Untitled
Abstract: No abstract text available
Text: 1N4454 Vishay Semiconductors formerly General Semiconductor Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g
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1N4454
DO-204AH
DO-35
150mA
F2/10K
50K/box
F3/10K
50K/box
junct25
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Untitled
Abstract: No abstract text available
Text: 1N4454 Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: F2/10K per Ammo tape (52mm), 50K/box
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1N4454
150mA
DO-204AH
DO-35
F2/10K
50K/box
F3/10K
50K/box
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Untitled
Abstract: No abstract text available
Text: 1N4454 Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: F2/10K per Ammo tape (52mm), 50K/box
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1N4454
150mA
DO-204AH
DO-35
F2/10K
50K/box
F3/10K
50K/box
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OF VR 10K
Abstract: 10k VR 1N4454 DO-204AH diode box
Text: 1N4454 Small Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box
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1N4454
150mA
DO-204AH
DO-35
D7/10K
20K/box
D8/10K
F2/10K
OF VR 10K
10k VR
1N4454
DO-204AH
diode box
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Untitled
Abstract: No abstract text available
Text: 1N4454 Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Packaging Codes/Options: D7/10K per 13” reel (52mm tape), 20K/box
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1N4454
150mA
DO-204AH
DO-35
D7/10K
20K/box
D8/10K
F2/10K
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diode 1n4454
Abstract: No abstract text available
Text: 1N4454 Small Signal Diodes min. 1.083 27.5 DO-35 Features max. ∅.079 (2.0) • Silicon Epitaxial Planar Diode • Fast switching diode Mechanical Data Cathode Mark min. 1.083 (27.5) max. .150 (3.8) Reverse Voltage 75V Forward Current 500mA Case: DO-35 Glass Case
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1N4454
500mA
DO-35
DO-35
diode 1n4454
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1N4149
Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Text: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end
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1N914
1N4454
1N4149,
1N4447,
1N4449
DO-34
DO-35
13gram
1N4450
1N4451
1N4149
1N4150
1N4152
1N4153
1N4447
1N4454
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1N4454
Abstract: No abstract text available
Text: 1N4454 Small Signal Switching Diode. Peak Reverse Voltage VRM = 75 V. Maximum . Page 1 of 1 Enter Your Part # Home Part Number: 1N4454 Online Store 1N4454 Diodes Small Signal Switching Diode. Peak Reverse Voltage VRM Transistors = 75 V. Maximum Average Rectified Current IAV = 150 MA.
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1N4454
1N4454
DO-35
com/1n4454
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DO-213AA 1N4148
Abstract: 1n914 surface mount diode 1N4148 JANTXV 1N4938 1N4938 JANTX 1N4148 1N4150 1N4153 1N4454 1N914
Text: Glass Signal Diode Series Reliability & Qualification Data This is the reliability and qualification data for the glass axial lead and surface mount signal diode series. Features JAN/JANTX/JANTXV available Ultra fast reverse and forward recovery Low forward recovery voltage
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DO-35,
DO-213AA
1N914,
1N4148,
1N4150,
1N4153,
1N4454,
1N4938
DO-213AA 1N4148
1n914 surface mount diode
1N4148 JANTXV
1N4938 JANTX
1N4148
1N4150
1N4153
1N4454
1N914
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1N4148 chip
Abstract: DIODE CHIP 1N4148 1n4148 die 1n4148 1n4148 die chip 1N4148.1N4448 CPD83V DIODE R3 1N4154 1N4448
Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x11 MILS Die Thickness 7.1MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å
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CPD83V
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
1N4148 chip
DIODE CHIP 1N4148
1n4148 die
1n4148
1n4148 die chip
1N4148.1N4448
CPD83V
DIODE R3
1N4154
1N4448
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diode S 335
Abstract: 1n4148 die 1n4148 1n4148 die chip 1N4154 1N4448 1N4454 1N914 DIODE CHIP 1N4148 CMPD2836
Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.35 x 3.35 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å
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CPD83V
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
diode S 335
1n4148 die
1n4148
1n4148 die chip
1N4154
1N4448
1N4454
1N914
DIODE CHIP 1N4148
CMPD2836
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1n4148
Abstract: 1n4148 die chip DIODE CHIP 1N4148 1N4148.1N4448 1N4154 1N4448 1N4454 1N914 1N914B CMPD4448
Text: PROCESS CPD63 Central Switching Diode TM Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 11 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization
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CPD63
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
1n4148
1n4148 die chip
DIODE CHIP 1N4148
1N4148.1N4448
1N4154
1N4448
1N4454
1N914
1N914B
CMPD4448
