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    DD01S Datasheets Context Search

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    FRCT

    Abstract: C54CM SPRU375 TMS320 SC 4340 SP0305 TMS320C54x fir filter applications AC05F
    Text: TMS320C55x DSP Mnemonic Instruction Set Reference Guide Literature Number: SPRU374E April 2001 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest


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    PDF TMS320C55x SPRU374E applicabl449 FRCT C54CM SPRU375 TMS320 SC 4340 SP0305 TMS320C54x fir filter applications AC05F

    EN3155 Cross Reference

    Abstract: SOURIAU 8665 EN3155-003F2222 en3155 m39029 EN3155-014M2018 EN3545E en3155 EN3155-015F2018 8665-133 EN3155-008M2222
    Text: souriau 8665 Series Description Applications • Rectangular connector • Sealed and unsealed versions • Rear removable crimp contacts sizes 22D, 20, 16 and 12 Basic rectangular connector used for air frame interconnection. Standards ASN-E 0390 Characteristics


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    PDF M22520/1-01 M22520/1-02 M22520/1-04 M22520/2-01 M22520/2-09 M22520/2-06 M22520/2-08 EN3155 Cross Reference SOURIAU 8665 EN3155-003F2222 en3155 m39029 EN3155-014M2018 EN3545E en3155 EN3155-015F2018 8665-133 EN3155-008M2222

    t7055 pulse

    Abstract: 270NR P04ZU TSM12 DD01S
    Text: 9709955 UESTCODE WESTCODE 34C S EMI CONDUCT ORS DE I SEMICONDUCTORS c17D‘i ci S S 01516 d DD01Slt. T ^ Ö - f ~« \IIC A L WESTCODE $) SEMICONDUCTORS P U B L IC A T IO N TP042Q IS SU E 1 Ju n e , 1980 Inverter Grade Stud-Base Thyristor Type P 042Q 50 a m p e re s average: up to 800 volts VRRM


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    PDF c17DIiciSS DD01S TP042Q P042Q -TO-65 t7055 pulse 270NR P04ZU TSM12

    T-58-H

    Abstract: No abstract text available
    Text: SO LITRO N D EV IC ES INC b l 8 3 6 8 6 0 2 SOL ITRON D E V I C E S D E ^ fl3t.flfe.D2 DD01SD7 _ INC fl Ó1C | ~ 01507 D- T'' C V & f Z Z N ' T ITYP6 N°- dk'r. a _ /o / GROUP A A ND/OR PERFORMANCE CHARACTERISTICS NO. SYM BOL CCNOITIONS


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    PDF DD01SD7 T-58-H

    Solitron Transistor

    Abstract: No abstract text available
    Text: 83 68 60 2 S O L I T RO N D EV IC E S _ ~bl D 6 1C 01273 INC ENGINEERING D E VICE SPECIFICATION 7 ^ 9 - ^ ’3>-3210110 D | S3tiflbD5 DD01S73 T | 1.0 SECTION I: 1.1 Construction: Transistor (Code: 91SP311of .DEVICE D E S C R I P T I O N , This device is an NPN Diffused Planar Power Transistor


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    PDF 91SP311of DD01S73 C--13 Solitron Transistor

    Untitled

    Abstract: No abstract text available
    Text: UNITED MICROELECTRONICS BGE D ^32SflSa^DD01S4^5 — 1~-5 ^ - 3 3 - r2 I c n U M 8 2 C 2 1 2 Memory Controller1 Page interleaved mode access g an H H B s. Shadow R A M feature fo r BIOS execution Supports 100 ns D R A M s at 1 6 M H z and 80 ns D R A M O S /2 optim ization feature allows fast switching between


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    PDF 32SflSa DD01S4 CAS21 CAS31

    Untitled

    Abstract: No abstract text available
    Text: 5 .0 " S in g le D ig it D is p la y FEATURES •5.0" digit height ■Right hand decimal point ■Choice of four colors/materials OPTO-ELECTRICAL CHARACTERISTICS Ta = 25°C FACE CO LO RS PEAK W AVE LENGTH (nm) P A R T NO. 567 M T N 2 1 5 1 -A G EM ITTED


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    PDF 20iflA DD01SÃ 00006CH

    HDB3 schematic

    Abstract: VL80C75-PC
    Text: V L S I TECHNOLOGY INC Ifl VLSI D e | =1300347 0001S2Q 0 ^ T - l S - i h V i Te c h n o l o g y , in c . VL80C75 T1 INTERFACE FEATURES DESCRIPTION • Supports T1, T1C, and CEPT data rates The VL80C75 is a general purpose PCM Line Interface circuit. It Is designed Ho


