schottky diode FIT
Abstract: 74621 diode 5818 FIT rate failure rate
Text: Silicon Technology Reliability Vishay Siliconix SKYFET N-CHANNEL MOSFET AND SCHOTTKY DIODE ACCELERATED OPERATING LIFE TEST RESULT Sample Size Equivalent Device Hours Failure Rate in FIT 5818 1 264 846 965 0.719 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,
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JESD85,
28-Jul-08
schottky diode FIT
74621
diode 5818
FIT rate
failure rate
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Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V/1.0A SCD5817H THRU SCD5819H FEATURES OUTLINE DIMENSIONS Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency
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SCD5817H
SCD5819H
DO-214AC
SCD5817H
SCD5818H
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Untitled
Abstract: No abstract text available
Text: AMS-173-4 Product Selection Guide HIGH-VOLTAGE ≥60 V PERIPHERAL POWER AND DISPLAY DRIVERS IN ORDER OF 1) OUTPUT VOLTAGE, 2) OUTPUT CURRENT, 3) NUMBER OF DRIVERS Output Ratings* Serial Input Latched Drivers Features Diode Saturated Internal Clamp Outputs Protection
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AMS-173-4
5810-F
5812-F
5818-F
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5810-F
Abstract: 5812-F 5818-F
Text: AMS-173-4 Product Selection Guide HIGH-VOLTAGE ≥60 V PERIPHERAL POWER AND DISPLAY DRIVERS IN ORDER OF 1) OUTPUT VOLTAGE, 2) OUTPUT CURRENT, 3) NUMBER OF DRIVERS Output Ratings* Serial Input Latched Drivers Features Diode Saturated Internal Clamp Outputs Protection
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AMS-173-4
5810-F
5812-F
5818-F
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Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V/1.0A SCD5817H THRU SCD5819H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency
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SCD5817H
SCD5819H
SCD5817H
SCD5818H
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Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V/1.0A SCD5817H THRU SCD5819H FEATURES OUTLINE DIMENSIONS Halogen - free type Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency
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SCD5817H
SCD5819H
SCD-2010
SCD5817H
SCD5818H
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diode 5819
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V/1.0A SCD5817H THRU SCD5819H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency
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SCD5817H
SCD5819H
SCD-2010
SCD5817H
SCD5818H
diode 5819
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Untitled
Abstract: No abstract text available
Text: AMS-173-3 Product Selection Guide POWER SOURCE DRIVERS IN ORDER OF 1 OUTPUT CURRENT, 2) OUTPUT VOLTAGE, 3) NUMBER OF DRIVERS Output Ratings * mA -25 V 60 60 60 # 8 10 12 60 60 20 32 Serial Input — X X X X Features Latched Diode Saturated Drivers Clamp Outputs
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AMS-173-3
5810-F
5812-F
5818-F
-80818-F
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5810-F
Abstract: 5812-F 5818-F
Text: AMS-173-3 Product Selection Guide POWER SOURCE DRIVERS IN ORDER OF 1 OUTPUT CURRENT, 2) OUTPUT VOLTAGE, 3) NUMBER OF DRIVERS Output Ratings * mA -25 V 60 60 60 # 8 10 12 60 60 20 32 Serial Input – X X X X Features Latched Diode Saturated Drivers Clamp Outputs
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AMS-173-3
5810-F
5812-F
5818-F
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2068 dd
Abstract: 6811 6A259 6A595 6B259 6B273 6B595
Text: ALLEGRO POWER INTERFACE APPLICATION GUIDE LED DISPLAY DRIVERS Io Abs Max Vo OUTPUTS SINK/ SOURCE DIODE CLAMP LATCHED DRIVERS SERIAL INPUT r DS on PACKAGE DEVICE 90 mA 90 mA 100 mA 100 mA 100 mA 150mA 150 mA 150 mA 150 mA 350 mA 120 mA 350 mA 17 V 17 V 20 V
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150mA
AMS-180E
2068 dd
6811
6A259
6A595
6B259
6B273
6B595
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2068 DD
Abstract: 6A259 6A595 6B259 6B273 6B595 2068 DD 8 pin dip
Text: ALLEGRO POWER INTERFACE APPLICATION GUIDE LED DISPLAY DRIVERS Io Abs Max Vo OUTPUTS SINK/ SOURCE DIODE CLAMP LATCHED DRIVERS SERIAL INPUT r DS on PACKAGE DEVICE 90 mA 90 mA 100 mA 100 mA 100 mA 150 mA 150 mA 150 mA 350 mA 120 mA 350 mA 17 V 17 V 20 V 30 V
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AMS-180C
2068 DD
6A259
6A595
6B259
6B273
6B595
2068 DD 8 pin dip
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2SD 4206
Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
2SD 4206
str 5707
ky 201 thyristor
scr ky 202
2SD 4206 npn
gi 9444 diode
TRANSISTOR SMD 9014
2SD 5703
STR 6757
TRANSISTOR SMD DK QC
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TRANSISTOR SMD 613
Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
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MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
TRANSISTOR SMD 613
