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    DD31S Search Results

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    DD31S Price and Stock

    ITT Interconnect Solutions NDD-31SBRTT

    CONN D-TYPE RCPT 31POS R/A SLDR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDD-31SBRTT Bulk 16 1
    • 1 $535.97
    • 10 $456.65
    • 100 $456.65
    • 1000 $456.65
    • 10000 $456.65
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    Mouser Electronics NDD-31SBRTT
    • 1 -
    • 10 $512.87
    • 100 $512.87
    • 1000 $512.87
    • 10000 $512.87
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    ITT Interconnect Solutions NDD-31S0PY18T

    CABLE ASSY D-NANO-D 31P 457.2MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDD-31S0PY18T Bulk 12 1
    • 1 $409.22
    • 10 $409.22
    • 100 $409.22
    • 1000 $409.22
    • 10000 $409.22
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    Mouser Electronics NDD-31S0PY18T
    • 1 -
    • 10 $447.13
    • 100 $447.13
    • 1000 $447.13
    • 10000 $447.13
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    ITT Interconnect Solutions NDD-31SBRTT-A174

    CONN D-TYPE RCPT 31POS R/A SLDR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDD-31SBRTT-A174 Bag 10 1
    • 1 $725.29
    • 10 $635.7
    • 100 $635.7
    • 1000 $635.7
    • 10000 $635.7
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    ITT Interconnect Solutions NDD-31S0PY18T-A174

    CABLE ASSY D-NANO-D 31P 457.2MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDD-31S0PY18T-A174 Bag 4 1
    • 1 $544.95
    • 10 $465.023
    • 100 $465.023
    • 1000 $465.023
    • 10000 $465.023
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    Mouser Electronics NDD-31S0PY18T-A174 8
    • 1 $465.02
    • 10 $465.01
    • 100 $465.01
    • 1000 $465.01
    • 10000 $465.01
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    ITT Interconnect Solutions NDD-31SBRT-T-A174

    D-Sub Micro-D Connectors
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NDD-31SBRT-T-A174 10
    • 1 $636.26
    • 10 $635.48
    • 100 $635.48
    • 1000 $635.48
    • 10000 $635.48
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    DD31S Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DD31S08K Eupec Center-Tapped Silicon Diode Doubler Scan PDF
    DD31S08K-A Eupec Center-Tapped Silicon Double Diodes with Common Anode Scan PDF
    DD31S08K-K Eupec Center-Tapped Silicon Double Diodes with Common Cathode Scan PDF
    DD31S10K Eupec Center-Tapped Silicon Diode Doubler Scan PDF
    DD31S10K-A Eupec Center-Tapped Silicon Double Diodes with Common Anode Scan PDF
    DD31S10K-K Eupec Center-Tapped Silicon Double Diodes with Common Cathode Scan PDF
    DD31S12K Eupec Center-Tapped Silicon Diode Doubler Scan PDF
    DD31S12K-A Eupec Center-Tapped Silicon Double Diodes with Common Anode Scan PDF
    DD31S12K-K Eupec Center-Tapped Silicon Double Diodes with Common Cathode Scan PDF
    DD31S14K Eupec Center-Tapped Silicon Diode Doubler Scan PDF
    DD31S14K-A Eupec Center-Tapped Silicon Double Diodes with Common Anode Scan PDF
    DD31S14K-K Eupec Center-Tapped Silicon Double Diodes with Common Cathode Scan PDF

    DD31S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    varo r634

    Abstract: SSIE1440 varo diode ssie1240 Varo r624 siemens ssie1440 R622 VARO SSIE1140 R628 SSIE1230
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer V VF IR IF Max RRM •FSM Max A 00 (A) 00 @ Test 25 °C @ (A) (A) IR VR Test M T2 @ Test (A) c r> Toper Package Style Max (°C) G n ral-Purp se, lo >= 25 A (Cont'd) . . . . 5 -10 .


    Original
    PDF FB3504 RA354 35SP04 DD716 ST4-40 NCR35-400 1N4526 1N1188 D4055W TRA1130 varo r634 SSIE1440 varo diode ssie1240 Varo r624 siemens ssie1440 R622 VARO SSIE1140 R628 SSIE1230

    BTAJ6

    Abstract: si268 ha5105
    Text: 30E » H 7^5^ 237 DD31S4Ô 1 • ^ Z S ~ \S V 7 S G S -T H O M S O N k7 # M œ m iO T T IH M D ! S G S-THOMSON B TA 16 B W SNUBBERLESS TRIACS ■ Itrms = 16 A at Tc = 80 °C. ■ Vdrm : 200 V to 800 V. ■ ■ ■ ■ Iq t = 50 mA Ql-ll-lll . GLASS PASSIVATED CHIP.


