hc4-dc12v
Abstract: HC4-DC24V HC2-DC24V HC2-SS-K HC3-DC24V HC3-DC6V-D-F nichifu HC4-DC24V-D HC1-DC12V HC2-L-DC24V-D-F
Text: HC Has built-in diode to absorb surge For use in semiconductor circuits HC RELAY WITH DIODE TYPE FOR DC FEATURES 1. The built-in diode absorbs surge voltage arising when the coil goes to the off state (for DC type). Diode characteristics; Reverse breakdown voltage: 1,000V,
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25Y-3N,
25Y-3S
25-3X,
1071-A
25-3S
25-3TA
25-M3
hc4-dc12v
HC4-DC24V
HC2-DC24V
HC2-SS-K
HC3-DC24V
HC3-DC6V-D-F
nichifu
HC4-DC24V-D
HC1-DC12V
HC2-L-DC24V-D-F
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Untitled
Abstract: No abstract text available
Text: JANUARY 1996 DSF21035SV ADVANCE ENGINEERING DATA DS4176-1.3 DSF21035SV FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 3500V IF AV 3000A IFSM 20000A Qr 1500µC trr 6.0µs • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers. FEATURES
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DSF21035SV
DS4176-1
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
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em 518 diode
Abstract: em 513 diode diode em 513 diode 1600 rectifier
Text: EM 513, EM 516, EM 518 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,2 Axial lead diode Standard silicon rectifier diodes EM 513, EM 516, EM 518 Forward Current: 1 A
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Untitled
Abstract: No abstract text available
Text: SEPTEMBER 1996 DSF20060SF ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS VRRM 6000V IF AV 780A IFSM 7800A Qr 1400µC trr 6.5µs • Inverters. ■ Choppers. ■ Inverse Parallel Diode. ■ Freewheel Diode. FEATURES
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DSF20060SF
DS4218-3
DSF20060SF60
DSF20060SF58
DSF20060SF56
DSF20060SF55
CB450.
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78996
Abstract: ci 4538 12v to 220 v ac inverter IC 4538 IC td 4538 GB15RF120K application of IC 4538
Text: PD - 94571 GB15RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
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GB15RF120K
78996
ci 4538
12v to 220 v ac inverter
IC 4538
IC td 4538
GB15RF120K
application of IC 4538
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GB25RF120K
Abstract: No abstract text available
Text: PD - 94552 GB25RF120K IGBT PIM MODULE VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology • Low Diode VF • 10µs Short Circuit Capability • Square RBSOA • HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
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GB25RF120K
indicated360V
GB25RF120K
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792gb170
Abstract: semikron skiip 30 SemiSel 792GB170-373CTV
Text: SKiiP 792GB170-373CTV I. Power section Absolute maximum ratings Symbol Conditions Values IGBT VCES VCC 1 Operating DC link voltage VGES IC Ts = 25 70) °C Inverse diode IF = -IC Ts = 25 (70) °C IFSM Tj = 150 °C, tp = 10ms; sin I2t (Diode) Diode, Tj = 150 °C, 10ms
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792GB170-373CTV
792gb170
semikron skiip 30
SemiSel
792GB170-373CTV
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NDG4216
Abstract: nichia laser diode UTZ-SC0340 Nichia laser
Text: [ UTZ-SC0340_1 ] 2013/01/09 Green Laser Diode NDG4216 Features Outline Dimension • Peak Wavelength: 515nm Unit mm ( + .03 6 5. 1. 6) Φ °C) • Optical Output Power: CW 80mW (@Tc=25° • Can Type: φ 5.6 mm Floating Mounted with Photo Diode and Zener Diode
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UTZ-SC0340
NDG4216
515nm
NDG4216
nichia laser diode
Nichia laser
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80mw laser diode
Abstract: No abstract text available
Text: [ UTZ-SC0340_1 ] 2013/01/09 Green Laser Diode NDG4216 Features Outline Dimension • Peak Wavelength: 515nm Unit mm ( + .03 6 5. 1. 6 ) Φ • Optical Output Power: CW 80mW (@Tc=25C) • Can Type: 5.6 mm Floating Mounted with Photo Diode and Zener Diode
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UTZ-SC0340
NDG4216
515nm
80mw laser diode
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2 Wavelength Laser Diode
Abstract: bookham 940 diode E2 led 940nm high power MU4-940-04
Text: Data Sheet 4W 940nm Uncooled Multimode Laser Diode Module MU4-940-04 The Bookham MU4-940 multimode laser diode module has been designed to provide the high power and reliability required for pumping next generation high power amplifiers for CaTV and FTTx. The pump module includes a multimode laser diode
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940nm
MU4-940-04
MU4-940
900nm
60825-Edition
21CFR
ISO14001
TL9000
ISO9001
2 Wavelength Laser Diode
bookham 940
diode E2
led 940nm high power
MU4-940-04
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Abstract: No abstract text available
Text: Data Sheet 4W 940nm Uncooled Multimode Laser Diode Module MU4-940-01 The Bookham MU4-940 multimode laser diode module has been designed to provide the high power and reliability required for pumping next generation high power amplifiers for CaTV and FTTx The pump module includes a multimode laser diode
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940nm
MU4-940-01
MU4-940
900nm
60825-Edition
900nm
21CFR
BH12829
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Untitled
Abstract: No abstract text available
Text: Photo Diode Product No: MTD5052W Peak Sensitivity Wavelength: 525nm Visible Photo Diode enhanced for the Blue/Green Spectrum FEATURES APPLICATIONS > Hermetically Sealed TO-18 > Optical Analytics > Gold Plated Flat Top Can > Optical Switches > High Reliability
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MTD5052W
525nm
525nm,
525nm.
