FRCT
Abstract: C54CM SPRU375 TMS320 SC 4340 SP0305 TMS320C54x fir filter applications AC05F
Text: TMS320C55x DSP Mnemonic Instruction Set Reference Guide Literature Number: SPRU374E April 2001 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest
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TMS320C55x
SPRU374E
applicabl449
FRCT
C54CM
SPRU375
TMS320
SC 4340
SP0305
TMS320C54x fir filter applications
AC05F
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EN3155 Cross Reference
Abstract: SOURIAU 8665 EN3155-003F2222 en3155 m39029 EN3155-014M2018 EN3545E en3155 EN3155-015F2018 8665-133 EN3155-008M2222
Text: souriau 8665 Series Description Applications • Rectangular connector • Sealed and unsealed versions • Rear removable crimp contacts sizes 22D, 20, 16 and 12 Basic rectangular connector used for air frame interconnection. Standards ASN-E 0390 Characteristics
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M22520/1-01
M22520/1-02
M22520/1-04
M22520/2-01
M22520/2-09
M22520/2-06
M22520/2-08
EN3155 Cross Reference
SOURIAU 8665
EN3155-003F2222
en3155 m39029
EN3155-014M2018
EN3545E
en3155
EN3155-015F2018
8665-133
EN3155-008M2222
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t7055 pulse
Abstract: 270NR P04ZU TSM12 DD01S
Text: 9709955 UESTCODE WESTCODE 34C S EMI CONDUCT ORS DE I SEMICONDUCTORS c17D‘i ci S S 01516 d DD01Slt. T ^ Ö - f ~« \IIC A L WESTCODE $) SEMICONDUCTORS P U B L IC A T IO N TP042Q IS SU E 1 Ju n e , 1980 Inverter Grade Stud-Base Thyristor Type P 042Q 50 a m p e re s average: up to 800 volts VRRM
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c17DIiciSS
DD01S
TP042Q
P042Q
-TO-65
t7055 pulse
270NR
P04ZU
TSM12
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T-58-H
Abstract: No abstract text available
Text: SO LITRO N D EV IC ES INC b l 8 3 6 8 6 0 2 SOL ITRON D E V I C E S D E ^ fl3t.flfe.D2 DD01SD7 _ INC fl Ó1C | ~ 01507 D- T'' C V & f Z Z N ' T ITYP6 N°- dk'r. a _ /o / GROUP A A ND/OR PERFORMANCE CHARACTERISTICS NO. SYM BOL CCNOITIONS
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DD01SD7
T-58-H
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Solitron Transistor
Abstract: No abstract text available
Text: 83 68 60 2 S O L I T RO N D EV IC E S _ ~bl D 6 1C 01273 INC ENGINEERING D E VICE SPECIFICATION 7 ^ 9 - ^ ’3>-3210110 D | S3tiflbD5 DD01S73 T | 1.0 SECTION I: 1.1 Construction: Transistor (Code: 91SP311of .DEVICE D E S C R I P T I O N , This device is an NPN Diffused Planar Power Transistor
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91SP311of
DD01S73
C--13
Solitron Transistor
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Untitled
Abstract: No abstract text available
Text: UNITED MICROELECTRONICS BGE D ^32SflSa^DD01S4^5 — 1~-5 ^ - 3 3 - r2 I c n U M 8 2 C 2 1 2 Memory Controller1 Page interleaved mode access g an H H B s. Shadow R A M feature fo r BIOS execution Supports 100 ns D R A M s at 1 6 M H z and 80 ns D R A M O S /2 optim ization feature allows fast switching between
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32SflSa
DD01S4
CAS21
CAS31
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Untitled
Abstract: No abstract text available
Text: 5 .0 " S in g le D ig it D is p la y FEATURES •5.0" digit height ■Right hand decimal point ■Choice of four colors/materials OPTO-ELECTRICAL CHARACTERISTICS Ta = 25°C FACE CO LO RS PEAK W AVE LENGTH (nm) P A R T NO. 567 M T N 2 1 5 1 -A G EM ITTED
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20iflA
DD01SÃ
00006CH
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HDB3 schematic
Abstract: VL80C75-PC
Text: V L S I TECHNOLOGY INC Ifl VLSI D e | =1300347 0001S2Q 0 ^ T - l S - i h V i Te c h n o l o g y , in c . VL80C75 T1 INTERFACE FEATURES DESCRIPTION • Supports T1, T1C, and CEPT data rates The VL80C75 is a general purpose PCM Line Interface circuit. It Is designed Ho
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0001S2Q
VL80C75
VL80C75
HDB3 schematic
