Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-100-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE
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GPPD-100-1B
DO-41
1N4001G
1N4007G
DO-41,
97bgppd100
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DIODE h4
Abstract: datasheet 1am 1N4001G 1N4007G 4002G 4005G 4006G
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-100-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE
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GPPD-100-1B
DO-41
1N4001G
1N4007G
DO-41,
97bgppd100
DIODE h4
datasheet 1am
1N4007G
4002G
4005G
4006G
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1N SERIES DIODE
Abstract: DIODE h4 1N4001G 1N4007G 4002G 4005G 4006G 1A DIODE 1N
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-100-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES Proprietary "Soft Glass R ACTUAL SIZE OF DO-41 PACKAGE " P/N junction passivation
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GPPD-100-1B
DO-41
1N4001G
1N4007G
DO-41,
97bgppd100
1N SERIES DIODE
DIODE h4
1N4007G
4002G
4005G
4006G
1A DIODE 1N
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-100-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP SOFT GLASS PASSIVATED SILICON DIODES MECHANICAL SPECIFICATION FEATURES R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND
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GPPD-100-1B
DO-41
1N4001G
1N4007G
97bgppd100
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DIODE 1N4004G
Abstract: 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G
Text: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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1N4001G
1N4007G
DO-41,
MIL-STD-202,
DO-41
DIODE 1N4004G
1N4005G
1N4006G
1N4001G
1N4007G
4002G
4005G
4006G
1N4007G-TB
diode 1N4007G
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Untitled
Abstract: No abstract text available
Text: 1N4001G – 1N4007G 1.0A GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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1N4001G
1N4007G
DO-41,
MIL-STD-202,
DO-41
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1N400x
Abstract: No abstract text available
Text: 1N4001 – 1N4007 1.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data
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1N4001
1N4007
DO-41,
MIL-STD-202,
DO-41
1N400x
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Untitled
Abstract: No abstract text available
Text: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data
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1N4001G
1N4007G
DO-41,
MIL-STD-202,
DO-41
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free diode 1n4001
Abstract: 1N4007 DO-41 package CDIL diode 1N4001 specifications 1n4007 cdil diode diode 1N 4002 1n4007 cdil free 1N4007 DIODE GR 1N4001 diode 4007 DATA specification SHEET CHARACTERISTICS DIODE 1N4007
Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer STANDARD RECOVERY RECTIFIERS 1N4001 - 1N4007 DO-41 Axial Lead Plastic Package These Axial Lead Mounted Rectifiers are used for General-Purpose Low-Power Applications
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QSC/L-000019
1N4001
1N4007
DO-41
C-120
1N4007Rev030103E
free diode 1n4001
1N4007 DO-41 package CDIL
diode 1N4001 specifications
1n4007 cdil diode
diode 1N 4002
1n4007 cdil
free 1N4007
DIODE GR 1N4001
diode 4007 DATA specification SHEET
CHARACTERISTICS DIODE 1N4007
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Untitled
Abstract: No abstract text available
Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per
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1N4001
1N4007
DO-41,
MIL-STD-202,
DO-41
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diode 1N4001 specifications
Abstract: CHARACTERISTICS DIODE 1N4007 free diode 1n4001 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 1N4001 DIODE SPECIFICATIONS DIODE 1N4001 WORKING 1N400X
Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per
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1N4001
1N4007
DO-41,
MIL-STD-202,
DO-41
diode 1N4001 specifications
CHARACTERISTICS DIODE 1N4007
free diode 1n4001
specifications of 1n4007 diode
1N4001-1N4007 datasheet
1N4001/1n4007 diode datasheet
DIODE 1N4001
1N4001 DIODE SPECIFICATIONS
DIODE 1N4001 WORKING
1N400X
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diode 1N4001 specifications
Abstract: No abstract text available
Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic
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1N4001
1N4007
DO-41,
MIL-STD-202,
DO-41
diode 1N4001 specifications
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Untitled
Abstract: No abstract text available
Text: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.
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0SDM33fl
1N4001,
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Diode IN 5404
Abstract: diode in 5401 IN 4004 diodes DIODE IN 4002 4002 diode DIODE 4004 diode IN 4004 5401 diode diode N 4007 KDA 1.2
Text: HERRMANN T ^ O I-1 5 KG 4SE J> m 443bS7S 0000123 3 • HRfIN Drahtdioden Lead mounted diodes Diodes à fils Diodentyp V T ype o f d io d e rrm V BR If a v Type de diode 4001 4002 4003 4004 4005 4006 4007 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 R 250-A
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3b57S
Diode IN 5404
diode in 5401
IN 4004 diodes
DIODE IN 4002
4002 diode
DIODE 4004
diode IN 4004
5401 diode
diode N 4007
KDA 1.2
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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LN4004 diode
Abstract: MR854 diode mr851 diode MR806 mr 800 diode MR831 1n4004 motorola diode 1N5000 mr1122 diode MR756
Text: From tiny, lead-mounted, low-current rectifiers to powerful multi-cell units w ith near-thousand-amp capacity; from single-phase, half-wave devices to three-phase circuits; from conventional diode junctions to special-purpose units for specific applications. M o to ro la 's extensive line o f rectifiers satisfies every
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267urrent
1N4933
MR830
MR800
MR850
MR820
1N3879
1N4934
MR831
MR801
LN4004 diode
MR854 diode
mr851 diode
MR806
mr 800 diode
1n4004 motorola diode
1N5000
mr1122 diode
MR756
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TCA160
Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;
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AC187
BC157
BC158
BC159
BC186
BC187
BD201
BD202
BD203
BD204
TCA160
BY164
Mullard C296
TAA310A
TAA435
TAA700
TBA550
TBA480
PCC88
TAA300
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
BA100 diode
BA102
AAY20
B2M1-5
1N2528
PH1021
OA210 diode
DIODE AA116
BB105
GAZ17
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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