Untitled
Abstract: No abstract text available
Text: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,
|
Original
|
UGF16085
661GHz,
16QAM,
UGF16085
|
PDF
|
1661m
Abstract: transistor 1661 equivalent Cree Microwave TANT-E UGF16085 85-W 85w sot23
Text: UGF16085 85W,1.661GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed specially for satellite communication applications in frequency range from 1626 to 1661 MHz. Rated with a minimum output power of 85W. This device is ideal for 16QAM, TDMA,
|
Original
|
UGF16085
661GHz,
16QAM,
85Whorized
UGF16085
1661m
transistor 1661 equivalent
Cree Microwave
TANT-E
85-W
85w sot23
|
PDF
|
SONY APS 252 power supply
Abstract: 8 pin ic 9435A SONY APS 283 SONY APS 252 IRF 9460 SONY APS 254 SONY APS 283 power supply transformer 18-0-18 step down transformer 12-0-12 MPSA06 fairchild transistor
Text: Power−Supply Cookbook Maxim Power Supply Cookbook Compiled: November 2010 Available at: http://www.maxim−ic.com/cookbook/ Maxim has developed power supplies for a wide range of applications. Choose the specifications that most closely meet your needs. Then view a circuit design, complete with schematic diagram and
|
Original
|
CDRH6D28-100
MAX1701
100uF
100pF
560pF
NDC632P
QS03L
220uF
SONY APS 252 power supply
8 pin ic 9435A
SONY APS 283
SONY APS 252
IRF 9460
SONY APS 254
SONY APS 283 power supply
transformer 18-0-18
step down transformer 12-0-12
MPSA06 fairchild transistor
|
PDF
|
Schottky Diode 5V 6A
Abstract: Schottky Diode 40V 6A 1k ohm resistor FDS6690A resistor 15k 15k resistor resistor r7 1K 10MV1200AX capacitors 22nf 0805 10V CAPACITOR X7R 4.7UF
Text: C3 4.7uF 10V +5V INPUT C5 1200uF 10V MV-AX D1 CMPSH-3 9 R1 15k C1 22nF 2 16 VP 15 VL BST ILIM COMP DH LX DL +5V GND 11 C4 0.1uF R3 4.7 R4 4.7 10 OUT 1 POK 3 R5 10.0k FB 4 B2 5 FB2 6 +1.24V B3 FB3 7 R7 220 C9 330pF R8 22.1k R9 22.1k +5V C8 1uF 10V Q3 CMPT 3906
|
Original
|
1200uF
330pF
QS03L
FDS6690A
DO5022P
MAX1864T
1000pF
Schottky Diode 5V 6A
Schottky Diode 40V 6A
1k ohm resistor
FDS6690A
resistor 15k
15k resistor
resistor r7 1K
10MV1200AX
capacitors 22nf
0805 10V CAPACITOR X7R 4.7UF
|
PDF
|
MAX1684
Abstract: MAX1684EEE MAX1685 MAX1685EEE MAX1692
Text: 19-1454; Rev 1; 11/99 ANUAL N KIT M EET IO T A U EVAL TA SH WS DA FOLLO Low-Noise, 14V Input, 1A, PWM Step-Down Converters Both devices are available in a space-saving 16-QSOP package. An evaluation kit is also available to help speed designs. For a similar device in a 10-pin µMAX
|
Original
|
16-QSOP
10-pin
MAX1692
300kHz
MAX1684)
600kHz
MAX1685)
MAX1684/MAX1685
MAX1684
MAX1684EEE
MAX1685
MAX1685EEE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STD1NB80-1 N - CHANNEL 800V - 16Q - 1 A - IPAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE STD1 NB80-1 • . . . . V d ss R DS on Id 800 V < 20 0. 1 A TYPICAL R D S (on) = 1 6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES
|
OCR Scan
|
STD1NB80-1
NB80-1
O-251
|
PDF
|
MOSFET, 4688
Abstract: diode 22 16Q MOSFET 800V 15A
Text: SSS2N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVqss ~ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 p A Max. @ VDS = 800V
|
OCR Scan
|
SSS2N80A
MOSFET, 4688
diode 22 16Q
MOSFET 800V 15A
|
PDF
|
bvn 10
Abstract: No abstract text available
Text: SSW /D N 80A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 M A M ax @ VOS = 800V Low Rosjon, : 4.688 Q (Typ.) ^DS(on) = 6 .0 Q .
