Untitled
Abstract: No abstract text available
Text: SML20SIC06C MECHANICAL DATA SILICON CARBIDE SCHOTTKY DIODE 600V 20A Dimensions in mm inches 6.32 (0.249) 6.60 (0.260) 13.59 (0.535) 13.84 (0.545) 1.02 (0.040) 1.27 (0.050) VR (max) 600V VF (typ) 1.5V IF (max) 20A 20.07 (0.790) 20.32 (0.800) 30.35 (1.195)
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SML20SIC06C
reliab10A
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Untitled
Abstract: No abstract text available
Text: LZPF2N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application
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LZPF2N60
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Untitled
Abstract: No abstract text available
Text: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide
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SDT02S60
PG-TO220-2-2.
Q67040-S4511
D02S60
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d02s60
Abstract: D02S60C SDT02S60 D02S P-TO220-2-2
Text: SDT02S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide
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SDT02S60
P-TO220-2-2.
Q67040-S4511
D02S60
d02s60
D02S60C
SDT02S60
D02S
P-TO220-2-2
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d02s60
Abstract: d02s60c PG-TO220-2-2 SDT02S60
Text: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide
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SDT02S60
PG-TO220-2-2.
Q67040-S4511
D02S60
PG-TO-220-2-2
d02s60
d02s60c
PG-TO220-2-2
SDT02S60
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Untitled
Abstract: No abstract text available
Text: LZPF4N60 N-Channel 600V Power MOSFET Features: • Robust high voltage termination • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application
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LZPF4N60
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d02s60
Abstract: No abstract text available
Text: SDT02S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor VRRM 600 V • Switching behavior benchmark Qc 4.6 nC • No reverse recovery IF 2 material - Silicon Carbide
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SDT02S60
PG-TO220-2-2.
Q67040-S4511
D02S60
d02s60
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DIODE 200A 600V schottky
Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
Text: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC00D60SIC2
Q67050-A4201A101
Q67050-A4201A102
L4834A,
DIODE 200A 600V schottky
SWITCHING DIODE 600V 2A
SDP02S60
SDP02s
L4834A
SIDC00D60SIC2
600 V power Schottky silicon carbide diode
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600 V power Schottky silicon carbide diode
Abstract: Schottky diode Die SDT02S60 SIDC05D60SIC3 DSA0037454
Text: SIDC05D60SIC3 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior
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SIDC05D60SIC3
Q67050-A4201A103
600 V power Schottky silicon carbide diode
Schottky diode Die
SDT02S60
SIDC05D60SIC3
DSA0037454
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SDP02S60
Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
Text: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching
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SIDC00D60SIC2
SIDC00D60SIC2
Q67050-A4201sawn
Q67050-A4201unsawn
L4834A,
SDP02S60
SWITCHING DIODE 600V 2A
A102 diode
sdp02s
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DI 380 Transistor
Abstract: SOD15 transistor marking p3 STTA206S diode 400v 2A ultrafast marking t51 transistor p2 marking
Text: STTA206S TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATASHEET MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS : FREEWHEEL OR BOOSTER DIODE
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STTA206S
DI 380 Transistor
SOD15
transistor marking p3
STTA206S
diode 400v 2A ultrafast
marking t51
transistor p2 marking
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STTA206S
Abstract: SMC 4A 400v diode 400v 2A ultrafast DIODE 2A 400V TRANSISTOR 45 P3
Text: STTA206S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA206S
STTA206S
SMC 4A 400v
diode 400v 2A ultrafast
DIODE 2A 400V
TRANSISTOR 45 P3
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STTA206S
Abstract: diode 400v 2A ultrafast
Text: STTA206S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATION: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN
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STTA206S
STTA206S
diode 400v 2A ultrafast
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mosfet 600v
Abstract: STTA206S DU MARKING
Text: STTA206S TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF AV 2A VRRM 600V trr (typ) 20ns VF (max) 1.5V A K FEATURES AND BENEFITS c u d SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA206S
mosfet 600v
STTA206S
DU MARKING
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IRF840
Abstract: ISL9R460S2 TA49408 TB334
Text: ISL9R460S2 May 2001 Data Sheet 4A, 600V Stealth Diode Features itle UF7 3P The ISL9R460S2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9R460S2
ISL9R460S2
IRF840
TA49408
TB334
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STTA106
Abstract: STTA106U diodes STmicroelectronics marking T01 F126 STTA106RL
Text: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA106/U
STTA106U
STTA106
STTA106
STTA106U
diodes STmicroelectronics marking T01
F126
STTA106RL
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R460PF2
Abstract: ISL9R460PF2 TA49408 TB334
Text: ISL9R460PF2 4A, 600V Stealth Diode General Description Features The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery
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ISL9R460PF2
ISL9R460PF2
R460PF2
TA49408
TB334
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diodes STmicroelectronics marking T01
Abstract: STTA106 STTA106U F126 STTA106RL smb 45
Text: STTA106/U TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY
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STTA106/U
STTA106U
STTA106
diodes STmicroelectronics marking T01
STTA106
STTA106U
F126
STTA106RL
smb 45
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Untitled
Abstract: No abstract text available
Text: ISL9R460PF2 4A, 600V Stealth Diode General Description Features The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery
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ISL9R460PF2
ISL9R460PF2
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K460P3
Abstract: K460p TA49408 200a gto preliminary
Text: ISL9K460P3 4A, 600V Stealth Dual Diode General Description Features The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft
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ISL9K460P3
ISL9K460P3
K460P3
K460p
TA49408
200a gto preliminary
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Untitled
Abstract: No abstract text available
Text: ISL9K460P3 4A, 600V Stealth Dual Diode General Description Features The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft
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ISL9K460P3
ISL9K460P3
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Untitled
Abstract: No abstract text available
Text: ISL9K460P3 Data Sheet FINAL DRAFT April 2001 4A, 600V Stealth Dual Diode Features itle UF7 3P The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse
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ISL9K460P3
ISL9K460P3
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Untitled
Abstract: No abstract text available
Text: STTA206S TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 2A V rrm 600V trr (typ) V f (max) 20ns 1.5V FEATURES AND BENEFITS • SPECIFIC TO "FREEWHEEL MODE' OPERATION: FREEWHEEL OR BOOSTER DIODE ■ ULTRA-FAST AND SOFT RECOVERY
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STTA206S
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S11V
Abstract: Schottky diode TO220 15A 1000V 5tuz47 diode diode schottky 1000V 2a lead 5TUZ47 DO-41SS 20GWJ2CZ47 rectifier 5A 1000V DIP 1R5DL41A 20L6P45
Text: 1 NEW PRODUCTS DIGEST High-Breakdown Voltage 400V, 600V , Hlgh-Efficlency Diode (HEP) For prim ary flywheel use (600V) and secodary rectification use (400V) in com pact, high-efficiency switching pow er supplies. 5GLZ47A : V rrm = 4 0 0 V , IF(av) = 5A, trr« 5 n s
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5GLZ47A
5JLZ47
1DL41A
1DL42A
1R5DL41A
3DL41A
DO-41S
DO-15L
S11V
Schottky diode TO220 15A 1000V
5tuz47 diode
diode schottky 1000V 2a lead
5TUZ47
DO-41SS
20GWJ2CZ47
rectifier 5A 1000V DIP
20L6P45
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