VL80C75-PC
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DAC with BCD input
Abstract: DAC with BCD inputs
Text: datel 47E inc D • 2b515bl 0QD1S73 21 D * ] > T L DAC-HZ Series " P S l - O V \ 712-Bit Hybrid Digital-to-Analog Converters FEATURES • 12-Bit binary • • • • 5 Output ranges 3 Microseconds settling time Internal reference and output amplifier High performance
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2b515bl
0QQ1573
12-Bit
AM-500
DAC-HZ12BGC
DAC-HZ12BMC
DAC-HZ12BMM
DAC-HZ12DGC
DAC with BCD input
DAC with BCD inputs
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (Leff= 0.6 )im) • Read/Write Cycle Times < 17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106rad(Si02)
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HX6256
1x106rad
1x1014cm
1x109
1x101
28-Lead
4551A72
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c2689
Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
Text: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n
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MIL-S-19500/447
2N5926
TX2N5926
0D13flS7
MiL-S-l9500/447
5961-A340
c2689
Z027
diode cc 3053
diode Z027
cc 3053
npn marking tx
TX2N5926
transistor AS 431
tx transistor
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 4 Megabit CMOS FLASH DPZ128X32VA/DPZ128X32VAP M I C R O S Y S T E M S DESCRIPTION: The DPZ128X32VA/VAP is a 4 megabit C M O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with four 128K x 8 FLASH memory devices. The D P Z 128X32VA/VAP can be user
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DPZ128X32VA/DPZ128X32VAP
DPZ128X32VA/VAP
128X32VA/VAP
200ns
120mA
400nA
00VA/VAP
Z128X32V
120ns
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Z89COO
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATION Z89C00 1 6 -B it D ig it a l S ig n a l p r o c e s s o r FEATURES • 16-Bit Single Cycle Instructions ■ 16-Bit I/O Port ■ Zero Overhead Hardware Looping ■ 4K Words of On-Chip Masked ROM ■ 16-Bit Data ■ Three Vectored Interrupts
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Z89C00
16-Bit
24-Bit
Z89C00
16-bit,
68-pin
Z89C001OVSC
Z89COO
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Untitled
Abstract: No abstract text available
Text: SOLID STATE LED LAMPS INTEGRATED RESISTOR 5 VOLTS 12 VOLTS T-1 3mm RED AMBER GREEN SERIES 4 3 0 2 F -5 V , 4 3 0 2 F -1 2 V FEATURES OUTLINE DIMENSIONS • High brightness output • Integral current limiting resistor • TTL compatible requires no external current limiter with
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4302F1-5V
4302F3-5V
4302F5-5V
4302F1-12V
4302F3-12V
4302F5-12V
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Untitled
Abstract: No abstract text available
Text: ADVANCED POW ER Te c h n o l o g y O D APT5040BNR APT5050BNR O S POWER MOS IVs SOOV 16.0A 0.40U 500V 14.0A 0.5012 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATING S Symbol ^DSS All Ratings: T c = 25°C unless otherwise specified.
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APT5040BNR
APT5050BNR
MIL-STD-750
O-247AD
DD01SGS
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pa41
Abstract: No abstract text available
Text: APEX rilCROTECHNOLOGY CORP h?E » • ÜÔ7ûb3b DOD1SHÔ TIT ■ AfIT PA41/42 • PA41A/PA42A APEX MICROTECHNOLOGY CORPORATION • APPLICATIONS HOTLINE 3 0 0 546-A PEX 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • • • MONOLITHIC MOS TECHNOLOGY
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PA41/42
PA41A/PA42A
546-APEX
PA41DIE
PA41/42
125ji)
PA41DIEU
pa41
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diode U3d
Abstract: LM 7801 6030BNR diode U3d on DLS FT 031 APT6030BNR APT6033BNR 040 U3D u3d diode
Text: O D O S ADVANCED PO W ER Te c h n o l o g y APT6030BNR APT6033BNR POWER MOS IVe 600V 23.0A 0.30Í2 600V 22.0A 0.33Í2 AVALANCHE RATED N-C HA N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS S ym bol All Ratings: T c = 2 5 °C unless otherwise specified.
