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    DEPLETION 60V POWER MOSFET Search Results

    DEPLETION 60V POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DEPLETION 60V POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CPC3701

    Abstract: sot89 E3 FET SOT-89 J-STD-033 PCB
    Text: CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET INTEGRATED CIRCUITS DIVISION V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 60V 1 600mA SOT-89 Features • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 1 max. at 25ºC


    Original     		PDF CPC3701 600mA OT-89 CPC3701 DS-CPC3701-R03 sot89 E3 FET SOT-89 J-STD-033 PCB

    D 4242 transistor

    Abstract: J-STD-033 PCB CPC3701 sot89 E3
    Text: CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 60V 1 600mA SOT-89 Features • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 1 max. at 25ºC • High Input Impedance


    Original     		PDF CPC3701 600mA OT-89 CPC3701 DS-CPC3701-R02 D 4242 transistor J-STD-033 PCB sot89 E3

    Untitled

    Abstract: No abstract text available
    Text: CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET INTEGRATED CIRCUITS DIVISION V BR DSX / V(BR)DGX RDS(on) (max) IDSS (min) Package 60V 1 600mA SOT-89 Features • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 1 max. at 25ºC


    Original     		PDF CPC3701 600mA OT-89 CPC3701 DS-CPC3701-R04

    Untitled

    Abstract: No abstract text available
    Text: SDM4102 1 Form B 60V / 75m DC MOSFET Output Solid State Relay Description Features The SDM4102 is a DC, single-pole, single-throw, normally closed solid-state relay in a 4 pin single inline package. The relay consists of an AlGaAs LED, optically coupled to a


    Original     		PDF SDM4102 SDM4102 SDM4102ch

    depletion 60V power mosfet

    Abstract: solid state relay 10A DC SDM4102 B60V
    Text: SDM4102 1 Form B 60V / 75mΩ DC MOSFET Output Solid State Relay Description Features The SDM4102 is a DC, single-pole, single-throw, normally closed solid-state relay in a 4 pin single inline package. The relay consists of an AlGaAs LED, optically coupled to a


    Original     		PDF SDM4102 SDM4102 depletion 60V power mosfet solid state relay 10A DC B60V

    0.6 um cmos process

    Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


    Original     		PDF

    FET SOT-89 N-Channel

    Abstract: depletion 60V power mosfet EIA-481-2 J-STD-033 DS-CPC3701-R01 A0 SOT-89 sot89 E3
    Text: CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V BR DSX / V(BR)DGX RDS(ON) (max) IDSS (min) Package 60V 1 600mA SOT-89 Features • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 1 max. at 25ºC • High Input Impedance


    Original     		PDF CPC3701 600mA OT-89 CPC3701 DS-CPC3701-R01 FET SOT-89 N-Channel depletion 60V power mosfet EIA-481-2 J-STD-033 DS-CPC3701-R01 A0 SOT-89 sot89 E3

    Untitled

    Abstract: No abstract text available
    Text: CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET V BR DSX / V(BR)DGX RDS(ON) (max) IDSS (min) Package 60V 1 600mA SOT-89 Features • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 1 max. at 25ºC • High Input Impedance


    Original     		PDF CPC3701 600mA OT-89 CPC3701 DS-CPC3701-R01

    spice model Tunnel diode

    Abstract: dpsN TUNNEL DIODE spice model
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


    Original     		PDF

    relay 12v 200 ohm

    Abstract: load-dump airbag temic telefunken IC flasher
    Text: BCDMOS and I2L Technologies BCDMOS Characteristics Power transistor: MOS transistors: CMOS 5 V: Bipolar: Masks: Wiring: Channel length: VBR = 55 V, rDSon = 4.5 mWcm2 NMOS/PMOS 12 V 9 500 Gates/mm2 npn/pnp lateral 18 2 layers 2 mm (CMOS) Transistors Parameter


    Original     		PDF 10-mV relay 12v 200 ohm load-dump airbag temic telefunken IC flasher

    LND150N8 equivalent

    Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA LND150N8 equivalent depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET

    MOSFET IGSS 100nA VDS 20V

    Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.


