1480 nm diode laser
Abstract: NX7461LE NX7461LE-BA NX7461LE-CA NX8562LB 1480 nm laser diode
Text: 1480 nm EDFA APPLICATION InGaAsP STRAINED MQW-DC-PBH LASER DIODE MODULE NX7461LE FEATURES DESCRIPTION • InGaAsP STRAINED MQW DC-PBH LASER DIODE • HIGH OUTPUT POWER: Pf = 150 mW MIN @ IF = 600 mA CW The NX7461LE is a 1480 nm pumping laser diode module with
|
Original
|
NX7461LE
NX7461LE
14-PIN
24-Hour
1480 nm diode laser
NX7461LE-BA
NX7461LE-CA
NX8562LB
1480 nm laser diode
|
PDF
|
NX7461LE-CC
Abstract: edfa pump laser
Text: PRELIMINARY DATA SHEET NEC's 1480 nm InGaAsP MQW FP PUMP LASER DIODE MODULE FOR EDFA APPLICATION 150 mW MIN NX7461LE-CC FEATURES • InGaAsP MQW-FP LASER DIODE • HIGH OUTPUT POWER: Pf = 150 mW MIN @ IF = 600 mA CW • INTERNAL OPTICAL ISOLATOR, THERMOELECTRIC
|
Original
|
NX7461LE-CC
14-PIN
NX7461LE-CC
edfa pump laser
|
PDF
|
S12 MARKING DIODE
Abstract: S12 MARKING CODE DIODE SOD882 BAP55L
Text: BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features • High speed switching for RF signals ■ Low diode capacitance
|
Original
|
BAP55L
OD882
sym006
S12 MARKING DIODE
S12 MARKING CODE DIODE
SOD882
BAP55L
|
PDF
|
OL4492L
Abstract: No abstract text available
Text: JOG-01156 OKI Electronics Components Rev.2. [Jul. 2004] Preliminary OL4492L,OL492L 2mW Coaxial DFB Laser Diode Modules with Single Mode Fiber. 1. DESCRIPTION OL4492L and OL492L consist of a 1480nm DFB laser diode, a monitor PD, an optical isolator, a single-mode fiber and a coaxial package.
|
Original
|
JOG-01156
OL4492L
OL492L
OL492L
1480nm
D-41460
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TFDU2201 Vishay Telefunken Low Profile Transceiver Module Photo Pin Diode and Infrared Emitter Description The miniaturized TFDU2201 is an ideal pin diode transmitter combination in a unique package for applications in telecommunications like mobile phones
|
Original
|
TFDU2201
TFDU2201
D-74025
17-May-00
|
PDF
|
pin out diagram of 74138 ic
Abstract: pin configuration of IC 74138 circuit diagram body thermistor 280542
Text: 19-3476; Rev 2; 9/06 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the
|
Original
|
MAX6698
E38-T
MAX6698UE99
21-0066I
U16-1*
MAX6698UE99-T
MAX6698UE9C
MAX6698UE9C-T
pin out diagram of 74138 ic
pin configuration of IC 74138
circuit diagram body thermistor
280542
|
PDF
|
tsks5400s-asz
Abstract: No abstract text available
Text: TSKS5400S Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSKS5400S is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides high radiant intensity in a low profile package.
|
Original
|
TSKS5400S
TSKS5400S
TEKT5400S
TEKS5400
TEKS5400
2002/95/EC
08-Apr-05
tsks5400s-asz
|
PDF
|
10mW
Abstract: No abstract text available
Text: JOG-00980 OKI Electronics Components Preliminary OLx109L-10 Series Rev. 3 [Jan. 2005] 10mW Laser Diode Butterfly Modules with Single Mode Fiber, Built in Cooler, Isolator. 1. DESCRIPTION OLx109L-10 Series are Laser Diode in Butterfly package with SMF. 2. FEATURES
|
Original
|
JOG-00980
OLx109L-10
D-41460
10mW
|
PDF
|
OL6109L-5A
Abstract: OL6109L-5B
Text: JOG-00978 OKI Electronics Components Preliminary OLx109L-5 Series Rev. 3 [Jan. 2005] 5mW Laser Diode Butterfly Modules with Single Mode Fiber, Built in Cooler, Isolator. 1. DESCRIPTION OLx109L-5 Series are Laser Diode in Butterfly package with SMF. 2. FEATURES
|
Original
|
JOG-00978
OLx109L-5
D-41460
OL6109L-5A
OL6109L-5B
|
PDF
|
RG105
Abstract: ir igbt 1200V 10A SS850 sa wf IRGP20B120UD-E
Text: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability
|
Original
|
IRGP20B120UD-E
O-247AD
20KHz
RG105
ir igbt 1200V 10A
SS850
sa wf
IRGP20B120UD-E
|
PDF
|
TSKS5400-ESZ
Abstract: TEKS5400 TSKS5400
Text: TSKS5400 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description TSKS5400 is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
|
Original
|
TSKS5400
TSKS5400
TEKS5400
TSKS5400-ESZ
D-74025
15-Dez-99
TSKS5400-ESZ
TEKS5400
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant
|
Original
|
TSMF4710
TSMF4710
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSHF4410 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, in a clear, untinted plastic package. DH technology combines high speed with high radiant
|
Original
|
TSHF4410
TSHF4410
2002/95/EC
2002/96/EC
08-Apr-05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSKS5400 Vishay Telefunken GaAs Infrared Emitting Diode in Side View Package Description TSKS5400 is a standard GaAs infrared emitting diode in a flat sideview molded plastic package. A small recessed spherical lens provides an improved radiant intensity in a low profile case.
