Untitled
Abstract: No abstract text available
Text: Ordering number : EN5865 DL-3039-011 Red Laser Diode DL-3039-011 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3039-011 is 670 nm Typ. index guided AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and short wavelength are achieved by use of a
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EN5865
DL-3039-011
DL-3039-011
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diode 5082-3039
Abstract: No abstract text available
Text: 5082-3039 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: TheASI 5082-3039 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS IF 100 mA VR 150 V PDISS 250 mW @ TA = 25 °C TJ -65 °C to +200 °C
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EN4552
Abstract: 2SA1898 FP106
Text: Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.
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EN4552
FP106
FP106
2SA1898
SB1005C.
FP106]
EN4552
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2SA1898
Abstract: FP106 MARKING 106
Text: Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.
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EN4552
FP106
FP106
2SA1898
SB1005C.
FP106]
MARKING 106
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Untitled
Abstract: No abstract text available
Text: RED LASER DIODE DL-3039-011 Ver.3 Apr. 1999 Features Package • Short wavelength : 670 nm Typ. • Low threshold current : Ith = 30 mA (Typ.) • High operating temperature : 5 mW at 60°C Tolerance : ± 0.2 (Unit : mm) ø9.0 - 0.03 ø5.35 ø4.75± 0.15
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DL-3039-011
Cur039-011
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Untitled
Abstract: No abstract text available
Text: 5082-3039 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 150 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.25 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.25pò Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m
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HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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diode 5082-3077
Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Text: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications
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1N5719,
1N5767,
IN5719
5082-xxxx
5082-xxxx
1N5712
5967-5812E
5968-7182E
diode 5082-3077
IN5719
1N5767
5082-3039
diode 5082-3080
1N5 diode
1N5719
F 5082
1N5712
RS-296-D
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1N5767
Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers,
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5989-3339EN
1N5767
DIODE T25
in5719
1nxxxx diode
1N5712
1N5719
RS-296-D
digital phase shifters
1N5 diode
5082-XXXX
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in5719
Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
Text: Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features • Low Harmonic Distortion • Large Dynamic Range Description/Applications These general purpose switching
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1N5719,
1N5767,
5082-3xxx/
1N57xx
5968-7182E
5989-3339EN
in5719
DIODE T25
5082-XXXX
5082-3001
1N5719
diode 5082-3077
diode 5082- 3039
5082-3080
1N57xx
1Nxx
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1N5767
Abstract: IN5719 1nxxxx diode 5082-XXXX
Text: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF
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1N5719,
1N5767,
1N5712
5082-3xxx
T25/1N57xx
1N57xx
5082-3xxx/
1N57xx
5968-7182EN
1N5767
IN5719
1nxxxx diode
5082-XXXX
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1N5767
Abstract: No abstract text available
Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features
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1N5719,
1N5767,
IN5767
1N5767
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DL-3039-011
Abstract: No abstract text available
Text: Ordering number : EN5865 Red Laser Diode D L-3039-011 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3039-011 is 670 nm Typ. index guided AIGalnP laser diode with low threshold current and high operating temperature. The low threshold current and short wavelength are achieved by use of a
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EN5865
DL-3039-011
DL-3039-011
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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zener diode 1N PH 48
Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:
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BZX83
BZX97
BZX98
BZY97
BZD10
BZW22
BZV40
500mW
DO-35
zener diode 1N PH 48
zener diode 1N PH 53
1N3020-1
Diodo zener W
diodo zener C 18 ph
1N1743
diode ziner
1N4202
ST 41 Diodo Zener
1N32B
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3041B
Abstract: zener diode JEDEC 1N 3031B zener diode 1n IN3043B
Text: 1N 3016B thru 1N 3 0 5 1 B / Micmemi Corp. P The diode experts / SANTA ANA, CA SCOTTSDALE, A 2 / F o r m o re in fo rm a tio n call: ' 6 0 2 941-6300 FEATURES SILICON 1 WATT ZENER DIODES • Z E N E R V O LTA G E RANGE: 6.8V TO 200V • 1N3016B THROUGH 1N3051B HAVE JAN, JA N T X , and JA N T X V Q U A LIFICA TIO N S
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3016B
1N3016B
1N3051B
MlL-S-19500/115
S1N3016B
S1N3051B
3041B
zener diode JEDEC 1N
3031B
zener diode 1n
IN3043B
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IN3027B
Abstract: IN3048B IN3034B diode 1N3048b ZENER 1 WATT 6.8V in3020b in3022b in3033b 1N3020B 1N3016B
Text: 1N 3016B thru 1 N 3 0 5 1B Microlsemi Corp. ' The diode experts SA NTA A NA, CA SCOTTSDA J.E, A Z / F o r m ore in fo rm atio n call: 602 9 4 I-6 3 0 0 FEATURES • ZENER VO LTA G E RANGE: 6.8 V TO 200V • 1N3016B TH RO UG H 1N3051B H A VE JA N , JA N T X , and J A N T X V Q U A L IF IC A T IO N S
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1N3016B
1N3051B
94I-6300
1N3016B
1N3051B
MIL-S-19500/115
S1N3016B
S1N3051B
IN3027B
IN3048B
IN3034B
diode 1N3048b
ZENER 1 WATT 6.8V
in3020b
in3022b
in3033b
1N3020B
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IN5767
Abstract: HP 5082-3081 HPND-4165 EN 4165 5082-3042 1N5719 1N5767 HPND-4166 IN5719 RS-296-D
Text: PIN DIODES FOR RF SWITCHING AND ATTENUATING 1N5719 IN5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080 5082-3081 5082-3168/88 5082-3379 HPNO-4165/66 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT
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1N5719
1N5767
HPND-4165/66
HPND-4166.
IN5767
HP 5082-3081
HPND-4165
EN 4165
5082-3042
HPND-4166
IN5719
RS-296-D
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AV 2075 ANTENNA
Abstract: TXV-3039 tt 2074
Text: HEWLETT-PACKARDn C N PN TS Sfi DE I 4 4 4 7 S A 4 O D O S ^ 11] 4 |~~ 4 4 4 75 84 H E WL ETT-PACKARD» CMPNTS m HIGH RELIABILITY PIN DIODES FOR RF SWITCHING AND ATTENUATING HEW LETT PACKARD DJ-bl'lS 58C 02949 Generic 5082-3001, -3002, -3039 and -3077 TX-3001/2
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TX-3001/2
TXB-3001/2
TXV-3001/2
TXVB-3001/2
TX-3039
TXB-3039
TXV-3039
TXVB-3039
TX-3077
TXB-3077
AV 2075 ANTENNA
tt 2074
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bbc ds diodes DS 1,8
Abstract: BBC DSA 0,9 14 A BBC DSA 0.9 bbc ds diodes bbc ds diodes DS 1,8 04 A diode bbc ds 1.8 bbc ds 17 bbc dsd 17 BBC DSA 42 bbc ds diodes DS 22
Text: BBC Technical Data Silicon-Semiconductor ' Components BR0” Printed order nr. Rectifier-Diodes D G H s 30392 E Diodes are e le ctric devices which con du ct current in one directio n i.e. offer a low resistance, w hile blocking i.e. offering a high resistance, in the reverse direction.
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--330--i
p-790â
D-6840
bbc ds diodes DS 1,8
BBC DSA 0,9 14 A
BBC DSA 0.9
bbc ds diodes
bbc ds diodes DS 1,8 04 A
diode bbc ds 1.8
bbc ds 17
bbc dsd 17
BBC DSA 42
bbc ds diodes DS 22
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