1N4149
Abstract: No abstract text available
Text: 1N4149 HIGH SPEED SWITCHING DIODE DO - 35 PRV : 100 Volts Io : 150 mA FEATURES : * * * * * * Silicon Epitaxial Planar Diode High reliability Low reverse current Low forward voltage drop High speed switching Pb / RoHS Free 1.00 25.4 min. 0.079(2.0 )max. 0.150 (3.8)
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1N4149
DO-35
MIL-STD-202,
1N4149
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1N4149
Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Text: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end
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1N914
1N4454
1N4149,
1N4447,
1N4449
DO-34
DO-35
13gram
1N4450
1N4451
1N4149
1N4150
1N4152
1N4153
1N4447
1N4454
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Untitled
Abstract: No abstract text available
Text: 1N4149 Small Signal Switching Diode. Peak Reverse Voltage VRM = 100 V. Maximum . Page 1 of 1 Enter Your Part # Home Part Number: 1N4149 Online Store 1N4149 Diodes Small Signal Switching Diode. Peak Reverse Voltage Transistors Integrated Circuits VRM = 100 V. Maximum Average Rectified Current IAV =
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1N4149
1N4149
DO-35
com/1n4149
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1n4149
Abstract: No abstract text available
Text: 1N4149 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current
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1N4149
DO-35
1N4149
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11202-1
Abstract: mil-prf-19500 1n4151
Text: 1N4149-1,51-1,54-1 & 1N4446-1 – 1N4449-1 Available Screening in reference to MIL-PRF-19500 available Computer Switching Diode DESCRIPTION These popular 1N4149, 1N4151, 1N4154 and 1N4446 – 1N4449 series of JEDEC registered switching/signal diodes are available with internal metallurgical bonded construction. These
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1N4149-1
1N4446-1
1N4449-1
MIL-PRF-19500
1N4149,
1N4151,
1N4154
1N4446
1N4449
DO-35
11202-1
mil-prf-19500 1n4151
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Untitled
Abstract: No abstract text available
Text: 1N4149 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current
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1N4149
DO-35
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1N4149
Abstract: No abstract text available
Text: 1N4149 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current
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1N4149
DO-35
1N4149
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1N4149DCSM
Abstract: 1N4149qCSM
Text: SEME 1N4149CSM LAB MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL PLANAR DIODE 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) 3 1 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. (0.012) 3.05 ± 0.13
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1N4149CSM
1N4149"
1N4149CSM
1N4149CSM-JQR-B
1N4149DCSM
1N4149DCSM-JQR-B
1N4149QCSM
1N4149QCSM-JQR-B
150mA
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1N4149CSM
Abstract: No abstract text available
Text: SEME 1N4149CSM LAB MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL PLANAR DIODE 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) 3 1 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. (0.012) 3.05 ± 0.13
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1N4149CSM
1N4149CSM
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1N4149qCSM
Abstract: No abstract text available
Text: SEME 1N4149CSM LAB MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL PLANAR DIODE 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) 3 1 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. (0.012) 3.05 ± 0.13
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1N4149CSM
1N4149"
1N4149CSM
1N4149CSM-JQR-B
1N4149DCSM
1N4149DCSM-JQR-B
1N4149QCSM
1N4149QCSM-JQR-B
150mA
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1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
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1N100
1N100A
1N101
1N102
1N103
1N104
1N108
1N111
1N112
1N113
1N4548
1N4008
Diode 1N4008
1N4008 diode
1N1744A
1n4148
1N523b
2N4418
BAX15
1n5428
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Germanium diode
Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Text: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes
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1N34A
1N38A
1N60A
1N100A
1N270
1N276
1N277
1N456
1N459
1N456A
Germanium diode
5 amp diode rectifiers
Germanium Diode OA91
aa117 diode
diode
2 Amp rectifier diode
2 Amp zener diode
DIODE 1N649
germanium rectifier diode
OA95 diode
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1N4149
Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Text: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm
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1N4149,
1N4447
1N4449
DO-34.
DO-35
DO-34
1N914
1N41491*
1N44491'
1N4450
1N4149
1N4150
1N4151
1N4152
1N4153
1N44491
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IN5062
Abstract: IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode
Text: Diodes Switching Diode DO-35 V„(V) 25(30) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B 1N916, A, B 1N4149 1N4446 1N4447 1N4448 1N4449 1N4148 Surface M ount Diode V„(V) 30 Iq(MA) DLN4152 150 75 DLN914, A, B DLN916, A, B
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DO-35)
1N4152
1N4150
1N4151
1N4153
1N914,
1N916,
1N4149
1N4446
1N4447
IN5062
IN5625
scr C106B
LN4007 diode
in5061
in5625 diode
in5626
IN5060
IN5624
IN5060 diode
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1N4447
Abstract: No abstract text available
Text: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications.
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1N4149,
1N4151,
1N4154
1N4446,
1N4447,
1N4448
1N4449
DO-35
1N4149
1N4151
1N4447
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Untitled
Abstract: No abstract text available
Text: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications.
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1N4149,
1N4151,
1N4154
1N4446,
1N4447,
1N4448
1N4449
DO-35
1N4149
1N4151
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IN4154
Abstract: in4447 IN4448 in4151 1N4149 diode 1n4446 1N4447 1N4446 1N444B Diode 1n4149
Text: COMPUTER DIODE Switching 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 FEATURES • M etallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers M etallurgical Bonding and is very popular fo r general purpose sw itching applications.
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1N4149,
1N4151,
1N4154
1N4446,
IN4447,
1N4448
1N4449
DO-35
1N4149
1N4151
IN4154
in4447
IN4448
in4151
diode 1n4446
1N4447
1N4446
1N444B
Diode 1n4149
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Untitled
Abstract: No abstract text available
Text: {DISCRETE/OPTO! 909725Q TO SHIBA DISCR ETE/OPTO *• -, . 6 7C e 09289 O T O ï - o ? Silicon E p ita xial-'Planar Type 1N4149 Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES:
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909725Q
1N4149
100mA
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IN4149
Abstract: IN4154 DIODe IN4446 1N4446 in4448 4N* diode 1N4447 LN4149 1N4154 1N4149
Text: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • M e ta llu rg ic a l Bond • Planar Passivated • DO-35 DESCRIPTION This se rie s o ffe rs M e ta llu rg ic a l B onding and Is very pop u lar fo r general purpose
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1N4149,
1N4151,
1N4154
1N4446,
1N4447,
1N4448
1N4449
DO-35
1N4149
1N41S1
IN4149
IN4154
DIODe IN4446
1N4446
in4448
4N* diode
1N4447
LN4149
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1N4149
Abstract: ci2pf TOSHIBA 1N4149
Text: T {DISCRETE/OPTO! 9097250 TOSHIBA DISCR ETE/OPTO *• dF t -, I t D TV S S O . 67C e OQDclHflc! 4 | O T o ï -o ? 09289 Silicon Ep ita x ia l-'P la n a r Type 1N4149 Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.
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-CDISCRETE/0PT03-
1N4149
DO-35
100mA
1N4149
ci2pf
TOSHIBA 1N4149
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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