TRANSISTOR SMD DK QC
transistor SMD DK -RN
Sanken Schottky Diode Mi 15
spx 3955
SANKEN power supply
diode zener smd sg 64
transistor SMD DK qs
301 miniature smd transistor
KY smd transistor
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darlington array
Abstract: sourcing darlington array GP-016 ULN7003A cmos logic ic number 4000 EP 7003 BSC 27 flyback
Text: 7003 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Dwg. No. A-9594 Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A is designed for interfacing between TTL or CMOS logic and a variety of peripheral loads. The
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ULN7003A
darlington array
sourcing darlington array
GP-016
cmos logic ic number 4000
EP 7003
BSC 27 flyback
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sourcing darlington array
Abstract: ULN7003A ULN7003LW darlington array ULN7003
Text: Data Sheet 29304.10A 7003 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A AND ULN7003LW are designed for interfacing between TTL or CMOS logic and a variety of
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ULN7003A
ULN7003LW
ULN7003A/LW
compatib-350
sourcing darlington array
darlington array
ULN7003
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GP 015 DIODE
Abstract: ULN7003A ULN7003LW
Text: Data Sheet 29304.10A 7003 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAY 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Integrating seven high-voltage, high-current npn Darlingtons into a monolithic power array, the ULN7003A AND ULN7003LW are designed for interfacing between TTL or CMOS logic and a variety of
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ULN7003A
ULN7003LW
ULN7003A/LW
GP 015 DIODE
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Zener Diode 4148
Abstract: zener T 4148 T 4148 zener ZENER diode t 4148 ZENER 4148 1N914 SOT-23 v 4148 zener diode diode t 4148 zener diode 4148 code diode 4148 sot-23
Text: 02 &J 02E 00432 1989963 CENTRAL SEMICONDUCTOR 0Q00435 pe| 7 | T -2 3 ~ 0 $ - SMD WÊÈÊSSÊÊiÊÊÈâm eentsvsi ssmieonsBwefior sepp. Centres! gs^ ieoiï^ yetai”e@rp. Sx •‘¿¿ri6 SURFACE MOUNTED DEVICES DIODE: SOT-23, SOT-143, S0D-80 ZENER DIODE: SOT-23, S0D-80
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OT-23,
OT-143,
S0D-80
OT-143
OT-89
OT-23
BAS28
Zener Diode 4148
zener T 4148
T 4148 zener
ZENER diode t 4148
ZENER 4148
1N914 SOT-23
v 4148 zener diode
diode t 4148
zener diode 4148 code
diode 4148 sot-23
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA A xial Lead R ectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,
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1N5817/D
1N5817
1N5818
1N5819
1N5819
D0-41
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MBR140P
Abstract: mbr130p MBR120P BR115P MBR115P 1N5817-19 J581 5819m
Text: 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA A X I A L LEAD RECTIF IERS . . . em ploying the S c h o ttk y Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry construction w ith oxide SCH OTTKY BARRIE R
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1N5817
MBR115P
1N5818
MBR120P
1N5819
MBR130P
MBR140P
BR130P
BR115P
MBR140P
1N5817-19
J581
5819m
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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LCD01
TELEVISION EHT TRANSFORMERS
BYW96E PH
smd code Z9P
germanium transistor
BY527
EQUIVALENT BYD33D
BAX12
BB212
BB515
BBY31
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ph 4148 diode
Abstract: Diode ph 4148 diode f 4148 Diode PH 13D s130 diode pj 77 diode pj 33 DIODE PJ 57 PJ 74 DIODE
Text: ANALO G DEVICES Micropower Low Cost Fixed 3.3 V, 5 V, 12 V and Adjustable DC-to- DCConverter ADP1109A FEATURES Operates at Supply Voltages 2 V to 9 V Fixed 3.3 V, 5 V, 12 V and Adjustable O utput M inim um External Com ponents Required Ground Current: 460 |jlA
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ADP1109A
ADP1109A
ph 4148 diode
Diode ph 4148
diode f 4148
Diode PH 13D
s130
diode pj 77
diode pj 33
DIODE PJ 57
PJ 74 DIODE
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1N4148 signal diode
Abstract: P11091 bat54 ms dam
Text: A N A LO G D EVIC ES Micropovuer Low Cost Fixed 3.3 V, 5 V, 12 V and Adjustable DC-to- DC Converter ADP1109 FEATURES Operates at Supply Voltages 2 V to 12 V Fixed 3.3 V, 5 V, 12 V and A djustable O utput M inim um External Com ponents Required Ground Current: 3 2 0 |jlA
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ADP1109
1N4148 signal diode
P11091
bat54 ms dam
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Untitled
Abstract: No abstract text available
Text: ANALO G D E V IC E S Micropower, Step-Up/Step-Down Switching Regulator; Adjustable and Fixed 3.3 V, 5 V, 12 V ADP1110 FEATURES Operates at Supply V oltages From 1.0 V to 30 V Step-U p or Step-Dow n Mode M inim al External Components Required Low -Battery Detector
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ADP1110
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