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    PDF DD31S40 E81734) CB-415) BTAJ6 si268 ha5105

    transistor t4B

    Abstract: BFP91A tag 8726 BFQ23C Tag c0 665 800 transistor d 1557 0D31521 1557 transistor SOT173 SOT173 RF transistor
    Text: i Philips Semiconductors 53*131 ^ DD31SE 1 T4b M i APX Product specification PNP 5 GHz wideband transistor . — — DESCRIPTION BFQ23C N AWER PHILIPS/DISCRETE PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT 173 and SOT173X micro-stripline envelopes. It is


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    PDF 0D31521 BFQ23C OT173 OT173X BFP91A. transistor t4B BFP91A tag 8726 BFQ23C Tag c0 665 800 transistor d 1557 1557 transistor SOT173 SOT173 RF transistor

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide GaAs laser diode driver to be used with direct modulated laser


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    PDF LG1625AXF DS99-187HSPL

    800w inverter diagrams

    Abstract: 800w power inverter circuit diagram
    Text: For Immediate Assistance, Contact Your Local Salesperson B U R R - B R O W N 1' E DAC2813 1 DUAL 12-BIT DIGITAL-TO-ANALOG CONVERTER 12-bit port interface FEATURES • INTEGRAL LINEARITY ERROR: ±1/2LSB max • +12V to ±15V SUPPLIES • 28-PIN PLASTIC DIP PACKAGE


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    PDF DAC2813 12-BIT 28-PIN DAC2813 17313t 800w inverter diagrams 800w power inverter circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,


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    PDF HB526C264EN-10IN, HB526C464EN-10IN 576-word 64-bit ADE-203-737A HB526C264EN, HB526C464EN HB526C264EN

    Untitled

    Abstract: No abstract text available
    Text: KM29N16000ERS ELECTRONICS Fl ash 2 M x 8 B i t NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit


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    PDF KM29N16000ERS -TSOP2-400F -TSQP2-400R b4142

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^53^31 0031521 m b B i APX Product specification PNP 5 GHz wideband transistor . — — — BFQ23C i N A-flER PHILIPS/DISCRETE DESCRIPTION b'lE T> PINNING PNP transistor in hermetically-sealed, sub-miniature, SOT173 and SOT173X micro-stripline envelopes. It is


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    PDF BFQ23C OT173 OT173X prop56

    philips bfq23

    Abstract: BFQ23 BFR91A the pin function of ic 7423 BFR91A transistor transistor 9634
    Text: Philips Sem iconductors ^ 5 3 ^ 3 1 0 D 3 1 5 13 T7T H A P X Product specification PNP 5 GHz wideband transistor BFQ23 N AMER PHILIPS/DISCRETE DESCRIPTION PINNING PNP transistor in a plastic SOT37 envelope, primarily intended for use in UHF and microwave amplifiers,


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    PDF BFQ23 BFR91A. philips bfq23 BFQ23 BFR91A the pin function of ic 7423 BFR91A transistor transistor 9634

    UAA 146

    Abstract: K3296 UAA 170 a7356 404344 K1962 A1837-2 M3204 A1439-2 LM 327 CN
    Text: '0 CYPRESS CY7C0430V P R E L IM IN A R Y 3.3V 64K x 18 Synchronous QuadPort Static RAM Features • Counter wrap-around control • True four-ported memory cells which allow simulta­ neous access of the same memory location • Synchronous Pipelined device


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    PDF CY7C0430V 133-MHz 25-micron 750mA 03155b UAA 146 K3296 UAA 170 a7356 404344 K1962 A1837-2 M3204 A1439-2 LM 327 CN

    lS286

    Abstract: No abstract text available
    Text: 3QE » • 7*^537 QD31Sfc.it T ■ _ ' T ' Z S r j £ Z 7 SG S-TH O M SO N 7 # s HICTliMQûS BTA 26 A ^ S S S - T H O M S O N TRIACS ■ ■ ■ ■ GLASS PASSIVATED CHIP Igt SPECIFIED IN FOUR QUADFiANTS INSULATING VOLTAGE 2500 V rms UL RECOGNIZED (E81734


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    PDF QD31Sfc E81734) lS286

    82C206

    Abstract: No abstract text available
    Text: 47E D SIEMENS • flaasbos 0031S7D 1 « S I E G SIEMENS AKTIE NGE SELLSCHAF -rs a -3 S -5 5 SAB 82C211 CPU/Bus Controller of Siemens PC-AT Chipset Advance Information 117 3.90 47E » ■ Ö 535b05 0031571 SIEMENS AKTIENGESELLSCHAF -•


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    PDF 0031S7D 82C211 535b05 SAB82C211 T-52-33-55 82C206

    Untitled

    Abstract: No abstract text available
    Text: K M 2 9 N 16 0 0 0 R Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass


