indicator Lamps "Indicator Lamps" LH8RAPP
Text: Night vision goggle compatible incicator lamps OXLEY NIGHT VISION GOGGLE COMPATIBLE INDICATOR LAMPS. The OXLEY MIL 80 range of military sealed indicator lamps l as now been extended to include light emitting diode indicator lamps whose o jtp u t contains
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600-900nm
MIL-L-85762)
3R006
STRNVG/6/91/CT
STR/LH/8/RAPP/NVG20
MIL-L-85762
Indicator Lamps
"Indicator Lamps"
LH8RAPP
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