100MHZ
Abstract: marking code TS
Text: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.
|
Original
|
PDF
|
1SV277WT
100mA
OD-523
OD-523
100MHZ
marking code TS
|
100MHZ
Abstract: No abstract text available
Text: 1SV277WT BAND-SWITCHING DIODE Features PINNING • Small plastic SMD package • Continuous reverse voltage: max. 35V 1 Cathode • continuous forward current:max.100mA 2 Anode • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω.
|
Original
|
PDF
|
1SV277WT
100mA
OD-523
OD-523
100MHZ
|
100MHZ
Abstract: No abstract text available
Text: 1SS277WT BAND-SWITCHING DIODE Features • Small plastic SMD package • Continuous reverse voltage: max. 35V • continuous forward current:max.100mA • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω. Applications • Low loss band switching in VHF television tuners.
|
Original
|
PDF
|
1SS277WT
100mA
OD-523
100MHZ
|
100MHZ
Abstract: No abstract text available
Text: 1SS277WT BAND-SWITCHING DIODE Features • Small plastic SMD package • Continuous reverse voltage: max. 35V • continuous forward current:max.100mA • Low diode capacitance:max.1.2pF • Low diode forward resistance : max. 0.7Ω. Applications • Low loss band switching in VHF television tuners.
|
Original
|
PDF
|
1SS277WT
100mA
OD-523
100MHZ
|
202E
Abstract: XR-85 rf 06
Text: SHANGHAI SUNRISE ELECTRONICS CO., LTD. XR-85 SILICON EPITAXIAL PLANAR SWITCHING DIODE TECHNICAL SPECIFICATION REVERSE VOLTAGE: 20V FORWARD CURRENT: 100mA FEATURES DO - 34 • Small glass structure ensures high reliability • Low leakage • High temperature soldering guaranteed:
|
Original
|
PDF
|
XR-85
100mA
250oC/10S/9
100MHz)
202E
XR-85
rf 06
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V / 100mA USCD012H THRU USCD014H OUTLINE DIMENSIONS FEATURES 0.05 1.6 ± 0.1 20 0.70 Typ. R 0. 0.35 ± 0.05 APPLICATION Switching mode power supply applications Portable equipment battery applications High frequency rectification
|
Original
|
PDF
|
100mA)
USCD012H
USCD014H
OD-523
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V / 100mA USCD012 THRU USCD014 FEATURES OUTLINE DIMENSIONS Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency
|
Original
|
PDF
|
100mA)
USCD012
USCD014
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V / 100mA Thin flat package MSCD012S THRU MSCD014S OUTLINE DIMENSIONS Case : 0805-S FEATURES Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame
|
Original
|
PDF
|
100mA)
MSCD012S
MSCD014S
0805-S
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V / 100mA MSCD012 THRU MSCD014 FEATURES OUTLINE DIMENSIONS Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency
|
Original
|
PDF
|
100mA)
MSCD012
MSCD014
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V / 100mA MSCD012H THRU MSCD014H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency
|
Original
|
PDF
|
100mA)
MSCD012H
MSCD014H
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V / 100mA USCD012H THRU USCD014H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product , compliance to RoHs Lead less chip form , no lead damage Lead-free solder joint , no wire bond & lead frame Low power loss , High efficiency
|
Original
|
PDF
|
100mA)
USCD012H
USCD014H
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V / 100mA MSCD012H THRU MSCD014H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency
|
Original
|
PDF
|
100mA)
MSCD012H
MSCD014H
|
MARK F
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V / 100mA USCD012H THRU USCD014H FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency
|
Original
|
PDF
|
100mA)
USCD012H
USCD014H
MARK F
|
Untitled
Abstract: No abstract text available
Text: ZOWIE Schottky Barrier Diode 20V~40V / 100mA MSCD012H THRU MSCD014H OUTLINE DIMENSIONS FEATURES Case : 0805 Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability
|
Original
|
PDF
|
100mA)
MSCD012H
MSCD014H
|
|
|
XBS013R1DR-G
Abstract: XBS013R1DR