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APT6030BNR
APT6033BNR
O-247AD
diode U3d
LM 7801
6030BNR
diode U3d on
DLS FT 031
040 U3D
u3d diode
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Untitled
Abstract: No abstract text available
Text: ICS1884 Integrated Circuit Systems, Inc. Advance Information SO NET/A TM Teleclock R e c o v e ry /G e n e ra to r Unit General Description Features The ICS1884 Teleclock is designed to provide high perform ance clock recovery and generation for either 51.84 Mbit/s
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ICS1884
ICS1884
TRNWT-000253
ICS1884M
470pF
150pF
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26C1000
Abstract: MX25C capacitor 330 1c6
Text: ¡ m i e MX26C1OOO 1 M-OFT [1 SSK X B CM OS MUL.T3PLJE-T1ME-I3ROGRAIV/IMABLE ROM FEA TU RES • • • • • • • • Standby current: 100hA 100 minimum erase/program cycles Package type: - 32 pin PDIP - 32 pin SO P - 32 pin PLCC - 32 pin TSOPii 128K x 8 organization
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MX26C1OOO
100hA
70/90/100/120/i
MX26C1000
32-PIN
QQ01504
26C1000
MX25C
capacitor 330 1c6
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nand gate layout
Abstract: darlington buffer array B2000 High speed output buffer IC 5V 502-016
Text: MB 17K Low Power Schottky TTL c c_ The Fujitsu B-2000 IV1B17K series is an integrated circuit gate array fabricated with a low power Schottky T T L (Transistor-Transistor Logic) process. The array consists of 2108 internal 3-input NAND gates and 112 input/output buffers.
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B-2000
IV1B17K
J22833
CA95051,
D-6000
V2042-819C
nand gate layout
darlington buffer array
B2000
High speed output buffer IC 5V
502-016
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EQUIVALENT OF SR240
Abstract: XL-8137 weitek Weitek 3364 weitek 3164 Weitek xl-8136 wtl3364 CXNL 0x78F y2274
Text: tilEIT EK CORP Tbb3ö2b O O O lS lö 11E D □ 3164/3364 64-BIT FLOATING-POINT DATA PATH UNITS T - W - H - o S November 1989 1. Features 64-BIT FLO A T IN G -PO IN T D A T A PA T H F U L L FU N C T IO N 64-bit and 32-bit floating-point and 32-bit integer multiplier
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64-BIT
32-bit
EQUIVALENT OF SR240
XL-8137
weitek
Weitek 3364
weitek 3164
Weitek xl-8136
wtl3364
CXNL
0x78F
y2274
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M28750/10
Abstract: M28750/10-002W MIL STD 704 Nytronics Nytronics hi-g J-13 JPS10-1W JPS10-1Y Nytronics hi-g inc
Text: - J-10— • b?21bMS 0001500 75 ■ HI-G SOLID STATE RELAY MIL-R-28750/9 250 VAC 40-440 Hz , 1A (2A WITH HEAT SINK) JDS9-1 ELECTRONIC PRODUCTS*? NYTR0NICS INC/ HI-G CO SIE 3> FEATURES: • • • • 1500 V rms o p tica l iso la tio n
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-J-10-
21bMS
MIL-R-28750/9
JPS10-1
JPS10-1W
JPS10-1Y
JPS10-2W
JPS10-2Y
M28750/10-00/1W
M28750/10-001Y
M28750/10
M28750/10-002W
MIL STD 704
Nytronics
Nytronics hi-g
J-13
Nytronics hi-g inc
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nino relay
Abstract: RELAY RR 24V ac 12V dc TRANSISTOR ztx 105 3a circuit diagram tranzorb diode zener diode zg TRANSISTOR ztx 105 3a TIP 422 transistor RCA Solid State amplifier RSN 310 R 36 RU-20
Text: ERICSSON COMPONENTS INC ERICSSON $ IbE D • 3373bfl0 00014=12 1 ■ September 1989 T - 7 S - H - n PBL 3762 Subscriber Line Interface Circuit Description Key Features
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3373bfi0
T-76-II-/7
3762N'
PBL3762J
3762/2J
3762QN*
3762QC
3762/2QC
3762CC
S-164
nino relay
RELAY RR 24V ac 12V dc
TRANSISTOR ztx 105 3a circuit diagram
tranzorb diode
zener diode zg
TRANSISTOR ztx 105 3a
TIP 422 transistor
RCA Solid State amplifier
RSN 310 R 36
RU-20
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JPS10-1W
Abstract: pfl 200 MIL-R-28750 J-13 relay hi-g inc
Text: - J-10— • b?21bMS 0001500 75 ■ HI-G SOLID STATE RELAY MIL-R-28750/9 250 VAC 40-440 Hz , 1A (2A WITH HEAT SINK) JDS9-1 ELECTRONIC PRODUCTS*? NYTR0NICS INC/ HI-G CO SIE 3> FEATURES: • • • • 1500 V rms o p tica l iso la tio n
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-J-10-
21bMS
MIL-R-28750/9
Tr220
JPS10-1
JPS10-1W
JPS10-1Y
JPS10-2W
JPS10-2Y
M28750/10-00/1W
pfl 200
MIL-R-28750
J-13
relay hi-g inc
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