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    PDF KM29N16000T/R 264-byte 300/js KM29N16000R)

    tam 0340

    Abstract: No abstract text available
    Text: b b 53^31 Philips Semiconductors □ □ 31 S 7 S TEb H A P X Product specification PNP 5 GHz wideband transistor 1 DESCRIPTION « N ArlER BFQ51 p h x l x p s / d i s CRETE b 'lE » PINNING PNP transistor in a plastic SOT37 envelope. It is primarily intended for use in RF


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    PDF BFQ51 BFR90A. tam 0340

    Untitled

    Abstract: No abstract text available
    Text: s í J- FUJITSU SEMICONDUCTOR DATA SHEET iiì^ p il^ g i 'if , m iA S ^ f IL25Í ^ P625/W625/626R/627R/P62' MB89PV620 • DESCRIPTION The MB89620R series has been developed as a general-purpose version of the F2MC*-8L family consisting of proprietary 8-bit, single-chip microcontrollers.


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    PDF P625/W625/626R/627R/P62' MB89PV620 MB89620R 374175L 64-pin MQP-64C-P01) M64004SC-1-3

    IRF 140N 75

    Abstract: bta 3045 0031SQS
    Text: 3D ED H 7 ^ 2 3 7 G G 31500 b• _ _ _ _ _ Q S C S -T H O M S O N E f f lM jH i C T ©0101 SG S -T H 0M S 0N B T A 08 A W SNUBBERLESS TRIACS ■ ■ ■ ■ ■ ■ = 8 A at T o = 90 °C. : 200 V to 800 V. Ig t = 75 mA QI-II-III , GLASS PASSIVATED CHIP.


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    PDF DG31500 CB-415) IRF 140N 75 bta 3045 0031SQS

    DAC4814

    Abstract: No abstract text available
    Text: Or, Call Customer Service at 1-800-548-6132 USA Only BURR - BROW N ? DAC4814 DAC4814 Quad 12-Bit Digital-to-Analog Converter (Serial Interface) FEATURES Q • COMPLETE QUAD DAC — INCLUDES INTERNAL REFERENCES AND OUTPUT AMPLIFIERS CONVERTERS • GUARANTEED SPECIFICATIONS


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    PDF DAC4814 12-Bit 10MHz 600mW 150mW/DAC) DAC4814 12bit 12-bit

    Untitled

    Abstract: No abstract text available
    Text: 30E D 7 ^ 7 # • TTS'ìEa? DDBlSSb 0 ■ 'T - T S A ' ] S G S -T H O M S O N G K iæ L iû ir œ M S B TA 25 A S G S-TH0MS0N TRIACS ■ ■ ■ ■ . GLASS PASSIVATED CHIP FAST-ON CONNEXIONS Igt SPECIFIED IN FOUR QUADFIANTS INSULATING VOLTAGE 2500 V r m s


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    PDF E81734) BTA25

    Untitled

    Abstract: No abstract text available
    Text: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW NS E REF01 1 +10V Precision VOLTAGE REFERENCE FEATURES DESCRIPTION • OUTPUT VOLTAGE: +10V ±0.2% max The REF01 is a high performance, low price, precision pin compatible second source voltage reference. Out­


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    PDF REF01 REF01 ch132 300mV 17313b5

    Untitled

    Abstract: No abstract text available
    Text: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7,1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is


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    PDF HB526C164EN 288-word 64-bit ADE-203-628A 16-Mbit HM5216165TT) 24C02)

    Untitled

    Abstract: No abstract text available
    Text: KM29N16000ER Flash ELECTRONICS 2Mx8Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register


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    PDF KM29N16000ER KM29N16000ET/R 264-byte 500ps

    Untitled

    Abstract: No abstract text available
    Text: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in


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    PDF bbS3T31 BFG91A

    BTA 08

    Abstract: T2515 Q500 08-BW
    Text: 3GE ì> m 7^237 GÜ315DM 3 • _^ P 2 S ~ l S SGS-THOMSON BTA 08 BW S G S-TH0MS0N SNUBBERLESS TRIACS ■ It r m s = 8 A at Te = 90 °C. ■ V drm : 200 V to 800 V. ■ Ig t = 50 mA Ql-ll-lll . ■ GLASS PASSIVATED CHIP. ■ HIGH SURGE CURRENT : It s m = 80 A.


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    PDF 315DM T-25-15 CB-415) BTA 08 T2515 Q500 08-BW

    triacs BTA 15 700

    Abstract: BTA 16 bta 600b 200B 400B 600B 700B 800B rta 600B
    Text: 3DE H Z T> m 7^5^537 003154M M • _ 'T-'ZS~\S 7 S G S - T H O M S O N ^ 7# S G S-THOMSON B T A 16 B TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT dv/dt c > 10 V/^is ■ I g t SPECIFIED IN FOUR QUADRANTS ■ INSULATING VOLTAGE 2 5 0 0 V rms ■ UL RECOGNIZED (E81734)


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    PDF 003154M E81734) DD31SM7 triacs BTA 15 700 BTA 16 bta 600b 200B 400B 600B 700B 800B rta 600B