63B4
Abstract: 100LA4 63B14 VSF320 100LB4 IEC 90B5 B562-2 56B14 90LB4 63A4
Text: Pag. Page Indice Index Caratteristiche tecniche Technical characteristics Designazione Designation Versioni Versions Simbologia Symbols Dati di dentatura Toothing data Rendimento Efficiency Posizioni di montaggio Mounting positions Carichi radiali Radial loads
|
Original
|
|
PDF
|
written
Abstract: XC4010E-PQ160 PQ160 PQ208 PQ240 TQ144 XC4000 XC4000E XC4010E XC4013E
Text: LogiCore PCI Master and Slave Interface User's Guide November 1, 1996 Version 1.1 LC-DI-PCIM-C and LC-DI-PCIS-C Table of Contents LogiCore Facts 1. Introduction . 1 2. Getting Started . 3
|
Original
|
|
PDF
|
ST P239
Abstract: 714 p180 verilog code for pci express memory transaction P181 Japan P135 equivalent 714 p181 XC000E HQ240 XC4013EPQ160 XC4013
Text: PCI Master Interface, PCI Slave Interface February, 1997 Product Description Features • Fully 2.1 PCI compliant 32 bit, 33MHz PCI Interface ◊ Master Initiator/Target , LC-DI-PCIM-C ◊ Slave (Target-only), LC-DI-PCIS-C PCI Master and Slave Interfaces V1.1.0
|
Original
|
33MHz
XC000E
ST P239
714 p180
verilog code for pci express memory transaction
P181 Japan
P135 equivalent
714 p181
HQ240
XC4013EPQ160
XC4013
|
PDF
|
M2KA
Abstract: HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A
Text: We surveyed SVHC 161 substances. REACH/SVHC Information Product description SMCI XB. SMC TE SENSOR YA-JA01 PB FREE SENSOR YA-HC05 PBFREE SP SMC DI SENSOR YA-HC04 SMC DI SENSOR YA-JB01 SENSOR YA-HC09(SP) SENSOR YA-HA01PB-FREE(SP) SENSOR YA-HC09 SMC YA-JA02 A-TE SENSOR
|
Original
|
YA-JA01
YA-HC05
YA-HC04
YA-JB01
YA-HC09
YA-HA01PB-FREE
YA-HC09
YA-JA02
YA-HC18
YA-JB05
M2KA
HEPC
XS2F-D523-D80-A
OMR H
C3JW
ly2f t2
YAZAKI Terminal7116-4022
WL01CA
54151A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNA3602L PIN Photodiode For optical control systems M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings Parameter di p Pl lan nclu ea e se pla m d m des
|
Original
|
2002/95/EC)
PNA3602L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ154NC Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d Fast response Wide spectral sensitivity characteristics Adoption of visible light cutoff resin Absolute Maximum Ratings Ta = 25°C
|
Original
|
PNZ154NC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ202S (PN202S) Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. M Di ain sc te on na tin nc ue e/ d • Darlington output, high sensitivity
|
Original
|
2002/95/EC)
PNZ202S
PN202S)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ300 (PN300), PNZ300F (PN300F) Silicon planar type φ4.6±0.15 PAZ300 For optical control systems 6.3±0.3 • Features 12.7 min. Glass lens 0. 15 0± 1. di p Pl lan nclu ea e
|
Original
|
2002/95/EC)
PNZ300
PN300)
PNZ300F
PN300F)
PAZ300
|
PDF
|
PN107F
Abstract: PN108F PNZ107F PNZ108F Lx 3c paz1
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F φ4.6±0.15 M Di ain sc te on na tin nc ue e/ d 12.7 min. For optical control systems • Features 3° 1. 0± 0.
|
Original
|
2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PAZ107F
MTGFR102-001
PAZ108F
PN107F
PN108F
PNZ107F
PNZ108F
Lx 3c
paz1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ334 (PN334) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d Plastic type package (φ5) High coupling capabillity suitable for plastic fiber
|
Original
|
2002/95/EC)
PNZ334
PN334)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ106 (PN106) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens • Features M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity
|
Original
|
2002/95/EC)
PNZ106
PN106)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ150 (PN150) Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 (1.8) 2-0.98±0.2 2-0.45±0.15 10.0 min. 12.8 min. M Di ain sc te on na tin nc
|
Original
|
2002/95/EC)
PNZ150
PN150)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ102 (PN102) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens M Di ain sc te on na tin nc ue e/ d • Features 12.7 min. • High sensitivity
|
Original
|
2002/95/EC)
PNZ102
PN102)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) • Features 2-1.2±0.15 2.3±0.3 13 min. M Di ain sc te on na tin nc ue e/
|
Original
|
2002/95/EC)
PNZ313B
PN313B)
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323 (PN323) Silicon planar type For optical control systems • Features Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll
|
Original
|
2002/95/EC)
PNZ323
PN323)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ106 (PN106) Silicon planar type Unit: mm φ4.6±0.15 For optical control systems 6.3±0.3 Glass lens M Di ain sc te on na tin nc ue e/ d • Features 12.7 min. • High sensitivity
|
Original
|
2002/95/EC)
PNZ106
PN106)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ155 (PN155) Silicon planar type Unit: mm 1.6±0.1 For optical control systems 1.6±0.15 0.8±0.1 12.8 min. (2.95) M Di ain sc te on na tin nc ue e/ d 3.9±0.25 • High sensitivity
|
Original
|
2002/95/EC)
PNZ155
PN155)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d High sensitivity Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs
|
Original
|
2002/95/EC)
PNA1801L
PN168)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll
|
Original
|
2002/95/EC)
PNZ108
PN108)
|
PDF
|
2CSC400002D0903
Abstract: 2CSG210200R1211 ABB E 257 C30-230 S465502 2CSG035100R1211 2CSG210100R1211 ABB SACE sn 125 EA1733 LCD TV SCHEMA S550284
Text: Catalogo tecnico System pro M compact System pro M Interruttori magnetotermici, differenziali e apparecchi modulari per impianti in bassa tensione System pro M compact® - System pro M Per tener conto dell’evoluzione delle Norme e dei materiali, le caratteristiche e le dimensioni di ingombro indicate nel presente
|
Original
|
2CSC400002D0903
2CSG210200R1211
ABB E 257 C30-230
S465502
2CSG035100R1211
2CSG210100R1211
ABB SACE sn 125
EA1733
LCD TV SCHEMA
S550284
|
PDF
|
PN109CL
Abstract: PNZ109CL
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ109CL (PN109CL) Silicon planar type Unit: mm 3-φ0.43±0.05 M Di ain sc te on na tin nc ue e/ d • High sensitivity: ICE(L) = 2 mA (min.) • Wide directivity characteristics for easy use
|
Original
|
2002/95/EC)
PNZ109CL
PN109CL)
PN109CL
PNZ109CL
|
PDF
|
BT 816 triac
Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Text: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: F SUO] LG L-Band Medium & High Power di GaAs F E is Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 12.0 V Gate-Source Voltage vgs -5 V Total Power Dissipation Ptot 375 mW Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C
|
OCR Scan
|
2000Q.
|
PDF
|
MM58539
Abstract: No abstract text available
Text: MM58548 Multiplexed LCD Driver General Description Features The MM58548 is a monolithic integrated circuit utilizing CMOS metal-gate, low threshold P and N-channel devices. It drives a 16-row by 16-column dot matrix LCD array di rectly under control o t an external microprocessor. The
|
OCR Scan
|
MM58548
MM58548
16-row
16-column
MM58548can
MM58539
16rowsandan
40-pin
|
PDF
|