Text: XBS013R1DR-G ETR1617-005 Schottky Barrier Diode, 100mA, 30V Type •APPLICATIONS ■FEATURES ●Low Current Rectification Ultra Small Package Low IR ■PACKAGING INFORMATION ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARMETER SYMBOL RATINGS UNITS VRM 30 V Repetitive Peak Voltage
|
Original
|
PDF
|
XBS013R1DR-G
ETR1617-005
100mA,
XBS013R1DR-G
XBS013R1DR
|
XBS013V1DR
Abstract: XBS013V1DR-G
Text: XBS013V1DR-G ETR1618-005 Schottky Barrier Diode, 100mA, 30V Type •APPLICATIONS ■FEATURES ●Low Current Rectification Ultra Small Package Low VF ■PACKAGING INFORMATION ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARMETER SYMBOL RATINGS UNITS VRM 30 V Repetitive Peak Voltage
|
Original
|
PDF
|
XBS013V1DR-G
ETR1618-005
100mA,
XBS013V1DR
XBS013V1DR-G
|
AT78L05
Abstract: AT78L12 24V to 15V REGULATOR IC SOT-89-3L AN78L00 LM78L00 AT78L00 AT78L08
Text: AT78L00 100mA Positive Voltage Regulator Immense Advance Tech. DESCRIPTION FEATURES The AT78L00 series of three terminal positive regulators is available with several fixed output voltages making them useful in a wide range of applications. When used as a zener diode/resistor
|
Original
|
PDF
|
AT78L00
100mA
AT78L00
AT78L15
AT79L15
OT-89
AT78L05
AT78L12
24V to 15V REGULATOR IC
SOT-89-3L
AN78L00
LM78L00
AT78L08
|
PJRB461F
Abstract: Diode Marking .004
Text: PJRB461F SURFACE MOUNT SCHOTTKY DIODE VOLTAGE 25 Volts CURRENT 700 mA SOT-323 Unit: inch mm FEATURES .087(2.2) .070(1.8) • Extremely fast switching speed .087(2.2) .078(2.0) .004(.10)MIN. • IF guaranteed at 0.7A • Ultra-Low VF(0.28V typical @100mA,75 OC
|
Original
|
PDF
|
PJRB461F
OT-323
100mA
OT-323,
MIL-STD-750,
PJRB461F
Diode Marking .004
|
EM6M2
Abstract: diode marking U22
Text: TYPE PRODUCTS EMT6 PAGE EM6M2 1.TYPE EM6M2 2.STRUCTURE SILICON N-CHANNEL / P-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/5 4.ABSOLUTE MAXIMUM RATINGS [Ta=25oC] 《 Tr1 : Nch 》 DRAIN-SOURCE VOLTAGE VDSS ・・・ 20V GATE-SOURCE VOLTAGE VGSS ・・・ ±8V
|
Original
|
PDF
|
200mA
400mA
PW10s
150mW
120mW
55IRCUITNch
TSQ03103H-EM6M2
EM6M2
diode marking U22
|
Untitled
Abstract: No abstract text available
Text: TENTATIVE RV3C001ZP Pch -20V -100mA Small Signal MOSFET Data Sheet lOutline VDSS -20V RDS on (Max.) 3.8W ID -100mA PD 100mW VML0604 lInner circuit lFeatures (1) Gate (2) Source (3) Drain 1) Ultra Small Package (0.6x0.4×0.36mm) 2) Low voltage drive (-1.2V) makes this
|
Original
|
PDF
|
RV3C001ZP
-100mA
-100mA
100mW
VML0604
R1102A
|
Untitled
Abstract: No abstract text available
Text: RV2C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline VDSS -20V RDS on (Max.) 3.8W ID -100mA PD 100mW lFeatures VML1006 (3) (2) (1) lInner circuit 1) Low voltage drive(-1.2V) makes this device ideal for partable equipment. (1) Gate (2) Source (3) Drain
|
Original
|
PDF
|
RV2C001ZP
-100mA
-100mA
100mW
VML1006
R1102A
|
RV1C001ZP
Abstract: No abstract text available
Text: RV1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline VDSS -20V RDS on (Max.) 3.8W ID -100mA PD 100mW lFeatures (3) VML0806 (2) (1) lInner circuit 1) The world smallest Package (0806size). (1) Source (2) Gate (3) Drain 2) Low voltage drive(-1.2V) makes this
|
Original
|
PDF
|
RV1C001ZP
-100mA
100mW
VML0806
0806size)
R1120A
RV1C001ZP
|
C0034
Abstract: 0C70 APS1000 u0440 K045
Text: APS1000 SERIES SURFACE MOUNT SILICON PIN SWITCHING DIODE DESCRIPTION: PACKAGE STYLE SOT-23 SILICON PIN SWITCHING DIODE IN A SOT-23 PACKAGE MILUMETERS DIM A Absolute Maximum Ratings 1 V P.D. 100MA AS SHOWN 250mW @ TC=25°C MIN 28C MAX 3.04 INCHES MIN 01102
|
OCR Scan
|
PDF
|
APS1000
OT-23
OT-23
100MA
250mW
0CC40
C0034
0CS84
100MHz
0C70
u0440
K045
|
ir10 diode
Abstract: c177
Text: APS1000 SERIES SURFACE MOUNT SILICON PIN SWITCHING DIODE DESCRIPTION: PACKAGE STYLE SOT-23 SILICON PIN SWITCHING DIODE IN A SOT-23 PACKAGE D ili A B C D G H J K L S V Absolute Maximum Ratings I 100MA V AS SHOWN P.D. 250mW @ TC=25°C MILUKETERS MIN MAX 28C
|
OCR Scan
|
PDF
|
APS1000
OT-23
OT-23
100MA
250mW
APS1000SP
APS1000CC
APS1002
APS1002SP
ir10 diode
c177
|