|
OCR Scan
|
SSW/I2N80A
bvn 10
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSP2N80A Advanced Power MOSFET FEATURES B V Dss = 800 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 m A M ax. @ B Low Rqs(on) ' 4.688 £1 (Typ.)
|
OCR Scan
|
SSP2N80A
O-220
|
PDF
|
metelics FSCM 59365
Abstract: No abstract text available
Text: I MSS-40,000 Series Medium Barrier Schottky Diode metelics CORPORATION Features Applications • Low Rs — 5Î2 • Low NF Mixers: single diode, image reject, image enhancement, ring quad • Broad optimum L.O. pow er range Doublers • Available in many configurations
|
OCR Scan
|
MSS-40
SS-40
045-C
045-P55
045-P86
048-C
metelics FSCM 59365
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International IQR Rectifier preliminary_IR F 7 3 4 3 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSU2N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |JA M ax. @ VD8 = 800V
|
OCR Scan
|
SSU2N80A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSP 318S In fin e o n technologies SIPMOS Small-Signal-Transistor Features Product Summary • N channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 60 ^DS V ^bs on 0.09 n b 2.6
|
OCR Scan
|
BSP318S
OT-223
Q67000-S127
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
|
PDF
|
SSS2N90A
Abstract: 5V 2A MOSFET N-channel
Text: SSS2N90A Advanced Power MOSFET FEATURES ~ 900 V ^ D S on = 7.0 Q. II Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 iiA (Max.) @ VDS = 900V Low R ds,oN) : 5 838 Q (Typ.)
|
OCR Scan
|
SSS2N90A
SSS2N90A
5V 2A MOSFET N-channel
|
PDF
|
|
|
MOSFET 900V 2A
Abstract: No abstract text available
Text: SSP2N90A Advanced Power MOSFET FEATURES BV0SS = 900 V • ■ ■ ■ ■ > Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 i-iA Max. @ Vqs = 900V
|
OCR Scan
|
SSP2N90A
O-220
MOSFET 900V 2A
|
PDF
|
d0215
Abstract: No abstract text available
Text: SSP3N90A Advanced Power MOSFET B V q ss - 900 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 t-iA Max. @ VDS= 900V ^DS(on) = 6 .2 Q.
|
OCR Scan
|
SSP3N90A
d0215
|
PDF
|
SSU2N90A
Abstract: No abstract text available
Text: SSU2N90A Advanced Power MOSFET FEATURES ^DSS = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 jjA Max. @ VDS = 900V
|
OCR Scan
|
SSU2N90A
G04Db23
SSU2N90A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSW/I2N90A Advanced Power MOSFET FEATURES B V dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge R DS on = 7 .0 Q . In = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 p A (M a x ) @ V0s = 9OOV
|
OCR Scan
|
SSW/I2N90A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSS3N90A A d van ced Power MOSFET FEATURES bvdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 jJA(Max.) @ VDS= 900V
|
OCR Scan
|
SSS3N90A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSW/I3N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 liA M ax @ VDS= 900V
|
OCR Scan
|
SSW/I3N90A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SSP3N90A A d van ced Power MOSFET FEATURES B V qss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 900V
|
OCR Scan
|
SSP3N90A
0G4D370
003b32fl
O-220
7Tb4142
DD3b33D
|
PDF
|
AL 1450 DV
Abstract: No abstract text available
Text: PD-9.565 B International !k Rectifier IRC630 HEXFET® P o w e r M O S F E T Dynam ic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirem ents V dss - 2 0 0 V ^D S o n - 0 . 4 0 0 lD = 9 .0 A Description
|
OCR Scan
|
IRC630
AL 1450 DV
|
PDF
|
KDR720E
Abstract: ir sence ver 2
Text: S E MI CON D U C T O R KAB3403T T E C H N I C A L DATA BICD 1.INEAR IN T E G R A T E D C IR CU IT White LED Step-Up Converter T h e K A B 3 4 0 3 T is a m o n o lith ic s te p - u p D C /D C c o n v e r te r s p e c if ic a lly d e s ig n e d to d riv e w h ite L E D s w ith a c o n s ta n t c u r re n t fr o m L i-io n c e ll.
|
OCR Scan
|
KAB3403T
10//H
KDR720E
ir sence ver 2
|
PDF
|
cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
|
OCR Scan
|
AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
|
PDF
|