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    PDF 0001S2Q VL80C75 VL80C75 HDB3 schematic VL80C75-PC

    DAC with BCD input

    Abstract: DAC with BCD inputs
    Text: datel 47E inc D • 2b515bl 0QD1S73 21 D * ] > T L DAC-HZ Series " P S l - O V \ 712-Bit Hybrid Digital-to-Analog Converters FEATURES • 12-Bit binary • • • • 5 Output ranges 3 Microseconds settling time Internal reference and output amplifier High performance


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    PDF 2b515bl 0QQ1573 12-Bit AM-500 DAC-HZ12BGC DAC-HZ12BMC DAC-HZ12BMM DAC-HZ12DGC DAC with BCD input DAC with BCD inputs

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)


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    PDF HX6256 1x106rad 1x1014cm 1x109 1x101 28-Lead 4551A72

    c2689

    Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
    Text: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n


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    PDF MIL-S-19500/447 2N5926 TX2N5926 0D13flS7 MiL-S-l9500/447 5961-A340 c2689 Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx TX2N5926 transistor AS 431 tx transistor

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC 4 Megabit CMOS FLASH DPZ128X32VA/DPZ128X32VAP M I C R O S Y S T E M S DESCRIPTION: The DPZ128X32VA/VAP is a 4 megabit C M O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH memory devices. The D P Z 128X32VA/VAP can be user


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    PDF DPZ128X32VA/DPZ128X32VAP DPZ128X32VA/VAP 128X32VA/VAP 200ns 120mA 400nA 00VA/VAP Z128X32V 120ns

    Z89COO

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATION Z89C00 1 6 -B it D ig it a l S ig n a l p r o c e s s o r FEATURES • 16-Bit Single Cycle Instructions ■ 16-Bit I/O Port ■ Zero Overhead Hardware Looping ■ 4K Words of On-Chip Masked ROM ■ 16-Bit Data ■ Three Vectored Interrupts


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    PDF Z89C00 16-Bit 24-Bit Z89C00 16-bit, 68-pin Z89C001OVSC Z89COO

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE LED LAMPS INTEGRATED RESISTOR 5 VOLTS 12 VOLTS T-1 3mm RED AMBER GREEN SERIES 4 3 0 2 F -5 V , 4 3 0 2 F -1 2 V FEATURES OUTLINE DIMENSIONS • High brightness output • Integral current limiting resistor • TTL compatible requires no external current limiter with


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    PDF 4302F1-5V 4302F3-5V 4302F5-5V 4302F1-12V 4302F3-12V 4302F5-12V

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y O D APT5040BNR APT5050BNR O S POWER MOS IVs SOOV 16.0A 0.40U 500V 14.0A 0.5012 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATING S Symbol ^DSS All Ratings: T c = 25°C unless otherwise specified.


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    PDF APT5040BNR APT5050BNR MIL-STD-750 O-247AD DD01SGS

    pa41

    Abstract: No abstract text available
    Text: APEX rilCROTECHNOLOGY CORP h?E » • ÜÔ7ûb3b DOD1SHÔ TIT ■ AfIT PA41/42 PA41A/PA42A APEX MICROTECHNOLOGY CORPORATION • APPLICATIONS HOTLINE 3 0 0 546-A PEX 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • • • MONOLITHIC MOS TECHNOLOGY


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    PDF PA41/42 PA41A/PA42A 546-APEX PA41DIE PA41/42 125ji) PA41DIEU pa41

    diode U3d

    Abstract: LM 7801 6030BNR diode U3d on DLS FT 031 APT6030BNR APT6033BNR 040 U3D u3d diode
    Text: O D O S ADVANCED PO W ER Te c h n o l o g y APT6030BNR APT6033BNR POWER MOS IVe 600V 23.0A 0.30Í2 600V 22.0A 0.33Í2 AVALANCHE RATED N-C HA N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol All Ratings: T c = 2 5 °C unless otherwise specified.