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CMPD2836
Abstract: CMPD2838 CMPD914 1N4454 CMPD7000 1N4148.1N4448 1N4148 1N4154 1N4448 1N914
Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD83V
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
CMPD2836
CMPD2838
CMPD914
1N4454
CMPD7000
1N4148.1N4448
1N4148
1N4154
1N4448
1N914
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1n4148 die chip
Abstract: 1n4448 die chip DIODE CHIP 1N4148 CMPD914 1N4148.1N4448 1N4148 1n4148 die 1N4448 1N4454 1N914B
Text: Central TM PROCESS CPD83V Switching Diode Semiconductor Corp. High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization
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CPD83V
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
1n4148 die chip
1n4448 die chip
DIODE CHIP 1N4148
CMPD914
1N4148.1N4448
1N4148
1n4148 die
1N4448
1N4454
1N914B
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1n4148 die chip
Abstract: 1n4448 die chip CMPD914 CPD83V DIODE CHIP 1N4148 1n4148 1n4154 diode 1n914 1n4148 die 1N914 DIE
Text: PROCESS CPD83V Switching Diode High Speed Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 11 x 11 MILS Die Thickness 7.1 MILS Anode Bonding pad Area 3.3 x 3.3 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å
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CPD83V
CMPD914
CMPD4448
1N914
1N914B
1N4148
1N4448
1N4154
1N4454
CMPD2836
1n4148 die chip
1n4448 die chip
CPD83V
DIODE CHIP 1N4148
1n4148 1n4154
diode 1n914
1n4148 die
1N914 DIE
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Germanium diode
Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes
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1N34A
1N38A
1N60A
1N100A
1N270
1N276
1N277
1N456
1N459
1N456A
Germanium diode
5 amp diode rectifiers
Germanium Diode OA91
aa117 diode
diode
2 Amp rectifier diode
2 Amp zener diode
DIODE 1N649
germanium rectifier diode
OA95 diode
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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MT1115
Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir
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108th
MT1115
2N3303
FPT100 phototransistor
UA739 equivalent
transistor bc 554 pnp
mt1039
ft2974
fairchild 2N3565
FD6666 diode
transistor npn Epitaxial Silicon SST 117
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Untitled
Abstract: No abstract text available
Text: TYPE 1N3064 SILICON SWITCHING DIODE B U L L E T IN N O . D L -S 7 3 9 1 1 4 , S E P T E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 9 7 3 FA ST SWITCHING DIODE • Rugged Double-Plug Construction • Electrically Equivalent to 1N4454 DO-35 and 1N4532 (DO-34)
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1N3064
1N4454
DO-35)
1N4532
DO-34)
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1N4149
Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Text: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm
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1N4149,
1N4447
1N4449
DO-34.
DO-35
DO-34
1N914
1N41491*
1N44491'
1N4450
1N4149
1N4150
1N4151
1N4152
1N4153
1N44491
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u34 diode
Abstract: 1N4454UR-1 1N4454 1N4454-1 DO-213AA LL4454 diode 1n4454 BKC Semiconductors 3-4U34
Text: Silicon Switching Diode 1N4454 DO-35 Glass Package Applications Used in genera! purpose applications, whereperformanpe andswitching DO-35 Glass Package F e a tu re nominal dimensions ;PKC'sSipsa Bond jplatiriig - Length fbrprobiernfree solderability 0.145"
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1N4454
DO-35
U-34/35
Mil-S-195007144
100mA,
1N4454-1
DO-213AA
LL4454)
1N4454UR-1)
Q1841
u34 diode
1N4454UR-1
1N4454
LL4454
diode 1n4454
BKC Semiconductors
3-4U34
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1N4454
Abstract: LL4454
Text: 1N4454 VISHAY SILICON SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • High Reliability High Conductance For General Purpose Switching Applications Available in Surface Mount Version LL4454 T D Mechanical Data_ DO-35
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1N4454
LL4454)
DO-35,
MIL-STD-202,
DO-35
1N4454
DS12016
LL4454
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mmbd1201-1205
Abstract: 1N4454 mmbd1201
Text: 1N4454 ta Discrete POW ER & Signa l Technologies National Semiconductor" 1N4454 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value
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1N4454
DO-35
MMBD1201-1205
40S3T
bSD1130
1N4454
mmbd1201
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1N4454UR-1
Abstract: BKC Semiconductors LL34 diode smd
Text: Silicon Switching Diode 1N4454 DO-35 Glass Package Applications Used in general purpose applications, where performance and switching speed are important. Features DO-35 Glass Package nominal dimensions glass 0.02ÛT Six sigma quality 0.6^1 Metallurgically bonded
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1N4454
DO-35
LL-34/35
Mil-S-19500/144
100mA,
1N4454-1
DO-213AA
LL4454)
1N4454UR-1)
1N4454UR-1
BKC Semiconductors
LL34 diode smd
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