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    DIODE 188 Search Results

    DIODE 188 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 188 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VUB120-16NO2

    Abstract: marking ntc 80
    Text: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V


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    PDF VUB120-12NO2 VUB120-16NO2 E72873 20101007a 120-12NO2 120-16NO2 120-12NO2T 120-16NO2T marking ntc 80

    VUB160-16NOX

    Abstract: No abstract text available
    Text: VUB 160 Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = IC80 2.7 V IFSM = 1100 A IFSM = 200 A = 125 A VCEsat = 2.2 V


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    PDF VUB160-12NO2 VUB160-16NO2 E72873 20101007a 160-12NO2 VUB160-12NO2 160-16NO2 VUB160-16NO2 160-12NO2T VUB160-16NOX

    VUB120-16NOX

    Abstract: No abstract text available
    Text: VUB 120 Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = IC80 2.7 V IFSM = 1100 A IFSM = 200 A = 100 A VCEsat = 2.1 V


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    PDF VUB120-12NO2 VUB120-16NO2 E72873 20101007a 120-12NO2 VUB120-12NO2 120-16NO2 VUB120-16NO2 120-12NO2T VUB120-16NOX

    160-16NO2T

    Abstract: VUB160-16NO2 160-12NO2 VUB160-16No2t E72873 VUB160-12NO2 marking ntc 160 vub16016no2 VUB160-16
    Text: VUB 160 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.2 V


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    PDF VUB160-12NO2 VUB160-16NO2 E72873 20101007a 160-12NO2 VUB160-12NO2 160-16NO2 VUB160-16NO2 160-12NO2T 160-16NO2T 160-12NO2 VUB160-16No2t E72873 marking ntc 160 vub16016no2 VUB160-16

    160-16NO2T

    Abstract: VUB160-16NO2 VUB160-16NOX
    Text: VUB 160 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.2 V


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    PDF VUB160-12NO2 VUB160-16NO2 E72873 20101007a 160-12NO2 160-16NO2 160-12NO2T 160-16NO2T VUB160-16NOX

    VUB120-16NO2

    Abstract: 120-12NO2 120-16NO2T VUB120-12NO2 12016N vub120-16NO2t E72873 Ultrafast Recovery Rectifier Bridge VUB 120 120-16NO2
    Text: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V


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    PDF VUB120-12NO2 VUB120-16NO2 E72873 20101007a 120-12NO2 VUB120-12NO2 120-16NO2 VUB120-16NO2 120-12NO2T 120-12NO2 120-16NO2T 12016N vub120-16NO2t E72873 Ultrafast Recovery Rectifier Bridge VUB 120 120-16NO2

    230.150

    Abstract: 24v 125A IGBT 150A diode
    Text: SKiiP 132 GH 120 - 212 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    132-gd

    Abstract: 132 gd 120 24v 125A IGBT Igbt 318
    Text: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    Untitled

    Abstract: No abstract text available
    Text: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11) Rthjs10)

    semikron skiip 132 GDL

    Abstract: semikron skiip 33 skiip 33 ups
    Text: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11) Rthjs10) semikron skiip 132 GDL semikron skiip 33 skiip 33 ups

    132 gd 120

    Abstract: skiip gd 120 semikron skiip 33 SKIIP DRIVER GD 132-gd semikron skiip 132 GDL
    Text: SKiiP 132 GD 120 - 318 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11) Rthjs10) 132 gd 120 skiip gd 120 semikron skiip 33 SKIIP DRIVER GD 132-gd semikron skiip 132 GDL

    SKIIPPACK

    Abstract: No abstract text available
    Text: SKiiP 192 GD 170 - 374 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11) Rthjs10) SKIIPPACK

    skiip gH 120

    Abstract: SKIIP CABLE 230.150
    Text: SKiiP 132 GH 120 - 212 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF IGBT11) Rthjs10) skiip gH 120 SKIIP CABLE 230.150

    GH170

    Abstract: gh17
    Text: SKiiP 192 GH170 - 272 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 4000 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms


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    PDF GH170 IGBT11) Rthjs10) gh17

