free IR circuit diagram
Abstract: diode marking DEC forward reverse diagram 1SS356 DIODE MARKING 1M 1SS356 MARKING band switching diode 1ss356 equivalent
Text: 1SS356 Surface Mount Band Switching Diode Band Switching Diode P b Lead Pb -Free 100m AMPERES 35 VOLTS Features: * Low Diode Capacitance : 1.2pF(Max.) * Low Diode Forward Resistance : 0.9Ω(Max.) * Low Reverse Current : IR = 10nA(Max.) * Small outline Surface mount SOD-323 Package
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1SS356
OD-323
OD-323
MIL-STD-202
05-Dec-05
100MHz
free IR circuit diagram
diode marking DEC
forward reverse diagram
1SS356
DIODE MARKING 1M
1SS356 MARKING
band switching diode
1ss356 equivalent
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DIODE 1SS133
Abstract: 1SS133
Text: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters
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1SS133
130mA
DO-34
DO-34
100uA
100mA
to100KHZ
1-Jun-03
DIODE 1SS133
1SS133
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1SS400 Preliminary DIODE SWITCHING DIODE DESCRIPTION The UTC 1SS400 is a switching diode, it uses UTC’s advanced technology to provide customers with high speed switching and low reverse leakage, etc. 1 2 FEATURES SOD-523
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1SS400
1SS400
OD-523
1SS400L-CC2-R
1SS400G-CC2-R
QW-R601-225
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1SS145
Abstract: 1ss144 1SS141 1SS146 1SS147
Text: BL GALAXY ELECTRICAL 1SS141 - 1SS147 SMALL SIGNAL SWITCHING DIODE DO - 35 GLASS FEATURES Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-34 MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode
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1SS141
1SS147
DO-34
DO-35,
1SS141
1SS144
1SS145
1SS145
1ss144
1SS146
1SS147
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100MHZ
Abstract: No abstract text available
Text: 1SS277WT BAND-SWITCHING DIODE Features • Small plastic SMD package • Continuous reverse voltage: max. 35V • continuous forward current:max.100mA • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω. Applications • Low loss band switching in VHF television tuners.
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1SS277WT
100mA
OD-523
100MHZ
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100MHZ
Abstract: No abstract text available
Text: 1SS277WT BAND-SWITCHING DIODE Features • Small plastic SMD package • Continuous reverse voltage: max. 35V • continuous forward current:max.100mA • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω. Applications • Low loss band switching in VHF television tuners.
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1SS277WT
100mA
OD-523
100MHZ
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1SS355 DIODE SWITCHING DIODE DESCRIPTION The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,
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1SS355
1SS355
1SS355L-CB2-R
1SS355G-CB2-R
OD-323
QW-R601-079at
QW-R601-079
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UTC 225
Abstract: 1SS355G-CB2-R 1SS355
Text: UNISONIC TECHNOLOGIES CO., LTD 1SS355 Preliminary DIODE SWITCHING DIODE DESCRIPTION The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,
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1SS355
1SS355
OD-323
1SS355L-CB2-R
1SS355G-CB2-R
QW-R601-079
UTC 225
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1SS355 DIODE SWITCHING DIODE DESCRIPTION The UTC 1SS355 is a switching diode, it uses UTC’s advanced technology to provide the customers with high reliability and ultra small mold type, etc. The UTC 1SS355 is suitable for high speed switching applications,
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1SS355
1SS355
1SS355G-CB2-R
OD-323
QW-R601-079
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-523 Plastic-Encapsulate Diodes 1SS387 High Speed Switching Diode SOD-523 FEATURES Small package MARKING: G Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit
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OD-523
1SS387
OD-523
100mA
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DIODE smd marking A4
Abstract: smd diode A4 smd transistor a4 A CLIPPER CIRCUIT APPLICATIONS 1SS303 marking a4 a4 marking A4 marking diode a4 smd transistor smd A4
Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS303 Features Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.
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1SS303
DIODE smd marking A4
smd diode A4
smd transistor a4
A CLIPPER CIRCUIT APPLICATIONS
1SS303
marking a4
a4 marking
A4 marking diode
a4 smd transistor
smd A4
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1SS265
Abstract: 100MHZ
Text: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions
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1SS265
802JIA
Fax0755-8324
100MHZ,
1SS265
100MHZ
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Untitled
Abstract: No abstract text available
Text: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions
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1SS265
1-Jan-2006
100MHZ,
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1SS265
Abstract: No abstract text available
Text: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions
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1SS265
1-Nov-2006
100MHZ,
DO-34
1SS265
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1SS265
Abstract: No abstract text available
Text: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions
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1SS265
1-Sep-2009
100MHZ,
DO-34
1SS265
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1SS265
Abstract: 100MHZ
Text: 1SS265 Band switching diode Features 1. Low differential forward resistance 2. Low diode capacitance 3. High reverse impedance Applications Band switching in VHF-tuners Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions
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1SS265
100MHZ,
1SS265
100MHZ
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1SS399
Abstract: No abstract text available
Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance
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1SS399
SC-61
10mstransportation
1SS399
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SC61 equivalent
Abstract: TOSHIBA DIODE 1SS399 sc61 SC-61 EIAJ
Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5 s (typ.) Small total capacitance
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1SS399
SC-61
100mA
SC61 equivalent
TOSHIBA DIODE
1SS399
sc61
SC-61 EIAJ
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s31 schottky diode
Abstract: 1SS357
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode 1SS357 Schottky Diodes FEATURES z z Small Package Low VF, low IR MAKING: S31 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits
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OD-323
1SS357
100mA
s31 schottky diode
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S4 DIODE schottky
Abstract: MARKING S4 diode schottky s4 schottky diode DIODE marking S4 sod marking code s4 diode sod-523 S4 1SS389 1ss389
Text: 1SS389 Schottky Barrier Diode SOD-523 Features Low forward voltage. Small package. Applications Dimensions in inches and millimeters Schottky diode in surface mounted circuits. Ordering Information Type No. Marking 1SS389 S4 Package Code SOD-523
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1SS389
OD-523
1SS389
100mA
S4 DIODE schottky
MARKING S4 diode schottky
s4 schottky diode
DIODE marking S4 sod
marking code s4 diode sod-523
S4 1SS389
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1SS397
Abstract: No abstract text available
Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching Applications Low forward voltage : VF = 1.0V typ. High voltage : VR = 400V (min.) Unit: mm Fast reverse recovery time : trr = 0.5µs (typ.) Small total capacitance
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1SS397
SC-70
1SS397
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diode Z47
Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352
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HN2D01FU
HN2D02FU
OT-23MOD)
02CZ5
diode Z47
z43 diode
Z5.6
Z3.3
S360 DIODE
diode Z27
S368
diode zener z6
1s diode
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1SS98
Abstract: NEC DO-35
Text: NEC MIXER DIODE •KTHON DEVICE 1SS98 UHF DETECTOR, MIXER SILICON EPITAXIAL SCHOTTKY BARRIER DIODE DESCRIPTION AND APPLICATIONS FEATURES The 1SS98 is silicon epitaxial schottky barrier diode, espe • Small size glass package. DO-35 TYPE cially designed for mixing, log or A-D converting, video de
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1SS98
1SS98
DO-35
DO-35
NEC DO-35
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triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
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1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
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