BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
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OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance
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PDF
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M3D319
BAP63-02
BAP63-02
OD523
OD523)
MAM405
125004/04/pp7
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marking code k1
Abstract: BAP51-02 smd marking KM
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance
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PDF
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M3D319
BAP51-02
OD523
MAM405
OD523)
613514/02/pp8
marking code k1
BAP51-02
smd marking KM
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance
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Original
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PDF
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M3D319
BAP63-02
BAP63-02
OD523
OD523)
MAM405
125004/04/pp7
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smd code marking A8 diode
Abstract: smd diode A8 smd diode code a8
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance
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M3D049
BAP50-03
OD323
MAM406
OD323)
125004/00/02/pp8
smd code marking A8 diode
smd diode A8
smd diode code a8
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BAP51-03
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAP51-03 General purpose PIN diode Product specification Supersedes data of 1999 May 10 1999 Aug 16 Philips Semiconductors Product specification General purpose PIN diode BAP51-03 FEATURES PINNING • Low diode capacitance
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M3D049
BAP51-03
OD323
MAM406
OD323)
115002/03/pp8
BAP51-03
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB10 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS79SB10 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SC-79 ultra small plastic SMD
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M3D319
1PS79SB10
SC-79
MAM403
SC-79)
SCA60
115104/00/01/pp8
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smd schottky diode marking 72
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D049 1PS76SB70 Schottky barrier diode Product specification 1998 Jul 16 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
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M3D049
1PS76SB70
OD323
MAM283
OD323)
SCA60
115104/00/01/pp8
smd schottky diode marking 72
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Marking Code 72
Abstract: smd schottky diode marking 72 B 817 marking code 203 sot323 package
Text: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D102 1PS70SB20 Schottky barrier diode Product specification 2001 Mar 16 Philips Semiconductors Product specification Schottky barrier diode 1PS70SB20 FEATURES DESCRIPTION • Ultra high switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection
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M3D102
1PS70SB20
OT323
SC-70)
MAM394
613514/01/pp8
Marking Code 72
smd schottky diode marking 72
B 817
marking code 203 sot323 package
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1PS59SB20
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D114 1PS59SB20 Schottky barrier diode Product specification 1998 Jul 28 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB20 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode with an integrated guard ring for stress protection
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M3D114
1PS59SB20
SC-59
MLC357
MSA314
SCA60
115104/00/01/pp8
1PS59SB20
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BAS240
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS240 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS240 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.
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M3D154
BAS240
MAM214
OD110)
613514/01/pp8
BAS240
BP317
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BAS270
Abstract: BP317 BAS27
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS270 Schottky barrier diode Product specification 2001 Feb 05 Philips Semiconductors Product specification Schottky barrier diode BAS270 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated guard ring for stress protection.
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M3D154
BAS270
MAM214
OD110)
613514/01/pp8
BAS270
BP317
BAS27
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cm 68006
Abstract: EN6800A ta309 cm 68001 SANYO CP TA TAPE REEL tb 9207
Text: SVC236 Ordering number : EN6800A SANYO Semiconductors DATA SHEET Diffused Junction Type Silicon Diode SVC236 Varactor Diode for FM Receiver Electronic Tuning Use Features • • • • • Low voltage 6.5V Twin type varactor diode with good large-signal characteristics for FM receiver electronic tuning use
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EN6800A
SVC236
SVC236-applied
701ovement,
cm 68006
EN6800A
ta309
cm 68001
SANYO CP TA TAPE REEL
tb 9207
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cm 68001
Abstract: No abstract text available
Text: Ordering number : EN6800A SVC236 Varactor Diode http://onsemi.com Monolithic dual Varactor Diode for FM Tuning 16V, 50nA, CR=5.0, Q=70, CP Features • • • • • Low voltage 6.5V Twin type varactor diode with good large-signal characteristics for FM receiver electronic tuning use
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EN6800A
SVC236
SVC236-applied
cm 68001
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Untitled
Abstract: No abstract text available
Text: SVC236 Ordering number : EN6800A SANYO Semiconductors DATA SHEET Diffused Junction Type Silicon Diode SVC236 Varactor Diode for FM Receiver Electronic Tuning Use Features • • • • • Low voltage 6.5V Twin type varactor diode with good large-signal characteristics for FM receiver electronic tuning use
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SVC236
EN6800A
SVC236-applied
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PX10160E
Abstract: No abstract text available
Text: LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.
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NX5317
NX5317EH)
PL10609EJ01V0DS
PX10160E
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SVC236
Abstract: No abstract text available
Text: Ordering number : ENN6800 SVC236 Diffused Junction Type Silicon Diode SVC236 Varactor Diode for FM Receiver Electronic Tuning Use Features • • • unit : mm 1169A [SVC236] 0.4 3 0.16 0 to 0.1 1.5 2.5 • Package Dimensions Low voltage 6.5V . Twin type varactor diode with good large-signal
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ENN6800
SVC236
SVC236]
SVC236-applied
SVC236
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.
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NX5317
NX5317EH)
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SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
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OCR Scan
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BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
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diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
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OCR Scan
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PDF
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BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
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Untitled
Abstract: No abstract text available
Text: Ordering n um ber: ENN6800 | Diffused Junction Type Silicon Diode SVC236 Varactor Diode for FM Receiver Electronic Tuning Use Features • Low voltage 6.5V . • Twin type varactor diode with good large-signal characteristics for FM receiver electronic tuning use.
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OCR Scan
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PDF
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ENN6800
SVC236
SVC236-applied
SVC236]
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS [Mm SMEET 1PS76SB70 Schottky barrier diode Product specification File under Discrete Semiconductors, SC10 Philips Semiconductors 1998 Jul 16 PHILIPS Philips Semiconductors Product specification Schottky barrier diode 1PS76SB70 FEATURES
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OCR Scan
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PDF
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1PS76SB70
1PS76SB70
SCA60
115104/00/01/pp8
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