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    PDF APT6030BNR APT6033BNR O-247AD diode U3d LM 7801 6030BNR diode U3d on DLS FT 031 040 U3D u3d diode

    Untitled

    Abstract: No abstract text available
    Text: ICS1884 Integrated Circuit Systems, Inc. Advance Information SO NET/A TM Teleclock R e c o v e ry /G e n e ra to r Unit General Description Features The ICS1884 Teleclock is designed to provide high perform­ ance clock recovery and generation for either 51.84 Mbit/s


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    PDF ICS1884 ICS1884 TRNWT-000253 ICS1884M 470pF 150pF

    26C1000

    Abstract: MX25C capacitor 330 1c6
    Text: ¡ m i e MX26C1OOO 1 M-OFT [1 SSK X B CM OS MUL.T3PLJE-T1ME-I3ROGRAIV/IMABLE ROM FEA TU RES • • • • • • • • Standby current: 100hA 100 minimum erase/program cycles Package type: - 32 pin PDIP - 32 pin SO P - 32 pin PLCC - 32 pin TSOPii 128K x 8 organization


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    PDF MX26C1OOO 100hA 70/90/100/120/i MX26C1000 32-PIN QQ01504 26C1000 MX25C capacitor 330 1c6

    nand gate layout

    Abstract: darlington buffer array B2000 High speed output buffer IC 5V 502-016
    Text: MB 17K Low Power Schottky TTL c c_ The Fujitsu B-2000 IV1B17K series is an integrated circuit gate array fabricated with a low power Schottky T T L (Transistor-Transistor Logic) process. The array consists of 2108 internal 3-input NAND gates and 112 input/output buffers.


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    PDF B-2000 IV1B17K J22833 CA95051, D-6000 V2042-819C nand gate layout darlington buffer array B2000 High speed output buffer IC 5V 502-016

    EQUIVALENT OF SR240

    Abstract: XL-8137 weitek Weitek 3364 weitek 3164 Weitek xl-8136 wtl3364 CXNL 0x78F y2274
    Text: tilEIT EK CORP Tbb3ö2b O O O lS lö 11E D □ 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS T - W - H - o S November 1989 1. Features 64-BIT FLO A T IN G -PO IN T D A T A PA T H F U L L FU N C T IO N 64-bit and 32-bit floating-point and 32-bit integer multiplier


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    PDF 64-BIT 32-bit EQUIVALENT OF SR240 XL-8137 weitek Weitek 3364 weitek 3164 Weitek xl-8136 wtl3364 CXNL 0x78F y2274

    M28750/10

    Abstract: M28750/10-002W MIL STD 704 Nytronics Nytronics hi-g J-13 JPS10-1W JPS10-1Y Nytronics hi-g inc
    Text: - J-10— • b?21bMS 0001500 75 ■ HI-G SOLID STATE RELAY MIL-R-28750/9 250 VAC 40-440 Hz , 1A (2A WITH HEAT SINK) JDS9-1 ELECTRONIC PRODUCTS*? NYTR0NICS INC/ HI-G CO SIE 3> FEATURES: • • • • 1500 V rms o p tica l iso la tio n


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    PDF -J-10- 21bMS MIL-R-28750/9 JPS10-1 JPS10-1W JPS10-1Y JPS10-2W JPS10-2Y M28750/10-00/1W M28750/10-001Y M28750/10 M28750/10-002W MIL STD 704 Nytronics Nytronics hi-g J-13 Nytronics hi-g inc

    nino relay

    Abstract: RELAY RR 24V ac 12V dc TRANSISTOR ztx 105 3a circuit diagram tranzorb diode zener diode zg TRANSISTOR ztx 105 3a TIP 422 transistor RCA Solid State amplifier RSN 310 R 36 RU-20
    Text: ERICSSON COMPONENTS INC ERICSSON $ IbE D • 3373bfl0 00014=12 1 ■ September 1989 T - 7 S - H - n PBL 3762 Subscriber Line Interface Circuit Description Key Features


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    PDF 3373bfi0 T-76-II-/7 3762N' PBL3762J 3762/2J 3762QN* 3762QC 3762/2QC 3762CC S-164 nino relay RELAY RR 24V ac 12V dc TRANSISTOR ztx 105 3a circuit diagram tranzorb diode zener diode zg TRANSISTOR ztx 105 3a TIP 422 transistor RCA Solid State amplifier RSN 310 R 36 RU-20

    JPS10-1W

    Abstract: pfl 200 MIL-R-28750 J-13 relay hi-g inc
    Text: - J-10— • b?21bMS 0001500 75 ■ HI-G SOLID STATE RELAY MIL-R-28750/9 250 VAC 40-440 Hz , 1A (2A WITH HEAT SINK) JDS9-1 ELECTRONIC PRODUCTS*? NYTR0NICS INC/ HI-G CO SIE 3> FEATURES: • • • • 1500 V rms o p tica l iso la tio n


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    PDF -J-10- 21bMS MIL-R-28750/9 Tr220 JPS10-1 JPS10-1W JPS10-1Y JPS10-2W JPS10-2Y M28750/10-00/1W pfl 200 MIL-R-28750 J-13 relay hi-g inc