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australia heat sink
Abstract: Industrial Microphotonics Company ARR04P3600
Text: Industrial Microphotonics Company 3600W QCW Laser Diode Array Part Number: ARR04P3600 Z PACKAGE • Packaged 72 Bar Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
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ARR04P3600
785-1064nm)
------360t
laser2000
B-10/99
australia heat sink
Industrial Microphotonics Company
ARR04P3600
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Untitled
Abstract: No abstract text available
Text: Photo Diode Product No: MTD5052N Peak Sensitivity Wavelength: 525nm Visible Photo Diode enhanced for the Blue/Green Spectrum FEATURES APPLICATIONS > Hermetically Sealed TO-18 > Optical Analytics > Gold Plated Dome Lens Can > Optical Switches > High Reliability
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MTD5052N
525nm
525nm,
525nm.
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DS4231
Abstract: No abstract text available
Text: M ITEL DSF21060SV Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1995 version, DS4231 - 2.2 DS4231 - 2.3 APPLICATIONS • Freewheel Diode. ■ A ntiparallel Diode. ■ Inverters. ■ C hoppers. March 1998 KEY PARAMETERS v RRM 6000V 1690A J f AV
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DS4231
DSF21060SV
6000A
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LIC AGENTS DATA
Abstract: No abstract text available
Text: @ M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 DS4176 - 1 .4 APPLICATIONS • KEY PARAMETERS v RRM 3500V 3000A Jf A V 20000A FSM 1500(lC Qr 6.0|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998
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DS4176
DSF21035SV
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
LIC AGENTS DATA
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TIC 2460
Abstract: LIC AGENTS DATA
Text: @ M ITEL DSF21060SV Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1995 version, DS4231 - 2.2 DS4231 - 2.3 APPLICATIONS • KEY PARAMETERS v RRM 6000V 1690A Jf A V 16000A FSM 1200(lC Qr 6.5|is trr Freewheel Diode. ■ Antiparallel Diode. ■ March 1998
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DS4231
DSF21060SV
6000A
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DSF21060SV55
TIC 2460
LIC AGENTS DATA
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Untitled
Abstract: No abstract text available
Text: M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 D S 4 1 7 6 -1 .4 APPLICATIONS • Freewheel Diode. ■ A ntiparallel Diode. ■ Inverters. ■ C hoppers. March 1998 KEY PARAMETERS v RRM 3500V 3000A Jf AV
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DS4176
DSF21035SV
0000A
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
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Untitled
Abstract: No abstract text available
Text: SË GEC P L E S S E Y JANUARY 1996 SEMI CO NDUC TOR S DS4176-1.3 DSF21035SV FAST RECOVERY DIODE KEY PARAMETERS V RRM 3500V 3000A Jf av 20000A FSM 1500jiC Qr 6.0|is *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ Inverters. ■ Choppers.
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DS4176-1
DSF21035SV
0000A
1500jiC
DSF21035SV35
DSF21035SV34
DSF21035SV32
DSF21035SV30
bfl522
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7030a
Abstract: light sensitive photo diode MTD7030A MTE1050A MTE1100 cms diode diode 518
Text: MARKTECH INTERNATIONAL lflE D • 571*1^55 GQOGBT? Q ■ PHOTO DIODE MTD7030A "T-MI-S3 SILICON PIN PHOTO DIODE ' CATHODE INDEX D — - E H M Tt 7030A is a high sensitive and high speed photo diode with PIN structure. Employment of filtered mold resin for cutting the visible light are suitable for the detectors of
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MTD7030A
800nm
MTE1050A,
MTE1100
7030a
light sensitive photo diode
MTD7030A
MTE1050A
MTE1100
cms diode
diode 518
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Untitled
Abstract: No abstract text available
Text: MARKTECH INTE RNATIONAL lflE D • 571*1^55 GQOGBT? Q ■ PHOTO DIODE MTD7030A T Ml-S 3 SILICON PIN PHOTO DIODE ' CATHODE INDEX D- E- TT MTt 7030A is a high sensitive and high speed photo diode with PIN structure. Employment of filtered mold resin for cutting the visible light are suitable for the detectors of
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MTD7030A
800nm
436-S865
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Untitled
Abstract: No abstract text available
Text: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters.
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DS4231
DSF21060SV
6000A
DSF21060SV60
DSF21060SV59
DSF21060SV58
DSF21060SV57
DSF21060SV56
DSF21060SV55
37bfl522
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Untitled
Abstract: No abstract text available
Text: @ M ITEL DS402ST Rectifier Diode SEMICONDUCTOR Supersedes August 1995 version, DS4183 - 2.2 DS4183 - 2.3 March 1998 KEY PARAMETERS v RRM 1400V 505A Jf AV 5600A FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.
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DS4183
DS402ST
DS402ST14
DS402ST13
DS402ST12
DS402ST11
DS402ST10
DS402ST09
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Untitled
Abstract: No abstract text available
Text: DS502ST M ITEL Rectifier Diode SEMICONDUCTOR Supersedes Novem ber 1997 version, DS4794 - 2.3 DS4794 - 2.4 March 1998 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS v RRM 1400V 540A Jf AV 8000A
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DS4794
DS502ST
DS502ST14
DS502ST13
DS502ST12
DS502ST11
DS502ST10
DS502ST09
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