Untitled
Abstract: No abstract text available
Text: Si4965DY VISH A Y Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL Drain-Source Voltage L IM IT
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Si4965DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: _ Si4882DY VISHAY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY Vd s r D S o n ( ^ ) I d (A ) 0.0105 @ VGS = 10 V ±11 0.0205 @ VGS = 4.5 V ±8 (V ) 30 1 D D 9 | S O -8 D
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Si4882DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Tem ic Si4431DY Semiconductors P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) r DS(on) (£2) 30 Id (A) 0.040 @VGs = -10 V ±5.8 0.070 @ VGs = -4.5 V ±4.5 s s s SO-8 D D D D P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)
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Si4431DY
S-49534â
06-Oct-97
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Si4416DY VISHAY Vishay Siliconix N-Channel 30-V D-S MOSFET New Product PRODUCT SUM M ARY v „s (V) r d s (ON) (q 1 lD (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 30 9° ' D D D D SO-8 6 s N-Channel MOSFET A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )
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Si4416DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Tem ic Si4936DY Semiconductors Dual N-Channel 30-V D-S Rated MOSFET Product Sum m ary V D S (V ) r DS(on) (£2) I d (A ) 0.037 @ V Gs = 10 V ± 5 .8 0.055 @ V Gs = 4.5 V ± 4 .7 30 Di D i Q Q D2 D2 O O 6 Si 6 S2 SO -8 |X IX S2 X XI °i X 1 °i XI d2 G2 | 4
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Si4936DY
S-49532â
02-Feb-98
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Temic Si4953DY Semiconductors Dual P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) 30 r DS(on) (£2) I d (A) 0.053 @ VGs = -10 V ±4.9 0.095 @ VGs = -4.5 V ±3.6 s2 9 Si o SO-8 6 Di 6 Di P-Channel MOSFET 6 6 d2 d2 P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)
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Si4953DY
S-49534â
06-Oct-97
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Si9428DY V1SHAY Siliconix N-Channel 2.5-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.03 @ VGS = 4.5 V ±6 0.04 @ VGS = 2.5 V ±5 .2 20 Di D, O Q SO-8 6 Si N-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED)
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Si9428DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: _ Si4884DY VISHAY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY Vd s V r DS(on) (£2) I d (A ) 0.0105 @ VGS = 10 V ±12 0.0165 @ VGS = 4.5 V ±10 oS 30 D D D D S O -8 A B S O LU TE M A X IM U M RA TIN G S (TA = 2 5 C U N LE S S O TH E R W IS E NO TED)
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Si4884DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Si4927DY V1SHAY Siliconix Dual P-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.028 @ VGS = —10 V ±7 .4 0.045 @ VGS = —4.5 V ±5 .8 -3 0 1 ° ' Si S2 O Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET
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Si4927DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Tem ic Si9434ADY Semiconductors Single P-Channel, 2.5-V G-S Rated MOSFET Product Sum m ary VDS(V) 20 rDS(on) (Q) 0.033 @ VGs = - 4.5 V 0.050 @ VGs = - 2.5 V I d (A) ± 6.9 ± 5.6 sss O O P SO-8 D D D D P-Channel MOSFET Absolute M axim um Ratings (Ta = 25°C Unless Otherwise Noted)
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Si9434ADY
150BMic
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)
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Si9407AEY
S-57253â
24-Feb-98
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage
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Si4967DY
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Untitled
Abstract: No abstract text available
Text: Si4467DY V1SHAY Siliconix P-Channel 1.8-V G-S MOSFET New Product s s s SO-8 D D D D P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) SYMBOL LIMIT Drain-Source Voltage PARAMETER V DS -1 2 Gate-Source Voltage VGS ±8 UNIT V Ta = 25°C
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Si4467DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Si4542DY VISHAY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUM M AR Y VDS (V) N-Channel P-Channel r DS(ON) (&) I d (A) 0.025 @ V GS = 10 V ±6 .9 0.035 @ VGS = 4.5 V ±5 .8 0.032 @ VGS = —10 V ±6.1 0.045 @ V GS = -4 .5 V ±5.1 30 9° '
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Si4542DY
15ision
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: _ Si4500DY VISHAY Vishay Siliconix New Product Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V D S (V ) N-Channel 20 P-Channel -2 0 r D S (o n ) ( ) Id (A ) 0.030 @ VGS = 4.5 V ± 7 .0 0.040 @ VGS = 2.5 V ± 6 .0
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Si4500DY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Temic Si4412DY Semiconductors N-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) 30 r DS(on) (£2) I d (A) 0.028 @ VGs = 10 V ±7.0 0.042 @ VGs = 4.5 V ±5.8 D D D D SO-8 s s s N-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)
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Si4412DY
S-49534â
06-Oct-97
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Si9948AEY VISHAY Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET New Product Product Sum m ary VDS(V) -60 r DS(on) (£2) I d (A) 0.17 @ VGs = -10V ±2.6 0.26 @ VGs = -4.5 V ±2.1 P 0 'N T Si O S2 Q SO-8 si |~ r ~B~I Di Gi [ T ~ 1 Di 6 | D2 S2 [ T G2 I 4
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Si9948AEY
S2SM735
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Tem ic Si4539DY Semiconductors Dual N- and P-Channel 30-V D-S Rated MOSFET Product Sum m ary V D S (V ) N-Channel r DS(on) (£2) I d (A ) 0.037 @ V Gs = 10 V ± 5 .8 0.055 @ V Gs = 4.5 V ± 4 .7 0.053 @ V Gs = - 1 0 V ± 4 .9 0.095 @ V Gs = -4 .5 V ± 3 .6
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Si4539DY
S-49534â
06-Oct-97
DD17flflT
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Untitled
Abstract: No abstract text available
Text: Si4812DY VISHAY Vishay Siliconix N-Ch 30-V D-S MOSFET With Schottky Diode New Product M O S FE T P R O D U C T S U M M A R Y VDS (V) 30 r DS(ON) (& ) I d (A) 0.018 @ V GS = 10 V ±9 .0 0.028 @ VGS = 4.5 V ±7 .3 S C H O TTK Y PRODUCT SUM M ARY VSD (V) VDS (V)
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Si4812DY
S2SM735
DD17flflT
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