    Original     		PDF LND150 O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA MOSFET IGSS 100nA VDS 20V N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8

    TLF35584

    Abstract: TLE9180 alternator regulator protocol BSS BTN8980 TC27x TLE9834 TC27x data spec alternator BSD TLE9832 Infineon TLE9180
    Text: Ultimate Power – Perfect Control Vehicle Safety, Body and Powertrain Applications www.infineon.com/automotivepower For a comprehensive and reliable portfolio of products for automotive and other applications, look no further than the product range from Infineon. We have used our 40 years of experience


    Original     		PDF

    hv9967

    Abstract: HV9910B dc to dc converter 12v design DN2450 HV9910B HV9910B* application Depletion-Mode MOSFET HV9910B "application note" depletion MOSFET pwm rgb led driver HV9910
    Text: Supertex inc. HV9967 Integrated LED Driver with Average-Mode Current Control Features ► ► ► ► ► ► ► ► ► ► 3% accurate LED current Integrated 60V 0.8Ω MOSFET Small outline MSOP-8 package Low sensitivity to external component variation Cascode connection with a 500V depletion-mode


    Original     		PDF HV9967 HV9967 DSFP-HV9967 A122110 HV9910B dc to dc converter 12v design DN2450 HV9910B HV9910B* application Depletion-Mode MOSFET HV9910B "application note" depletion MOSFET pwm rgb led driver HV9910

    PLCC-6 5050

    Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
    Text: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case


    Original     		PDF SA146RS PLCC-6 5050 P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG

    ln1e

    Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
    Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.


    Original     		PDF LND150 O-243AA: O-243AA* LND150N3 LND150N8 LND150ND OT-89. 100nA ln1e depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND

    all mosfet equivalent book

    Abstract: P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion
    Text: November 2,1999 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 2


    Original     		PDF AN9010 all mosfet equivalent book P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion

    This article

    Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
    Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left


    Original     		PDF namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet

    VJ0805Y105KXA

    Abstract: nichicon UPF ac Inverter schematics 10 kw Si9121 Si9121DY AC digital voltmeter and ammeter
    Text: Si9121DB Vishay Siliconix Si9121 Demonstration Board FEATURES D D D D D D D D D D D D D –10-V to –60-V Input Voltage Range Fixed +5-V or +3.3-V Output Output load up to 400 mA Current Mode Control On-Chip 70-V, 1.5-W N-Channel MOSFET Switch High Efficiency Operation


    Original     		PDF Si9121DB Si9121 95-kHz Si9121DY VJ0805Y105KXAAT 594D227X0010D2T 10MQ100N IDC5020 IDC5020-68uH VJ0805Y105KXA nichicon UPF ac Inverter schematics 10 kw AC digital voltmeter and ammeter

    ac Inverter schematics 10 kw

    Abstract: ac Inverter schematics 5 kw Si9121 Si9121DY
    Text: Si9121DB Vishay Siliconix Si9121 Demonstration Board FEATURES D D D D D D D D D D D D D –10-V to –60-V Input Voltage Range Fixed +5-V or +3.3-V Output Output load up to 400 mA Current Mode Control On-Chip 70-V, 1.5-W N-Channel MOSFET Switch High Efficiency Operation


    Original     		PDF Si9121DB Si9121 95-kHz Si9121DY 18-Jul-08 ac Inverter schematics 10 kw ac Inverter schematics 5 kw

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    Untitled

    Abstract: No abstract text available
    Text: Si9121 New Product Vishay Siliconix High-Voltage, Non-Isolated Buck/Boost Converter for ISDN Digital Phones FEATURES D D D D D D Fixed +5-V or +3.3-V Output D Integrated Floating Feedback Amplifier D On-Chip 70-V, 1.5-W N-Channel MOSFET Switch D Integrated High Voltage Start-Up Circuit,


    Original     		PDF Si9121 95-kHz Si9121 10MQ100N Si9121DY-5 Si9121DY-3 S-62195--Rev. 10-Jan-00

    SBR20A120CTFP

    Abstract: SBR30A50CT SBR3U40P1 dfn1006 SBR1045CT IEC61215 ITO220AB DFN1006-2 DFN1006H4-2 SBR0220T5
    Text: DIO 2040 SBR brochure Final Artwork 25/2/10 10:45 Page 1 SBR THE NEXT GENERATION OF RECTIFIERS. www.diodes.com DIO 2040 SBR brochure (Final Artwork) 25/2/10 10:45 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS


    Original     		PDF A1103-04, SBR20A120CTFP SBR30A50CT SBR3U40P1 dfn1006 SBR1045CT IEC61215 ITO220AB DFN1006-2 DFN1006H4-2 SBR0220T5

    flyback samsung

    Abstract: flyback 1000w SMPS 1000W smps design 1000w
    Text: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the m id-70’s, these devices have emerged as widely ac­ cepted components in mediunv-to-high frequency power control applications. Advances in Doubted Diffused MOS DMOS


    OCR Scan     		PDF id-70 flyback samsung flyback 1000w SMPS 1000W smps design 1000w