|
Original
|
TSKS5400
TSKS5400
TEKS5400
TSKS5400-ESZ
D-74025
23-Feb-01
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a Schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)
|
Original
|
SSM6G18NU
|
PDF
|
uDFN-6
Abstract: No abstract text available
Text: SSM6G18NU Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM6G18NU Power Management Switch Applications • Combined a P-channel MOSFET and a schottky barrier diode in one package. • Low RDS ON and Low VF RDS(ON) = 261 mΩ (max) (@VGS = -1.5V)
|
Original
|
SSM6G18NU
uDFN-6
|
PDF
|
1650 DFB laser
Abstract: 1625 LD CAN 10mW OLx109L-10
Text: JOG-00980 Optical Components OLx109L-10 Series Rev. 4 [10. 2008] Preliminary 10mW Laser Diode Butterfly Modules with Single Mode Fiber, Built in Cooler, Isolator. 1. DESCRIPTION OLx109L-10 Series are Laser Diode in Butterfly package with SMF. 2. FEATURES • Fiber output: Pf=10mW
|
Original
|
JOG-00980
OLx109L-10
1650 DFB laser
1625 LD CAN 10mW
|
PDF
|
CS6709
Abstract: laser diode driver circuit automatic power control laser rise time laser diode driver for fiber optic laser diode driver circuit automatic modulation current FEATURES OF LASER DIODE
Text: Century Semiconductor Inc. CS6709 200Mbps Fiber-Optic Laser Diode Driver GENERAL DESCRIPTION FEATURES The CS6709 is a high-speed fiber optic laser diode driver suited for applications up to 200Mbps. The CS6709 accepts differential PECL inputs, additionally a TTL/CMOS enable pin is provided for
|
Original
|
CS6709
200Mbps
CS6709
200Mbps.
24-pin
laser diode driver circuit automatic power control
laser rise time
laser diode driver for fiber optic
laser diode driver circuit automatic modulation current
FEATURES OF LASER DIODE
|
PDF
|
GB50XF120K
Abstract: No abstract text available
Text: Bulletin PD - 94567 rev.B 08/03 GB50XF120K IGBT SIXPACK MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
|
Original
|
GB50XF120K
E78996
GB50XF120K
|
PDF
|
OLx109L-5
Abstract: OL6109L-5A OL6109L-5B
Text: JOG-00978 Optical Components OLx109L-5 Series Rev. 4 [10. 2008] Preliminary 5mW Laser Diode Butterfly Modules with Single Mode Fiber, Built in Cooler, Isolator. 1. DESCRIPTION OLx109L-5 Series are Laser Diode in Butterfly package with SMF. 2. FEATURES • Fiber output: Pf=5mW
|
Original
|
JOG-00978
OLx109L-5
OL6109L-5A
OL6109L-5B
|
PDF
|
BAS32
Abstract: diode bas32 IEC134 BAS32 sod80
Text: 41E D 711002b 00533bt. eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32 is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a h e rm e tica lly sealed SOD- 8 O envelope w ith tin -p la te d m etal discsat
|
OCR Scan
|
711002b
00533bt.
BAS32
T-03-09
diode bas32
IEC134
BAS32 sod80
|
PDF
|
laser diode Spectral Width 1 nm, 1550 nm, power 2
Abstract: No abstract text available
Text: DATA SH E E T LASER DIODE NDL7553P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series is a 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode coaxial module with singlemode fiber.
|
OCR Scan
|
NDL7553P
1550nm
NDL7553P1
bMS752S
L427525
laser diode Spectral Width 1 nm, 1550 nm, power 2
|
PDF
|
699h
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: EN 699H , SAHYO SVC321SPA N 0 .6 9 9 H Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features • The SVC321SPA is a varactor diode with a good linearity and high capacitance ratio that is capable of
|
OCR Scan
|
SVC321SPA
SVC321SPA
10juA
V153-0
699h
|
PDF
|
1480 nm laser diode high power
Abstract: No abstract text available
Text: O K I electronic components OL403N-100 1.48 jam High-Power Laser Diode GENERAL DESCRIPTION The OL403N-100 is a 1.48 |xm, InGaAsP/InP high-power laser diode which can be a light source for fiber-optic communication systems and optical instruments. FEATURES
|
OCR Scan
|
OL403N-100
OL403N-100
b724240
00E2435
2424D
G02243b
L724240
DD22437
1480 nm laser diode high power
|
PDF
|