    H20R1202

    Abstract: h20r1202 igbt equivalent H20R1202 equivalent of h20r1202 igbt h20r1202 H20R IHW20N120R2 H20R120 H20R12 igbt 1200V 60A
    Text: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications


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    PDF IHW20N120R2 IHW20N120R2 H20R1202 h20r1202 igbt equivalent H20R1202 equivalent of h20r1202 igbt h20r1202 H20R H20R120 H20R12 igbt 1200V 60A

    H20R1202

    Abstract: equivalent of h20r1202 equivalent H20R1202
    Text: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications


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    PDF IHW20N120R2 PG-TO-247-3-21 H20R1202 equivalent of h20r1202 equivalent H20R1202

    H20R1202

    Abstract: h20r1202 igbt igbt h20r1202 H20R120 equivalent of h20r1202 1200v 30A to247 25A 1200V 600v 30a IGBT equivalent H20R1202 igbt 600V
    Text: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications


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    PDF IHW20N120R2 PG-TO-247-3-21 H20R1202 h20r1202 igbt igbt h20r1202 H20R120 equivalent of h20r1202 1200v 30A to247 25A 1200V 600v 30a IGBT equivalent H20R1202 igbt 600V

    H20R1202

    Abstract: igbt h20r1202 h20r1202 igbt equivalent H20R1202 H20R120 equivalent of h20r1202 h20r H20R12 IHW20N120R2 600v 30a IGBT
    Text: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :


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    PDF IHW20N120R2 PG-TO-247-3-21 H20R1202 igbt h20r1202 h20r1202 igbt equivalent H20R1202 H20R120 equivalent of h20r1202 h20r H20R12 IHW20N120R2 600v 30a IGBT

    V6CH

    Abstract: diode ch9
    Text: TVS Rail Clamp / Avalanche Diode SP0506CAA, SP0506CAB, SP0518CAA Transient Voltage Suppression Rail Clamp Diode Array with Avalanche Diode Features This family of rail clamp or “diode steering” arrays are designed for very low capacitance ESD protection and is


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    PDF SP0506CAA, SP0506CAB, SP0518CAA immuni025" SP0506CAA SP0506 SP0506CAB SP0518 SP0518CAA V6CH diode ch9

    Untitled

    Abstract: No abstract text available
    Text: 1850 nm Laser Diode SAR-1850-20 Description The SAR-1850-20 is a high power broad area laser diode intended for midinfrared applications including spectroscopy and solid-state laser pumping. Absolute maximum ratings Parameter Operating temperature Laser diode


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    PDF SAR-1850-20 SAR-1850-20 SAR-1850-20,

    h20r1202

    Abstract: h20r1202 igbt equivalent of h20r1202 H20R120 igbt h20r1202 equivalent H20R1202 H20R igbt 20A 1200v IHW20N120R2 pspice high frequency igbt
    Text: IHW20N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode C Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications


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    PDF IHW20N120R2 PG-TO-247-3 h20r1202 h20r1202 igbt equivalent of h20r1202 H20R120 igbt h20r1202 equivalent H20R1202 H20R igbt 20A 1200v IHW20N120R2 pspice high frequency igbt

    Untitled

    Abstract: No abstract text available
    Text: MMBD6050-V Vishay Semiconductors Small Signal Switching Diode Features 3 • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC


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    PDF MMBD6050-V OT-23, AEC-Q101 2002/95/EC 2002/96/EC OT-23 MMBD6050-V-GS18 MMBD6050-V-GS08 2011/65/EU

    Thyristor MCD

    Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
    Text: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor


    OCR Scan
    PDF K21-0120 K21-0180 K41-0150 K41-0150 Thyristor MCD mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132

    BZX88

    Abstract: BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 BZX88-C2V7
    Text: MICRO-E SILICON PLANAR HIGH-SPEED SW ITCHING DIODES Ratings and Characteristics at 2 5 °C ambient temperature Type BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 Description Max. Vrw m Volts 60 Single diode 30 Single diode Single diode 15 60 Common cathode diode pair


    OCR Scan
    PDF BAW63 BAW63A BAW63B BAW64 BAW65 BAW66 BAW67 BAW68 BZX88-C10 BZX88-C11 BZX88 BZX88-C2V7