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    marking YJ transistors

    Abstract: IEC134 PTB42001X PTB42002X
    Text: 1 - 3 3 - 0 / PTB42001X _ PHILIPS INTERNATIONAL SbE D • J[PTB42 711DflSfc, DD4L444 fill ■ P H I N MICROWAVE POWER TRANSISTORS N PN silicon transistors for use in common-base class-B power amplifiers up to 4.2 GHz. Diffused emitter ballasting resistors, interdigltated structure, multicell geometry, localized thick oxide


    OCR Scan     		PTB42001X PTB42002X PTB42001X PTB42002X Zq-50 marking YJ transistors IEC134 PDF